Electrical characteristics of mixed Zr-Si oxide thin films prepared by ion beam induced chemical vapor deposition at room temperature

Mixed Zr-Si oxide thin films have been prepared at room temperature by ion beam decomposition of organometallic volatile precursors. The films were flat and amorphous. They did not present phase segregation of the pure single oxides. A significant amount of impurities (-C-, -CH_x, -OH, and other radicals coming from partially decomposed precursors) remained incorporated in the films after the deposition process. This effect is minimized if the Ar content in the O₂/Ar bombarding gas is maximized. Static permittivity and breakdown electrical field of the films were determined by capacitance-voltage and current-voltage electrical measurements. It is found that the static permittivity increases non-linearly from ~ 4 for pure SiO₂ to ~ 15 for pure ZrO₂. Most of the dielectric failures in the films were due to extrinsic breakdown failures. The maximum breakdown electrical field decreases from ~ 10.5 MV/cm for pure SiO₂ to ~ 45 MV/cm for pure ZrO₂. These characteristics are justified by high impurity content of the thin films. In addition, the analysis of the conduction mechanisms in the formed dielectrics is consistent to Schottky and Poole-Frenkel emission for low and high electric fields applied, respectively.     

Nanocluster deposition for oxide thin film growth at near room temperature

Metal-organic chemical vapor deposition (MOCVD) at near room temperature would not only enable integration of oxide films on polymers but would provide the capability of conformal coating of high-aspect ratio features required for fabrication of many micro-and nanoelectronic devices. The concept of near room temperature MOCVD (nanocluster deposition: NCD) consists of the production of a single phase with nanosized crystalline nuclei by a chemical vapor reaction at the showerhead maintained above the decomposition temperature of the precursors and consequently deposition of the nanosized crystalline films on unheated substrates. Deposition of the nanosized crystalline nuclei on unheated substrates was performed by controlling both the showerhead temperature and the working pressure. The Bi(3)NbO(7) (BNO) films deposited without substrate heating (real temperature of substrate surface: 50?°C) exhibit a crystalline single phase with smooth and dense morphologies, a dielectric constant of 30, a leakage current density of ～10(-6)?A?cm(-2) at 0.3?MV?cm(-1) and a step coverage of approximately 93% for films deposited at 100?°C on high-aspect ratio features. An NCD provides a new platform for near room temperature deposition of oxide thin films, opening the way for film deposition on polymer substrates to enable a flexible electronic device technology.     

Ion-assisted deposition of moisture-stable hafnium oxide films for ultraviolet applications

A design-of-experiments statistical approach was taken to determine the optimum ion gun operating parameters for the deposition of moisture-stable, low-absorbing hafnium oxide films by ion-assisted electron-beam evaporation. Factors identified as affecting the quality of hafnia films were chamber pressure, deposition rate, ion gun source gas composition, and ion gun current. Both oxygen and argon were used as source gases. High and low levels of the factors were chosen on the basis of our experience with the operating range of the system, and we made a series of 24 runs with all possible combinations of these factors. From a statistical analysis of the data, we find that the best films are obtained with a 1:1 mixture of argon and oxygen, 3-3.5 x 10(-4) Torr chamber pressure, 0.3-nm/s deposition rate, and 0.5-A ion gun current. X-ray diffraction measurements show that the ion-assisted films exhibit a partial monoclinic crystalline structure, whereas the unassisted films are amorphous.     

Ion-assisted deposition of MgF2 at ambient temperatures

We have investigated the use of a low energy (less than 250 eV) argon ion beam bombardment during the deposition of thin MgF₂ films onto unheated substrates to increase their abrasion resistance and their adhesion. Films made in this manner have a durability comparable with that of films deposited at 300 °C. The UV absorption edge of the films shifts to slightly longer wavelengths, but no significant additional absorption is introduced in the visible region. Transmission electron microscopy and X-ray diffraction studies show that the structure of the bombarded films is different from that of the unbombarded films, deposited onto either hot or ambient temperature substrates. Rutherford backscattering shows the bombarded films to have some fluorine depletion. These films adhere to plastics significantly better than do those deposited without bombardment.     

Al-doped ZnO films by pulsed laser deposition at room temperature

Polycrystalline Al-doped ZnO films with good photoluminescence property were successfully deposited on quartz glass substrates by pulsed laser deposition (PLD) at room temperature. The films were obtained by ablating a metallic target (Zn:Al 3 wt%) at various laser energy densities (1.0-2.1 J/cm²) in oxygen atmosphere (9 Pa). The structure of the films was characterized by XRD. Ultraviolet photoluminescence centered at 359-361 nm was observed in the room temperature PL spectra of the Al-doped ZnO films.     

Pulsed-laser deposition of textured cerium oxide thin films on glass substrates at room temperature

Cerium oxide thin films are deposited on glass by pulsed laser deposition at room temperature and characterized by X-ray diffraction and atomic force microscopy. The effects of ambient gas, rate of deposition and fluence on growth of films have been studied. The films grown in forming gas and with a high rate of deposition are polycrystalline and show preferential orientation along <011> direction with a roughness of ∼ 2 nm. Films prepared in oxygen have low crystallinity.     

