Microstructure and dielectric relaxor behavior of Ba(Zr0.2Ti0.8)O3–(Ba0.7Ca0.3)TiO3–BaBi4Ti4O15 ceramics by tape casting

Plate-like BaBi₄Ti₄O₁₅ powders were used to fabricate 0.952[Ba(Zr_0.2Ti_0.8)O₃–(Ba_0.7Ca_0.3)TiO₃]–0.048BaBi₄Ti₄O₁₅(abbr. BZCT-BBT) ceramics by tape casting. The microstructure and dielectric relaxor behaviors of BZCT-BBT ceramics were investigated. BZCT-BBT ceramics can be sintered well at 1,100?°C and mainly consisted of tetragonal perovskite phase and BaBi₄Ti₄O₁₅ (abbr. BBT) phase. The lattice constants decrease as the sintering temperature increases due to substitution of Bi³⁺ for the A-site atoms of the perovskite structure. There is no obvious difference between the structure in the perpendicular and parallel directions, however, an evident difference of dielectric properties in the two directions is observed. Comparing with Ba(Zr_0.2Ti_0.8)O₃–(Ba_0.7Ca_0.3)TiO₃(abbr. BZCT) ceramics, BZCT-BBT ceramics show obvious relaxor characteristics which are evidenced by the degree of diffuseness γ calculated using the modified Curie–Weiss law. Meanwhile, the addition of BBT decreases T_m, which results from the decrease of grain size. The reduction of ε_m is mainly caused by phase structure deviation from the coexisting rhombohedral and tetragonal structure to single tetragonal.     

Fabrication and electrical properties of textured Ba(Zr0.2Ti0.8)O3–(Ba0.7Ca0.3)TiO3 ceramics using plate-like BaTiO3 particles as templates

Plate-like BaTiO₃ (BT) particles were used as templates to fabricate grain-oriented Ba(Zr_0.2Ti_0.8)O₃–(Ba_0.7Ca_0.3)TiO₃ (BZT–BCT) ceramics. The effects of the sintering temperature and the soaking time on the microstructure and electrical properties of the textured BZT–BCT ceramics were investigated. The results show that textured ceramics were obtained with orientation factor better than 0.5. The textured BZT–BCT ceramics have rhombohedral and tetragonal structures. Terrace morphology can be observed in the grains and the mechanism of grain growth is multi-nucleation multilayer growth. The T_R–T and T_C of BZT–BCT ceramics shift to higher temperature as the soaking time increases. Textured structures improve the dielectric, piezoelectric properties, and weaken the dielectric relaxor characteristics. When BZT–BCT ceramics sintered at 1,500 °C for 20 h, the maximum piezoelectric coefficient of 350 pC/N can be obtained.     

Ferroelectric-to-non-ergodic relaxor phase transition of (Bi0.5Na0.3K0.2) TiO3– (Ba0.8Ca0.2) TiO3 lead-free ceramics by SrTiO3 effect

In this work, a series compositions of [(0.95?x)(Bi_0.5Na_0.3K_0.2)TiO₃–xSrTiO₃–0.05(Ba_0.8Ca_0.2) TiO₃] Pb-free ceramics (0.0?≤?x?≤?0.2) abbreviation (BKNT–ST–BCT) were synthesized by conventional sintering method. Effect of ST addition on the crystal structure, domain structure, dielectric and ferroelectric properties were investigated. The crystal structure was monitored by XRD and the patterns shown phase crossover from tetragonal to pseudo-cubic caused by lower crystal symmetry of lattice effect at high content of ST. Morphology of sintered ceramics were characterized by SEM, while the domain structure of ST?=?0.0 at different temperatures was examined by In situ TEM. Diffused phase transition corresponding to ferroelectric to ergodic relaxor at lower T has been observed at depolarization temperature (T_d) at (ST < 0.15), while the permittivity peak which detected at ST?=?0.2 in whole range of temperature denote non-ergodic relaxor to paraelectric phase transition. All compositions show normal ferroelectric (P–E) loop at room temperature even ST?=?0.2 with low coercive field (E_c?~?15 kV/cm), while slim relaxor (P–E) loop was observed at (T?=?200 °C). Present normal ferroelectric properties of ST?=?0.2 are attributed to the domain growth and domain wall displacement above the domain switching electric field. All samples belonging to (x?≤?0.1) shown current peak corresponding to ferroelectric phase transition at domain switching field. Samples belonging to (x?≥?0.15) shown two nominal peaks where the second peak is corresponding to ferroelectric-to-another ferroelectric phase transition with different crystal symmetry.

