Coupling of conductive, convective and radiative heat transfer in Czochralski crystal growth process

This paper studies the conjugate problems of fluid flow and energy transport (involving conduction, convection and radiation heat transfer) within a material changing its phase. The analysis focuses on the Czochralski crystal growth process. The solidifying material is treated as a pure substance with constant material properties. The solution of the resulting 3-D, axisymmetric, non-linear problem is obtained iteratively using the commercial CFD package Fluent. The algorithm employed here treats each subdomain of the system separately, i.e. the liquid and solid phases of the solidified material, as well as the inertial gas surrounding both phases.

Results of a test case shows the velocity field and temperature distribution within a simple system employed for the growth of a single silicon crystal.     

Growth and scintillation properties of Yb doped aluminate, vanadate and silicate single crystals

For the purpose of quick screening for charge transfer (CT) transitions of Yb³⁺ in various hosts, (Lu_1−xYb_x)₃Al₅O₁₂ (Yb:LuAG) with x=0.05, 0.15, 0.30 and (Y_1−xYb_x)AlO₃ (Yb:YAP) with x=0.05, 0.10, 0.30 were grown by the micro-pulling-down method. (Y,Yb)VO₄ with strong wetting was grown by edge defined film-fed growth method and materials, which require moderate temperature gradient, such as Ca₈(La,Yb)₂(PO₄)₆O₂ and (Gd,Yb)₂SiO₅ were grown by Czochralski method. Strong dependence of the CT luminescence decay time and intensity on temperature was observed for Yb-doped LuAG and YAP. Super fast decay with 0.85 ns decay time was observed in Yb(30%) doped YAP at room temperature. Though the emission intensity is weak at room temperature, it exceeds several times that of PbWO₄. In addition, CT luminescence of Yb:YAP occurs at longer wavelength than in BaF₂, which enables the usage of glass-based photomultiplier for the detection. In addition, higher stopping power will be expected due to the higher density host compared with BaF₂.     

Equilibrium segregation coefficient and solid solubility of B in Czochralski Ge crystal growth

This paper reports reevaluated results of the segregation coefficient of boron (B) and a solid solubility of B at melting point of Ge. The crystal growth was carried out from a B-saturated Ge melt, and a solid solubility of B in Ge crystal was estimated to be 3 ± 0.5 × 10¹⁸ cm^− 3. The effective segregation coefficients of 4 and 2.5 were obtained at pulling rates of 10 and 30 mm/h, respectively. An equilibrium segregation coefficient was estimated to be 6.2 and it was considerably smaller than those reported previously. Therefore, boron atoms in Ge melt easily interact with residual O atoms existing in the Ge melt, resulting in various values reported of the segregation coefficient. A phase diagram of Ge and B at Ge-rich region estimated from obtained experimental results is proposed.     

Yb0.03Y0.19Gd0.78VO4晶体的生长和性能

液相合成了Yb∶YGdVO4多晶料,采用中频感应加热Czochralski法生长了Yb0.03Y0.19Gd0.78VO4晶体.用浮力法测定其密度为5.29g/cm3,X射线粉末衍射分析表明它的结构与YVO4和GdVO4的晶体结构相同,并计算出了它的晶胞参数为a0=b0=0.7191nm,c0=0.6329nm.用激光脉冲法测量了晶体的热扩散系数,比较了晶体a轴和c轴的热扩散系数随温度的变化关系.实验表明Yb0.03Y0.19Gd0.78VO4晶体有希望适合作为LD泵浦的激光晶体材料.     

Growth and characterization of Yb doped garnet crystals for scintillator application

Several concentration of Yb-doped Lu₃Al₅O₁₂ (Yb:LuAG) and Lu₃Ga₅O₁₂ (Yb:LGG) single crystals were grown by the micro-pulling-down method. The crystals were seeded-grown in the 1 1 1 direction and transparent and crack free crystals were obtained. Photoluminescence spectra and decay kinetics of these crystals were studied. Charge transfer luminescence of Yb³⁺ was observed in both crystals. Mean decay time of about 25 ns at 90 K and strong thermal quenching at room temperature was measured for Yb 5%:LuAG. Radioluminescence intensity was compared to the standard BGO sample.     

