Tuned photoluminescence from Si-implanted SiO2 films with rapid and conventional thermal annealing

In this study, by using a conventional thermal annealing (CTA), the obviously near-infrared shift and intensity amplification of room-temperature photoluminescence (PL) spectrum could be observed from the 3 × 10¹⁶ cm⁻² Si⁺-implanted 400-nm-thick SiO₂ films after rapid thermal annealing (RTA) at 1150 °C in dry nitrogen. For isothermal RTA durations ≥20 s at the heating rate of 100 °C/s, the PL peaks from the only RTA-treated films were detected around 1.7 eV and, for 1050 °C CTA durations between 1 and 3 h, no significant PL could be found from the only CTA-treated films. However, when annealing the RTA-treated films with the CTA for only 1 h, then, we varied the terminal PL-peak from 1.7 to 1.5 eV and obviously increased their respective intensities from the films. These results are attributed to the variation of silicon nano-crystals embedded in SiO₂ film.     

Photocatalytic degradation of formaldehyde by nanostructured TiO2 composite films

Interest in the photocatalytic oxidation of formaldehyde from contaminated wastewater is growing rapidly. The photocatalytic activity of the nanocrystalline Fe³⁺/F^? co-doped TiO₂–SiO₂ composite film for the degradation of formaldehyde solution under visible light was discussed in this study. The films were characterised by field emission scanning electron microscopy (FE-SEM) equipped with energy-dispersive spectroscopy, X-ray diffraction (XRD), BET surface area, UV–Vis absorption spectroscopy, and photoluminescence spectroscopy. The FE-SEM results revealed that the Fe³⁺/F^? co-doped TiO₂–SiO₂ film was composed of uniform round-like nanoparticles or aggregates with the size range of 5–10 nm. The XRD results indicated that only the anatase phase was observed in the film. Compared with a pure TiO₂ film and a singly modified TiO₂ film, the Fe³⁺/F^? co-doped TiO₂–SiO₂ composite film showed the best photocatalytic properties due to its strong visible light adsorption and diminished electrons-holes recombination.     

Studies on polycrystalline Cd0.96Zn0.04Te thin films prepared by vacuum evaporation

Polycrystalline Cd_0.96Zn_0.04Te thin films are deposited onto glass substrates (Corning 7059) kept at room temperature by vacuum evaporation. The films exhibit zinc blende structure with predominant (1 1 1) orientation. The rms roughness of the films evaluated by atomic force microscope is 3.7 nm. The band gap energy of the films measured by optical transmittance measurement is 1.539 eV. The photoluminescence (PL) spectrum of the films shows intense emission due to free and bound exciton recombination and no emission associated with crystal imperfection and PL line shapes give indications of the high quality of the layers. These films have been implanted with properly mass analyzed Boron ions (¹⁰B⁺) and the effect of implantation has been analyzed by X-ray diffraction, Raman scattering and optical transmittance measurements and the results are explained on the basis of the implantation induced surface roughness and lattice disorder.     

New intelligent multifunctional SiO2/VO2 composite films with enhanced infrared light regulation performance,solar modulation capability,and superhydrophobicity

Abstract

Highly transparent, energy-saving, and superhydrophobic nanostructured SiO₂/VO₂ composite films have been fabricated using a sol–gel method. These composite films are composed of an underlying infrared (IR)-regulating VO₂ layer and a top protective layer that consists of SiO₂ nanoparticles. Experimental results showed that the composite structure could enhance the IR light regulation performance, solar modulation capability, and hydrophobicity of the pristine VO₂ layer. The transmittance of the composite films in visible region (T_lum) was higher than 60%, which was sufficient to meet the requirements of glass lighting. Compared with pristine VO₂ films and tungsten-doped VO₂ film, the near IR control capability of the composite films was enhanced by 13.9% and 22.1%, respectively, whereas their solar modulation capability was enhanced by 10.9% and 22.9%, respectively. The water contact angles of the SiO₂/VO₂ composite films were over 150°, indicating superhydrophobicity. The transparent superhydrophobic surface exhibited a high stability toward illumination as all the films retained their initial superhydrophobicity even after exposure to 365 nm light with an intensity of 160 mW^.cm^?2 for 10 h. In addition, the films possessed anti-oxidation and anti-acid properties. These characteristics are highly advantageous for intelligent windows or solar cell applications, given that they can provide surfaces with anti-fogging, rainproofing, and self-cleaning effects. Our technique offers a simple and low-cost solution to the development of stable and visible light transparent superhydrophobic surfaces for industrial applications.     

