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利用STM和LEED分析了Ge在Si3N4/Si(111)和Si3N4/Si(100)表面生长过程的结构演变,在生长早期,Ge在两种衬底表面上都形成高密度的三维纳米团簇,这些团簇的大小均在几个纳米范围内,并在高温退火时积增大,当生长继续围内形成以(111)方向为主的晶面,相反,在非晶的Si3N4表面,Ge的(111)晶向的小面生长比其他方向优先,最后在大范围内形成以(111)方向为主的晶面,相反,在非晶的Si3N4表面,即Si3N4/Si(100),Ge晶体的高指数侧面生长较顶面快,最终形成金字塔形的岛结构,对这样的表面生长过程进行了探讨给出合理的物理解释。 相似文献
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硅、锗材料在Si(100)表面的生长研究 总被引:2,自引:0,他引:2
利用扫描隧道显微镜和超高真空实验装置系统进行了Si(100)表面生长Si,Ge的实验研究。分析了所生成表面的形貌、结构等物理性质。研究表明:Si在Si(100)表面的同质生长可以形成纳米结构薄膜。Ge在Si(100)表面生长形成规则的三维小岛,而在Si/Ge/Si(100)多层膜上生长则形成大小二种三维岛,研究表明大岛具有Ge/Si/Ge的壳层结构。 相似文献
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用乙硅烷及固态锗源外延生长应变GeSi/Si合金 总被引:2,自引:0,他引:2
采用气态源分子束外延(GSMBE)法成功地生长出应变GexSi1-x/Si异质结合金,所使用的源分别是乙硅烷和固态锗。用固态锗取代气态锗烷,即保留了生长中由氢化物裂解产生的氢原子在生长表面上的活化作用(surfactant effect),又利用了固态源炉通过挡板能够迅速切断分子束流的优点。样品的X射线双晶衍射,透射电子显微镜及光荧光测量表明GexSi1-x合金具有较好的晶格完整性及平坦的异质结界 相似文献
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用真高真空化学气相沉积方法,在Si(100)衬底上生长掺C高达2.2%的Si1-x-yGexCy合金薄膜,外延层质量良好。用高分辨透射电子显微镜,X射线衍射,傅立叶红外吸收光谱以及拉曼光谱对外层进行了检测,结果表明:替代位C的加入,9明显缓解了宏观上的应变,但在合金中仍存在着微观应变。 相似文献
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利用STM和LEED分析了Ge在Si3 N4 /Si(111)和Si3 N4 /Si(10 0 )表面生长过程的结构演变。在生长早期 ,Ge在两种衬底表面上都形成高密度的三维纳米团簇 ,这些团簇的大小均在几个纳米范围内 ,并在高温退火时体积增大。当生长继续时 ,Ge的晶体小面开始显现。在晶态的Si3 N4 (0 0 0 1) /Si(111)表面 ,Ge的 (111)晶向的小面生长比其他方向优先。最后在大范围内形成以 (111)方向为主的晶面。相反 ,在非晶的Si3 N4 表面 ,即Si3 N4 /Si(10 0 ) ,Ge晶体的高指数侧面生长较顶面快 ,最终形成金字塔形的岛结构。对这样的表面生长过程进行了探讨并给出了合理的物理解释 相似文献
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采用Raman光谱对高Ge含量的锗硅合金中的应变驰豫进行研究,运用Mooney的两种方法对合金中Ge成分及应力进行了分析,并用HRXRD对其分析结果进行了验证.最后分析了热应变对Si1-xGex外延的影响. 相似文献
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报道了Si基Si1-x-yGexCy合金生长中C对Ge组分和生长速率的抑制作用,提出一个Si,Ge、C原子的排列构型,从理论上给出了C对Ge组分的抑制度和Ge/C原子比的关系,并指出在富Ge情况下C对Ge的抑制作用会趋向于饱和。 相似文献
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本文基于形变势理论构建(001)面双轴应变Ge材料的能带结构模型。计算结果表明(001)面双轴应变可以将Ge的能带从以L能谷为导带底的间接带半导体调控到以Δ4能谷为导带底的间接带半导体或者以Г能谷为导带底的直接带半导体。同时室温下Ge的带隙与应变的关系可用四段函数来表示:当压应变将Ge材料调控为以Г能谷为导带底的间接带半导体后,每增加1%的压应变,禁带宽度将线性减小约78.63meV;当张应变将Ge材料调控为直接带半导体后,张应变每增加1%,禁带宽度将线性减小约177.98meV;应变介于-2.06%和1.77%时,Ge将被调控为以L能谷为导带底的间接带半导体,禁带宽度随着压应变每增加1%而增加11.66meV,随着张应变每增加1%而线性减小约88.29meV。该量化结果可为研究和设计双轴应变Ge材料及其器件提供理论指导和实验依据。 相似文献
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《Thin solid films》2006,515(2):752-755
We present a study of Ge islands formation on Si(100) substrates using grazing-incidence small-angle X-ray scattering (GISAXS) and atomic force microscopy (AFM). Samples were prepared by magnetron sputtering of a 5 nm thick Ge layer in a very high vacuum on Si(100) substrate held at different temperatures. The vertical cut (perpendicular to the surface) of the experimental 2D GISAXS pattern has been fitted using a Guinier approximation. The optimum temperature for the islands formation was 650 °C. At this temperature, islands grow in conical shape with very similar dimensions; however, inter-island distances varied significantly. 相似文献
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利用扫描隧道显微镜和超高真空实验装置系统进行了Si(10 0 )表面生长Si,Ge的实验研究。分析了所生成表面的形貌、结构等物理性质。研究表明 :Si在Si(10 0 )表面的同质生长可以形成纳米结构薄膜。Ge在Si(10 0 )表面生长形成规则的三维小岛。而在Si/Ge/Si(10 0 )多层膜上生长则形成大小二种三维岛。研究表明大岛具有Ge/Si/Ge的壳层结构 相似文献
