电沉积Ni—P非昌态合金的初期结构及形成机理

在典型的用于电沉积Ｎｉ－Ｐ非晶态合金的溶液中，于非晶碳膜上恒电位「－９０００ｍＶ（ＳＣＥ）电沉积ｌｓ后，发现有Ｎｉ的晶核形成，在相邻很近的Ｎｉ晶核之间沉积出Ｎｉ－Ｐ＝Ｓ非晶主不连非晶镀层，证明电 Ｎｉ－Ｐ合金初期态Ｎｉ的形成并非基体外延所致。     

电沉积Ni—P非晶态合金的初期结构及形成机理

在典型的用于电沉积Ｎｉ—Ｐ非晶态合金的溶液中，于非晶碳膜上恒电位［－９００ｍＶ（ＳＣＥ）］电沉积１ｓ后，发现有Ｎｉ的晶核形成，在相邻很近的Ｎｉ晶核之间沉积出Ｎｉ－Ｐ—Ｓ非晶核及不连续非晶镀层．证明电沉积Ｎｉ－Ｐ合金初期晶态Ｎｉ的形成并非基体外延所致．     

CVD金刚石形核的研究

在钢渗铬层和硅片上进行了化学气相沉积金刚石膜，发现在渗铬层上形成的金刚石膜以球形金刚石为主；用高倍扫描电子显微镜分析显示，渗铬层上的球形金刚石是由大量二次晶核长大的微晶金刚石和非晶碳组成。     

等离子体化学气相沉积类金刚石碳膜的特性及应用

类金刚石（DLC）膜是含有sp^3杂化态的亚稳态非晶碳膜，是具有极高的硬度、化学稳定性和光学透明性的半导体材料。这篇综述介绍了用等离子体化学气相沉积DLC膜的沉积方法、所制备薄膜的特性及应用，最后展望了DLC膜的发展趋势。     

CVD金刚石形核的研究

在钢渗铬层和硅片上进行了化学气相沉积金刚石膜,发现在渗铬层上形成的金刚石膜以球形金刚石为主;用高倍扫描电子显微镜分析显示,渗铬层上的球形金刚石是由大量二次晶核长大的微晶金刚石和非晶碳组成.     

类金刚石磁盘保护膜的性能、应用与制备

类金刚石膜在磁盘和读写磁头之上形成一层关键的保护膜.磁存储密度的飞速发展可以使存储密度上限达到1万亿字节/英寸2.这要求读写磁头距离磁盘更近,即需要一层仅1 nm～2 nm厚的类金刚石薄膜.四面体结构的非晶碳膜能够满足磁存储技术的要求,即形成原子尺度平滑、连续、致密,只有几个原子层厚的碳膜.磁过滤阴极弧方法、等离子体增强化学气相沉积方法可用来制备符合要求的超薄碳膜.     

硬质合金表面钴含量对金刚石形核密度的影响

对比分析了经金刚石磨盘研磨、脱钴／未脱钴ＹＧ８硬质合金上蒸镀非晶碳膜预处理对金刚石形核密度的影响。结果表明，未脱钴者，金刚石的形核密度低，金刚石结晶质量差，颗粒稀少，未成膜。原因是金刚石沉积过程中，基体内部的钴会扩散或蒸发到表面，产生明显聚集和长大。而经脱钴处理者，成核密度可达１０＾８ｃｍ＾－２，颗粒尺寸１～２μｍ，金刚石结晶质量好，刻面廓分明，表面基本成膜。     

氧气对MWPCVD制备金刚石膜的影响

在水冷反应室式微波等离子体气相沉积装置中以混合的CH4／H2／O2为反应气体,研究了O2浓度对制备金刚石膜的影响,实验发现,很低浓度的O2会显著促进金刚石的沉积,并稍稍抑制非晶C的沉积,因而沉积膜中非晶C的含量急剧下降;较高浓度的O2会同时抑制金刚石和非晶C的沉积,但由于抑制金刚石的作用更强烈,沉积膜中非晶C的含量反应有所升高,另外,O2的存在,有利于沉积颗粒较小的金刚石膜。     

液相电沉积类金刚石薄膜的组成及结构分析

利用液相电沉积的方法，从乙腈中在硅片上沉积非晶碳薄膜，首次发现了电流密度随反应时间呈波动变化的规律。红外光谱和拉曼光谱分析表明所得薄膜是一种典型的含氢类金刚石薄膜(a-C：H薄膜)，并用高斯分解的方法对非晶碳薄膜的拉曼光谱和X射线光电子能谱进行定量分析，从而确定这种a-C：H薄膜中sp^3的相对含量为30％～35％。     