     

Ba(Zr0.3Ti0.7)O3 doping to enhance the dielectric and energy discharging performances of a 0.65Bi0.5Na0.5TiO3–0.35Sr0.7Bi0.2TiO3 lead-free ceramic

Journal of Materials Science: Materials in Electronics - A group of lead-free (1&nbsp;?&nbsp;x)(0.65Bi0.5Na0.5TiO3–0.35Sr0.7Bi0.2TiO3)–x[Ba(Zr0.3Ti0.7) O3]...     

Dielectric properties of sol–gel synthesized SrTiO3/(Ba0.7Sr0.3)TiO3 and SrTiO3/Ba(Zr0.3Ti0.7)O3 thin film heterostructures

The paper presents synthesis of Ba_0.7Sr_0.3TiO₃ (BST), BaZr_0.3Ti_0.7O₃ (BZT) and SrTiO₃ (ST) thin films and their heterostructures using modified Pechini method. The La_0.7Sr_0.3MnO₃ has been used as a conducting bottom layer to form metal ferroelectric metal capacitor. The thin films are spin coated on SiO₂/n-Si(100) substrates. The thin films thus deposited are characterized for crystal structure, morphology, dielectric, complex impedance and admittance properties. Deposition of surface layer ST is observed to reduce loss tangent tan δ of BST and BZT thin films, still maintaining equivalent magnitude of figure of merit γ. The results on dielectric properties are analyzed in terms of the Maxwell–Wagner model and Koop’s phenomenological theory.     

Microstructure and microwave dielectric properties of xSm(Mg0.5Ti0.5)O3–(1 − x)Ca0.8Sr0.2TiO3 ceramics

xSm(Mg_0.5Ti_0.5)O₃–(1 ? x)Ca_0.8Sr_0.2TiO₃ (x = 0.50–0.95) ceramics are prepared by a conventional solid-state ceramic route. The microstructure and microwave dielectric properties are investigated as a function of the x-value and sintering temperature. The single phase solid solutions were obtained throughout the studied compositional range. The variation of bulk density and dielectric properties are related with the x-value. Increasing sintering temperature can effectively promote the densification and dielectric properties of xSm(Mg_0.5Ti_0.5)O₃–(1 ? x)Ca_0.8Sr_0.2TiO₃ ceramic system. With the content of Sm(Mg_0.5Ti_0.5)O₃ increasing, the temperature coefficient of resonant frequency τ _f value decreased, and a near-zero τ _f could be obtained for the samples with x = 0.80. The optimal microwave dielectric properties with a dielectric constant ε _r of 30.1, Q × f of 115,000 GHz (at 8.0 GHz), and τ _f of 8.9 ppm/°C were obtained for 0.80Sm(Mg_0.5Ti_0.5)O₃–0.20Ca_0.8Sr_0.2TiO₃ sintered at 1,550 °C for 3 h, which showed high density and well-developed grain growth.     

Ferroelectric Films of Ba0.7–0.8Sr0.2–0.3TiO3 Solid Solutions Deposited from Carboxylate Solutions

Ferroelectric films of Ba_0.7–0.8Sr_0.2–0.3TiO₃ solid solutions 2–3 m in thickness were deposited onto platinum substrates from carboxylate solutions and characterized by dielectric measurements at 1000 Hz: t _C = 15–16°C, ₂₀ > 1000, tan = 0.04–0.06 in the range 10–100°C. The controllability coefficient of the films in a dc electric field between 36 and 42°C is 1.6.     

