“aspect” – a new spectrometer for the measurement of the angular correlation coefficient a in neutron beta decay

The combination of the coefficient a of the antineutrino/electron angular correlation with the beta asymmetry of the neutron provides a sensitive test for scalar and tensor contributions to the electroweak Lagrangian, as well as for right-handed currents. A method is given for measuring a with high sensitivity from the proton recoil spectrum. The method is based on a magnetic spectrometer with electrostatic retardation potentials such as used for searches of the neutrino mass in tritium beta decay. The spectrometer can also be used for similar studies using radioactive nuclei.     

Structural and electronic properties of C3N4−nPn (n=0,1,2,3,4)

First principles electronic structure method based on the density functional theory and the local density approximation is used to investigate the structural and electronic properties of C₃N_4−nP_n (n=0,1,2,3,4). It is found that the N-rich compounds energetically favor structures with sp² bonding, while the pseudocubic structure which is characterized by sp³ bonding is preferred by the P-rich compounds. Even though C₃N₄ is a wide-gap semiconductor, the band gap of C₃N_4−nP_n decreases rapidly when N is gradually substituted with P, and the P-rich compounds are predicted to be metallic or narrow-gap semiconductors.     

Structural and electrochemical characterization of LiMn2−δVδOy spinels

The spinel phase compounds with the composition of LiMn_2−δV_δO_y were prepared by solid reaction of the mixture of LiNO₃·H₂O, MnCO₃ and NH₄VO₃ powders. Evolution of the crystalline phases of the samples versus the vanadium content was analyzed using X-ray diffraction (XRD) technique, EPR and FT-IR spectroscopes. Cubic spinel is the predominant phase in the powders under heat treatment at 550 °C for 5 h. The valence state of manganese ion changed from +4 to +3 with vanadium substitution for charge compensation. The vanadium substitution of manganese leads the decline in capacity and cyclic behavior of the powders. The electrochemical behaviors relating to the variation of structure corresponding to the vanadium substitution were discussed.     

An application of the single specimen technique to a double cantilever beam specimen to determine GIC from a single test record

The single specimen technique is effectively used in classical fracture mechanics for evaluating the J-integral from a single test record. It was previously shown using a cracked lap shear specimen that the technique can be applied to composite structures and the energy release rate of composite laminates can be determined from a single test specimen. The objective of this investigation is to determine the η_el form of a double cantilever beam (DCB) specimen, and to compare it with that of a compact tension (CT) specimen. The result showed that while η_el is linearly related to crack length for the CT specimen, it is proportional to the reciprocal of the crack length for the DCB composite specimen. Also, G_Ic determined from the compliance method was compared with that determined from the η_el approach. The result showed that the η_el form determined from a single beam analysis can be used to determine G_Ic from a single test record.     

Bond-lengths of the atomic nearest-neighbor and next-nearest-neighbor in A1−xBxC1−yDy III–V solid solutions

On the basis of the FDUC model and the hypothesis of the constant covalent radii, the expressions of the atomic nearest-neighbor and the next-nearest-neighbor bond-lengths were derived for A_1−xB_xC_1−yD_y III–V quaternary solid solutions. This set of bond-length expressions predicts the averaged bond-lengths and bond angles at any concentration (x, y) for the III–V pseudobinary and quaternary solid solutions, which are only dependent on the lattice parameters and the concentrations of the pure end compounds. When x=0, 1 or y=0, 1, A_1−xB_xC_1−yD_y III–V quaternary solid solutions degenerate into the relative pseudobinary solid solutions, in which the nearest-neighbor and the next-nearest-neighbor bond-lengths agree well with the experimental results. Further discussion and comparison with other theoretical models are also given in this paper.     

Combinatorial pulsed laser deposition and thermoelectricity of (La1−xCax)VO3 composition-spread films

La_1−xCa_xVO₃ composition-spread film library was fabricated by combinatorial pulsed laser deposition and their thermoelectric properties were evaluated paralelly by the multi-channel probes of Seebeck coefficient and electric conductivity. Concurrent X-ray analysis verified the formation of solid soluted films in the full composition range (0x1) as judged from the linear variation of the lattice constants. The Seebeck coefficients of La_1−xCa_xVO₃ changed from a large negative value to almost zero with the increase of x, due presumably to the variation of valence in vanadium ions.The power factor in this library was as high as 0.6 μW/cm K², which was obtained at x=0, i.e. pure LaVO₃ grown at 800 °C.     

