Impulse-Based Scheme for Crystal-Less ULP Radios

This study describes a method of implementing a fully integrated ultra-low-power (ULP) radio for wireless sensor networks (WSNs). This is achieved using an ad hoc modulation scheme (impulse radio), with a bandwidth of 17.7 MHz in the 2.4 GHz—ISM band and a specific medium access control (MAC) protocol, based on a duty-cycled wake-up radio and a crystal-less clock generator. It is shown that the total average power consumption is expected to be less than ${100}~muhbox{W}$ with a clock generator inaccuracy of only 1%.      

一种低压CMOS带隙电压基准源

设计了一种与标准CMOS工艺兼容的低压带隙电压基准源,该电路应用二阶曲率补偿,以及两级运算放大器,采用0.8μm BSIM3v3 CMOS工艺,其中,Vthn=0.85 V,Vthp=-0.95 V。用Cadence Spectre软件仿真得出:最小电源电压1.8 V,输出电压590 mV,在0~100℃范围内,温度系数(TC)可达15 ppm/℃,在27℃时输出电压变化率为±2.95 mV/V。     

一种低电压的CMOS带隙基准源

设计了一种用于集成电路内部的带隙基准源，采用了1．0V／0．18μmCMOS工艺。该电路利用电阻分压和高阶温度补偿，达到降低温度率数的目的，并具有好的电源抑制比。SPICE仿真结果表明，在0℃-100℃范围内度可达到18ppm/℃，其电源抑制比可达到62dB。     

一种低电压低功耗高PSRR CMOS基准电路

设计了一种工作在亚阈值区的高精度、低电压、低功耗CMOS基准电路。电路采用0.18 μm CMOS工艺实现,在1.2 V电源电压下,输出202 mV的基准电压,在-40 ℃~130 ℃范围内的温度系数为6.5×10-5/℃,消耗2.46 μA电流。电源电压从1.1 V变化到3.6 V时,输出基准电压仅变化0.336 mV。该基准电路的电源电压抑制比(PSRR)在直流处达到-93 dB,10 MHz处达到-63 dB。设计了一种多路快速启动电路,只需13 μs即可完成启动。利用高阈值电压晶体管与普通阈值电压晶体管的V_th之差作为负温度系数电压源,使输出基准电压对工艺角不敏感。     

A Low-Voltage Fast Switching Frequency Synthesizer for FH-SS Applications

This brief presents a novel 2.7-V frequency synthesizer for frequency hopping spread spectrum applications. To accomplish fast switching, the frequency synthesizer utilizes a memory access technique to retrieve the precalibrated and digitized tuning voltage values. The phase noise and the frequency accuracy of the frequency synthesizer are analyzed. The channel efficiency, the frequency switching performance, and the output spectral purity are investigated at 2.4 GHz. Measurement shows that the channel switching time is 5 mus. Thus, the proposed synthesizer is promising for frequency hopping wireless communication. The developed architecture is ready to be used for application-specified integrated circuit design     

新型低电压能隙基准电压源

介绍了一种新型能隙基准电压源电路,此电路在smic 0.18 rfms工艺条件下设计,它可以输出大小为616mV的基准电压,只要当电源电压在1.1,2.5V之间,此基准电压的输出浮动不超过2.2mV.     

A Low-Voltage Fully Differential MOSFET-C Bandpass-Based Voltage-Controlled Oscillator for Frequency Tuning

A low-voltage fully differential MOSEFT-C bandpass-based voltage-controlled oscillator for the purpose of frequency-tuning of filters is proposed. This oscillator is guaranteed to start oscillating and provide well-controlled amplitude. Experimental filters and the filter tuning circuit are designed to demonstrate its use. The performance of this circuit is shown by experimental results.     

A Low-Voltage Fully Differential MOSFET-C Relaxation Voltage-Controlled Oscillator for Frequency Tuning

A low-voltage, fully differential MOSFET-C relaxation voltage-controlled oscillator for the frequency tuning of filters is proposed. The oscillator is capable of self-startup and provides well-controlled amplitude. The performance of this circuit is demonstrated by simulation results.     

