表面活性剂在IC芯片光刻工艺中的应用

叙述了表面活性剂的性质、分类、分子结构特点,重点介绍了表面活性剂在光刻工艺的涂胶、显影、湿刻工序中的应用.适当加入表面活性剂,在现有设备的条件下可极大地提高光刻质量,对双极电路以及CMOS电路制作都有着重要的现实意义.     

KrF光刻工艺技术

比较了248nm KrF光刻工艺与i-Line工艺上的异同,利用工艺原理和光学原理分析了248nm KrF光刻工艺的特点.对一些光刻工艺中容易出现的问题进行了探讨,使248nm KrF光刻技术在实际工艺中可以得到灵活应用.     

无显影光刻汽相腐蚀工艺中的质量问题

一、无显影光刻工艺一般的光刻为涂胶、前烘、掩模对准曝光、显影、坚膜、湿法腐蚀和去胶七步工艺.无显影光刻工艺,省去了坚膜和显影两步操作,采用氢氟酸气氛进行腐蚀,叫汽相腐蚀工艺.     

投影光刻中焦深问题的研究与分析

聚焦对投影光刻系统（如步进机）的影响是了解及控制光刻工艺的关键因素。随着特征尺寸的减小，它对聚焦误差的灵敏度迅速升高。因此，许多人认为聚焦灵敏度是光学光刻进入更小特征尺寸的主要障碍。本文将对焦深的定义作以定量的分析     

先导光刻中的光学邻近效应修正

按照逻辑器件发展的节点顺序,依次论述了各种光学邻近效应修正技术:基于经验的光学邻近效应修正、基于模型的光学邻近效应修正、曝光辅助图形、光源和掩模版的优化、反演光刻技术以及两次曝光技术等。概括了各种技术出现的逻辑技术节点、数据处理流程、修正的表现形式和效果、优势和发展前景等。最后就先导光刻工艺的研发模式(先建立光学和光刻胶模型,再进行"计算光刻"),论证了光刻工艺的研发必须和光学邻近效应修正的数据流程实现互动的观点,即任何光刻工艺参数的变动都会影响到"计算光刻"模型的准确性,需要重新进行修正,以避免原计算可能导致的失败。因此,光学邻近效应修正是先导光刻工艺研发的核心。     

增黏剂(HMDS)在锑化铟光刻工艺中的应用

介绍了增黏剂(HMDS)的物化性质及其在光刻工艺中的作用,并且通过实验研究将增黏剂应用于锑化铟材料的光刻工艺,改善了锑化铟的表面状态,增强了锑化铟衬底与光刻胶的黏附性,进而在湿法腐蚀等后续工艺中提高了光刻胶的抗腐蚀性.     

Shipley i7350xp光刻胶用于0.5μm孔光刻工艺的研究

本文介绍了 Shipley i7350xp 光刻胶用于0.5 μm 孔光刻工艺的研究,评估 Shipley i7350xp光刻胶用于0.5μm 孔光刻工艺层次的可行性。     

微透镜列阵光刻工艺过程的模拟与分析

建立了连续深浮雕微透镜列阵光刻工艺的数学模型,通过计算机仿真实现了对工艺过程的模拟分析。为刻蚀过程中各参量的选取和刻蚀结果的分析提供了可靠的依据,对整个光刻工艺过程具有指导意义。     

光刻掩模的静电放电损伤及其防护

半导体集成电路制造中,光刻工艺是整个制造过程中的核心技术.而光刻掩模(Reticle,Photomask)则为光刻技术中的最为关键的部件.随着半导体生产技术的不断提升,光刻掩模对静电放电敏感度也越来越高,如何防护光刻掩模避免遭受静电放电的损坏,已成为目前半导体集成电路制造中的一项挑战.     

集成电路制造中各种因素对光刻工序质量影响的统计分析

本文用统计方法研究了光刻工艺,确定了对元件线条尺寸影响最大的因素,列出了这些因素的分布值;还确定了在光刻工艺中某些工序中必须检验的参数.并列出了测量这些参数的抽样数量;用多因素试验法找到了进行某些光刻工序的最佳方式,给出了达到最佳值的元件线条尺寸分布值;还提出建立整个光刻工艺数学模型的方法。     

A structured methodology for IC photolithography synthesis insemiconductor manufacturing