Determination of the E1 and E1+Δ1 energy bands by photoreflectance in AlxGa1−xAs in the region 0<x<0.55

The E₁ and E₁+Δ₁ energy bands of metal–organic chemical vapor deposition grown Al_xGa_1−xAs, with x in the range 0–0.55, have been determined using photoreflectance technique. The aluminum composition for each sample was determined using the energy of the room-temperature photoluminescence compensated peak value and a suitable fundamental band gap formula. The positions of the E₁ and E₁+Δ₁ peaks were determined from curve-fitting an appropriate theoretical model to our experimental data by a modified downhill simplex method. Using the results, we propose new E₁ and E₁+Δ₁ cubic expressions as functions of the aluminum composition, x, and compare them with the available reported expressions.     

Sintering behavior and microwave dielectric properties of Bi3(Nb1−xTax)O7 solid solutions

Solid solutions of Bi₃(Nb_1−xTa_x)O₇ (x = 0.0, 0.3, 0.7, 1) were synthesized using solid state reaction method and their microwave dielectric properties were first reported. Pure phase of fluorite-type could be obtained after calcined at 700 °C (2 h)⁻¹ between 0 ≤ x ≤ 1 and Bi₃(Nb_1−xTa_x)O₇ ceramics could be well densified below 990 °C. As x increased from 0.0 to 1.0, saturated density of Bi₃(Nb_1−xTa_x)O₇ ceramics increased from 8.2 to 9.1 g cm⁻³, microwave permittivity decreased from 95 to 65 while Q_f values increasing from 230 to 560 GHz. Substitution of Ta for Nb modified temperature coefficient of resonant frequency τ_f from −113 ppm °C⁻¹ of Bi₃NbO₇ to −70 ppm °C⁻¹ of Bi₃TaO₇. Microwave permittivity, Q_f values and τ_f values were found to correlate strongly with the structure parameters of fluorite solid solutions and the correlation between them was discussed in detail. Considering the low densified temperature and good microwave dielectric proprieties, solid solutions of Bi₃(Nb_1−xTa_x)O₇ ceramics could be a good candidate for low temperature co-fired ceramics application.     

Optical and electrical properties of p-type AgInSnxS2−x (x = 0–0.04) thin films prepared by spray pyrolysis

AgInSn_xS_2−x (x = 0–0.2) polycrystalline thin films were prepared by the spray pyrolysis technique. The samples were deposited on glass substrates at temperatures of 375 and 400 °C from alcoholic solutions comprising silver acetate, indium chloride, thiourea and tin chloride. All deposited films crystallized in the chalcopyrite structure of AgInS₂. A p-type conductivity was detected in the Sn-doped samples deposited at 375 °C, otherwise they are n-type. The optical properties of AgInSn_xS_2−x (x < 0.2) resemble those of chalcopyrite AgInS₂. Low-temperature PL measurements revealed that Sn occupying an S-site could be the responsible defect for the p-type conductivity observed in AgInSn_xS_2−x (x < 2) thin films.     

Study of dielectric, magnetic and ferroelectric properties in Bi1 − xGdxFeO3

Gd-doped BiFeO₃ polycrystalline ceramics were synthesized by solid-state reaction method and their dielectric and magnetic properties were investigated. X-ray diffraction pattern showed that Bi_1 − xGd_xFeO₃ (x = 0, 0.05 and 0.1) ceramics were rhombohedral. The Gd substitution has suppressed the usual impurity peaks present in the parent compound and we obtained single phase Bi_0.9Gd_0.1FeO₃ ceramic. Gd substitution reduced the antiferromagnetic Néel temperature (T_N) in Bi_1 − xGd_x FeO_3. An anomaly in the dielectric constant(ε) and dielectric loss(tan (δ)) in the vicinity of the antiferromagnetic Néel temperature (T_N) was observed. Ferroelectric and magnetic hysteresis loops measured at room temperature indicated the coexistence of ferroelectricity and magnetism. The room temperature magnetic hysteresis loops were not saturated, but the magnetic moment was found to increase with increase in Gd concentration.     