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The adsorption energetics of Ge dimers on the (1 0 0) surfaces of Ge and Si has been investigated using the first-principles molecular dynamics method. Four high-symmetry configurations have been considered and fully relaxed. The most stable configuration for Ge dimers on Si(1 0 0) is found to be in the trough between two surface dimer rows, oriented parallel to the substrate Si dimers. These results are consistent with recent experimental studies of the system using the scanning tunneling microscopy (STM), and help to clarify some existing controversies on the interpretation of the STM images. In contrast, for Ge dimers on Ge(1 0 0), the most stable configuration is on top of the substrate dimer row. 相似文献
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K. G. Barbakadze T. S. Vekua S. P. Krivoruchko E. P. Sabo R. R. Shvangiradze 《Inorganic Materials》2003,39(12):1227-1232
The electrical resistance of the contact between tungsten and silicon–germanium alloys of different compositions was measured as a function of temperature. The results indicate that the room-temperature contact resistance increases with increasing Ge content, annealing temperature, and annealing time. With increasing measuring temperature, the contact resistance drops to a level of the experimental error. Annealing at 1070 K tends to break down both W/p-Si–Ge and W/n-Si–Ge contacts. 相似文献
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The quest for higher performance of scaled down technologies resulted in the use of high-mobility substrates and strain engineering approaches. The development of advanced processing modules, based on low temperature processing and deposited (MBE, ALD, epitaxially grown, etc.) gate stacks, has triggered the interest of exploring Ge for sub 32 nm technology nodes. A comparison between Si and Ge for future microelectronics has to take into account a variety of materials, processing and performance aspects. Here special attention will be given to passivation and gate stack formation in relation to device performance, including leakage current and reliability aspects. The potential of Ge-based device structures and the monolithic integration of Ge and III-V devices on silicon are highlighted. 相似文献
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V.N. Vasilevskaya L.I. Datsenko N.V. Osadchaya I.V. Prokopenko N.N. Soldatenko Yu.A. Tkhorik 《Thin solid films》1974,22(3):221-229
The structural perfection of heteroepitaxial systems (HESs) of the SiGe type (germanium films deposited onto silicon substrates) and of the “reverse” type (Si films on Ge substrates) has been investigated by X-ray diffraction and metallographical methods. It has been found that the real structures of these HESs are very different. The fragmentation previously observed in the SiGe HES is not found in the reverse system, but thick Ge substrates (dGe ~ 1 mm) appear to be plastically deformed throughout their thickness. A mutual correspondence of the damaged areas, inherent in the fragmentary structure (FS) in the SiGe system, is absent in the reverse system. Annealing does not influence the SiGe HES. The nature of the FS and the peculiarities of the deformation of both systems are discussed. 相似文献