Spectroscopic ellipsometry studies on various zinc oxide films deposited by ion beam sputtering at room temperature

Various zinc oxide films were deposited by ion-beam sputter deposition (IBSD) under different oxygen partial pressures (P(O2)) at room temperature. The as-deposited ZnO films fabricated at P(O2)>1.0×10(-4) Torr had poly-crystalline structures to absorb water on the surface at ambient condition. Simultaneously, the film surfaces were covered and smoothed by the surface layers formed with the water, hydroxyl (OH(-)) groups, and ZnO materials investigated by X-ray photoelectron spectroscopy (XPS). When the compositions of the surface layers were used in a multilayer fitting model of spectroscopic ellipsometry, the actual optical refractive index of the ZnO film deposited at P(O2)=1.2×10(-4) Torr was found to be about 1.9618 at λ=550 nm.     

New semiconductor materials for magnetoelectronics at room temperature

Most of the semiconductor materials are diamagnetic by nature and therefore cannot take active part in the operation of the magneto electronic devices. In order to enable them to be useful for such devices a recent effort has been made to develop diluted magnetic semiconductors (DMS) in which small quantity of magnetic ion is introduced into normal semiconductors. The first known such DMS are II-VI and III-V semiconductors diluted with magnetic ions like Mn, Fe, Co, Ni, etc. Most of these DMS exhibit very high electron and hole mobility and thus useful for high speed electronic devices. The recent DMS materials reported are (CdMn)Te, (GaMn)As, (GaMn)Sb, ZnMn(or Co)O, TiMn(or Co)O etc. They have been produced as thin films by MBE and other methods. This paper will discuss the details of the growth and properties of the DMS materials and some of their applications.     

Abnormal structure of titanium formed by ion beam sputtering at room temperature

Stable fcc modification of titanium (a=0.420 nm) has been observed in ion beam sputtered films at room temperature. When the deposition rates are above 0.8 Å/s, the normal hcp structure is obtained.     

Pulsed laser deposition of indium tin oxide films on flexible polyethylene naphthalate display substrates at room temperature

Pulsed laser deposition was used to deposit high-quality indium tin oxide (ITO) thin solid films on polyethylene napthalate (PEN) flexible display substrates. The electrical, optical, microstructural, mechanical and adhesive properties of the functional thin layer were investigated as a function of a narrow range of background oxygen gas pressure at room temperature, which is the most desirable thermal condition for growing transparent conducting oxides on flexible display polymer substrates. ITO films (240 ± 35 nm thick) deposited on PEN at room temperature in the range of 0.33 to 2.66 Pa background oxygen pressure are observed to exhibit low electrical resistivity (~ 10^− 4 Ω cm) and high optical transmission (~ 90%). Electromechanical uniaxial tensile testing, of the hybrid thin structures, results in crack onset nominal strains of around 2%. The ITO surface adhesion reaches a maximum at 1.33 Pa deposition pressure.     

Ar ion induced copper germanide phase formation at room temperature

The copper germanide phase Cu₃Ge which is emerging as an alternative material for making contacts and interconnects for semiconductor industry has been produced across the interface of Cu/Ge bilayers by ion beam mixing at room temperature using 1 MeV Ar ions. The dose dependence of the thickness of the mixed region shows a diffusion controlled mixing process. The experimental mixing rate and efficiency for this phase are 5·35 nm⁴ and 10·85 nm⁵/keV respectively. At doses above 8 × 10¹⁵ Ar/cm² the formation and growth of another copper rich phase Cu₅Ge has been observed. The present theoretical models are inadequate to explain the observed experimental mixing rate.     

Zinc cadmium oxide thin film transistors fabricated at room temperature

Zinc cadmium oxide (ZnCdO) transparent thin film transistors (TFTs) have been fabricated with a back-gate structure using highly p-type Si (001) substrate. For the active channel, 30 nm, 50 nm, and 100 nm thick ZnCdO thin films were grown by pulsed laser deposition. The ZnCdO thin films were wurtzite hexagonal structure with preferred growth along the (002) direction. All the samples were found to be highly transparent with an average transmission of about 80%~ in the visible range. We have investigated the change of the performance of ZnCdO TFTs as the thickness of the active layer is increased. The carrier concentration of ZnCdO thin films has been confirmed to be increased from 10¹⁶ to 10¹⁹ cm⁻³ as the film thickness increased from 30 to 100 nm. Base on this result, the ZnCdO TFTs show a thickness-dependent performance which is ascribed to the carrier concentration in the active layer. The ZnCdO TFT with 30 nm active layer showed good off-current characteristic of below ~ 10¹¹, threshold voltage of 4.69 V, a subthreshold swing of 4.2 V/decade, mobility of 0.17 cm²/V s, and on-to-off current ratios of 3.37 × 10⁴.     

