分步法制备MoS2/Ti3SiC2层状复合材料

研究了采用分步法制备MoS2/Ti3SiC2层状复合材料的工艺,其制备过程分2步进行.首先制备Ti3SiC2高纯粉,再在1 400℃,30 MPa条件下热压烧结制备MoS2/Ti3SiC2层状复合材料.其MoS2含量分别为2%,4%,6%,8%(w/%).用XRD分析比较4种不同MoS2含量的烧结试样的相组成,并测试维氏硬度和电导率.实验结果表明,当MoS2含量为4%时,MoS2/Ti3SiC2烧结试样的硬度达到7.83 GPa,且电导率达到10.05×106 S·m-1.MoS2含量再增加时,烧结试样的硬度有所增大,但电导率有所下降.     

热压烧结添加MoS2的Ti3SiC2复合陶瓷及性能

利用热压烧结工艺(Hot-Pressing Sintering HP)制备不同MoS2质量含量的Ti3SiC2复合陶瓷,并研究其性能.研究表明,在烧结温度为1 400℃,30 Mpa压力,保温60 min的条件下,Ti3SiC2复合陶瓷烧结体的相对密度达99%以上.在Ti3SiC2中添加MoS2能大幅提高材料的性能,当MoS2含量为4 w%时,Ti3SiC2复合陶瓷的显微硬度达到7.83 Gpa,同时它的电导率达到10.05×10#S·m-1.在载荷为38 N和转速为400 r/min下,Ti3SiC2复合陶瓷在干摩擦和油润滑两种摩擦条件下的摩擦系数分别为0.176～0.283和0.062～0.134,并且试样的磨损率分别为2.657×10-6 mm3·N-1·m-1和1.968×10-7 mm3·N-1·m-1,比单相Ti3SiC2陶瓷的磨损率(9.9×10-5 mm3·N-1·m-1)小.     

原位热压合成Ti3AlC2/Al2O3复合材料的研究

以Ti,Al,Tic,TiO2粉末为原料,采用原位热压合成法制备了Ti3AlC2/Al2O3复合材料.主要考察不同Al2O3含量对复合材料性能的影响.在1 400℃,30 MPa压力,保温2 h条件下烧结制得致密的Ti3Alc2/Al2O3块体材料.采用XRD分析了不同Al2O3,含量的复合材料的相组成.用SEM观察组织结构特征.测量了维氏硬度和电导率同Al2O3含量的关系曲线.研究结果表明,A12O3,的加入可大幅度提高复合材的硬度.Ti3AlC2/25%A12O3的维氏硬度可达8.7 GPa.虽然添加Al2O3后复合材料的电导率有所下降,但Al2O3对复合材料强度和硬度的增加有显著的贡献.Ti3Al2C2/Al2O3乃不失为一种性能良好的高温结材材料.     

放电等离子合成Ti3AlC2/TiB2复合材料的制备及性能研究

采用放电等离子烧结方法研究了Ti3AlC2/TiB2复合材料的制备和不同TiB2含量(体积百分数)对Ti3AlC2/TiB2性能的影响.研究表明,在1 250℃,30 MPa压力和保温8 min条件下烧结,可以得到相对密度达98%以上的致密Ti3AlC2/TiB2块体材料;在Ti3AlC2中添加TiB2能大幅度提高材料的硬度;Ti3AlC2/TiB2维氏硬度达到10.39 GPa,电导率达到3.7×106 S·m-1当TiB2含量为10%时,抗弯强度为696 MPa,断裂韧性为6.6 MPa·m1/2,但当TiB2含量继续增加时,由于TiB2的团聚和TiB2抑制Ti3AlC2晶体的生长导致了材料的抗弯强度和断裂韧性的下降.     

引入MgAl_2O_4对Ti_3SiC_2基复合材料性能的影响

采用反应热压烧结法制备MgAl2O4/Ti3SiC2复合材料,研究热压温度和MgAl2O4含量对该复合材料相组成、力学性能及抗氧化性能的影响。结果表明:热压温度影响MgAl2O4/Ti3SiC2复合材料相组成,在1 450℃烧结可得到性能良好的MgAl2O4/Ti3SiC2复合材料。引入适量的MgAl2O4,起到弥散强化的作用,有助于提高复合材料的力学性能,当引入量为20wt%时,抗弯强度为527.6 MPa,断裂韧性为7.09 MPa·m1/2。MgAl2O4/Ti3SiC2试样的抗氧化性能优于Ti3SiC2试样。MgAl2O4/Ti3SiC2复合材料在1 400℃氧化后的氧化层分两层,外层是Mg0.6Al0.8Ti1.6O5和金红石型TiO2,内层是由TiO2、方石英SiO2及少量未氧化的基体相混合组成。     

