基于2007-2013年COSMIC掩星数据的电离层振幅闪烁研究

利用2007-2013年的COSMIC掩星数据，分析了E区与F区电离层闪烁的变化特征.发现用闪烁出现频次、闪烁发生率以及闪烁强度来表征的电离层闪烁出现规律比较相似.E区电离层闪烁在夏季半球的中纬地区最强，其次是春秋季的低纬地区和冬季半球.就经度分布来说，春秋季E区电离层闪烁呈四波结构.对F区电离层闪烁来说:南美-大西洋扇区在12月至点最为显著；非洲和太平洋扇区在6月至点最为显著；大西洋扇区在春秋分季最为显著.极区也出现中等强度的闪烁，尤其在南半球的90°E~180°E扇区较为显著.高纬E区电离层闪烁强度随太阳活动的增强而增强，而低纬和南半球的中纬E区闪烁随太阳活动的增强而减弱.高纬和低纬F区闪烁随太阳活动的增强而增强，而中纬F区电离层闪烁对太阳活动无显著依赖关系.对于赤道区来说，北半球60°W~60°E经度区闪烁强度随太阳活动的变化最为显著，其次是南半球60°E~210°E附近；而对于高纬地区来说，F区闪烁强度随太阳活动的变化最为显著的区域在南半球60°E~210°E附近.     

Fourth quarter 2009 IEEE communications surveys and tutorials

Welcome to the fourth issue of 2009 of the IEEE Communications Surveys and Tutorials. Paper in this issue survey the research effort in several areas such mobility in Wimax, mobility models in VANET, handoff in cellular networks, admission control in MANETS, physical impairments in optical networks, physical layer issues in the 802.11n standard as well as jamming in wireless sensor networks     

Inventive payoff from R&D in Japanese industry: convergencewith the West

An attempt is made to determine if investment in R&D and the hiring of college-educated employees result in a higher rate of inventions. The relationship between the input of R&D and inventive output is studied in two samples of Japanese factories, 34 in 1982 and 44 in 1970. These results are compared with findings in a parallel American study. The correlations between R&D and inventive output are similar in Japan and America in the 1980s, despite some differences in the management of innovation in the two nations. Moreover, the most Westernized subsample of Japanese firms in the 1970s had correlations between R&D and invention similar to those observed in the American study. Thus, it is concluded that some degree of convergence may be taking place in R&D management strategies in the two nations     

Effect of photovoltage on current flow in metal-semiconductor schottky-barrier contacts

It is shown that changes in device characteristics and an increase in the light-to-electrical energy conversion efficiency in metal-semiconductor Schottky barrier contacts are associated with a peripheral electric field built into the contact. For contacts with longer perimeters, variations in device characteristics and the light-to-electrical energy conversion efficiency are significantly larger. Since the photovoltage and peripheral electric fields in the contact region are codirected with the intrinsic electric field of the space-charge region, contact illumination results in a larger increase in the “dead” zone in forward portions of current-voltage characteristics, a larger decrease in the effective Schottky barrier height, and an increase in the field electron emission. An increase in the reverse field emission under photovoltage leads to an increase in the recombination current in the space-charge region, which provides dc photocurrent flow in the circuit.     

开放体系下云母表面纳米气泡的制备与观察

固/液界面纳米气泡的存在已经得到证实,并成为界面科学研究的一个焦点.在原子力显微镜液体池内制备纳米气泡的基础上,本研究建立了在开放体系中进行醇水替换,制备纳米气泡的方法.原子力显微镜观察显示.开放体系中进行醇水替换,也可以在水/云母界面上稳定地生成纳米气泡.将不同环境下制备的纳米气泡进行比较,统计结果显示,在开放体系下制备的纳米气泡密度较低,形态也较小.不同环境下醇水替换产生的纳米气泡数量和形态的差异,为纳米气泡形成的机制提供了新的佐证.开放体系下纳米气泡制备方法的建立拓展了纳米气泡的制备条件,揭示了纳米气泡存在的普遍性,同时也为纳米气泡性质研究提供了新的途径.     

