Temperature dependence of I-V characteristics and performance parameters of silicon solar cell

The temperature dependence of open-circuit voltage (V_oc) and curve factor (CF) of a silicon solar cell has been investigated in temperature range 295-320 K. The rate of decrease of V_oc with temperature (T) is controlled by the values of the band gap energy (E_g), shunt resistance (R_sh) and their rates of change with T. We have found that R_sh decreases nearly linearly with T and its affect on dV_oc/dT is significant for cells having smaller R_sh values. Series resistance also changes nearly linearly with voltage. CF depends not only on the value of R_s and other parameters but also on the rate of change of R_s with voltage. The rate of decrease of R_s with voltage and T are important to estimate the value of CF and its decrease with temperature accurately.     

Gettering effects by aluminum upon the dark and illuminated I–V characteristics of N–P–P silicon solar cells

Impurity gettering is an essential process step in silicon solar cell technology. A widely used technique to enhance silicon solar cell performance is the deposition of an aluminum layer on the back surface of the cell, followed by a thermal annealing. The aluminum thermal treatment is typically done at temperatures around 600°C for short times (10–30 min). Seeking a new approach of aluminum annealing at the back of silicon solar cells, a systematic study about the effect the above process has on dark and illuminated I–V cell characteristics is reported in this paper. We report results on silicon solar cells where annealing of aluminum was done at two different temperatures (600°C and 800°C), and compare the results for cells with and without aluminum alloying. We have shown that annealing of the aluminum in forming gas at temperatures around 800°C causes improvement of the electrical cell characteristics. We have also made evident that for temperatures below 250 K, the predominant recombination process for our cells is trap-assisted carrier tunneling for both annealing temperatures, but it is less accentuated for cells with annealing of aluminum at 800°C. For temperatures above 250 K, the recombination proceeds through Shockley–Read–Hall trap levels, for cells annealed at both temperatures. Furthermore, it seems from DLTS measurements that there is gettering of iron impurities introduced during the fabrication processes. The transport of impurities from the bulk to the back surface (alloyed with aluminum) reduces the dark current and increases the effective diffusion length as determined from dark I–V characteristics and from spectral response measurements, respectively. All these effects cause a global efficiency improvement for cells where aluminum is annealed at 800°C as compared to conventional cells where the annealing was made at 600°C.     

Effects of illumination and Co γ-ray irradiation on the electrical characteristics of porous silicon solar cells

A new approach for hybrid metal–insulator–semiconductor (MIS) Si solar cells is adopted by Institute of Fundamental Problems for High Technology, Ukrainian Academy of Sciences. In order to interpret the effect of illumination and ⁶⁰Co γ-ray radiation dose on the electrical characteristics of solar cells are studied at room temperature. Before the solar cells are subjected to stressed irradiation six different illumination levels of forward and reverse bias I–V measurements are carried out at room temperature. The solar cells are irradiated with ⁶⁰Co γ-ray source irradiation, with a dose rate of 2.12 kGy/h and an over dose range from 0 to 500 kGy. Experimental results shows that both the values of capacitance and conductance increase with increasing illumination levels and give the peaks at high illumination levels. γ-ray irradiation induces an increase in the barrier heights Φ_b(C–V) which are obtained from reverse-bias C–V measurements, whereas barrier heights Φ_b(I–V) which are deducted from forward-bias I–V measurements remain essentially constant. This negligible change of Φ_b(I–V) is attributed to the low barrier height (BH) in regions associated with the surface termination of dislocations. Both the I–V and C–V characteristics indicate that the total-dose radiation hardness of the Si solar cells cannot be neglected according to illumination levels.     

Thickness dependence of microcrystalline silicon solar cell properties

This paper addresses the performance of pin and nip solar cells with microcrystalline silicon (μc-Si:H) absorber layers of different thickness. Despite the reverse deposition sequence, the behavior of both types of solar cells is found to be similar. Thicker absorber layers yield higher short-circuit currents, which can be fully attributed to an enhanced optical absorption. Open-circuit voltage V_OC and fill factor FF decrease with increasing thickness, showing limitations of the bulk material. As a result of these two contrary effects the efficiency η varies only weakly for absorber layers of 1 to 4 μm thickness, yielding maximum values up to 8.1 %. For a-Si:H/μc-Si:H stacked solar cells an initial efficiency of 12% has been obtained.     