原位合成(TiB_2+TiC)/Ti_3SiC_2复相材料及其性能研究

在热力学分析的基础上,以TiH2粉、Si粉、石墨粉与B4C粉为原料,采用热压烧结法原位合成制备了(TiB2+TiC)/Ti3SiC2复相材料.采用X射线衍射、扫描电镜与透射电镜对材料的物相组成和显微结构进行了表征,研究了烧结温度对材料物相组成、烧结性能、力学性能与显微结构的影响.结果表明,1400～1600℃烧结温度范围内均能获得致密的(TiB2+TiC)/Ti3SiC2复合材料.随着烧结温度的升高,复合材料的强度、断裂韧性与显微硬度均逐渐提高,1500～1600℃烧结所得复合材料具有优化、微细的显微结构,抗弯强度与断裂韧性均分别高于700MPa与9MPa·m1/2,显微硬度为7.33～8.31GPa.原位合成的柱状TiB2与等轴状TiC协同作用,通过颗粒增强、裂纹偏转、晶粒拔出、晶粒细化等机制对Ti3SiC2基体起到了显著的补强增韧效果.     

放电等离子烧结工艺合成Ti3SiC2材料

以铝为助剂结合放电等离子烧结工艺,在较低温度下快速制备出高纯致密Ti3SiC2块体材料.掺加适量铝能加快Ti3SiC2的反应合成,提高制备材料的纯度,并促进Ti3SiC2晶体的生长和材料的快速烧结致密.在升温速率为80℃/min,z轴压力为30MPa时,材料制备的最佳温度为1250～1300℃.所制备材料经XRD、SME和EDS分析表明不含TiC和SiC等杂质相,Ti3SiC2为5～15μm的板状结晶,断裂韧性为6.8±0.2MPa·m1/2,弯曲强度为420±10MPa.     

碳纤维增强Cu-Ti3SiC2复合材料的性能与烧结温度的关系

研究了在Cu-Ti3SiC2复合材料中添加2%体积含量碳纤维的致密度、电导率和硬度同烧结温度的关系.实验结果表明,加入碳纤维的Cu-Ti3SiC2复合材料较未加入碳纤维的Cu-Ti3SiC2复合材料的致密度和电导有少许下降,但布氏硬度有大幅度提高.随着烧结温度的上升,碳纤维增强Cu-TiSiC2复合材料的相对密度上升较快,在1 000℃时达到99.21%.电阻率随烧结温度的上升而下降;布氏硬度随着烧结温度的上升而提高,但增幅较缓.     

热压反应烧结法制备Al_2O_3/Ti_2AlC复合材料及其微观结构和性能

以Ti、Al和活性炭粉为原料,通过高能球磨及热压反应烧结法在1200℃合成Al2O3/Ti2AlC复合材料,即是在Ti2AlC层状材料的制备过程中同时被合成。研究了烧结温度对反应产物的影响,并重点分析了材料微观结构和性能的关系。结果表明:高能球磨使Ti2AlC的烧结温度降低,热压烧结在1200℃时得到了物相比较均匀、致密的Al2O3/Ti2AlC复合材料;同时分析材料微观结构,少量Al2O3的引入抑制了Ti2A1C晶体的异常长大,使得晶粒细小且均匀。力学性能测试表明,该材料室温抗弯强度可达275.4MPa,断裂韧度可达10.5MPa.m1/2,密度为4.2g/cm3。     

陶瓷添加物对Ti_3SiC_2基复合材料抗氧化性的影响

为研究陶瓷添加物对Ti3SiC2基复合材料性能的影响,首先,采用反应热压烧结法制备了Ti3SiC2材料及陶瓷添加物含量均为30wt%的SiC/Ti3SiC2、Al2O3/Ti3SiC2和MgAl2O4/Ti3SiC2复合材料。然后,测试了材料的力学性能和导电性,在1 373~1 773K温度范围内对Ti3SiC2基复合材料的抗氧化性进行了研究,并对其烧结试样的物相组成和显微结构等进行了表征。结果表明:Ti3SiC2在高温氧化后的主要产物为TiO2和SiO2;氧化层分为内外2层,内层由TiO2与SiO2这2相混合组成,外层为TiO2;氧化层中存在大量显气孔,结构较为疏松,导致抗氧化性较差。与Al2O3/Ti3SiC2和MgAl2O4/Ti3SiC2复合材料相比,SiC/Ti3SiC2复合材料具有更好的抗氧化性。     

VLE data for CO2-CF2Cl2, N2-CO2, N2-CF2Cl2 and N2-CO2-CF2Cl

Knowledge about vapour-liquid (VLE) is required as a basis of reliable calculations for separation processes. Correlations available for the prediction of T, p, x, y data are less accurate for mixtures at high pressures and mixtures containing supercritical components. The results of VLE experiments are reported and compared with data calculated with equations of state.     

Preparation of ZrO2-CeO2 and HfO2-CeO2 nanopowders

We prepared weakly agglomerated powders of ZrO₂-CeO₂ and HfO₂-CeO₂ solid solutions 5–8 nm in particle size, consisting of monoclinic and tetragonal phases. After heat treatment at 1200°C, the crystallite size was 30 and 14 nm, respectively. We also examined the effect of precipitate freeze drying on the crystallization of hafnia-based solid solutions containing up to 20 mol % CeO₂.     