Improved LUT Technique for HPA Nonlinear Pre-Distortion in OFDM Systems

In this paper, we focus on the Look-up Table (LUT) technique for the compensation of HPA nonlinear distortion. An improved LUT method is proposed with better performance compared with conventional LUT technique in terms of convergence speeds, BER and total degradation (TD). It can get over 8 dB gain in out-of-band spectrum re-growth suppression and about 0.3 dB BER performance gain than conventional LUT technique with the same iteration times. Also, we propose an actual application of HPA with pre-distorter in OFDM transmitter. Ai Bo was born in Shannxi Province in China on February 7, 1974. He received a BSc. Degree from Engineering Institute of Armed Police Force in 1997, a Master and Dr. degree from Xidian University in 2002 and 2004 in China respectively, and now working as a post dr. in Dept. of E&E, state of key lab. on microwave and digital communications in Tsinghua University in China. He has once participated in the key research project on HDTV in TEEG (Team of Engineering Expert Group) of China. He is an editorial committee member of journal of “Computer Simulations”, “Information and Electronic Engineering”, an IEEE member and a senior member of Electronics Institute of China (CIE). He has published over 60 scientific papers in his research area till now. His current interests are the research and applications of OFDM techniques with emphasis on synchronization and HPA linearization techniques. Yang Zhi-Xing graduated from Tsinghua University, P.R. China in 1970. He is now a Professor and Deputy Director of State Key Lab. on Microwave and Digital Communication at the Department of Electronic Engineering and the Director of the DTV R&D Center in Tsinghua University. As a DTV technical expert for the Chinese government, Professor Yang has also been a member of the DTV standardization Committee of China and a leader of the DTV Standardization Harmonizing Group in Ministry of Information Industry of China. His major research interests include broadband information transmission technologies and DTV broadcasting systems. Pan Chang-Yong received the B.S. and M.S. degrees from the Department of Electronic Engineering in Tsinghua University, P.R. China, in 1996 and 1999, respectively. He is now an associate professor in the Department of Electronic Engineering and a member of the DTV R&D Center in Tsinghua University. His research interests are in the areas of broadband wireless transmission systems and satellite communications. Zhang Tao-Tao was born in Shandong Province in China in 1982, he received BSc. degree from Tsinghua University in 2004 and now pursing his Master degree in Dept. of E&E, state of key lab. on microwave and digital communications in Tsinghua University in China. His research interests is the power amplifier linearization techniques. Wang Yong was born in Shannxi Province in China in 1976. He received a BSc., a Master and a Dr. Degree from Xidian University in China in 1997, 2002 and 2005, respectively, and now is an associate professor in Xidian University. He has once participated in the key research project on HDTV in TEEG (Team of Engineering Expert Group) in China and is an IEEE Member. His interests are broadband multimedia communications. Ge Jian-Hua was born in September, 1961 in JiangSu Province in China. He received the B.Sc., Master and Ph.D. degree from Xidian University in 1982, 1985 and 1989, respectively. He is now the professor in both Xidian University in Xi’an and Shanghai Jiaotong University in Shanghai. He is the senior member of Chinese Electronics Institute. He has won lots of scientific and technical prizes in China and published many papers. His interests are transmission communications and web security.     

A Strategy for Broad-Band Network Introduction in Italy

Studies are being carried out in Italy concerning the strategy for the introduction in the 1990's of optical fiber systems in the distribution network, in order to supply customers with broad-band services (in particular with video services). This paper deals with some of the main choices that are being done, in particular in view of a field trial which is planned in Rome in 1988.     