Coordination-induced formation of nanobelts of organic-inorganic hybrid materials at room temperature

The unexpected finding that the direct mix of o-phenylenediamine and H₂PdCl₄ aqueous solution at room temperature leads to supramolecular nanobelts of coordination polymers was reported. The morphology of the structures was characterized by scanning electron microscopy (SEM) and the chemical composition was examined by energy-dispersed spectrum (EDS) and X-ray maps analysis. The possible formation process of such supramolecular nanobelts is given and the influence of the molar ratio of reactants on the formation of these nanobelts is also examined. It is also found that the molar ratio of reactants has strong influence on the formation of the supramolecular structures.     

Structural characterization of sputtered indium oxide films deposited at room temperature

Structural evolution of indium oxide thin films deposited at room temperature by reactive magnetron sputtering and annealing in a reducing atmosphere were investigated. The as deposited indium oxide (In₂O₃) films showed a dominating randomly oriented nanocrystalline structure of cubic In₂O₃. The grain size decreased with increasing oxygen concentration in the plasma. Annealing in reducing atmospheres (vacuum, nitrogen and argon), besides improving the crystallinity, led to a partial cubic to rhombohedral phase transition in the indium oxide films. Annealing improved the optical properties of the indium oxide film and shifted the absorption edge to higher energies.     

Indium zinc oxide semiconductor thin films deposited by dc magnetron sputtering at room temperature

Amorphous indium zinc oxide (IZO) thin films were prepared on glass substrates by dc magnetron sputtering at room temperature. The resistivity of IZO films could be controlled between 3.8 × 10⁻³ and 2.5 × 10⁶ Ω cm by varying the oxygen partial pressure during deposition, while keep the average transmittance over 83%. With IZO films as channel layers, whose surface root-mean-square roughness was less than 1 nm, thin film transistors were fabricated at room temperature, showing enhanced mode operation with good saturation characteristics, mobility of 5.2 cm² V⁻¹ s⁻¹, threshold voltage of 0.94 V and on/off ratio of ∼10⁴.     

离子束沉积技术室温生长Si/Ge薄膜的晶化研究

研究Si的室温晶化生长对微电子应用技术是十分重要的.本文采用离子束外延技术制备了一系列的Si/Ge多层膜结构,对样品进行X射线和拉曼散射实验表征.研究表明Ge可诱导膜中Si薄层的室温晶化,当Ge厚度略小于Si薄层厚时,获得最佳的Si室温晶化效果.     

Cerium (IV) oxide nanotubes prepared by low temperature deposition at normal pressure

This paper reports the synthesis of cerium dioxide nanotubes (CeNTs) by electroless deposition using ion-track-etched polycarbonate templates. To achieve nanotubes with thin walls and small surface roughness the tubes were generated by a several-step-containing procedure under aqueous conditions. The approach reported below will process open end nanotubes with well-defined outer diameter and wall thickness.     

Comparison study of silicon carbide coatings produced at different deposition conditions with use of high temperature nanoindentation

The elastic modulus and hardness of different silicon carbide (SiC) coatings in tristructural-isotropic (TRISO) fuel particles were measured by in situ high temperature nanoindentation up to 500 °C. Three samples fabricated by different research institutions were compared. Due to varied fabrication parameters the samples exhibited different grain sizes and one contained some visible porosity. However, irrespective of the microstructural features in each case the hardness was found to be very similar in the three coatings around 35 GPa at room temperature. Compared with the significantly coarser grained bulk CVD SiC, the drop in hardness with temperature was less pronounced for TRISO particles, suggesting that the presence of grain boundaries impeded plastic deformation. The elastic modulus differed for the three TRISO coatings with room temperature values ranging from 340 to 400 GPa. With increasing measurement temperature the elastic modulus showed a continuous decrease.     

Microplasticity at room temperature of single-crystal titanium carbide with different stoichiometry

Single crystals of titanium carbide with a C-to-Ti range of 0.64 to 0.99 were plastically deformed at room temperature with a hardness indenter and a drill. The operating slip systems were determined by hardness anisotropy and transmission electron microscopy. The results were characteristic for bulk material deformation of TiC, below, as well as above, the brittle-to-ductile transition temperature. A typical low temperature behaviour is the formation of cracks and dislocation motion along the slip systems {1 1 0} 〈1 1 0〉 and {1 0 0} 〈1 1 0〉, which are both common in the rock-salt structure. The high temperature deformation is characterized by the slip system {1 1 1} 〈1 1 0〉. The degree of plastic deformation and the importance of the slip system {1 1 1} 〈1 1 0〉 increases as the C-to-Ti ratio decreases from 0.99 to 0.64.     

Transmission electron microscopy on nickel oxide single crystals deformed at room temperature

Transmission electron microscopy was performed on nickel oxide single crystals deformed under compression along the [0 0 1] direction, at room temperature. Foils for observation were obtained by mechanical thinning followed by ion beam thinning. The glide system and the Burgers vectors of dislocations were found to be the same as those of MgO and NaCl. For the origin of high rate work hardening, the intersection of glissile dislocations with other inactive dislocations followed by dipole formation, and edge dipole formation which serves as a strong barrier against active slip dislocations, were confirmed. The second stage of work hardening begins with the operation of an oblique second system.On leave of absence from the Department of Natural Science, Osaka Women's University, Daisen-cho, Sakai City, Osaka 590.