SIW-Based W-Band Low Phase-Noise Injection-Locked Harmonic Oscillator

A W-band planar injection-locked harmonic oscillator (ILHO) based on substrate integrated waveguide (SIW) is implemented. This ILHO has a free-running output frequency around 94.6?GHz while the technique of harmonic extraction from diodes is used as a frequency multiplier. It has an output locking bandwidth of 300?MHz (from 94.45 to 94.75?GHz) as injecting a signal around 47.3?GHz with the fundamental injection-locked behavior, and the output power is more than 5.8 dBm. The combination of simple synchronization with a low-frequency reference signal allows the generation of stable and low phase-noise W-band signals with a fully integrated planar source.     

Varactor Controlled Gunn Oscillator at W-Band

This paper describes the experimental circuit and measured performance of varactor tuned Gunn oscillator at W-band. The power output of 12.5 dBm has been achieved when packaged GaAs Gunn diode is used. Linear frequency excursion of 150 MHz with power variation of 1 dB has been observed when varactor was given reverse bias from 0 to 20 volts. GaAs hyperabrupt varactor is used in parallel to gunn diode at a distance of odd multiple of λg/2 in waveguide channel.     

Millimeter-Wave (W-Band) Quartz Image Guide Gunn Oscillator

Dielectric image-guide Gunn oscillator using fused quartz as the guide material has been investigated at frequencies around 94 GHz. Computer-controlled CO/sub 2/ laser cutting of quartz to the designed image-guide patterns has also been achieved. A resonant disk and pin bias circuit was used to tune the oscillator to an output power of 5 mW at the oscillation frequency of 94.2 GHz. An electronic frequency tuning of 350 MHz was measured with the oscillation characteristics similar to waveguide cavity oscillators. By varying the bias circuit disk and pin parameters, the Gunn-oscillator tuning characteristics have also been recorded for the future circuit performance optimization.     

W波段光控Gunn管谐波振荡器的实验研究

本文提出了Ｗ波段Ｇｕｎｎ管谐波型光控振荡器的设计方案，该方案在振荡器的基波腔内填充本征半导体Ｓｉ片，并通过光纤将半导体激光器产生的光束耦合到Ｓｉ片，以达到光对振荡器工作频率的控制，在实验中采用波长为０．８６３μｍ的激光照射Ｓｉ片，取得了光控频率达７ＭＨｚ的结果。     

A Dual-Diode 73-GHz Gunn Oscillator

It is shown that two resonant cap structures can be mounted in a common waveguide to combine power from two Gunn diodes. Approximately 80-mW power was obtained at 73 GHz.     

X波段脉冲耿氏振荡器

文章描述了X波段脉冲耿氏二极管、微波电路、脉冲调制器结构和设计原理以及脉冲耿振荡器的研制结果:在9～10GHz范围内,脉冲功率一般值为5～9W,最佳值10.8W,最大效率为5.5%,最大工作比为1%.     

Ku波段脉冲耿氏振荡器

文章描述了脉冲耿氏管、微波电路和脉冲调制器的结构和设计原则;给出了Ku波段脉冲耿氏振荡器的研制结果:在13～15GHz范围内,脉冲功率大于5W,工作比≤1％,最大效率为5％。     

6毫米波段鳍线体效应管振荡器

本文利用直线法(method of lines)对不对称单脊鳍线的特性进行了分析。设计了一种6mm波段鳍线体效应管振荡器。在频率为49.2GHz左右得到最大功率为60mW,且有约1GHz的机械调谐带宽。     

高性能U波段砷化镓体效应二极管

介绍了一种新型的高性能毫米波砷化镓体效应二极管,通过对材料、参数、工艺的优化与设计,较好地解决了高工作频率与高输出功率之间的矛盾,实现了器件性能的提升与突破。在U波段,最大连续波输出功率达180mW,最高转换效率约5%。     

W-Band Planar Wide-Angle Scanning Antenna Architecture

This paper proposes a hybrid scanning antenna architecture for applications in mm-wave intelligent mobile sensing and communications. We experimentally demonstrate suitable W-band leaky-wave antenna prototypes in substrate integrated waveguide (SIW) technology. Three SIW antennas have been designed that within a 6.5 % fractional bandwidth provide beam scanning over three adjacent angular sectors. Prototypes have been fabricated and their performance has been experimentally evaluated. The measured radiation patterns have shown three frequency scanning beams covering angles from 11 to 56 degrees with beamwidth of 10?±?3 degrees within the 88-94 GHz frequency range.     