Synthesis, characteristics and oxygen-sensitive properties of SrMgxTi 1 − xO3 nanocrystals

SrMg_xTi_{1 - x}O₃ nanocrystals (x = 0.1–0.6) were synthesized by the stearic acid gel method. Powder samples were characterized by X-ray diffraction and X-ray photoelectron (XP) spectroscopy. The results showed that the lattice parameter a and the O 1s XP spectrum changed not only with the Mg content x but also with the grain size d of the samples. The conductivity of a thick film specimen fabricated on an aluminium oxide wafer was investigated in a nitrogen—oxygen atmosphere.     

Use of double clip gauge method to measure the plastic rotational factor rp

The value of the plastic rotational factor r_p at initiation in 3-point bend specimens with deep and shallow notches has been studied by using the double clip gauge method and it is shown that r_p is decreasing with decreasing of a/W, the experimental results agreeing well with the experimental results by using a clip gauge and catalytically hardening silicone rubber Unitex Xantropren Blue dental impression material.     

A simple approach of fabricating thermoelectric γ-NaxCoO2 and superconductive Nax(H2O)yCoO2-δ films using the sol–gel spin-coating method

We report a simple approach of fabricating thermoelectric γ-Na_xCoO₂ film with the c-axis orientation using the sol–gel spin-coating method. The inferred sodium content is x = 0.65 according to the correlation between the c-axis lattice constant and x. Temperature dependence of both the resistivity and thermopower resembles that of the γ-Na_0.68CoO₂ film grown by the reactive solid-phase epitaxy. The fitted thermopower data show that the bandwidth of γ-Na_xCoO₂ is found to be ~ 101 meV, being close to the quasi-particle band (70–100 meV) derived from an angle-resolved photoemission study of γ-Na_0.7CoO₂. These results enable the possibility of low-cost fabrication of γ-Na_xCoO₂-based thermoelectric film devices. Furthermore, we have also topotactically transformed the of γ-Na_xCoO₂ film to a superconducting Na_x(H₂O)_yCoO_2-δ film with T_{c, onset} = 4.12 K.     

Background analysis around Qββ for Ge double beta decay experiments, and statistics at low count rates

The background in the region of the Q-value for neutrinoless double beta decay of ⁷⁶Ge has been investigated by different methods: Simulation with GEANT 4 of the HEIDELBERG–MOSCOW experiment and analysis of other Ge double beta experiments. Statistical features of the analysis at very low count rates are discussed.     

Optical transitions near the band edge in bulk CuInxGa1−xSe2 from ellipsometric measurements

From the analysis of the variation of optical absorption coefficient with incident photon energy between 0.8 and 2.6 eV, obtained from ellipsometric data, the energy E_G of the fundamental absorption edge and E_G′ of the forbidden direct transition for CuIn_xGa_1−xSe₂ alloys are estimated. The change in E_G and the spin-orbit splitting Δ_SO=E_G′−E_G with the composition x can be represented by parabolic expression of the form E_G(x)=E_G(0)+ax+bx² and Δ_SO(x)=Δ_SO(0)+a′x+b′x², respectively. b and b′ are called “bowing parameters”. Theoretical fit gives a=0.875 eV, b=0.198 eV, a′=0.341 eV and b′=−0.431 eV. The positive sign of b and negative sign of b′ are in agreement with the theoretical prediction of Wei and Zunger [Phys. Rev. B 39 (1989) 6279].     

