基于隧道电流检测方式的原子力显微镜纳米检测系统设计

原子力显微镜（AFM）是当前进行材料表面微观形貌观察及分析的强有力工具之一。本文主要介绍一种隧道显微镜（STM）检测方式的原子力显微镜纳米检测系统（AFM.IPC-208B）,该AFM系统设计是在STM.IPC-205B系统设计的基础上,采用隧道电流工作方式,将STM与AFM功能组合兼容。文章详细阐述了AFM.IPC-208B系统的设计原理、镜体、扫描控制以及数据采集。新设计的AFM.IPC-208B系统仍具有0.1nm的分辨率,检测范围为0～2mm×2mm,系统操作简易,工作效率高,与原STM.IPC-205B系统兼容,工作性能稳定可靠。     

Atomic‐Scale Manipulation and In Situ Characterization with Scanning Tunneling Microscopy

Scanning tunneling microscope (STM) has presented a revolutionary methodology to nanoscience and nanotechnology. It enables imaging of the topography of surfaces, mapping the distribution of electronic density of states, and manipulating individual atoms and molecules, all at atomic resolutions. In particular, atom manipulation capability has evolved from fabricating individual nanostructures toward the scalable production of the atomic‐sized devices bottom‐up. The combination of precision synthesis and in situ characterization has enabled direct visualization of many quantum phenomena and fast proof‐of‐principle testing of quantum device functions with immediate feedback to guide improved synthesis. Several representative examples are reviewed to demonstrate the recent development of atomic‐scale manipulation, focusing on progress that addresses quantum properties by design in several technologically relevant materials systems. Integration of several atomically precisely controlled probes in a multiprobe STM system vastly extends the capability of in situ characterization to a new dimension where the charge and spin transport behaviors can be examined from mesoscopic to atomic length scale. The automation of atomic‐scale manipulation and the integration with well‐established lithographic processes further push this bottom‐up approach to a new level that combines reproducible fabrication, extraordinary programmability, and the ability to produce large‐scale arrays of quantum structures.     

单晶硅表面STM成像理论模型与实验分析

结合扫描隧道显微镜(STM)成像实验和第一性原理原子级模拟计算的方法已经成为材料界面表征的重要手段。超高真空条件下的STM可用于直接观察单原子等微观结构,但其成像原理还未被理解清楚。STM扫描测得的试件表面原子级图像并不直接反映材料原子的形态,实际上是表面形貌和表面电子态局域密度的综合结果。为了解释STM成像,采用第一性原理Siesta方法,研究了Si(001)面STM成像过程的电子结构,对表面粒子的原子轨道和相应的电荷密度进行计算。讨论了等高模式下扫描高度对局域电子云密度分布的影响,并分析了STM针尖几何形状对模拟结果的影响。研究表明,材料表面原子的电子云密度分布可以用来解释STM成像精度和扫描高度对比的变化。     

AFM／STM的反馈控制系统研究及其设计

扫描隧道显微镜（ＳＴＭ）和原子力显微镜（ＡＦＭ）由于具有原子量级的分辨率，所以在表面物理、化学、生物等领域得到了越来越广泛的应用。但是，他们在工作上不能彼此兼容。为此，研制了一台新仪器，既可用作ＳＴＭ，又可作为ＡＦＭ。本文介绍了该仪器的反馈控制系统及其设计。实验表明，这套反馈系统工作稳定可靠，它使仪器至少可达到纳米量级的分辨率。     

溶液中细胞色素b6f的原子力显微镜和扫描隧道显微镜观测

本文用原子力显微镜(atomic force microscope,AFM)和扫描隧道显微镜(scanning tunneling microscope,STM)在Tricine-NaOH-OG缓冲溶液中研究了细胞色素b6f(Cytochrome b6f,Cyt b6f)在固体表面上的吸附形态。首先用AFM观察了吸附在云母表面上的cyt b6f复合体,观察到了分散较好的蛋白质颗粒。进一步用高分辨率的电化学STM(EC-STM)观察了吸附在Au(111)表面上的cyt b6f分子,在浓度较低时发现了其二聚体的吸附形态,而在浓度较高时cyt b6f分子在Au(111)表面聚集成薄膜。     

