A 150 MHz 0.6 μm BiCMOS superscalar microprocessor

An implementation of the Pentium microprocessor architecture in 0.6 μm BiCMOS technology is described. Power dissipation is reduced and performance is enhanced over the previous generation. Processor features, implementation technology, and circuit techniques are discussed. An internal clock rate of 150 MHz is achieved at 3.7 V and -55°C     

A 200 MHz quadrature digital synthesizer/mixer in 0.8 μm CMOS

A 200 MHz quadrature direct digital frequency synthesizer/complex mixer (QDDFSM) chip is presented. The chip synthesizes 12 b sine and cosine waveforms with a spectral purity of -84.3 dBc. The frequency resolution is 0.047 Hz with a corresponding switching speed of 5 ns and a tuning latency of 14 clock cycles. The chip is also capable of frequency, phase, and quadrature amplitude modulation. These modulation capabilities operate up to the maximum clocking frequency. The chip provides the capability of parallel operation of multiple chips with throughputs up to 800 MHz. The 0.8 μm triple level metal N-well CMOS chip has a complexity of 52000 transistors with a core area of 2.6×6.1 mm². Power dissipation is 2 W at 200 MHz and 5 V     

用O.8μm工艺技术设计的65-kb BiCMOS SRAM

设计了一种65-kb BiCMOS静态随机存取存储器(SRAM)的存储单元及其外围电路,提出了采用先进的0.8μm BiCMOS工艺,制作所设计SRAM的一些技术要点.实验结果表明,所设计的BiCMOSSRAM,其电源电压可低于3V,它既保留了CMOS SRAM低功耗、高集成密度的长处,又获得了双极型(BiDolar)电路快速、大电流驱动能力的优点,因此,特别适用于高速缓冲静态存储系统和便携式数字电子设备中.     

350 MHz opamp-RC filter in 0.18 μm CMOS

A 350 MHz fifth-order elliptic opamp-RC filter demonstrates that opamp-based filters need not have bandwidth disadvantages compared to transconductor-based filters. The filter, fabricated in standard digital 0.18 μm CMOS with 1.8 V V_DD, achieves 0.5 Vp-p signal swing at -40 dB THD     

Dark-line-resistant, aluminum-free diode laser at 0.8 μm

Quantum-well, lattice-matched InGaAsP lasers emitting at 0.8 μm are shown to exhibit resistance to 〈100〉 dark-line growth. This property in conjunction with the aluminum-free device structure augurs well for future high-power diodes and arrays operating near this wavelength     

Bistable operation of 0.8 μm GaInAsP/GaAs lasers

Quaternary GaInAsP prepared on GaAs is a very promising material for optoelectronic devices in alternating AlGaAs/GaAs systems. The authors report bistable operation in stripe geometry GaInAsP/GaAs DH lasers with gain region and absorbing region in the laser resonator. A hysteresis loop is observed in the I/L curve under pulsed operation at room temperature     

A scaled, high-performance (4.5 fJ) bipolar device in a 0.35 μmhigh-density BiCMOS SRAM technology

We present the performance improvements obtained both by scaling the Selectively Compensated Collector (SCC) BJT and by using a modified Current-Mode Logic (CML) gate configuration. Scaling the perimeter parameter by using the (tighter) bitcell design rules results in a ~30% reduction in parasitic capacitances, and a 23% lower power-delay product; reducing it from 48 fJ to 37 fJ. The greatest return comes from using a modified CML gate, which has an n-MOS current source. At a supply voltage of 1.1 V, and at 40 μA switching current, the minimum power-delay product of this CML gate is a silicon-substrate bipolar record 4.5 fJ     

A 300 MHz digital double-sideband to single-sideband converter in 1μm CMOS

A 43-tap FIR Hilbert transform digital filter chip is described which implements both a double-sideband (DSB) to single-sideband (SSB) conversion with a decimation-by-2 and the converse operation of a SSB to DSB conversion with an interpolation-by-2. Over 70 dB of image rejection is achieved by the Hilbert transform filter. The 3.57×7.07 mm², 45 000 transistor chip was fabricated in a 1 μm N-well CMOS process and operates at sample rates in excess of 300 MHz     

