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含硅双马来酰亚胺的结构与性能研究 总被引:3,自引:1,他引:3
前文(1)-合成了三种新型的含硅双马来酰亚胺单体,本文采用DSC,DTA,IR研究了含硅双马来酰亚胺的固化反应,用TGA研究了含硅双马来酰亚固体树脂的热稳定性,并且对含硅双马来酰亚胺单体的溶解性及固化树脂的玻璃化转变进行了考察。研究结果表明,含硅双马来酰亚胺Ⅰ,Ⅱ,Ⅲ的固化反应表观活化能分别为:Ⅰ60.34kJ/mol,Ⅱ36.61kJ/mol及Ⅲ80.33kJ/mol,固化树脂的耐热温度指数分别 相似文献
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前文-合成了三种新型的含硅双马来酰亚胺单体,本文采用DSC、DTA、IR研究了含硅双马来酰亚胺的固化反应,用TGA研究了含硅双马来酰亚胺固体树脂的热稳定性,并且对含硅双马来酰亚胺单体的溶解性及固化树脂的玻璃化转变进行了考察。研究结果表明,含硅双马来酰亚胺Ⅰ、Ⅱ、Ⅲ的固化反应表观活化能分别为:Ⅰ 60.34kJ/mol,Ⅱ 36.6kJ/mol及Ⅲ 80.33kJ/mol,固化树脂的耐热温度指数分别为:Ⅰ 248.9℃,Ⅱ 247.1℃,Ⅲ 253.5℃。与二苯甲烷双马来酰亚胺相对照,三种单体的固化反应活性顺序为:Ⅱ>Ⅰ>二苯甲烷双马来酰亚胺>Ⅲ,溶解性大小顺序为:Ⅱ>Ⅰ>Ⅲ>二苯甲烷双马来酰亚胺,固化树脂的耐热温度指数大小顺序为:Ⅲ>Ⅱ>Ⅰ>二苯甲烷双马来酰亚胺。研究结果证实,含硅双马来酰亚胺的性能与分子结构有着密切的关系。 相似文献
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本文以双马来酰亚胺为主要原料,采用高活性扩链剂和新型烯类单体与双马来酰亚胺进行扩链共聚反应,制得了一种既耐高温又有一定韧性的有溶剂电绝缘浸渍漆。通过TGA,DSC和等温热失重分析,研究了浸渍漆的热稳定性和固化行为。试验结果表明,浸渍漆的成膜性能优良,储存稳定性好,经60℃,96h存放后,粘度增长率为3。75%,室温存放一年以上,粘度变化很小,而且仍可制得光亮均匀的漆膜,由TGA测试数据计算其耐热温 相似文献
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云母带用环氧双马来酰亚胺体系粘合剂固化反应的研究 总被引:1,自引:0,他引:1
本文采用红外光谱及DSC等手段,进一步研究了环氧-桐油酸酐-双马来酰亚胺体系的固化反应中双来酰亚胺的作用,认为双马来酰亚胺并未与环氧共聚,而主要是自聚,此外双马来酰亚胺可与桐油酸酐中双键发生共聚,双马来酰亚胺中残留的未闭环的羧基也可能和环氧反应。 相似文献
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本文采用红外光谱及DSC等手段,进一步研究了环氧-桐油酸酐-双马来酰亚胺体系的固化反应中双来酰亚胺的作用,认为双马来酰亚胺并未与环氧共聚,而主要是自聚。此外双马来酰亚胺可与桐油酸酐中双键发生共聚,双马来酰亚胺中残留的未闭环的羧基也可能和环氧反应。 相似文献
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以1,2-双(4-氨基苯氧基)乙烷和1,6-己二胺为原料,在以乙酸酐为脱水剂和乙酸钠或乙酸镍为催化剂的共同作用下,分别与顺丁烯二酸酐(MA)反应,合成出了一种新型双马来酰亚胺1,2-双(4-马来酰亚胺基苯氧基)乙烷和一种高产率双马来酰亚胺1,6-双马来酰亚胺基己烷,利用重结晶方法提纯,并对其单体结构采用红外光谱(FT-IR)、核磁共振氢谱(1H-NMR)、质谱(MS)等方法进行表征,测试了两种双马来酰亚胺的溶解性。结果表明:两种BMI由于分别引入柔性链节醚键和脂肪链,使其具有良好的溶解性,室温下可溶于丙酮和四氢呋喃中,具有良好的加工性能。 相似文献
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以季戊四醇和甲基丙烯酸为原料,制备具有多支链结构的不饱和羧酸酯,再与P(VDF-HFP)共混,经热聚合制备锂离子电池用凝胶聚合物电解质,用红外光谱、循环伏安、X射线衍射、交流阻抗等研究电解质的性质。结果表明,用该多支链羧酸酯制备聚合物电解质时,单体用量少,获得的凝胶粘性好,室温离子电导率为1.03 mS/cm,电化学稳定窗口达到5.2 V,以此制备的聚合物电池界面阻抗小,放电性能好。 相似文献
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Kushch N.D. Nazheva O.N. Gritsenko V.V. Buravov L.I. Dyachenko O.A. Van K.V. 《Dielectrics and Electrical Insulation, IEEE Transactions on》2001,8(3):429-431
A new radical cation salt (ET)5Dy(NCS)6No 3.C2H5OH based on a complex dysprosium anion was prepared by electrochemical oxidation of bis (ethylenedithio)tetrathiafulvalene (ET) in a chlorobenzene-ethanol solution. Its crystal structure and conducting properties were studied. The salt has a layered crystal structure with a new type of packing of the radical cation layer, which is called ω type. Its electrical properties show that this salt is a semiconductor 相似文献