Thermal conductivity of Nd3+ and Yb3+ doped laser materials measured by using the thermal lens technique

Thermal conductivity measurements in various well-known Yb³⁺ and Nd³⁺ doped laser materials are performed by using an all-optical pump–probe approach based on the pump-induced thermal lens phenomenon. The derived values agree well with the existing data and open the way to more extensive and more complete investigations.     

Growth, thermal and optical properties of Yb:GdYAl3(BO3)4 crystal

Single crystal of Yb:GdYAl₃(BO₃)₄(Yb:GdYAB) has been grown by the flux method. The structure of Yb:GdYAB crystal has been determined by X-ray diffraction analysis. The experiment show that the crystal has the same structure as that of YAl₃(BO₃)₄ crystal and its unit cell constants have been measured to be a = 9.30146 Å, c = 7.24164 Å, Vol = 542.59 Å³. The absorption and fluorescence spectrum of Yb:GdYAl₃(BO₃)₄ crystal have also been measured at room temperature. In the absorption spectra, there are two absorption bands at 938 nm and 974 nm, respectively, which is suitable for InGaAs diode laser pumping. In the fluorescence spectra, there are two fluorescence peaks at 992 and 1040 nm. The thermal properties of Yb:GdYAl₃(BO₃)₄ crystal have been studied for the first time. The thermal expansion coefficient along c-axis is almost 5.4 times larger than that along a-axis. The specific heat of the crystal has been measured to be 0.77 J/g °C at room temperature. The calculated thermal conductivity is 5.26 Wm⁻¹ K⁻¹ along a-direction.     

Controlled growth and properties of Pb doped ZnO nanodisks

Pb²⁺ doped zinc oxide nanodisks have been grown through a facile solvothermal method. The nanodisks have perfect hexagonal shape with about 1 μm in diagonal and 100 nm in thickness. The existence of Pb²⁺ is vital to the formation of the disk morphology. Room temperature photoluminescence measurements show two photoluminescence peaks centered at 518 and 648 nm. The mechanism of the nanodisk growth is also discussed.     

Effect of Ag nanoparticles on the radiative properties of tellurite glasses doped with Er3+, Yb3+ and Tm3+ ions

The present work is devoted to the characterization of the thermal and spectroscopic properties of tellurite glasses, codoped with Er³⁺, Yb³⁺ and Tm³⁺ rare-earth ions and silver nanoparticles (NPs). The techniques used for this investigation were UV–visible and infrared absorption, time-resolved luminescence and thermal lens. Time-resolved luminescence studies indicate efficient Yb³⁺ → Er³⁺ and Yb³⁺ → Tm³⁺ energy transfers and intense Er³⁺ and Tm³⁺ mid-infrared emissions around 1550 nm and 1860 nm, respectively. The presence NPs is found to increase the thermal diffusivity of the materials and to shorten the mid-infrared emission lifetime of both the Er³⁺ and Tm³⁺ ions.     

Thermal conductivity of diamond/Ag composites with chromium carbide coated diamonds for the building materials of high power modules

Abstract

This paper reports on a study of the preparation and characterisation of diamond/Ag composites for the building materials of high power modules. The Cr₇C₃ coated diamond particles are utilised to improve the interfacial bonding between the Ag and diamond and composites are prepared by hot pressing technique. The characteristics of Cr₇C₃ coating layers were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The results show that the Cr₇C₃ coatings on the diamonds result in a strong interfacial bonding and a greatly enhanced thermal conductivity of the composites. A largely enhanced thermal conductivity of 768 W m^?1 K^?1 is obtained in Cr₇C₃ coated composites, which increases 168% relative to that of uncoated composites at 65% diamond volume fraction. The measured thermal conductivity agrees reasonably well with the predictions by a differential effective-medium (DEM) model.     