Phase relations, lattice thermal expansion in Ce1−xEuxO2−x/2 and Ce1−xSmxO2−x/2 systems and stabilization of cubic RE2O3 (RE: Eu, Sm)

The phase relations in CeO₂–Eu₂O₃ and CeO₂–Sm₂O₃ systems have been established under slow-cooled conditions from 1400 °C. The two-phase relations differ as the CeO₂–Eu₂O₃ system showed only two monophasic phase fields, namely F-type cubic and C-type cubic, whereas CeO₂–Sm₂O₃ system showed three phase fields namely F-type cubic, C-type cubic and a biphasic field comprising of C-type cubic and monoclinic phase. An interesting observation of this investigation is the stabilization of C-type rare-earth oxide after Ce⁴⁺ substitution, which is attributed to decrease in average cationic size on Ce⁴⁺ substitution at RE³⁺ site. The lattice thermal expansion behavior of F-type solid solution and C-type solid solution in CeO₂–Eu₂O₃ system was investigated by high-temperature XRD.     

Preparation of (Ti1−xAlx)N films from mixed alkoxide solutions by plasma CVD

(Ti_1−xAl_x)N films were prepared on a Si wafer at 700°C from toluene solution of alkoxides (titanium tetraetoxide and aluminum tri-butoxide) in an Ar/N₂/H₂ plasma by the thermal plasma chemical vapor deposition (CVD) method. The films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, electrical resistivity, and Vickers micro-hardness. Single phase TiN formed at an Al atomic fraction of 0–0.2, with a mixed TiN and AlN phase occurring up to 0.6 and single phase AlN forming above 0.8. The films had relatively sooth surfaces, 0.4 μm thick at an Al atomic fraction of 0.2, and thickened with increasing Al fraction. The atomic concentration of Ti, Al, N, O, and C determined from their respective XPS areas showed that the Ti and Al contents of the films changes with the solution composition in a complementary way. The impurities were about 10 at.% oxygen and carbon. The electrical resistivity was almost unchanged from the value of 10³ μΩ cm at 0–0.6 Al but then suddenly increased to 10⁴ μΩ cm at higher Al contents. The hardness showed a synergic maximum of about 20 GPa at an Al fraction of 0.6–0.8.     

The effect of excess titanium and crystal symmetry on electronic properties of Pb(Zr1−xTix)O3 compounds

In this paper the structural and electronic properties including band structure, energy gap and density of states have been studied for different phases of Pb(Zr_1−xTi_x)O₃ compounds with a wide range of Ti/Zr ratio (i.e. from x = 0 to x = 1). The calculations were performed in the framework of density functional theory (DFT), using the full potential-linearized augmented plane wave (FP-LAPW) method with the generalized gradient approximation (GGA). In general, our results show that for all cases (x = 0, 0.33, 0.5, 0.66 and 1) by increasing the amount of Ti atoms the band gap decreases, because of the strong hybridization between Ti-3d and O-2p orbital. But, in other hand, decreasing the crystal symmetry results in widening the band gap. For the monoclinic phase (x = 0.5) the effect of excess Ti on the band gap is less than the effect of crystal symmetry, so there is an increase in the band gap.     

Effect of hydrogen radical on growth of μc-Si in hetero-structured SiCx alloy films

The changes of the crystallinity of μc-Si phase are studied in samples deposited with hydrogen dilution ratio, H₂/SiH₄, from 9.0 to 19.0 by hot-wire CVD (Cat-CVD). In the samples deposited at filament temperature, T_f, of 1850 °C, the crystalline fraction and the crystallite size of μc-Si phase increased with increasing the H₂/SiH₄. The carbon content, C/(Si+C), was almost constant. In the XRD patterns, the intensity of Si(1 1 1) peak decreased and that of Si(2 2 0) peak increased with increasing the H₂/SiH₄. In the samples deposited at T_f of 2100 °C with H₂/SiH₄ over 11.4, the μc-Si phase was not formed and the C/(Si+C) increased. The growth mechanism of μc-Si in hetero-structured SiC_x alloy films is discussed.     

Electronic structure of the ladder-chain compound Sr14−xCaxCu24O41

The electronic structure of the ladder-chain compound Sr_14−xCa_xCu₂₄O₄₁ is studied by ab initio calculations within the local density approximation. The effects of Ca substitution and structure modulation on electronic structure are discussed. It is found that 0.05 holes per copper atom are on the ladder layers for fully substituted compound, Ca₁₄Cu₂₄O₄₁.