BiCMOS technology with 60 GHz n-p-n bipolar and 0.25 μm CMOS

A BiCMOS technology has been developed that integrates a high-performance self-aligned double-polysilicon bipolar device into an advanced 0.25 μm CMOS process. The process sequence has been tailored to allow maximum flexibility in the bipolar device design without perturbation of the CMOS device parameters. Thus, n-p-n cutoff frequencies as high as 60 GHz were achieved while maintaining a CMOS ring oscillator delay per stage of about 54 ps at 2.5 V supply comparable to the performance in the CMOs-only technology. BiCMOS and BiNMOS circuits were also fabricated. BiNMOS circuits exhibited ≈45% delay improvement compared to CMOS-only circuits under high load conditions at 2.5 V     

A 500 MHz, 32 bit, 0.4 μm CMOS RISC processor

A 500 MHz, 32 bit RISC microprocessor has been experimentally developed using an 8-stage pipelined architecture and high-speed circuits, including a 500 MHz 1 kilobyte double-stage pipelined cache, a 1.8 ns register file, a double-stage binary look-ahead carry (BLC) adder circuit, and a 500 MHz phase locked loop (PLL) frequency multiplier. Newly developed circuit-integrating techniques include a stacked power-line structure, which serves as a noise shield and also provides low bounce, a low voltage-swing interface circuit with on-chip adjustable termination resistors, a small-skew clock distribution method, and a clock synchronization circuit which provides small-skew clock among LSI chips. About 200000 transistors are integrated into a 7.90 mm×8.84 mm die area with 0.4 μm CMOS fabrication technology. Power dissipation is 6 W at a 500 MHz operation and 3.3 V supply voltage     

Embedded HIMOS(R) flash memory in 0.35 μm and 0.25 μm CMOStechnologies

In this paper, the performance and reliability characteristics of the 0.35 μm/0.25 μm High Injection MOS (HIMIOS(R)) technology is described in detail. This flash EEPROM technology relies on source-side injection for programming and Fowler-Nordheim tunneling for erasing, and has been successfully implemented in a 1 Mbit memory array embedded in a 0.35 μm CMOS technology, adding only about 30% to the processing cost of digital CMOS. Due to its triple gate structure, the HIMOS(R) cell exhibits a high degree of flexibility and scalability. A fast programming operation (10 μs) at 3.3 V supply voltage is combined with an endurance of well over 100000 program/erase cycles, immunity to all possible disturb effects and a retention time that largely exceeds 100 years at 125°C. Furthermore, the cell has been scaled to a 0.25 μm version, which is a laterally scaled version with the same operating voltages and tunnel oxide thickness. The use of secondary impact ionization is investigated as well and proves to be very promising for future generations when the supply voltage is scaled below 2.5 V     

2 GHz controlled current conveyor in standard 0.8 μm BiCMOStechnology

A new controlled current conveyor operating in class A and implemented using a low-cost industrial BiCMOS 0.8 μm process is described. Its electrical characteristics (voltage and current transfers, parasitic impedances) have been measured. With a bias current of 500 μA and supplied under ±2.2 V, the measurement results show that the circuit exhibits very large -3 dB bandwidths: from DC to 4.5 GHz for the voltage transfer (between Y and X) and from DC to 2 GHz for the current transfer (between X and Z)     

7.35 GHz PLL frequency synthesiser in 0.8 μm silicon bipolarproduction technology

A 7.35 GHz phase-locked loop frequency synthesiser in a low-cost 0.8 μm/25 GHz silicon bipolar production technology (B6HF) is presented. The synthesiser offers a tuning range from 7.23 to 7.35 GHz at the supply voltage of 3 V, and phase-noise performance of -100.7 dBc/Hz at 100 kHz offset from the carrier     

A novel memory cell for multiport RAM on 0.5 μm CMOSSea-of-Gates

A novel memory cell circuit for multiport RAM on CMOS Sea-of-Gates (SOG) has been proposed. It contributes to the operation both at high speed and at low voltage. In addition, a fourfold read bit line technique is also proposed to reduce the access time. A multiport RAM generator with the novel memory cell has been developed. 2-port or 3-port RAM's with flexible bit-word configurations are available. Test chips containing seven generated RAM's were designed and fabricated on 0.5 μm CMOS SOG. The experimental results of the chip show that each RAM operates at over 1.4 V and that the address access time of the 3-port RAM (16b×256w) is 4.8 ns at 3.3 V     