Development of gradient microstructure in the lattice structure of AlSi10Mg alloy fabricated by selective laser melting

To identify the microstructural features of the lattice structures of Al alloys built via the selective laser melting(SLM)process,AlSil OMg alloy with a body-centered cubic(BCC)-type lattice structure was prepared.Characteristic microstructures comprising melt pools with several columnarα-Al phases with<001>orientations along the elongation direction and surrounded by eutectic Si particles were observed at all portions of the built lattice structure.In the node portions of the lattice structure,a gradient microstructure(continuous change in microstructure)was observed.The columnarα-Al phases were observed near the top surface of the node portion,whereas they became coarser and more equiaxed near the bottom surface,resulting in softening localized near the bottom surface.In the strut portions of the lattice structure,the columnarα-Al phases were elongated along the inclined direction of struts.This trend was more prevalent near the bottom surface.Theα-Al phases became coarser and more equiaxed near the bottom surface as well.The aforementioned results were the basis of a discussion of the development of the gradient microstructure in lattice-structured Al alloys during the SLM process in terms of thermal conductivities at the boundaries between the manufactured(locally melted and rapidly solidified)portions and adjacent(unmelted)alloy powder.     

Luminous properties of SrGa2S3Se phosphors doped with Eu for LEDs application

Thio-selenide phosphor, SrGa₂SeS₃:Eu²⁺, was prepared using a solid-state chemical reaction method without the addition of toxic gases or other excess materials. The synthesized phosphor displayed a broad excitation band, which is suitable for blue or NUV LED applications and emits green light (528 nm). The samples were also excited with various wavelength emitting diodes (410 nm, 425 nm, and 455 nm) to assess their potential use as phosphors for white LED applications. The LED fabricated with the synthesized phosphor produced bluish green light using NUV LED with a CIE-1931 coordinate, Tc and Ra of (0.2309, 0.3436), 11732.3 K and 18.2, respectively.     

Crystal growth and characterization of europium doped KCaI3, a high light yield scintillator

The presented study reports on the spectroscopic characteristics of a new high performance scintillation material KCaI₃:Eu. The growth of ∅ 17 mm boules using the Bridgman–Stockbarger method in fused silica ampoules is demonstrated to produce yellow tinted, yet transparent single crystals suitable for use in spectroscopic applications due to very promising performance. Scintillation light yield of 72,000 ± 3000 ph/MeV and energy resolution of 3% (FWHM) at 662 keV and 6.1% at 122 keV was obtained from small single crystals of approximately 15 mm³. For a much larger 3.8 cm³ detector, 4.4% and 7.3% for the same energy. Proportionality of the scintillation response to the energy of ionizing radiation is within 96% of the ideal response over an energy range of 14–662 keV. The high light yield and energy resolution of KCaI₃:Eu make it suitable for potential use in domestic security applications requiring radionuclide identification.     

High-throughput screening of critical size of grain growth in gradient structured nickel

Nanocrystalline metals with high Gibbs free energy have a strong tendency towards thermally driven grain growth,thus understanding the critical size or temperature of grain growth is vital for their applications.The investigations of thermal stability were usually conducted on the materials with a homo-geneous structure;however,these methods are time-consuming and expensive.In the present work,we reveal a high-throughput experimental strategy to characterize the size-dependent thermal stability via annealing the gradient structured Ni.Employing this method,the critical size of grain growth(dc)at a given annealing temperature was rapidly determined.The critical size of grain growth was～95 nm when annealed at 503 K for 3 h,which is consistent with the value reported in the homogeneous structured Ni.Furthermore,this critical size was found to be identical in three types of gradient structured Ni,i.e.,independent on the gradient structure.Our present work demonstrates a high-throughput strategy for exploring the critical size of grain growth and size-dependent thermal stability of metals.     

Crystal growth and thermal neutron scintillation response of Ce doped KLiYF5

K⁶Li(Y_1−xCe_x)F₅ (x = 0.003, 0.02) single crystals were grown from the melt using the precise atmosphere control type Micro-Pulling-Down (μ-PD) method to examine their potential as a new thermal neutron scintillators. The grown crystals were single-phase materials as confirmed by XRD. The crystals demonstrated 40-60% transmittance above 320 nm and Ce³⁺ 5d-4f luminescence observed around 340 nm when exited by α-ray. The radio luminescence measurements under thermal neutron excitation (²⁵²Cf) demonstrated the light yield of 890 (Ph/neutron) and the decay time excited by α-ray exhibited 20 and 259 ns.     