类金刚石膜的电阻率及光吸收特性研究

一、引言类金刚石非晶碳膜具有硬度大、化学稳定、绝缘强度高、对红外光透明等优良特性,得到广泛的应用。人们使用等离子体、离子束和激光束等多种方法制备了类金刚石非晶碳膜。近年来人们对在电子器件方面的应用,特别是作为半导体材料的研究尤为     

Metal-doped diamond-like carbon films synthesized by filter-arc deposition

Diamond-like carbon (DLC) thin films are extensively utilized in the semiconductor, electric and cutting machine industries owing to their high hardness, high elastic modulus, low friction coefficients and high chemical stability. DLC films are prepared by ion beam-assisted deposition (BAD), sputter deposition, plasma-enhanced chemical vapor deposition (PECVD), cathodic arc evaporation (CAE), and filter arc deposition (FAD). The major drawbacks of these methods are the degraded hardness associated with the low sp³/sp² bonding ratio, the rough surface and poor adhesion caused by the presence of particles. In this study, a self-developed filter arc deposition (FAD) system was employed to prepare metal-containing DLC films with a low particle density. The relationships between the DLC film properties, such as film structure, surface morphology and mechanical behavior, with variation of substrate bias and target current, are examined. Experimental results demonstrate that FAD-DLC films have a lower ratio, suggesting that FAD-DLC films have a greater sp³ bonding than the CAE-DLC films. FAD-DLC films also exhibit a low friction coefficient of 0.14 and half of the number of surface particles as in the CAE-DLC films. Introducing a CrN interfacial layer between the substrate and the DLC films enables the magnetic field strength of the filter to be controlled to improve the adhesion and effectively eliminate the contaminating particles. Accordingly, the FAD system improves the tribological properties of the DLC films.     

脉冲磁过滤阴极弧等离子体制备四面体非晶碳膜

介绍了脉冲磁过滤阴极电弧法制备四面体非晶碳膜(tetrahedral amorphous carbon即ta-C),并对制得的薄膜表面形貌、硬度、电阻等进行了测试.结果表明,脉冲磁过滤阴极电弧法制备的ta-C膜有优良的性能.拉曼光谱分析显示,制得的薄膜为非晶结构,有明显的sp3结构特征,符合ta-C膜的特征峰.     

阴极真空弧源沉积氟化类金刚石薄膜的结构与性能研究

采用脉冲磁过滤阴极真空弧源沉积系统(FCVA)在单晶硅基片上制备了含氟量不同的一系列氟化类金刚石膜(a-C:F).重点研究了氟掺杂对非晶态碳基薄膜结构、机械性能和疏水性能的影响.薄膜的成分和结构采用X射线光电子能谱仪(XPS)和激光拉曼光谱(Raman)进行了表征,薄膜表面形貌和粗糙度采用原子力显微镜(AFM)进行了分析.使用纳米压痕仪测量了薄膜硬度,纳米划痕仪测量了膜基结合力.采用躺滴法测量薄膜与双蒸水之间的接触角来评价其疏水性能.结果表明,随着CF4流量的逐渐增加,薄膜的氟化程度逐渐增强,膜中最大氟含量达45.6 at%;薄膜呈典型的类金刚石状结构,但薄膜的无序化程度增强;由于-CFn+的刻蚀,薄膜表面更加致密化、粗糙度逐渐减小.薄膜的机械性能良好,硬度在12GPa以上.薄膜的疏水性能得到增强,与双蒸水之间的最大接触角达106°,接近于聚四氟乙烯(PTFE,110°).     

电绝缘用ta-C薄膜的微观结构与电学特性

采用ta—C薄膜用于SOI结构中的绝缘层，在高温高功率器件中有很大的应用潜力。应用真空磁过滤弧源沉积(FAD)的方法制备了ta—C薄膜。通过AFM、non—RBS、IR、I—V、C—V等方法对薄膜的表面形貌、微观结构和电学性能进行了研究。研究表明，ta—C薄膜的sp^3键含量高达87％，且具有很高的表面光洁度(粗糙度低于0．5nm)及较好的电绝缘性能，击穿场强达到4．7MV／cm。     

退火温度对a-C:H膜结构及摩擦学性能的影响

为研究环境温度对含氢无定形碳(a-C:H)膜结构和性能的影响,将a-C:H膜在大气环境中进行高温退火处理,并借助红外光谱、拉曼光谱、X射线光电子能谱、3D表面分析仪和球盘摩擦试验机等手段对退火前后a-C:H膜的结构、组成和性能进行了系统地考察.研究发现,在较低的退火温度下(300℃),a-C:H膜结构无明显变化,而其内应力降低,摩擦学性能显著提高;在400℃和500℃下退火,膜结构发生明显变化并伴随严重氧化,同时摩擦学性能降低甚至完全失效.结果表明,退火温度的选择对a-C:H膜的结构、组成及性能具有重要影响.     