Thermal diffusion in binary mixtures H2-CCl2F2 and H2-CHClF2

Thermal diffusion coefficients were measured in two gaseous mixtures, in which one component was close to the critical temperature, in the pressure range (19.6–127.4)·10⁴ N/m² and at a freon concentration of 0.25–0.8.     

Comparison of the Electronic Structures of La2CuO4, Sr2CuO2Cl2, and Sr2CuO2F2

First-principles cluster calculations are reported of the local electronic structure of the three compounds: La₂CuO₄, Sr₂CuO₂Cl₂, and Sr₂CuO₂F₂. The copper ${\text{3d}}_{x^2 - y^2 } $ and the planar oxygen 2p _σ atomic orbitals exhibit a similar degree of covalency. The out-of-plane orbitals, however, are quite different with the ${\text{3}}d_{3z^2 - r^2 } $ atomic orbital lowered significantly in energy for chlorine and fluorine apical positions.     

Radial GRIN glasses in Li2O-Na2O-Al2O3-TiO2-SiO2 systems

A series of GRIN glass rods have been developed in Li2O-Na2O-Al2O3-TiO2-SiO2 systems. Negative radial refractive index profiles were generated by exchanging Na+ for Li+ ions in these glass rods. It has been observed that TiO2 plays a vital role in increase in the profile depth and maximum change in the refractive index because of its ambivalent nature. Change in the refractive index can be further increased by increasing the concentration of exchanging cation in the base glass.     

Elastic and Electronic Properties of Superconducting CaPd 2 As 2 and SrPd 2 As 2 vs. Non-superconducting BaPd 2 As 2

The first-principles calculations were performed to predict the elastic and electronic properties of the superconducting ThCr₂Si₂-type phases CaPd₂As₂ and SrPd₂As₂ in comparison with the non-superconducting CeMg₂Si₂-type phase BaPd₂As₂. Besides, the same properties were compared for CeMg₂Si₂- and ThCr₂Si₂-type polymorphs of BaPd₂As₂. We found that all these phases are mechanically stable and belong to soft materials with low hardness. The near-Fermi region is formed by the valence states of the blocks [Pd₂As₂] with decisive contributions of Pd 4d states. The values of N(E _F) increase in the sequence: CaPd₂As₂ < SrPd₂As₂ < BaPd₂As₂, i.e. in the reverse sequence relative to the transition temperatures T _C. Thus, the change in T _C cannot be explained by the electronic factor, i.e. by the simple correlation T _C～N(E _F). Most likely the decrease in T _C in the sequence CaPd₂As₂ → SrPd₂As₂ and the absence of a superconducting transition in BaPd₂As₂ are related to the structural factors and the peculiarities of the electron–phonon coupling mechanism.     

Si_2N_2O-Al_2O_3-La_2O_3和Si_2N_2O-Al_2O_3-CaO系统的亚固相关系

本文给出了 Si_2N_2O-Al_2O_3-La_2O_3和 Si_2N_2O-Al_2O_3-CaO 系统的亚固相图。实验结果表明:在 Si_2N_2O-Al_2O_3-CaO 系统中有一个未知结构的新化合物 CaO·Si_2N_2O,在3CaO·Si_2N_2O 和3CaO·Al_2O_3两化合物之间形成连续立方固溶体。而 Si_2N_2O-Al_2O_3-La_2O_3系统中则没有发现新化合物。在两个系统的富 Si_2N_2O区,过量的 Si_2N_2O 与 La_2O_3和 CaO 分别反应形成 Si_3N_4与 La_(10)[SiO_4]_(?)N_2(H-相)(和 CaSiO_3。所研究的这两个三元系统中,分别形成了如下几个四元相容性区。在 Si_2N_2O-Al_2O_3-La_2O_3系统内有:H-Si_3N_4-La_2O_3·Si_2N_2O-La_2O_3·Al_2O_3;H-Si_3N_4-La_2O_3·Al_2O_3-La_2O_3·11 Al_2O_3;H-Si_3N_4-La_2O_3·11 Al_2O_3-Al_2O_3;H-Si_3N_4-Al_2O_3-O′s.s;H-Si_3N_4-O′s.s-Si_2N_2O在 Si_2N_2O-Al_2O_3-CaO 系统内有:Si_3N_4-CaSiO_3-CaO·Si_2N_2O-3CaO·Al_2O_3;Si_3N_3-CaSiO_3-3CaO·Al_2O_3-2CaO·Al_2O_3·SiO_(?);Si_(?)N_(?)-CaSiO_3-2CaO·Al_2O_3·SiO_2-Al_2O_3;Si_3N_4-CaSiO_3-Al_2O_(?)-O′s.s;Si_3N_4-CaSiO_3-O′s.s-Si_(?)N_(?)O