APD阵列单脉冲三维成像激光雷达的发展与现状

基于APD阵列的激光三维成像雷达发射单个脉冲即能获得目标的三维信息,具有重要的军事和民用价值。首先简要介绍了APD阵列的三维成像激光雷达的特点和原理,并综述了国外盖革APD阵列和线性APD阵列的发展历程和最新进展,然后对国内近年来在此方向的研究成果加以介绍,最后总结了APD阵列激光雷达的优势和发展前景,并归纳了国内外在此方向的研究趋势。     

盖革模式APD阵列在激光雷达技术中应用

激光雷达技术是成像前沿技术之一,基于盖革模式APD焦平面阵列的三维成像激光雷达以其高灵敏度、高距离分辨率、高成像效率而成为国内外研究热点.本文介绍了美国麻省理工学院林肯实验室研发的盖革模式APD阵列的结构和性能.该APD阵列具有单光子探测能力,采用桥接集成技术增加了APD阵列的集成度,每个像素都有独立的计时电路距离信息直接读出.同时文中还给出了APD阵列激光雷达在伪装目标识别、广域地形三维成像方面的最新研究成果.旨在为我国激光雷达技术研究与传感器选择方面提供参考.     

基于盖革APD阵列的微扫描激光成像技术

盖革APD阵列探测的激光成像雷达具有高灵敏度、高帧频、宽视场、坚固、体积小等优点,成为了激光成像雷达发展的趋势。但目前APD阵列像元填充比低,器件阵列少,无法满足高分辨率激光成像的要求。为了解决该问题文中提出采用激光点阵发射的方法与APD阵列像元一一对应,采用拼接技术提高成像分辨率,采用微扫描技术提高激光成像视场。通过构建实验系统,完成了室外试验,成像效果良好,使用现有APD探测器（3232）将系统空间分辨率提高了四倍（6464）,提高了激光三维成像能力。     

盖革模式APD阵列激光雷达的三维成像仿真

基于盖革模式APD阵列激光雷达是一种非扫描三维成像激光雷达,为研究系统的三维成像效果,对该系统的三维图像进行仿真.首先应用光线追踪法构建三维场景;并对APD像元的探测概率和累积概率进行仿真,在此基础上给出对探测距离仿真的方法,得到激光雷达探测的距离像;最后通过坐标变换将距离像转化为三维图像,实现了三维场景重建.仿真结果...     

APD阵列激光成像雷达处理电路的研究进展

基于雪崩光电二极管(APD)阵列探测器的激光成像雷达在高速、高精度成像方面具有重要研究价值,是探测技术的热点研究方向。简要分析了采用APD阵列成像激光雷达的优点,介绍了APD阵列的工作模式和特性。研究了处理电路的结构和测距电路的实现方法,并分析这些方法的优缺点;综述了国内外在APD阵列激光成像雷达应用方面的研究进展,并对未来的发展趋势进行了展望。     

基于不同作用体制下的非扫描激光成像雷达探测技术

激光成像雷达是激光技术和雷达技术相结合的产物,在军事上有着广泛的应用前景.非扫描激光成像雷达是近年来出现的新型雷达,因没有机械扫描装置,具有高帧频率、宽视场、高可靠性的特点.本文对基于相位法的非扫描激光成像雷达、基于多狭缝条纹管的非扫描激光成像雷达、基于阵列的非扫描激光成像雷达的原理、特点进行了分析,指出了每种体制的局限性,为应用具体背景下的非扫描激光成像雷达体制的选择提供了一定的参考价值.     

基于光学相控阵的提高APD阵列三维成像分辨率方法

小面阵APD阵列较低的像元数量限制了其三维成像分辨率。提出了一种基于光学相控阵的提高APD阵列三维成像分辨率方法,用光学相控阵生成与APD阵列像元数量相同且位置匹配的光束阵列并实现扫描。光束阵列中子光束发散角小于APD阵列中单个像元的瞬时视场角,子光束在单个像元视场内扫描实现APD阵列对目标三维信息的多次采集,进而提高APD阵列的分辨率。在Matlab中基于二维标量衍射理论仿真了光束阵列在远场的分布,并分析了子光束发散角与扩展周期数之间的关系。最后采用液晶相位空间光调制器作为光学相控阵器件,结合CCD接收回波信号,进一步验证了提出方法的可行性。     

阵列分束激光三维成像技术

针对现有激光三维成像中使用的面阵APD探测器相邻像元间隔较大,导致激光利用率低从而影响探测距离的缺点,提出阵列分束激光三维成像技术。该技术对激光发射源采用液晶空间光调制器进行衍射阵列分束,将一束激光分成与阵列APD探测器相应的阵列子光束,调整激光发射子光束和阵列APD探测器的位置,使得子光束照射目标后聚焦到阵列APD探测器的像元上,提高了整束激光的利用效率。介绍了阵列分束激光三维成像技术系统组成和工作原理,提出采用液晶空间光调制器的方法实现阵列分束的方案,研制了阵列分束激光三维成像原理样机,利用研制的原理样机对采用阵列分束后的效果进行了验证。实验结果表明,采用该技术后,采用峰值功率10 kW、脉宽8 ns的激光源,填充因子2/3的88 APD,三维成像作用距离达到510 m,同等条件下与不分束相比,作用距离提升39.1%。     

光束阵列扫描LM APD阵列三维成像方法性能分析

激光三维成像是空间目标自主交会中相对位姿信息获取的关键技术,线性模式雪崩光电二极管阵列成像具有帧频高、小型化、功耗低等优势,能够适用于星载平台三维成像要求。但是目前国内阵列探测器像元数量有限,需要采用扫描方式提高三维成像分辨率。本文针对光束阵列扫描三维成像方法在空间非合作目标三维成像的应用场景,分析了该成像方法的成像性能。分析结果表明,光束阵列扫描方法能够有效提高LM APD阵列三维成像分辨率,且在能量效率、光束均匀性等方便均有较好的表现。     

基于盖革APD阵列的光子计数三维成像

基于盖革APD阵列的激光主动探测系统具有较高的灵敏度、空间分辨率和测距精度,在遥感探测、目标识别等领域具有广泛的应用前景。受探测模式、噪声等因素影响,盖革APD阵列需要大量累积光子探测来实现高精度成像。针对该问题,基于目前国内规模最大的InGaAs盖革APD阵列,搭建了1 064 nm激光探测实验装置,对室外600 m外目标进行了成像。通过分析光子计数物理过程,建立了目标反射率与距离的极大似然估计。结合自然图像稀疏的先验知识,采用正则化图像重构方法,改善了累积光子数较少情况下的成像精度。通过对比,验证了正则化图像重构方法能够抑制光子数涨落引起的参数估计偏差,提升了成像质量。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.