Photovoltaics in architecture in The Netherlands: an architect's view

The Netherlands has a programme for the integration of photovoltaic (PV) modules in the built environment. The aim of this programme is to realize 250 MWp in PV systems by the year 2010. Within this programme the integration of PV modules in architecture has an important role, presenting opportunities for architects. New Technology and materials are an invitation for new design. BEAR Architecten is involved in several low-energy, bio-climatic building projects, amongst them are a few PV projects: De Kleine Aarde, an Environmental Education Centre with transparent PV panels in the glass roof; roof retrofit with PV modules in five houses in Leiden; facade integration with PV shading in 22 houses in Dordrecht; roof integration in row houses in Enschede; roof integration in a utility building in Geldermalsen. Information about these projects is given, but also the possibilities and the problems are discussed here. A general conclusion is that custom-made modules are often necessary to make well-designed buildings.     

Changes in hemoglobin and ferritin biosynthesis in leukemias detected by M?ssbauer spectroscopy

The primary results of the study of hemoglobin and ferritin in erythrocytes in leukemia are considered in the light of the M?ssbauer spectroscopy data. The quantitative changes in hemoglobin and ferritin during differentiation of cells in the Friend erythroleukemia are shown. The qualitative changes in iron electronic structure of oxyhemoglobin in different forms of human leukemias are shown.     

微孔无铜原因分析与改善

文章主要分析了PCB制造过程中微孔出现孔无铜的各类原因以及改善预防措施,并且详细介绍了对于火山灰堵孔造成的微孔孔无铜的原因分析。     

Lipid metabolic disorders in rats with a transplanted Pliss lymphosarcoma

Changes in biosynthesis of cholesterol and free fatty acids from 2-14C-acetate in the host liver and tumour tissue as well as concentrations of various classes of lipids in blood were determined in rats bearing the transplanted Pliss lymphosarcoma. The transplantation of the tumour stimulates cholesterol biosynthesis de novo in the liver, but produces no changes in the fatty acid synthesis. Tumour growth is accompanied by a progressive increase in the content of triglycerides and beta-lipoproteins with a parallel drop in the alpha-cholesterol level in the animal blood. The concentration of total cholesterol is of phasic character depending on the stage of tumour growth. The possible mechanisms determining such alterations in lipids metabolism are discussed.     

Growth of AlGaN epitaxial layers and AlGaN/GaN superlattices by metal-organic chemical vapor deposition

Special features of metal-organic chemical vapor deposition of AlGaN epitaxial layers and AlGaN/GaN superlattices either in an Epiquip VP-50 RP research and development reactor (for a single wafer 2 in. in diameter) or in an AIX2000HT production-scale reactor (for up to six wafers 2 in. in diameter) are stud-ied. It is found that the dependence of the aluminum content in the solid phase on the trimethylaluminum (TMA) flux in a reactor levels off; this effect hinders the growth of the layers with a high aluminum content in both types of reactors and is more pronounced in the larger reactor (AIX2000HT). Presumably, this effect is a consequence of spurious reactions in the vapor phase and depends on the partial pressure of TMA in the reactor. The aluminum content in the layers can be increased not only by reducing the total pressure in the reactor but also by increasing the total gas flow through the reactor and reducing the trimethylgallium flux. The approaches described above were used to grow layers with a mole fraction of AlN as large as 20% in the AIX2000HT production-scale reactor at a pressure of 400 mbar (this fraction was as large as 40% at 200 mbar). AlGaN layers with the entire range of composition were grown in the Epiquip VP-50 RP reactor.     