Origin of photoluminescence peaks in Ge–SiO2 thin films

Ge–SiO₂ thin films were prepared by the RF magnetron sputtering technique on p–Si substrates from a Ge–SiO₂ composite target. The asdeposited films were annealed in the temperature range of 300–10000C under nitrogen ambience. The structure of films was evaluated by X–ray diffraction, X-ray photoemission spectroscopy and Fourier transform infrared absorption spectroscopy. Results show that the content of Ge and its oxides in thefilms change with increasing annealing temperature (Ta), the photoluminescence (PL) characteristics are closely dependent on the contents of Ge and its oxides in SiO₂ matrix. The dependence observed strongly suggests that the PL peak at 394 nm is related to the existenceof GeO and 580 nm to that of Ge nanocrystal (nc-Ge) in the films. © 2002 Elsevier Science Ltd. All rights reserved.     

Enhanced photoluminescence of CaTiO3:Pr phosphor films deposited on SiO2 buffered Si substrates

CaTiO₃:Pr³⁺ films have been prepared by pulsed-laser deposition method on SiO₂-buffered Si substrates, and their microstructure and photoluminescence properties have been compared with those of the films deposited directly on bare Si substrates. The SiO₂ buffer layers were prepared using thermal oxidization and HF-etching. Photoluminescence intensities of CaTiO₃:Pr³⁺ films on the SiO₂-buffered Si substrates are significantly higher (up to 800%) than those of the films on bare Si substrates, which is attributed to the low refractive index and low light absorption of the SiO₂ buffer layer. This study reveals that the presence of the buffer layer is effective in improving the red emission brightness of CaTiO₃:Pr³⁺ films without sacrificing the surface roughness.     

Synthesis of monodisperse spherical core-shell SiO2-SrAl2Si2O8: Eu2+ phosphors by hydrothermal homogeneous precipitation method

Abstract

Nanocrystalline SrAl₂Si₂O₈ :Eu²⁺ phosphor layers were coated on nonaggregated, monodisperse and spherical SiO₂ particles using a hydrothermal homogeneous precipitation. After annealing at 1100 °C, core-shell SiO₂@SrAl₂Si₂O₈ :Eu²⁺ particles were obtained. They were characterized with x-ray diffraction (XRD), scanning electron microscopy, transmission electron microscopy and photoluminescence techniques. XRD analysis confirmed the formation of SiO₂ @SrAl₂Si₂O₈ :Eu²⁺ particles; it indicated that the SrAl₂Si₂O₈ :Eu²⁺ shells on SiO₂ particles consisted of hexagonal crystallites. The core-shell phosphors obtained are well-dispersed submicron spherical particles with a narrow size distribution. The thickness of the coated layer is approximately 20–40 nm. Under ultraviolet excitation (361 nm), the particles emit blue light at about 440 nm due to the Eu²⁺ ions in their shells.     

Nanorods of white light emitting Sr2SiO4:Eu2+: microemulsion-based synthesis,EPR, photoluminescence,and thermoluminescence studies

White light emitting Sr₂SiO₄:Eu²⁺ nanoparticles were prepared using reverse micellar route using Tergitol as a surfactant. The systems were characterised by X-ray diffraction, scanning electron microscopy (SEM), photoluminescence, thermoluminescence (TL), and electron paramagnetic resonance (EPR) spectroscopy. SEM shows the formation of silicate nanorods. Two emission bands of bluish-green at 490 nm (S(I)) and of orange-red at 605 nm (S(II)) were observed. The two emission bands are assigned to the 4f–5d transition of Eu²⁺ ions in two different cation sites in α′-Sr₂SiO₄ orthorhombic lattices. Gamma-irradiated Sr₂SiO₄:Eu showed the presence of three TL glow peaks at 437, 487 K and weak peak at 540 K; however, no glow was observed in the undoped sample. Reduction of Eu³⁺ to Eu²⁺ is confirmed by EPR spectroscopy.     