Development of augmented reality system for AFM-based nanomanipulation

Using atomic force microscopy (AFM) as a nanomanipulation tool has been discussed for more than a decade. However, its lack of real-time visual feedback during manipulation has hindered its wide application. Fortunately, this problem has been overcome by our recently developed augmented reality system. By locally updating the AFM image based on real-time force information during manipulation, not only can this new system provide real-time force feedback but also real-time visual feedback. The real-time visual display combined with the real-time force feedback provides an augmented reality environment, in which the operator not only can feel the interaction forces but also observe the real-time changes of the nano-environment. This augmented reality system capable of nanolithography and manipulation of nano-particles helps the operator to perform several operations without the need of a new image scan, which makes AFM-based nano-assembly feasible and applicable.     

STM碳纳米管针尖的研究

合成和提纯了单壁碳纳米管（SWCNTs)。使用水溶胶体,SWCNTs被组装在钨（W）针尖上,它可以用作扫描隧道显微镜（STM）的针尖,得到高定向石墨（HOPG）和金（Au)膜表面的原子分辨像,用场发射显微镜（FEM）研究了SWCNTs的场发射特性,得到了原子分辨的场发射图,与计算的（9,9）扶手椅型的SWCNT结构相一致,研究了SWCNTs的电学特性,观察到了负阻特性。     

光记录有机薄膜的扫描隧道显微镜研究

运用扫描隧道显微镜（ＳＴＭ）观察了光记录有机薄膜的微观结构。从微观结构的形貌可以看出光记录后酞菁薄膜上产生了鼓泡。不同能量的激光脉冲产生具有不同细微结构的鼓泡，光盘的性能与鼓泡的尺寸密切相关。研究结果说明ＳＴＭ是研究光盘微观结构的有力工具。     

Defects and strains at magnetic and semiconductor interfaces

Defects and strains at surfaces and interfaces are examined with respect to how they can be measured and how they affect resulting magnetic, electronic or mechanical properties. Emphasis is on MnZn ferrite, GaAs and PbS with deformation being examined by selected area channeling pattern (SACP), transmission electron microscopy (TEM), and scanning tunneling microscopy (STM) techniques. Damage produced during preparation of magnetic surfaces is examined by broadening of lines in SACP patterns while epitaxial strains and their relaxations by dislocations are estimated using both line shifts of SACP patterns and direct imaging by TEM. Of particular importance is that a new SACP method with accuracy approaching 0.1 percent has been developed for non-destructive examination of epitaxial strains in InGaAs/GaAs. Also, for the first time microcrack features in a low band gap semiconductor have been examined with STM.     

The device characteristics of missing LDD implantation via nanoprobing techniques for localized failure analysis

In the recent years, localization of subtle defects has required device electrical data. Nanoprobing systems based on scanning electron microscopy (SEM) or atomic force microscopy (AFM) have become a significant tool for device measurement in failure analysis (FA) Labs. Failure Analysts can use electrical characteristics to isolate failure location in the metal–oxide–semiconductor field-effect-transistor (MOSFET). The missing lightly doped drain (LDD) implant is an example of a critical failure mechanism for the MOSFET and cell in the SRAM which is localized using nanoprobing. In this article, device data analysis and theoretical deductions are discussed related to missing LDD doping. Device data is used to propose a full set of characteristic for missing LDD. The simulation from a mature tool is able to support the electrical characteristics. The capability and challenge of the following physical FA to reveal the defect are also discussed.     

Interface structure in arsenide/phosphide heterostructun grown by gas-source MBE and low-pressure MOVPE

We have used cross-sectional scanning tunneling microscopy (STM) to study interface structure in arsenide/phosphide heterostructures grown by gas-source molecular beam epitaxy (GSMBE) and by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). High-resolution images of GSMBE samples consisting of GaAs interrupted at 200Å intervals with a 40 s P₂ flux reveal substantial, growth-temperature-dependent incorporation of phosphorus with nanometer-scale lateral variations in interface structure. STM images of InGaAs/InP multiple quantum well structures grown by LP-MOVPE show evidence of interface asymmetry and extensive atomic cross-incorporation at the interfaces. Data obtained by STM have been corroborated by high-resolution x-ray diffraction and reflection high-energy electron diffraction. Together, these studies provide direct information about nanometer-scale grading and lateral nonuniformity of arsenide/phosphide interfaces that can occur under these growth conditions.     