Effect of series resistance on metal-wrap-through multi-crystalline silicon solar cells

Metal-wrap-through (MWT) is a promising technique to improve the solar cell performance cost effectively because it can be easily integrated into the current production line with only two additional processing steps. Metal filling through the via-holes is a key to obtain low series resistances and good FFs. In this study, several screen printing process conditions were examined to find out an optimal filling state of the metal contacts. Various shapes of the filled metals in the via-holes were formed with different printing conditions, and the shape of the filled metal results in different series resistance values. Optimization of the printing conditions dramatically reduced the series resistance of the MWT cells. The maximum and minimum series resistance values of the cells obtained are 8.56 and 0.114 Ω cm², respectively. As a result, we achieved an efficiency of 16.3% using the optimal printing condition on 156 mm×156 mm solar-grade multi-crystalline silicon wafer, which was 0.8% absolute higher than the baseline cell efficiency.     

A single procedure for helping PV designers to select silicon PV modules and evaluate the loss resistances

When a photovoltaic system is to be sized, different PV modules are considered. The optimisation of such systems is always the goal, but the choice of the PV module with best performance should also be considered. Nevertheless, selecting a module from catalogue data has certain inconveniences. First, because those data allow only comparisons with absolute magnitudes, the conclusions about which module is the most appropriate is not easy. Second, data provided in catalogues are not sufficient to know the module behaviour under conditions different from standard. This paper deals with the normalisation of the modules data by considering a base that allows for obtaining a “per unit” representation. For modelling and studying the modules under non-standard conditions it is necessary to know series and shunt resistances, but that is not easy. Then, by simulations, it is possible to show the influence of these resistances in the module behaviour.     

A new approach to study organic solar cell using Lambert W-function

Organic photovoltaic solar cells bear an important potential of development in the search for low-cost modules for the production of domestic electricity. One of the main differences between inorganic and organic solar cells is that photo-excitation in these materials does not automatically lead to the generation of free charge carriers, but to bind electron–hole pairs (exciton) with a binding energy of about 0.4 eV. Till now various numerical methods using approximations have been reported to study different aspects of organic solar cells. For the first time an accurate method using Lambert W-function is presented to study different parameters of organic solar cells.     

Determination of solar cell parameters from its current–voltage and spectral characteristics

An algorithm for the calculation of solar cell parameters (series and parallel resistance, diode coefficient, reverse current density) calculation from its current–voltage characteristics at fixed illumination intensity is proposed. The possibility of determining the p–n junction depth on the basis of spectral dependencies of diode photocurrent at different values of the applied bias voltage is shown.     

Modification of fundamental parameters in the silicon solar cells by current pulses

An experimental study of the effect of degradation of the metal-semiconductor contact by current pulses on the I−V characteristics of silicon solar cells allows us to discuss the two-diode model as a function of series and shunt resistances. It is shown that contact degradation is the unique factor deteriorating the fundamental parameters. The recombination, diffusion and photocurrent terms remain unchanged with adherence loss between metal contact and silicon semiconductor.     

Effect of illumination intensity and temperature on the I–V characteristics of n-C/p-Si heterojunction

Krishna et al. (Sol. Energy Mater. Sol. Cells 65 (2001) 163) have recently developed an heterojunction n-C/p-Si in order to achieve low cost and high-efficiency carbon solar cell. It has been shown that for this structure, the maximum quantum efficiency (25%) appears at wavelength λ (600 nm). In this paper, the dependence of I–V characteristics of this heterojunction solar cell on illumination intensity and temperature has been systematically investigated. An estimation of the stability of the solar cell with temperature has been made in terms of the temperature coefficient of I_sc and V_oc. The intensity variation study has been used to estimate the series resistance R_s of the solar cell.The effect of illumination intensity on I–V of n-C/p-Si heterojunction is more complex because the carrier lifetime and the carrier mobility of amorphous carbon are small and also because drift of carriers by built-in electric field plays an important role in these cells. Therefore, the conventional analytical expression for I–V characteristic is not applicable to such solar cells. These structures will not obey the principle of superposition of illuminated and dark current. The experimental results have been analysed by developing empirical relation for I–V.The temperature sensitivity parameters α, the change in I_sc and β, the change in V_oc per degree centigrade have been computed and are found to be 0.087 mA/°C and 1 mV/°C, respectively. This suggests that the heterojunction n-C/p-Si has good temperature tolerance. The value of series resistance has been estimated from the family of I–V curves at various intensities. The R_s is found to be ≈12 Ω, which is on the higher side from the point of view of photovoltaic application.     