A 100-MHz 64-tap FIR digital filter in 0.8-μm BiCMOS gate array

A 64-tap FIR (finite impulse response) digital filter that has been designed using a newly developed filter compiler and fabricated in a 0.8-μm triple-level interconnect BiCMOS gate array technology is presented. The filter has been tested and is fully functional at a 100-MHz clock rate. These results are obtained by combining an optimized architecture and gate array floorplan with submicrometer BiCMOS technology. The filter occupies 49 mm², which is approximately two-thirds of the 100 K gate array core. The design uses an equivalent of 55 K gates (two-input NAND gates). The device input/output are 100 K emitter-coupled-logic (ECL) compatible     

20 W CW surface emitting 0.8 μm GaAs/GaAlAs laser diodes

A continuous-wave optical power density of 200 W/cm² is reported for the first time for a 0.1 cm² element of a surface emitting GaAs/GaAlAs wafer. The laser facets are cleaved on-wafer by a microcleavage technique. The output optical beam is reflected by 45°-integrated beam deflectors situated at a distance of 15 μm from each laser facet. The lasers were soldered junction-up on a microchannel CuW cooler. The drive current at 20 W CW is 40 A with a slope efficiency of 0.7 W/A     

A 4-ns 4K×1-bit two-port BiCMOS SRAM

The authors introduce a two-port BiCMOS static random-access memory (SRAM) cell that combines ECL-level word-line voltage swings and emitter-follower bit-line coupling with a static CMOS latch for data storage. With this cell, referred to as a CMOS storage emitter access cell, it is possible to achieve access times comparable to those of high-speed bipolar SRAMs while preserving the high density and low power of CMOS memory arrays. The memory can be read and written simultaneously and is therefore well-suited to applications such as high-speed caches and video memories. A read access time of 3.8 ns at a power dissipation of 520 mW has been achieved in an experimental 4K×1-bit two-port memory integrated in a 1.5-μm 5-GHz BiCMOS technology. The access time in this prototype design is nearly temperature-insensitive, increasing to only 4 ns at a case temperature of 100°C     

A 0.8-μm BiCMOS ATM switch on an 800 Mb/s asynchronous bufferedbanyan network

An experimental element switch LSI for asynchronous transfer mode (ATM) switching systems was realized using 0.8-μm BiCMOS technology. The element switch transfers cells asynchronously when used in a buffered banyan network. Three key features of the element switch architecture are CASO buffers to increase the throughput, a synchronization technique called SCDB (synchronization in a clocked dual port buffer) to make possible asynchronous cell transmission on the element switches with simple hardware, and an implementation technique for virtual cut through, called CELL-BYPASS, which lowers the latency. An implementation of elastic store is proposed to achieve high-speed synchronization with simple hardware. The element switch LSI adopts an emitter-coupled-logic (ECL) interface. The maximum operation frequency of the element switch LSI is 200 MHz (typical)     

Efficient operation of an Yb-sensitised Er fibre laser pumped in0.8 μm region

The dependence of threshold and slope efficiency on pump wavelength around 0.8 μm has been investigated for an Yb-sensitised fibre laser. Results confirm a wider choice of pump wavelength compared with unsensitised Er fibre. A 5 mW threshold and slope efficiency of 8.5% were observed for 820-830 nm pumping     

Noncontact internal waveform measurements with picosecond timeresolution on a 0.5- μm CMOS SRAM

Waveform measurements at the internal nodes of a 0.5- μm CMOS SRAM (static random-access memory), performed at room temperature and at low temperature (80 K), are presented. These measurements yield detailed information on the internal operation of the circuit, and, more precisely, on the delays whose sum constitutes the access time in this high-speed memory circuit. The waveforms are measured in a noncontact, nonintrusive fashion with a recently developed ultrafast electron-beam prober, the picosecond photoelectron scanning electron microscope