Variable structure control of a piezoelectric actuator for a scanning tunneling microscope

Scanning probe microscopes are now widely used in the field of material science and engineering for surface imaging at atomic scale. Their principle is based on the surface probing by a sharp tip approached at a nanometric distance of the surface. The probe is fixed to piezoelectric actuators allowing its displacement above the surface. An electronic command of a scanning tunneling microscope (STM) has been designed and tested. The regulation feedback loop of the tunnel current includes an integral controller, as is the case in commercial equipment. An extra control by variable-structure system has been implemented on this electronic command. Its principle is based on the commutation of the feedback sign. The effect on the system performance of the variable structure control is presented and discussed. An STM head has been modeled and all the model parameters have been determined. The model has been validated by comparison of the experimental and simulated responses of the system under excitation.     

Simultaneous STM and UHV electron microscope observation of silicon nanowires extracted from Si(111) surface

A miniaturized scanning tunnelling microscope (STM) was fitted in a side-entry holder of an ultra-high vacuum electron microscope. The clean Si(111)7 x 7 surface was observed by both STM and reflection electron microscopy (REM) at atomic resolution. The tungsten tips were often rounded off upon tip-approach with a constant current, through a gentle touch with the sample surface. The apices of such rounded tips had radii of several tens of granometre with widths of about 3 x 3 nm. Atomically resolved STM of the Si(111)7 x 7 surface was obtainable when an atom or an atomic cluster sits on the tip surface. The rounded tips were used for fabrication of Si nanowires by the touch-and-away operation of the tip. The nanowires grew longer at higher substrate temperature and they reached as long as several tens of nanometre at 700 degrees C. The nanowire had many twins and the (111) twin lamellae were stacked in the direction of the wire axis. In another case, the twin planes were oblique to the wire axis so that the (112) direction was nearly parallel to the wire axis.     

AFM/STM系统中微悬臂的设计和研制

扫描隧道显微镜（ＳＴＭ）和原子力显微镜（ＡＦＭ）由于具有原子量级的分辨率,所以在表面物理、化学、生物等领域得到了越来越广泛的应用。我们研制了一个ＡＦＭ／ＳＴＭ系统,它利用隧道电流检测微悬臂的位移,既可用作ＡＦＭ,又可作为ＳＴＭ。本文介绍了这个系统的微悬臂的设计和研制。实验表明,这种微悬臂使系统可以达到纳米量级的分辨率。     

In situ STM characterisation of epitaxial layers in a 3-inch MBE system

The structural characterisation of evaporated layers on an atomic scale is one of the most important problems in epitaxy. In this paper an experimental set up of an scanning tunneling microscope (STM) is described which allows work in an UHV chamber attached to a commercial Si-MBE system. 3-inch wafers, just prepared or sited with Si/ Ge can be transferred directly into the STM chamber. Although the common set-up of the MBE system is used the stability of the STM against vibrations and thermal drift allows one to achieve atomic resolution. For demonstration, pictures of the well known 7 × 7 structure of the Si(111) orientation are shown. Differences in the surface structure of thermally cleaned samples and epitaxial layers are presented.     

Surface analytical techniques

This review briefly describes some of the techniques available for analysing surfaces and illustrates their usefulness with a few examples. In particular, Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), sputter neutral mass spectroscopy (SNMS) and laser Raman spectroscopy are all described. In analysing a surface, AES and XPS would normally be considered first, with AES being applied where high spatial resolution is required and XPS where chemical state information is needed. SIMS and SNMS can be performed together and can detect smaller surface concentrations. Laser Raman spectroscopy is useful for determining molecular bonding. Techniques which give topographic information, such as scanning tunnelling microscopy (STM) and atomic force microscopy (AFM), have not been considered.     