Origin of the large strain response in tenary SrTi0.8Zr0.2O3 modified Bi0.5Na0.5TiO3–Bi0.5K0.5TiO3 lead-free piezoceramics

The perovskite oxides (1 ? x)Bi_0.5(Na_0.9K_0.1)_0.5TiO₃–xSrTi_0.8Zr_0.2O₃ (SZT1000x, x = 0, 0.2, 0.4, 0.6, 0.8, and 1 %) were prepared via the conventional solid-state reaction method. The room temperature ferroelectric P–E loops coordinate with polarization current density J–E curves illustrated the changes of ferroelectric domains and polar nanoregions under different driving fields exhaustively. The composition and electric field dependent strain behavior of this system were investigated to develop a lead-free piezoelectric material with a large strain response at a lower electric field. A large strain of 0.44 % (S _max/E _max = 744 pm/V) at an applied field of 50 kV/cm was obtained at the composition of 0.6 mol% SZT. Temperature-dependent hysteresis measurements reveal the primary origin of the large strain is due to the presence of a nonpolar phase at a zero field. Upon the application of an electric field, the nonpolar phase that can easily transform into a long-range ferroelectric phase, and then brings the system back to its unpoled state once the applied electric field is removed. Notably, the electric field required to deliver large strains is reduced to 40 kV/cm while the S _max/E _max reached up to 717 pm/V, indicating that the developed material is highly promising for actuator applications.     

The electrostrictive effect and dielectric properties of lead-free 0.5Ba(ZrxTi1−x)O3–0.5(Ba0.75Ca0.25)TiO3 ceramics

Lead-free 0.5Ba(Zr_xTi_1?x)O₃–0.5(Ba_0.75Ca_0.25)TiO₃ (x = 0.25, 0.30, 0.35, 0.40) ceramics have been synthesized by a conventional solid state sintering method. The room temperature ferroelectric and electrostrictive properties of these ceramics were studied. Based on the measured properties, these ceramics showed a typical relaxor behavior. The Curie temperature of BZT–BCT ceramics decreases with increasing the Zr content. The largest electrostrictive strain and electrostrictive coefficient are founded in BZT–BCT ceramic with x = 0.25, the value is 0.16 % and 0.079 m⁴ C^?2, respectively. The polarization, electrostrictive strain and electrostrictive coefficient (Q ₁₁) decrease with increase in Zr concentration. For samples with low Curie temperature, which have large room temperature dielectric constant (ε), electrostrictive coefficient increases (Q ₁₁) is smaller. Because doping can disrupt the long range cation order, and electrostrictive (Q ₁₁) coefficient increases with cation order from disordered, through partially-ordered, simple relaxor and then ordered perovskites, ferroelectrics with a disordered structure have a huge permittivity, but a small electrostrictive coefficient (Q ₁₁).     

Magnetoelectric properties of Ba0.8Sr0.2TiO3–CoFe2O4 multilayered composite film via sol–gel method

Ba_0.8Sr_0.2TiO₃–CoFe₂O₄ (BST–CFO) multilayered composite films were prepared on Pt/Ti/SiO₂/Si substrates via a sol–gel method and spin-coating technique. Microstructures, electric property, magnetic property and magnetoelectric (ME) property of the composites were studied. Results show that the composite films calcined at 750 °C have BST and CFO phases and no obvious impurity phases were detected. Further, the composite films exhibit layered structures and a transition layer which is composed of interfacial delamination exists at the interface between BST and CFO layers. Ferroelectric and ferromagnetic properties were simultaneously observed in the films, evidencing the coexistence of the ferroelectric and ferromagnetic properties. Furthermore, the saturation magnetization value of the composite film is lower than that of the pure CFO film derived by the same processing as a result of the effect of the nonferromagnetic BST layers. Also, ferroelectric hysteresis loops reveal that the saturated polarization and remanent polarization of the composite film are lower than those of the pure BST films. In addition, the composite film exhibits a strong ME effect, which makes the composite film attractive for technological applications as devices.     

Temperature stable microwave dielectric ceramic 0.3Li2TiO3–0.7Li(Zn0.5Ti1.5)O4 with ultra-low dielectric loss

In the present work, the 0.3Li₂TiO₃–0.7Li(Zn_0.5Ti_1.5)O₄ ceramic was prepared via the conventional solid state reaction route, and the phase composition, microstructure, and sintering behavior were investigated. The ceramic sample sintered at 1100 °C for 2 h demonstrated high microwave dielectric performance with a relative permittivity of 23.5, a high quality factor (Qf) ~ 88,360 GHz (at 7.4 GHz), and near zero temperature coefficient of resonant frequency about ? 0.8 ppm/°C. These results indicate that the 0.3Li₂TiO₃–0.7Li(Zn_0.5Ti_1.5)O₄ ceramic might be a good candidate for dielectric resonators, filters and other microwave electronic device applications.     