Red-emitting α-SrO·3B2O3:Sm2+ phosphor: an innovative application for increasing color quality and luminous flux of remote phosphor white LEDs

Abstract

By adding red-emitting α-SrO·3B₂O₃:Sm²⁺ phosphor and SiO₂ co-doping particles to yellow-emitting YAG:Ce phosphor compound, a novel method for improving lighting performance of white LEDs with remote phosphor structure, which have an average correlated color temperature (CCT) of 5600–8500 K, is proposed and demonstrated. By varying α-SrO·3B₂O₃:Sm²⁺ concentration from 2 to 30% and maintaining 5% SiO₂, the obtained results indicated that color rendering index (CRI), color quality scale (CQS), and luminous flux can be increased significantly. Moreover, the Mie-scattering theory is employed to verify the scattering properties, which have an effect on the enhancement of color quality and luminous flux. The results prove a prospective practical solution for manufacturing remote phosphor white LED (RP-WLED) having higher color quality and luminous flux.     

Singlet‐Triplet Transition in the C60 2− Dianion

Abstract

The C₆₀ complexes with decamethylcobaltocene: (Cp*₂Co)₂C₆₀(C₆H₄Cl₂, C₆H₅CN)₂ (1) and [K · (18‐crown‐6)]₂ · C₆₀ · (DMF)₄ (2) have been obtained as single crystals by the diffusion method. The IR‐ and UV‐VIS‐NIR‐spectra justify the formation of the C₆₀ ^2? dianions in these salts. EPR measurements show that the low temperature signals of 1 in the 4–140 K range and 2 in the 4–60 K range have intensity corresponding only to 0.4% and 3.5% from total C₆₀. Because of this, most of the complexes are EPR silent, and, consequently, C₆₀ ^2? has a diamagnetic singlet (S = 0) state in these temperature ranges. The appearance of a broad EPR signal in the spectum of 1 above 140 K and 2 above ～60 K is assigned to a thermal population of a close lying excited triplet (S = 1) state. The singlet–triplet energy gap for C₆₀ ^2? in solid 1 and 2 was estimated to be 730 ± 10 and 300 ± 10 cm^?1.     

Synthesis and Upconversion Emission of β-Ca2SiO4: (Er3+, Yb3+)

The β-Ca₂SiO₄: (Er³⁺, Yb³⁺) powders were synthesized by the simple solid-state process. The obtained samples were given characterizations of X-ray diffraction, Fourier-transform infrared, transmission electron microscopy, and luminescence. The samples have monoclinic parawollastonite phase and irregular morphology. Under the excitation at 980 nm, the obtained β-Ca₂SiO₄: (Er³⁺, Yb³⁺) samples show the intense upconversion (UC) emission. The dosage of Yb³⁺ has obvious influence on the emission intensities of β-Ca₂SiO₄: (Er³⁺, Yb³⁺) samples. Also, the emission intensity increases gradually with the increasing pump power from 350 to 600 mW. On the basis of luminescent properties of samples, we can conclude that the UC emission originates from the biphotonic process.     

New Molecular Complex of Fullerene C60 with Porphyrin Dimer [FeTPP]2O: Synthesis and Crystal Structure

Abstract

New molecular complex of C₆₀ with covalently linked (Fe^IIITPP)₂O · C₆₀ dimer has been obtained. The complex has isolated packing of fullerenes in which fullerene molecule is embraced in a pocket built by porphyrins. (Fe^IIITPP)₂O preserves its initial geometry in the complex. The Fe···C(C₆₀) contacts are in the 3.239–3.513 Å range indicating the absence of Fe–C₆₀ coordination. This results in the similarity of the EPR spectra of the complex and parent (Fe^IIITPP)₂O.     