Grain growth and stabilisation of nanostructured aluminium at high temperatures: review

Nanostructured (NS) materials have a large stored energy due to their large grain boundary area and thus tend to be unstable with respect to grain growth during high temperature annealing or deformation. This problem can limit the application of NS materials at high temperatures (>0·5T_m, absolute melting temperature), especially Al alloys owing to their low melting points. Restoration processes and grain growth in NS Al based materials are critically reviewed, with emphasis on nanostructure grain stabilisation at high temperatures. The mechanisms of normal and abnormal grain growth during isothermal annealing are presented, followed by consideration of thermal stabilisation by the addition of solute atoms/impurities and/or dispersion of second phase particles. Grain growth is significantly facilitated by applying deformation at elevated temperatures during preparation or further processing of semifinished NS materials. The dynamic restoration processes, dynamic grain growth and dynamic particle coarsening are addressed in NS Al. Finally, grain growth during consolidation of nanocrystalline powders (one of the principal methods to fabricate bulk NS Al) is presented, and the effects of processing parameters on grain size stabilisation are discussed.     

Spectral characterization of Yb-doped silica layers for high power laser applications

Thick silica layers, doped with rare-earth elements are required as active media for high power waveguide lasers and amplifiers. In this work, Yb/Al-codoped silica particles were deposited on pure silica wafers, followed by high temperature sintering and post-sinter laser annealing treatment. The optical properties of the layers were monitored at different stages of the process using transmission spectrometry in the near IR to UV range, micro-Raman spectroscopy, fluorescence spectrum, and decay measurements. Evolution of the Yb³⁺ ion fluorescence and stabilization of the Si:O bonds as a result of the sintering process were observed.Measurements of 30 μm thick layers showed high Yb absorption of 500 dB/m at 980 nm. The fluorescence lifetime was close to 1 ms and the propagation loss was less than 20 dB/m at 633 nm, currently limited by the measurement system. The results show that a potential material for high power applications has been achieved.     

Introduction of porous structure: A feasible and promising method for improving thermoelectric performance of Bi2Te3 based bulks

The porous p-type Bi_0.4Sb_1.6Te₃ bulks containing irregularly and randomly oriented pores were obtained by artificially controlling the relative density of sintered samples during resistance pressing sintering process. It is demonstrated that the thermoelectric performances are significantly affected by the porous structure, especially for the electrical and thermal conductivity due to the enhanced carrier scattering and phonon scattering. The increasing porosity resulted in the obvious decrease in electrical and thermal conductivity, and little change in Seebeck coefficients. It is encouraging that the reduction of thermal conductivity can compensate for the deterioration of electrical performance, leading to the enhancement in thermoelectric figure of merit (ZT). The maximum ZT value of 1.0 was obtained for the sample with a relative density of 90% at 333?K. Unfortunately, the increase in porosity also brought in obvious degradations in Vickers hardness from 51.71 to 27.74?HV. It is worth mentioning that although the Vickers hardness of the sample with a relative density of 90% decreased to 40.12?HV, it was still about twice as high as that of the zone melting sample (21.25?HV). To summarize, introducing pores structure into bulks properly not only enhances the ZT value of Bi₂Te₃ based alloys, but also reduces the use of raw materials and saves production cost.     

TeO2 liquid phase: Viscosity measurements and evaluation of the thermal conductivity from crystal growth experiments

Current applications of paratellurite TeO₂ in optics and nuclear physics require improving the yield and optical quality of synthesized single crystals. Modelling of the growth process is a useful tool for such purpose, however, involving the knowledge of several thermodynamic parameters of both solid and liquid phase of the compound. This work describes the determination of two main unknown ones, namely dynamic viscosity η and thermal conductivity λ_l of the liquid phase. Measurements of η are performed by means of a specifically designed apparatus; over a 40 K temperature interval above the melting point we find a mean value of 0.028 Pa.s. This data is used in commercial software to depict the evolution of the solid-liquid interface in our Bridgman growth set-up. Comparison of the distribution of defects observed in grown ingots with the results of modelling allows estimating λ_l as lying in the range 3.50-3.75 W m⁻¹ K⁻¹.