1.25厘米单调谐体效应振荡器

本文报导了一种单调谐体效应振荡器.该振荡器结构类似于Kurkoawa电路.但谐振腔采用H_(011)高Q圆柱腔.该振荡器电路负载变化对振荡频率影响较小,能够避免通常反射腔稳频振荡器受到负载变化可能出现跳频的缺点.而且噪声电平比其它振荡源要小.对电路参数经过适当选择后,振荡器的输出效率能达到40～60%,输出功率30～100mW.机械牵引带宽大于600MHz.该振荡器的主腔和调谐活塞采用线胀系数不同的材料进行温度补偿.当温度循环在-40℃至+70℃的范围内,频率温度系数一般优于0.08MHz/℃,功率稳定度优于0.022dB/℃.     

Planar Schottky-gate Gunn devices

Gunn devices, with a Schottky diode as control electrode, were fabricated and investigated. The experimental results are compared with calculations, which are also outlined, and agreement between theory and experiment is found to be satisfactory. A jitter in domain nucleation is shown to be due to fluctuations in the anode voltage.     

Ka-Band Substrate IntegratedWaveguide Gunn Oscillator

Based on the substrate integrated waveguide (SIW) technology, a new type of Ka-band Gunn Diode Oscillator was developed. Main emphasis was placed on SIW resonant cavity structure. Restrictions on the performance of the oscillators imposed by packaged networks and the self-characteristic of the Gunn diode devices have been analyzed. This oscillator performance is characterized by a medium level output power of 15.2 dBm, a low phase noise less than -91.23 dBc/Hz at 100 kHz and frequency excursion 53 MHz over temperature range from 15degC to 70degC. It has some advantages such as planar integration, low cost, small size, good temperature-frequency stability, low phase noise.     

Cavity Stabilized X-Band Gunn Oscillator

The design and resultant experimental investigation of a pulling mechanism for a highly stable X-band Gunn oscillator, stabilized by a high Q TE/sub 011/-mode reflection cavity, are described. The oscillator shows a temperature coefficient of less than -7 x 10/sup -7/ / /spl deg/C,a low FM noise of 8 Hz per 1-kHz BW at 100 kHz from the carrier, and a wide-band mechanical-tuning capability of several hundred megahertz. In addition, experimental results concerning the hysteresis phenomena of oscillating frequencies, power, FM-noise versus cavity-pulling frequencies, and bias voltages are described.     

E波段GaAs体效应二极管

本文叙述E波段(60～90GHz)GaAs体效应二极管的设计及其研制结果,着重阐述合理设计材料参数和结构参数,通过选择最佳材料参数和使用超小型同轴陶瓷管壳,使器件的微波性能和可靠性得列提高。在80GHz和90GHz频率下,分别获得了70mW和42mW的输出功率,效率相应为2.6％和2.1％。     

A Planar Gunn Diode Operating Above 100 GHz

We show the experimental realization of a 108-GHz planar Gunn diode structure fabricated in GaAs/AlGaAs. There is a considerable interest in such devices since they lend themselves to integration into millimeter-wave and terahertz integrated circuits. The material used was grown by molecular beam epitaxy, and devices were made using electron beam lithography. Since the frequency of oscillation is defined by the lithographically controlled anode-cathode distance, the technology shows great promise in fabricating single chip terahertz sources.     

太赫兹二次谐波回旋振荡管

针对应用于动态核极化核磁共振成像的太赫兹回旋振荡器管展开研究,采用相对论电子回旋脉塞非线性理论分析0.46 THz 回旋振荡管互作用系统的动力学行为,研究系统模式竞争问题。优化器件系统参数以获得较高的注-波能量转化效率。利用粒子模拟(PIC)方法验证非线性动力学研究结果,模拟结果显示当工作电压为12 kV、工作电流为0.24 A 时,输出功率和效率分别为173 W 和6%。若采用降压收集极后,则整管效率可进一步提高至14.4%。     

变容二极管调谐体效应振荡器的CAD

本文建立了一种新的 Gunn VCO 的电路模型,计算了 Gunn 管和变容二极管之间的径向盘耦合电容。首次利用谐波平衡法对 Gunn VCO 进行了非线性分析,设计并制作了一 Ka 波段混合集成 Gunn VCO,实验结果与 CAD 结果进行了比较,证明了该种电路模型与分析方法的有效性。此外利用该分析程序研究了Gunn 管和变容二极管之间的耦合与调谐带宽的关系。在分析的基础上,利用线性拟合误差函数作为 Gunn VCO 频率调谐线性度的优化目标函数,对 VCO 的频率调谐特性进行了优化,确定了此种电路在最佳线性调谐时 PN 结幂指数γ的值,从而在理论上对满足线性调谐的变容二极管提出了要求。     

C波段20W脉冲耿振荡器

完整的脉冲耿振荡器包括脉冲耿二极管、微波电路及脉冲调制器。本文主要描述了该振荡器的结构和设计原理,并给出了C波段脉冲耿振荡器的研制结果:在4～6GHz,得到的最大脉冲功率为22W,最佳效率为5％,最大工作比为1％。