一种用于升压型DC/DC变换器的低压带隙基准源

设计了一种应用于升压型DC/DC转换器芯片的高精度、低电压、低功耗带隙基准电压源,包含恒定电流的偏置电路、低压低功耗的运算放大器、三极管级联的带隙基准核心电路和低压启动电路四个部分。经过理论分析和仿真模拟,采用华虹NEC的5 V 0.35μm 1P4M工艺流片成功。电路实测结果为:输出电压Vout=1.2 V,温度系数12.5 ppm/℃,工作电压1.3~5 V,随电源电压的变化率为0.78 mV/V,3 V供电下功耗9μA。该带隙基准源可用于实际产品的批量生产。     

一种0.8 V低电源电压带隙基准电路的设计

提出了一种工作在低电源电压下的带隙基准电路。通过温度补偿电流的采集电路,突破了电阻分流式低压带隙基准[1]最低工作电压0.95 V的限制。基于SMIC 0.18μm工艺的Hspice仿真测试显示,电路的可靠工作电压最低可为0.8 V,且功耗仅为40μW,电源抑制比为69.5 dB@1 kHz;同时,在-20℃到100℃的温度范围内,输出电压的相关系数只有0.013 mV/K。     

跳频通信电台共址干扰及其抑制技术

分析了跳频通信电台共址干扰的形成原因以及共址干扰对跳频通信的影响,提出了解决跳频通信共址干扰的技术措施,为解决机载平台或车载平台配置多部跳频电台时的电磁兼容问题提供了参考.     

低压低功耗电流模CMOS带隙基准电路

提出了一种解决电流模带隙基准电路的第三简并态问题的处理方法,设计了一个完整的低压低功耗带隙电路.通过在电路启动时关断导致产生第三简并态的电流通道并监测电路关键节点电压的方法,控制电路的启动过程,使电路在启动时避开第三简并态,进入正常工作状态.HSPICE仿真结果显示,该电路的输出基准电压为793.6 mV,温度漂移系数可低达10 ppm/℃,电源电压大于1 V即可正常工作;在电源电压为1.5 V时,功耗小于5 μW.     

A Statistical Method for Reconfiguration of Cognitive Radios

Recent developments in computer technology have enabled radio developers to accomplish in software what traditionally was performed with application-specific integrated circuits. A radio that has the core of its functionality implemented in software is called a software-defined radio. When an SDR has the capability to sense, reason, and dynamically adapt to requirements and environmental change, we call this more capable device a cognitive radio. Many private and public agencies are investing in the promise of CR to improve the utilization of radio frequency spectrum. They envision devices that can sense frequency vacancies and dynamically reconfigure to utilize idle channels. The promise of CR depends on the capability of a radio to change operating frequencies, power, and/or modulation schemes (physical layer flexibility). In addition to this physical layer flexibility, there are a large number of opportunities to capitalize on the interplay of the CR physical layer configuration and other parameters in the radio network protocol stack. At the core of CR functionality is the ability to select from thousands of potential configurations to maximize performance-be it in terms of spectrum use, throughput, or reliability. In this article, we describe a method for selecting from a number of potential configurations to fulfill the communication requirements of a CR network. By using accepted statistical methods, we show how parameters at the physical, data link, network, and application layers interact to affect performance. We build upon this parametric insight with our presentation of a technique for predicting radio performance.     

Low-Voltage Flipped Voltage Follower Cell Based Current Mirrors for High Frequency Applications

Wireless Personal Communications - The paper proposes low-voltage current mirrors namely low-voltage current mirror (LVCM) and flipped voltage follower based low-voltage current mirror (FVFLVCM)...     

一种CMOS低压带隙基准电路的分析与设计

不同于常规电压求和带隙基准,电流求和是实现低压基准的主要方法.文章重点分析了一种负温度系数电流的生成方法,基于电流求和模式,设计了一种简单且无运放的电压基准结构,其输出最大基准值为1.1V,功耗为7μA.     

一种解决超短波电台同/近频相互干扰问题的方案

同一直升机上两部超短波电台在同频率或者近频率工作时,会引起严重的相互干扰,为了解决这一问题,根据电台的收发原理,通过分析找出了解决办法,并结合工程实际对一种电台进行了相应的结构改进.     

基于线性曲率校正技术的低电压带隙基准源设计

采用电流求和取代传统电压求和的方法设计了一款低基准电压输出的带隙基准电压源电路,同时提出一种线性化P-N结正向导通电压（VBE）的温度曲率校正技术,保证了基准电压的低温漂和高精度。整个电路采用TSMC0.6μmBCD工艺设计实现,芯片面积为0.2mm2。在Cadence环境下使用Spectre对电路进行了模拟仿真,仿真结果表明：该基准电路可在低至1.1V的电源电压下正常工作;在-20℃～120℃温度范围内,温度系数为9.1×10-6/℃,PSRR为-78dB。在典型的1.5V电源电压下,基准输出电压可调节范围为0.165～1.25V。