Use of oxygen isotope to study the transport mechanism during high temperature oxide scale growth

Abstract

The examination of high temperature (HT) oxide scale growth mechanisms was performed using secondary ion mass spectrometry (SIMS) and secondary neutral mass spectrometry (SNMS), in conjunction with ¹⁶O₂/¹⁸O₂ HT oxidation experiments. Cr₂O₃, NiO, ZrO₂ and Al₂O₃ were studied because they constitute excellent representative thermally grown oxide scales: they grow by cationic diffusion (Cr₂O₃, NiO), anionic diffusion (ZrO₂) or mixed anionic-cationic diffusion (Al₂O₃). The oxidation tests were performed first in ¹⁶O₂ and subsequently in ¹⁸O₂ at several temperatures (600–1000°C for NiO, 600°C for ZrO₂, 1000°C for Cr₂O₃ and 1100°C for Al₂O₃). The oxygen isotope distribution observed by SIMS and SNMS profiles are discussed and related with the HT oxidation mechanisms proposed in the literature.     

Luminescence mechanisms of organic/inorganic hybrid organic light-emitting devices fabricated utilizing a Zn2SiO4:Mn color-conversion layer

Zn₂SiO₄:Mn phosphor layers used in this study were synthesized by using the sol-gel method and printed on the glass substrates by using a vehicle solution and a heating process. Organic/inorganic hybrid organic light-emitting devices (OLEDs) utilizing a Zn₂SiO₄:Mn color-conversion layer were fabricated. X-ray diffraction data for the synthesized Zn₂SiO₄:Mn phosphor films showed that the Zn ions in the phosphor were substituted into Mn ions. The electroluminescence (EL) spectrum of the deep blue OLEDs showed that a dominant peak at 461 nm appeared. The photoluminescence spectrum for the Zn₂SiO₄:Mn phosphor layer by using a 470 nm excitation source showed that a dominant peak at 527 nm appeared, which originated from the ⁴T₁-⁶A₁ transitions of Mn ions. The appearance of the peak around 527 nm of the EL spectra for the OLEDs fabricated utilizing a Zn₂SiO₄:Mn phosphor layer demonstrated that the emitted blue color from the deep blue OLEDs was converted into a green color due to the existence of the color-conversion layer. The luminescence mechanisms of organic/inorganic hybrid OLEDs fabricated utilizing a Zn₂SiO₄:Mn color-conversion layer are described on the basis of the EL and PL spectra.     

Microstructures and photo-catalytic properties of B3+ and F− co-doped TiO2 films

The nano-crystalline B³⁺ and F^? co-doped titanium dioxide films were successfully prepared by the improved sol–gel process. The as-prepared specimens were characterised using X-ray diffraction (XRD), high-resolution field emission scanning electron microscopy (FE-SEM), the Brunauer–Emmett–Teller (BET) surface area, X-ray photo-electron spectroscopy, photoluminescence spectra and UV–Vis diffuse reflectance spectroscopy. The photo-catalytic activities of the films were evaluated by degradation of an organic dye in aqueous solution. The results of XRD, FE-SEM and BET analysis indicated that the TiO₂ films were composed of nano-particles. B³⁺ and F^? co-doping could obviously not only suppress the formation of brookite phase but also inhibit the transformation of anatase to rutile at high temperature. Diffuse reflectance measurements showed that co-doping could clearly extend the absorbance spectra of TiO₂ into visible region. Compared with pure TiO₂, B³⁺ doped or F^? doped TiO₂ film, the B³⁺ and F^? co-doped TiO₂ film exhibited excellent photo-catalytic activity. It is believed that the surface microstructure of the films and the doping methods of the two ions are responsible for improving the photo-catalytic activity.     

Surface modification of the (Y,Gd)BO3:Eu phosphor by dual-coating of oxide nano-particles

The surface of (Y,Gd)BO₃:Eu³⁺ phosphor, red-emitting source in the plasma display panel (PDP), was dual-coated with SiO₂ and Al₂O₃ nano-particles. The surface modification of the phosphor was performed by a modified sol-gel method using the colloidal alumina and silica as surface coating precursors. We observed the oxide nano-particles on the surface of the single coated and the dual-coated phosphors and it was found that the luminance intensity was increased in the photoluminescence (PL) by a suppression of the nonradiative recombination via surface defects. The experimental results suggest that the surface modification of phosphors with nano-particles of the oxides leads to an increase in the luminance intensity of phosphors in the PDP (plasma display panel) and the gas discharge lamps.     