Monitoring current–voltage characteristics and energy output of silicon photovoltaic modules

Photovoltaic (PV) system designers use performance data of PV modules to improve system design and make systems more cost effective. The collection of this valuable data is often not done due to the high costs associated with data acquisition systems. In this paper, we report on the design of a low-cost current–voltage (I–V) measuring system used to monitor the I–V characteristics of PV modules. Results obtained from monitoring seven crystalline silicon modules between October 2001 and November 2002 are presented and discussed. Results obtained also show the value of being able to continuously monitor the current–voltage characteristics of PV modules.     

Fabrication of buried contact silicon solar cells using porous silicon

We report the fabrication of buried contact solar cells using porous silicon as sacrificial layer to create well-defined channels (for buried contacts) in silicon. In this paper, the salient features of the technology have been presented. No detrimental effect was found in the performance of buried contact solar cell with partially filled contact area compared to the solar cells having conventional planar contacts. However, a marked difference in the short circuit current density was seen when channel was fully filled with metal by screen printing, without degradation in the open-circuit voltage. It is expected that improved processing in combination with optimized buried metallic contact parameters may yield higher efficiencies that may result in substantial decrease in solar cell cost.     

Stability and photodegradation mechanisms of conjugated polymer/fullerene plastic solar cells

Degradation studies of poly(2-methoxy-5-(3′,7′-dimethyloctyloxy)-1,4-phenylene-vinylene) (MDMO-PPV), fullerenes ((6,6)-phenyl C₆₁- butyric acid methyl ester (PCBM) and C₆₀), and mixtures, which are the photoactive components in plastic solar cells, are shown. The degradation processes of the individual components and of a 1 : 3 mixture are characterized by attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy and by current/voltage (I–V) measurements of devices under the influence of light and oxygen. A faster degradation rate was found for the polymer compared with C₆₀. In composites with fullerenes, the stability of MDMO-PPV is enhanced due to the fast electron transfer to C₆₀.     

Clear separation of seasonal effects on the performance of amorphous silicon solar modules by outdoor I/V-measurements

The causes of seasonal variations on the performance of an amorphous silicon solar module were clearly separated using long-term outdoors I(V)-measurements. We normalized the data to a standard temperature, by using measured temperature coefficients of the characteristic parameters of the I(V)-curve, rather then extrapolating the curve itself. The resulting data were interpreted using a new model containing an effective μτ-product in the i-layer of the device (Merten et al. 1997). This μτ-product is accessed by variable illumination measurements (VIM) of the I(V) characteristic, which can be easily performed outdoors, making use of the natural variation in the illumination levels. The effective μτ-product of the module remains constant throughout its second year of outdoor exposure. We conclude that the enhanced efficiency in summer is, therefore, mainly a spectral effect, and operating temperatures exceeding the winter value of 60°C do not further increase the module's performance.     

Optical, electrical and photovoltaic characteristics of organic semiconductor based on oxazine/n-Si heterojunction

In this work, the construction and photoelectrical characterization of p-type organic semiconductor oxazine (OXZ) in junction with n-type silicon semiconductor are presented. The Stokes shift between absorption and emission of oxazine was analyzed. The analysis of the spectral behavior of the absorption coefficient (α) of OXZ, in the absorption region revealed a direct transition, and the energy gap was estimated as 1.82 eV. From the current–voltage, I–V, measurements of the Au/OXZ/n-Si/Al heterojunction in the temperature range 300–375 K, characteristic junction parameters and dominant conduction mechanisms were obtained. This heterojunction showed a photovoltaic behavior with a maximum open circuit voltage, V_oc, of 0.42 V, short-circuit current density, J_sc, of 3.25 mA/cm², fill factor, FF, of 0.35 and power conversion efficiency, η, of 3.2% under 15 mW/cm² white light illumination.     