类金刚石薄膜对轴承钢表面机械性能和滚动接触疲劳寿命的影响

使用等离子体浸没离子注入与沉积(PIII&D)技术在轴承钢基体表面合成类金刚石(DLC)薄膜,研究了薄膜的结构和性能,结果表明,所制备的DLC薄膜主要是由金刚石键(sp3)和石墨键(sp2)组成的混合无定形碳,且sp3键含量大于10%,DLC膜层致密均匀,与基体结合良好,DLC膜具有很高的硬度和杨氏模量,分别达到40 GPa和430 GPa;其最低摩擦系数由基体的0.87下降到0.2,被处理薄膜试件在90%置信区间下的L10、L50、La和平均寿命L较基体分别延长了10.1倍、4.2倍、3.5倍和3.4倍,PIII&D轴承钢滚动接触疲劳寿命的分散性得到了显著改善.     

阴极电弧法定向生长的铜纳米线上沉积非晶碳膜及其场发射特性

以阴极电弧法,分别于硅基材与铜纳米线(CuNWs)/硅基材(其中铜纳米线系阳极氧化铝(AAO)模板技术成长于硅基材上)沉积非晶碳膜,,分别以扫描电子显微镜(SEM)、原子力电子显微镜(AFM)和X光电子光谱仪(XPS)表征了非晶碳膜/铜纳米线/硅基材与非品碳膜/硅基材两者之表面形貌、粗糙度、结构及键结等物理特性.并比较两者之电子场发射特性.研究结果显示:两者都拥有低起始电场及高电流密度,其中非品碳膜/铜纳米线/硅基材的场发射起始电压为3.75 V/μm优于非品碳膜/硅基材的15 V/μm,因此非晶碳膜/铜纳米线/硅基材更适用于场发射平面显示器(FED)之发射子,可应用于高稳定性及低成本之场发射平面显示器之研发.     

Deposition of silicon doped and pure hydrogenated amorphous carbon coatings on quartz crystal microbalance sensors for protein adsorption studies

In this study hydrogenated amorphous carbon films (a-C:H) and silicon doped hydrogenated amorphous carbon films (a-C:H:Si) with different hydrogen and silicon contents were deposited onto sensors of a quartz crystal microbalance with dissipation detection (QCM-D). The resulting films were investigated with regard to their structural and elemental compositions using Raman spectroscopy, elastic recoil detection analysis and Rutherford backscattering spectroscopy. Furthermore the surface free energy (SFE) of the films was determined using contact angle measurements. The polar part of SFE of the a-C:H:Si films was found to be adjustable by the silicon content in these films and increased by increasing amounts of silicon. Carbon films with a broad range of chemical composition showed similar structure and properties when deposited on QCM-D sensors as compared with the deposition on silicon wafers. Subsequently, the amorphous carbon coated QCM-D sensors were used to study the adsorption of human serum albumin. These QCM-D results were related to the surface properties of the films.     

Microstructure and Mechanical Properties of Multilayer Ti(C,N) Films by Closed-field Unbalanced Magnetron Sputtering Ion Plating

Ti(C, N) multilayer films have been prepared by closed-field unbalanced magnetron sputtering technology and using graphite target as the C supplier. Microstructural observation results showed that the Ti(C, N) films exhibited multilayer structure with most of fine nano-columnar Ti(C, N) grains existing in the films. The current of graphite target had an effect remarkably on the multilayer structure of films: the periodical thickness gradually increased as the current went up, but the grain size of films gradually decreased and even amorphous phase appeared as the current further increased. The microstructure of Ti(C, N) films changed from columnar crystallite to nanocomposite in high current of graphite target where the fine Ti(C, N) grains were distributed uniformly in the amorphous Ti(C, N) matrix, and the volume fraction of the amorphous phase increased with increasing current. Measurement results showed that the Ti(C, N) multilayer films have high microhardness and low friction coefficient, and especially the film deposited in the current of 0.9 A exhibits superior properties with optimizing hardness and friction coefficient. Based on the relationship of the microstructure and the properties of films, the multilayer structure and fine grain size of Ti(C, N) films are responsible for their well mechanical and friction properties. And choosing the graphite target as the C supplier is more propitious to decrease the friction coe±cients of films.