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In the multitude of semiconductors today, there are only a few which stand out due to their unique properties. Gallium arsenide (GaAs) is one. It is a compound III-V semiconductor made up of gallium (a group V element with an orthorhombic crystal structure) and arsenic (a group III element with a trigonal crystal structure). The unique property that gallium arsenide has is its ability to turn electricity into light. This property allows the semiconductor to be used in an array of applications, ranging from integrated circuits to photovoltaic applications. In this paper, the application of GaAs to solar cell panels is detailed by the author 相似文献
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现有的光学电压传感器多基于光功率检测模式,其测量范围与测量灵敏度受到电光晶体半波电压的限制。纵向调制的多片晶体叠层结构可以解决半波电压限制的问题,但仅适用于1 000 kV电压等级。此外,仿真结果表明这一结构中晶体内的电场分布极不均匀,受震动与热胀冷缩等因素的影响,光路或晶体的相互位置易产生偏移而引入积分电压误差。文中以110 kV电压等级为例,对多片晶体叠层结构进行了改进,简化了传感系统的结构,并将MgTiO3陶瓷按照一定的要求安装在锗酸铋(BGO)晶体的外部以改善晶体的内电场分布,可以把积分电压误差从0.275%降低至0.01%以下。改进后的结构可用于各种电压等级。最后,通过实验验证了新方法的有效性。 相似文献
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Shinichiro Hayashi Satoshi Sofue Shinzo Yoshikado 《Electrical Engineering in Japan》2002,139(3):18-25
Lanthanum chromium oxide (LaCrO3) has excellent high‐temperature properties. LaCrO3 doped with alkaline earth metals also has high electric conductivity. The purpose of this study is to fabricate thin film heaters using LaCrO3 doped with Ca by RF magnetron sputtering method. The crystal structure of thin films was evaluated and the surface form was studied. The results show that the thin film deposited on Si(100) single crystal and quartz glass substrates in Ar gas had a strong orientation and that its surface form was comparatively smooth. The crystal structure of the thin films deposited on Si(100) and quartz glass substrate at temperatures of 700 and 800 °C by sputtering in a mixture of Ar and O2 gases was the same as the crystal structure of LaCrO3. The heating characteristics of a thin film heater on Si(100) substrate with Pt electrodes were evaluated by measurement of the equilibrium temperature‐current (T–I) and resistance‐equilibrium temperature (R–T) characteristics. The maximum equilibrium heating temperature was about 1100 °C. © 2002 Wiley Periodicals, Inc. Electr Eng Jpn, 139(3): 18–25, 2002; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.1156 相似文献
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