Modeling of room temperature resistivity and grain size for polycrystalline (Ba0.8−xSr0.2)YxTO3 by response surface method

The effect of yttrium content and heat-treatment processes on the room temperature resistivity and grain size of polycrystalline (Ba_0.8–xSr_0.2)Y_xTO₃ ceramics has been systematically studied using response surface method. The yttrium content, sintering temperature and cooling rate were taken as experimental factors. The modeling equations for the room temperature resistivity and grain size were obtained by using three experimental factors and measured values of the room temperature resistivity and grain size. The yttrium content has larger effect than other experimental factors on the room temperature resistivity and grain size. The validity of polynomial equations was confirmed by comparing the predicted values with those obtained from additional experiments.     

La0.7Sr0.3MnO3-Pb(Zr,Ti)O3双层膜中的磁电(ME)效应

由溶胶-凝胶法制备出锰酸盐La0.7Sr0.3MnO3粉料,经1300K热压并在1573K高温下烧结成块材,并与Pb(Zr,Ti)O3胶合形成弹性耦合双层膜.相较于涂敷膜(tape casting)复合样品,该双层膜显示出更为优良的ME耦合效应.横向耦合要比纵向耦合更为强烈,并当外加磁场为150 Oe时ME电压系数达到峰值.分析表明由磁场和频率变化导致的ME系数变化的实验值与理论值符合的很好.     

Effect of sintering temperature on phase structure, microstructure, and electrical properties of (K0.5Na0.5)NbO3–(Ba0.6Sr0.4)0.7Bi0.2TiO3 lead-free ceramics

Lead-free 0.98(K_0.5Na_0.5)NbO₃–0.02(Ba_0.6Sr_0.4)_0.7Bi_0.2TiO₃ (abbreviated as 0.98KNN–0.02BSBT) ceramics were prepared by the conventional solid-state sintering method. Effect of sintering temperature on 0.98KNN–0.02BSBT ceramics was systematically investigated. The frequency dependent dielectric permittivities show that the ceramics sintered at different temperatures are indeed “relaxor-like” ferroelectric ceramics, which possess a diffuse phase transition without a strong frequency dispersion of dielectric permittivity. The diffuseness parameter γ, the comparison of the relaxor behavior based on empirical parameters (ΔT _diffuse) and the slimmer P–E hysteresis loops confirm that the “relaxor-like” characteristics of the ceramics are strengthened with increasing sintering temperature. At the optimum sintering temperature, the dielectric permittivity maximum (? _max) has a value of approximately 2795 (at 1 KHz), $ \tan \delta $ is lower than 2.5 % and the diffuseness parameter γ = 1.68 at a broad usage temperature range (150–350 °C), which indicate its potential application in high temperature multilayer ceramics capacitor field.     

Microstructure and electrical properties of (1 − x)K0.5Na0.5NbO3–x(Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 lead-free piezoelectric ceramics

The (1 ? x)K_0.5Na_0.5NbO₃ ? x(Ba_0.85Ca_0.15)(Zr_0.1Ti_0.9)O₃ (KNN–BCTZ) lead-free ceramics were fabricated by conventional solid-state sintering technique. The microstructure and electrical properties of the ceramics were investigated. The X-ray diffraction analysis revealed that the ceramics formed a single phase perovskite solid solutions with the symmetry of orthorhombic at x < 0.03. The crystal phase of the ceramics changed from orthorhombic phase to pseudocubic phase when x > 0.04. The coexistence of orthorhombic and pseudocubic (tetragonal) phases was observed near room temperature when 0.03 ≤ x ≤ 0.04. The grains grew up obviously when 2 mol% BCTZ was added, but the grain size was found to reduce gradually with further increasing BCTZ content. The T _C and T _O-T decreased with the increasing BCTZ content. The ferroelectric and piezoelectric properties were abruptly degraded as x ≥ 0.05. Optimum properties (d ₃₃ = 136 pC/N, k _p = 27 %, k _t = 26.5 %, Q _m = 25, P _r = 14.67 μC/cm², E _c = 11.23 kV/cm, T _C = 347 °C, $\varepsilon_{33}^{\text{T}} /\varepsilon_{0} = 8 6 1. 5$ ε 33 T / ε 0 = 8 6 1.5 , tan δ = 0.04) were obtained for the ceramica with x = 0.03.