A comparison of Japanese and US high-technology transfer practices

Some empirical results and observations are presented which describe the principal ways in which a sample of industrial researchers in Japan and in the US utilize certain technologies resulting from university research. The findings are from a survey conducted in Japan and the US between October 1986 and December 1987. These results indicate that personal communications and technical collaboration are the key factors in the rapid diffusion of research results in both countries, and that in Japan, government agencies and professional societies take a much more active role in organizing and energizing the civilian technology-transfer process than do counterpart organizations in the US     

Negative bias temperature instability in n-channel power VDMOSFETs

Negative gate bias is used in some applications for faster switching off the n-channel MOS devices. It is shown in this study that NBT stress-related instability in commercial n-channel power VDMOSFETs could be actually more serious than in corresponding p-channel devices. NBT stress is found to create equal V_T shifts in both device types, whereas the subsequent positive bias annealing results in more serious overall V_T instability in n-channel devices. The changes in the densities of stress-induced interface traps in two device types are equal as well, but significant amounts of NBT stress-induced border traps are only found in n-channel devices. All the results are discussed in terms of hydrogen reaction and diffusion model.     

微视频在高校计算机操作性课程中的应用探究

微视频在学校各类教育中应用越来越普遍.依据微视频的教学特点,针对高校计算机操作性课程中存在的问题,本研究依据ADDIE模型和ARCS动机理论,探索构建微视频在高校计算机操作性课程中的教学应用模型,通过教学案例展示微视频在课堂应用中教与学的过程,利用微视频提高课堂教学质量.     

Effect of intravascular pressure changes on the induction of bone neoplasms in rats

The development of bone tumours induced by 3,4-benzpyrene in rats with arterial hypotension and venous congestion was studied. Six months after, osteogenous sarcomas were detected in 36% of animals with normal pressure, in 10%--with arterial hypotension and in 58%--with venous congestion. The differences in the antitumor tissue resistance under chemical blastomogenesis, as well as in cases of transplanted tumours, are supposed to depend on the character of compensatory rearrangements in the microcirculatory bed in response to the intravascular pressure change.     

Principles of flicker noise spectroscopy and its application to disordered semiconductors: IonImplanted silicon

Flicker noise spectroscopy in disordered semiconductors is gaining wide acceptance both in physical investigation and in analysis of various microelectronics processes. Its successful use as a diagnostic tool in microtechnology is a result of advances in fundamental studies of flicker noise in semiconductors with disordered structure. In this work, we systematize experimental data for flicker noise phenomena in disordered semiconductors, specifically, in ion-implanted silicon     

一种红外探测器效应的实时模拟方法

文中剖析了Ogre渲染引擎的工作原理,描述了基于GPU的后处理技术,利用Ogre渲染引擎通过GPU实现了二维快速傅里叶变换,添加了探测器成像系统调制传递函数(MTF),实现了系统线性噪声和随机噪声的添加,模拟了实时三维红外场景中的探测器效应.     

Prof. James R. Wait and mining production technology-anappreciation

Prof. James R. Wait (1951, 1953, 1967) examined electromagnetic (EM) wave propagation in many situations of interest to mining production, including propagation in tunnels, propagation along extended conductors such as cables and drill stems, and propagation in coal seams. This work remains relevant, both to the mining engineer interested in the EM environment of an operating mine and to the electrical engineer interested in verifying new computational techniques and in extending the scope of EM technology in mining production. Late work in EM focussing in a geological environment is relevant to “next generation” geophysical monitoring equipment     

Variations in optical absorption spectra of adult and fetalhaemoglobins and its effect on pulse oximetry

One of the concerns clinicians have relates to the interpretation of noninvasive pulse oximeters in newborns since at birth high levels of fetal hemoglobin (HbF) is present in the blood. Accurate in vivo studies of pulse oximeters in infants with predominantly HbF cannot be easily performed. Therefore, the objective of this in vitro study was to determine whether the presence of high levels of HbF in the blood can significantly affect the accuracy of noninvasive pulse oximeters. It is evident from our results that there is no perceptible difference in the 650-1000 nm wavelength region, which is commonly used in pulse oximetry, between the optical absorption spectra of hemolyzed whole adult and fetal blood. Our observations are in good agreement with in vivo studies published by other investigators showing considerable correlations between SpO2 measured by a pulse oximeter and SaO2 values analyzed in vitro by an IL 282 CO-Oximeter.