Composite SiOx/fluorocarbon plasma polymer films prepared by r.f. magnetron sputtering of SiO2 and PTFE

Composite films SiO_x/fluorocarbon plasma polymers were prepared by r.f. sputtering from two balanced magnetrons equipped with polytetrafluoroethylene (PTFE) and silica (SiO₂) targets. Argon was used as the working gas. The obtained films were characterised by means of XPS, RBS, FTIR, AFM, TEM, microhardness and static contact angle measurements. The obtained SiO_x/fluorocarbon plasma polymer films reveal different wettability (static contact angle of water ranges from 68° to 40°) and hardness (ranges from 720 to 3200 N/mm²) when the volume fraction ratio (filling factor) of SiO₂ changes from 0.01 to 0.7. The concentration of elements determined by RBS/ERDA varies strongly over this range of filling factors. The heterogeneous structure of the composite films is indicated by TEM at high SiO_x contents.     

Study of SiO2 encapsulation for aluminum and phosphorus implant activation in 4H-SiC

SiO₂ encapsulation layer was studied for aluminum (Al) and phosphorus (P) implant activation anneal in 4H-SiC. Both Al^- and P⁺ implantation were carried out at 650 °C followed by activation anneal at 1400 °C to 1500 °C. X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and four-point-probe (FPP) measurements were performed to examine surface stoichiometry, roughness, and sheet resistance of the implanted SiC regions. The effect of using SiO₂ encapsulation layer for Al implant activation on the performance of 4H-SiC p-i-n diodes with both p-type active region and JTE region formed by Al implantation was also investigated. Forward and reverse characteristics including saturation current density J₀, ideality factor η, reverser leakage current density J_L and threshold breakdown voltage V_BR have been extracted. The results show that SiO₂ encapsulation effectively protects the SiC surface during high temperature implant activation for both Al^- and P⁺.     

Preparation of nitrogen co-doped SiO2/TiO2 thin films on ceramic with enhanced photocatalytic activity under visible-light irradiation

In this study, we have successfully deposited N-doped SiO₂/TiO₂ thin films on ceramic tile substrates by sol–gel method for auto cleaning purpose. After dip coating and annealing process the film was transparent, smooth and had a strong adhesion on the ceramic tile surface. The synthesised catalysts were then characterised by using several analytical techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscope (AFM) and UV-vis absorption spectroscopy (UV-vis). The analytical results revealed that the optical response of the synthesised N-doped SiO₂/TiO₂ thin films was shifted from the ultraviolet to the visible light region. The nitrogen substituted some of the lattice oxygen atoms. The surface area of co-doped catalyst increased, and its photocatalytic efficiency was enhanced. The photocatalytic tests indicated that nitrogen co-doped SiO₂/TiO₂ thin films demonstrated higher than of the SiO₂/TiO₂ activity in decolouring of methylene blue under visible light. The enhanced photocatalytic activity was attributed to an increasing of the surface area and a forming of more hydroxyl groups in the doped catalyst.     

Low-temperature synthesis of Y2SiO5:Eu powders using mesoporous silica and their luminescence properties

This paper reports the synthesis of Eu³⁺ ions-doped Y₂SiO₅ (Y₂SiO₅:Eu³⁺) powders by mesoporous template route. Using mesoporous silica SBA-15 as silica source, Y₂SiO₅:Eu³⁺ powders were prepared by solid-state reaction at a calcination temperature of 1300 °C without fluxes. The prepared Y₂SiO₅:Eu³⁺ powders were characterized by X-ray diffraction, scanning electron microscope, nitrogen adsorption-desorption isotherms, and photoluminescence spectroscopy. The results show that the crystalline Y₂SiO₅:Eu³⁺ particles are dense and have a morphology similar to SBA-15. The low calcination temperature is attributed to the high reactive activity of SBA-15 with large surface area and non-crystalline structure. The Y₂SiO₅:Eu³⁺ powders prepared at a low calcination temperature show luminescence properties similar to the reported results of Eu³⁺ doped-Y₂SiO₅ samples prepared at high temperatures.