Influence of Thiol Self‐Assembled Monolayer Processing on Bottom‐Contact Thin‐Film Transistors Based on n‐Type Organic Semiconductors

The performance of bottom‐contact thin‐film transistor (TFT) structures lags behind that of top‐contact structures owing to the far greater contact resistance. The major sources of the contact resistance in bottom‐contact TFTs are believed to reflect a combination of non‐optimal semiconductor growth morphology on the metallic contact surface and the limited available charge injection area versus top‐contact geometries. As a part of an effort to understand the sources of high charge injection barriers in n‐channel TFTs, the influence of thiol metal contact treatment on the molecular‐level structures of such interfaces is investigated using hexamethyldisilazane (HMDS)‐treated SiO₂ gate dielectrics. The focus is on the self‐assembled monolayer (SAM) contact surface treatment methods for bottom‐contact TFTs based on two archetypical n‐type semiconductors, α,ω‐diperfluorohexylquarterthiophene (DFH‐4T) and N,N′bis(n‐octyl)‐dicyanoperylene‐3,4:9,10‐bis(dicarboximide) (PDI‐8CN₂). TFT performance can be greatly enhanced, to the level of the top contact device performance in terms of mobility, on/off ratio, and contact resistance. To analyze the molecular‐level film structural changes arising from the contact surface treatment, surface morphologies are characterized by atomic force microscopy (AFM) and scanning tunneling microscopy (STM). The high‐resolution STM images show that the growth orientation of the semiconductor molecules at the gold/SAM/semiconductor interface preserves the molecular long axis orientation along the substrate normal. As a result, the film microstructure is well‐organized for charge transport in the interfacial region.     

扫描隧道显微镜图像重建的研究

在扫描隧道显微镜轮廓测量过程中,探针自身的几何形状会混入测量结果中,从而造成相应的测量误差。本文提出了根据对标准样品的测量结果,反算出探针的几何形状的算法,并应用于实没图像示解出探针的几何形状。在求得探针的几何形状后,文中推导了去除探针几何形状造成的误差,对扫描隧道显微镜图像进行重建的算法,并对实测样品进行了处理。结果表明上术坷有效地减少小探针自形状造成的测量误差。     

STM/AFM nano-oxidation process to room-temperature-operatedsingle-electron transistor and other devices

Application of a scanning tunneling microscopy (STM) and an atomic force microscopy (AFM) to electron devices and an optical device are introduced in this paper. Using STM tip/AFM cantilever as a cathode, surfaces of a metal or a semiconductor are oxidized to form a few tens of nanometers-wide oxidized metal line or an oxidized semiconductor line, which works as an energy barrier for an electron. A single-electron transistor (SET), a photoconductive switch, and a high-electron mobility transistor (HEMT) are fabricated using this fabrication process. The fabricated SET operates even at high room temperatures and shows the large Coulomb gap and staircase of 200-mV periods and the large Coulomb oscillation periods of 406 mV. The fabricated photoconductive switch shows a ultra-fast response time, i.e., a full-width at half-maximum response of 380 fs at a bias voltage of 10 V. The drain current of HEMT was controlled by the oxidized semiconductor wire on the channel region formed by this fabrication process     

Self‐Assembled Conjugated Thiophene‐Based Rotaxane Architectures: Structural,Computational, and Spectroscopic Insights into Molecular Aggregation

A comparative study of the self‐assembly at a variety of surfaces of a dithiophene rotaxane 1 ?β‐CD and its corresponding dumbbell, 1, by means of atomic force microscopy (AFM) imaging and scanning tunneling microscopy (STM) imaging on the micrometer and nanometer scale, respectively. The dumbbell is found to have a greater propensity to form ordered supramolecular assemblies, as a result of π–π interactions between dithiophenes belonging to adjacent molecules, which are hindered in the rotaxane. The fine molecular structure determined by STM was compared to that obtained by molecular modelling. The optical properties of both rotaxane and dumbbell in the solid state were investigated by steady‐state and time‐resolved photoluminescence (PL) experiments on spin‐cast films and diluted solutions. The comparison between the optical features of the threaded and unthreaded systems reveals an effective role of encapsulation in reducing aggregation and exciton migration for the rotaxanes with respect to the dumbbells, thus leading to higher PL quantum efficiency and preserved single‐molecule photophysics for longer times after excitation in the threaded oligomers.