Zone melting recrystallization of silicon films for crystalline silicon thin-film solar cells

Coarse-grained silicon films for crystalline silicon thin-film solar cells have been prepared by zone melting recrystallization. A zone melting heater was modified to obtain better temperature homogeneity of the sample and higher reproducibility of the melt process. Various substrate materials of different purity and surface roughness have been tested concerning their suitability for, silicon deposition, zone melting and solar cell process. Solar cell efficiencies up to 10.5% could be achieved on silicon sheets from powder, capped by an intermediate layer. Silicon films on SiAlON ceramics were successfully processed to solar cells by a completely dry solar cell process.     

Formation of porous silicon for large-area silicon solar cells: A new method

Luminescent porous silicon (PS) was prepared for the first time using a spraying set-up, which can diffuse in a homogeneous manner HF solutions, on textured or untextured (1 0 0) oriented monocrystalline silicon substrate. This new method allows us to apply PS onto the front-side surface of silicon solar cells, by supplying very fine HF drops. The front side of N⁺/P monocrystalline silicon solar cells may be treated for long periods without altering the front grid metallic contact. The monocrystalline silicon solar cells (N⁺/P, 78.5 cm²) which has undergone the HF-spraying were made with a very simple and low-cost method, allowing front-side Al contamination. A poor but expected 7.5% conversion efficiency was obtained under AM1 illumination. It was shown that under optimised HF concentration, HF-spraying time and flow HF-spraying rate, Al contamination favours the formation of a thin and homogeneous hydrogen-rich PS layer. It was found that under optimised HF-spraying conditions, the hydrogen-rich PS layer decreases the surface reflectivity up to 3% (i.e., increase light absorption), improves the short circuit current (I_sc), and the fill factor (FF) (i.e., decreases the series resistance), allowing to reach a 12.5% conversion efficiency. The dramatic improvement of the latter is discussed throughout the influence of HF concentration and spraying time on the I–V characteristics and on solar cells parameters. Despite the fact that the thin surfae PS layer acts as a good anti-reflection coating (ARC), it improves the spectral response of the cells, especially in the blue-side of the solar spectrum, where absorption becomes greater, owing to surface band gap widening and conversion of a part of UV and blue light into longer wavelengths (that are more suitable for conversion in a Si cell) throughout quantum confinement into the PS layer.     

Simulation of I–V characteristics of a PV module with shaded PV cells

The authors are studying a diagnostic method of a PV power generating system. We consider that the change of I–V characteristics can be utilized for the diagnosis. However, the report on the change of I–V characteristics is very little. In this paper, we investigate the relation between the output lowering due to shaded PV cells and the change of I–V characteristics, utilizing the computer simulation. It was proven from the simulation that I–V characteristics are changed by the condition of the shadow, which covered the module. The change of I–V characteristics of a PV module with shaded PV cells is discussed by the shift of the avalanche breakdown voltage of shaded PV cells.     

Concentrator silicon solar cells from silicon industry rejects

Two types of silicon (Si) substrates (40 n-type with uniform base doping and 40 n/n⁺ epitaxial wafers) from the silicon industry rejects were chosen as the starting material for low-cost concentrator solar cells. They were divided into four groups, each consisting of 20 substrates: 10 are n/n⁺ and 10 are n substrates, and the solar cells were prepared for different diffusion times (45, 60, 75 and 90 min). The fabricated solar cells on n/n⁺ substrates (prepared with a diffusion time of 75 min) showed better parameters. In order to improve their performances, particularly the fill factor, 20 new solar cells on n/n⁺ substrates were fabricated using the same procedure (the diffusion time was 75 min)—but with four new front contact patterns. Investigation of current–voltage (I–V) characteristics under AM 1.5 showed that the parameters of these 20 new solar cells have improved in comparison to previous solar cells' parameters, and were as follows: open-circuit voltage (V_OC=0.57 V); short circuit current (I_SC=910 mA), and efficiency (η=9.1%). Their fill factor has increased about 33%. The I–V characteristics of these solar cells were also investigated under different concentration ratios (X), and they exhibited the following parameters (under X=100 suns): V_OC=0.62 V and I_SC=36 A.