A simple method for structuring the synthesis of an integrated-circuit photolithography fabrication process is described. This method has allowed Cameo, a computer-aided photolithography process synthesis system, to be built. Cameo is useful for synthesizing and evaluating a number of possible good solutions to a set of photolithography process requirements. In its current prototype implementation it is most useful for users who are familiar with integrated-circuit photolithography but are not experts. The structuring mechanism is based on dividing photolithography process design into three main subtasks corresponding to initial strategic decisions: choosing the aligner/exposer, choosing the photoresist and scheme for its application, and choosing the etch method. The synthesis work proceeds in turn at three distinct levels of detail in each subtask, the last level resulting in the complete fabrication recipe. Four types of solution methods were found to suffice for implementing nearly all steps of the synthesis: rule-based reasoning, algorithmic computation, graph interpolation, and table lookup     

A Neural-Network Approach for Defect Recognition in TFT-LCD Photolithography Process

Since the advent of high qualification and tiny technology, yield control in the photolithography process has played an important role in the manufacture of thin-film transistor-liquid crystal displays (TFT-LCDs). Through an auto optic inspection (AOI), defect points from the panels are collected, and the defect images are generated after the photolithography process. The defect images are usually identified by experienced engineers or operators. Evidently, human identification may produce potential misjudgments and cause time loss. This study therefore proposes a neural-network approach for defect recognition in the TFT-LCD photolithography process. There were four neural-network methods adopted for this purpose, namely, backpropagation, radial basis function, learning vector quantization 1, and learning vector quantization 2. A comparison of the performance of these four types of neural-networks was illustrated. The results showed that the proposed approach can effectively recognize the defect images in the photolithography process.     

紫外线厚胶光刻技术研究及应用

紫外线厚胶光刻技术已广泛应用于 3D微机械结构的制作。本文选用AZ4 6 2 0和SU 8两种光刻厚胶 ,采用德国卡尔·休斯公司的MA 6双面对准光刻机 ,对紫外线光刻工艺条件进行了对比研究 ,结果表明 ,负性光刻胶SU 8的光敏性好 ,胶结构图形的侧墙较陡直 ,能够实现较大的深宽比 ,为复杂结构的三维微机械器件的制作提供了保证。     

A novel in-line automated metrology for photolithography

Novel metrology has been developed for measuring in situ film thickness and absorption coefficient simultaneously. Designed specifically for photolithography processes, this metrology if applied to photoresist films, can measure thickness and photoactive compound concentration in situ, which are important parameters for photolithography process control and diagnosis     

光刻法图案化石墨烯研究

介绍了光刻法石墨烯的制备方法,分析了光刻工艺过后石墨烯方阻升高的不良机理,并给出了相应的优化方案。首先,根据半导体工艺研发制程完成石墨烯图案化工艺方案,并对工艺方案进行有效优化。接着,分析了石墨烯光刻法图案化后方阻升高的机理。最后,通过改善工艺方案,增加金属湿法刻蚀的步骤,解决石墨烯方阻升高的问题。实验结果表明:通过光刻法制得的石墨烯具有更高的图案精细度,关键尺寸可达到5μm。双层石墨烯膜的方阻在光刻法图案化后,通过工艺改善可以保持原始膜最初阻值约330Ω/,甚至可以降低到270Ω/左右。光刻法图案化石墨烯技术,既能保证石墨烯图案尺寸精度,又可以保持甚至降低石墨烯方阻值,适合于量产开发。     

Photolithography Control in Wafer Fabrication Based on Process Capability Indices With Multiple Characteristics

Photolithography, typically taking about one- third of the total wafer manufacturing costs, is one of the most complex operations and is the most critical process in semiconductor manufacturing. Three most important parameters that determine the final performance of devices are critical dimension (CD), alignment accuracy and photoresist (PR) thickness. Process yield, a common criterion used in the manufacturing industry for measuring process performance, can be applied to examine the photolithography process. In this paper, we solve the photolithography production control problem based on the yield index $S_{PK}$. The critical values required for the hypothesis testing, using the standard simulation technique, for various commonly used performance requirements, are obtained. Extensive simulation results are provided and analyzed. The investigation is useful to the practitioners for making reliable decisions in either testing process performance or examining quality of an engineering lot in photolithography.      

用光致抗蚀剂膜层制作衰减相移掩模

提出一种用光致抗蚀剂膜层制作单层结构衰减相移掩模的新方法,介绍这种方法的原理和制作工艺,并给出这种方法制作的衰减相称掩模用于准分子激光光刻实验,得到显著提高光刻分辨力的实验结果。     

Ashing process for dry photolithography

This note reports the ashing process for dry photolithography. Various advantages and possible applications of the process are also pointed out.