Heavy ion irradiation effects in the rare-earth sesquioxide Dy2O3

Polycrystalline pellets of the rare-earth sesquioxide Dy₂O₃ with cubic C-type rare-earth structure were irradiated with 300 keV Kr²⁺ ions at fluences up to 5 × 10²⁰ Kr/m² at cryogenic temperature. Irradiation-induced microstructural evolution is characterized using grazing incidence X-ray diffraction (GIXRD) and transmission electron microscopy (TEM). In previous work, we found a phase transformation from a cubic, C-type to a monoclinic, B-type (C2/m) rare-earth structure in Dy₂O₃ during Kr²⁺ ion irradiation at a fluence of less than 1 × 10²⁰ Kr/m². In this study, we find that the crystal structure of the top and middle regions of the implanted layer transform to a hexagonal, H-type (P6₃/mmc) rare-earth structure when the irradiation fluence is increased to 5 × 10²⁰ Kr/m²; the bottom of the implanted layer, on the other hand, remains in a monoclinic phase. The irradiation dose dependence of the C-to-B-to-H phase transformation observed in Dy₂O₃ appears to be closely related to the temperature and pressure dependence of the phases observed in the phase diagram. These transformations are also accompanied by a decrease in molecular volume (or density increase) of approximately 9% and 8%, respectively, which is an unusual radiation damage behavior.     

Structural evolution in Fe ion implanted Si upon thermal annealing

We have performed high-dose Fe ion implantation into Si and characterized ion-beam-induced microstructures as well as annealing-induced ones using transmission electron microscopy (TEM) and grazing-incidence X-ray diffraction (GIXRD). Single crystals of Si(1 0 0) substrate were irradiated at 623 K with 120 keV Fe⁺ ions to a fluence of 4 × 10¹⁷ cm⁻². The irradiated samples were then annealed in a vacuum furnace at temperatures ranging from 773 K to 1073 K. Cross-sectional TEM observations and GIXRD measurements revealed that a layered structure is formed in the as-implanted specimen with ε-FeSi, β-FeSi₂ and damaged Si, as component layers. A continuous β-FeSi₂ layer was formed on the topmost layer of the Si substrate after thermal annealing.     

Effects of xenon implantation in spinel-zirconia/ceria composites

Two prethinned spinel specimens containing either Y_0.15Zr_0.85O₂ or Ce_0.5Zr_0.5O₂ particles were implanted with 200–400 keV Xe ions at 873 K using the IVEM-Tandem Facility at Argonne National Laboratory. In situ transmission electron microscopy (TEM) was conducted during the implantation in order to follow the evolution of the microstructure. At an ion fluence between 2.4x10²⁰ to 3x10²⁰ m⁻² (up to 50 dpa and 4.7 at %), large Xe bubbles of 50–100 nm developed at the boundaries of the small oxide particles, while a high density of dislocation loops (up to 8 nm in diameter) and much smaller bubbles (up to 4 nm in diameter) formed in the spinel matrix. No large bubbles were observed at the boundaries between the spinel grains. These results suggest that the boundaries between spinel and oxide particles are preferred sites for fission gas accumulation.     

Neutron-irradiation effect in ceramics evaluated from macroscopic property changes in as-irradiated and annealed specimens

Macroscopic length (linear swelling) and thermal diffusivity changes were measured for heavily neutron-irradiated -Al₂O₃, AlN, β-Si₃N₄ and β-SiC that were irradiated under the same capsule to compare the difference between these materials. And in addition, several capsules were irradiated under different temperatures (646–1039 K) and to different neutron doses (0.4–8.0 × 10²⁶ n/m²) in the Japanese experimental fast reactor JOYO. The swelling and the thermal diffusivity of as-irradiated specimens showed some dependence on the neutron-irradiation dose and the irradiation temperature, and that indicates stability under neutron-irradiation environments. Alpha-Al₂O₃ and AlN showed relatively large swelling and degradation of thermal diffusivity than β-Si₃N₄ and β-SiC. This difference is related to the crystal structure of each material. The dependence of swelling on irradiation dose, that is, -Al₂O₃ showed linear inclination but β-Si₃N₄ and β-SiC showed saturation, supports the model of defect structures. In addition, annealing behaviors of swelling and thermal diffusivity were compared to analyze the behavior of defects at higher temperature.     

阳离子有序相Ce2Zr2O7.97的石墨还原制备及其结构表征

采用石墨还原法探索了CeO₂-ZrO₂二元体系在不同还原温度、还原时间条件下的物相组成及结构,借助X射线衍射、红外振动光谱等手段对还原样品进行了物相表征及结构分析。实验结果表明：通过石墨还原能在较低温度（T_red＝1050 ℃）、较短时间（t＝24 h）内合成纯相Ce₂Zr₂O_7.97,较传统先还原（95%Ar+5%H₂,T_red≥1400℃,t＞48 h）后氧化（O₂或空气气氛）工艺更简单经济;Ce₂Zr₂O_7.97相能在1050～1300 ℃、24～72 h还原条件下稳定存在并保留至室温而不发生相分解,其机制可能归因于石墨所形成的弱还原环境;Ce₂Zr₂O_7.97相拥有与烧绿石Ce₂Zr₂O₇相近的有序阳离子亚晶胞结构,但由于其氧空位（O3、O4、O11）被大部分氧离子所填充,导致该相结构对称性降低。本文提出的石墨还原法制备富氧相Ce₂Zr₂O_7.97有望成为一种较传统制备工艺更简单经济的新方法,而Ce₂Zr₂O_7.97相能在还原气氛中稳定存在,可为An₂Zr₂O_7+x固化体的存放环境提供借鉴和参考。     

Atomic structure and disordering induced by 350 MeV Au ions in MgAl2O4

Microstructure change and atomic disordering in MgO · nAl₂O₃ (n = 1.1) irradiated with 350 MeV Au ions (S_e = 35 keV/nm) were investigated through transmission electron microscopy (TEM) and high angular resolution electron channeling X-ray spectroscopy (HARECXS) techniques. High resolution TEM revealed that each ion track maintains crystalline structure. The core region of ion track is found to reveal a lattice fringe with a half period of spinel matrix, suggesting the phase transformation from spinel to rock-salt structure. HARECXS analysis clearly showed progress of cation disorder at a significantly large region of 10 nm in diameter. These results are compared with the previous results of 200 MeV Xe ion irradiated spinel (S_e = 25 keV/nm). The structure of ion tracks is found to consist of three concentric circle structures: the defective core region (2 nm in diameter), strained region (5 nm) and cation disordered region (10–12 nm).     

Amorphization and recrystallization of the ABO3 oxides

Single crystals of the ABO₃ phases CaTiO₃, SrTiO₃, BaTiO₃, LiNbO₃, KNbO₃, LiTaO₃, and KTaO₃ were irradiated by 800 keV Kr⁺, Xe⁺, or Ne⁺ ions over the temperature range from 20 to 1100 K. The critical amorphization temperature, T_c, above which radiation-induced amorphization does not occur varied from approximately 450 K for the titanate compositions to more than 850 K for the tantalates. While the absolute ranking of increasing critical amorphization temperatures could not be explained by any simple physical parameter associated with the ABO₃ oxides, within each chemical group defined by the B-site cation (i.e., within the titanates, niobates, and tantalates), T_c tends to increase with increasing mass of the A-site cation. T_c was lower for the Ne⁺ irradiations as compared to Kr⁺, but it was approximately the same for the irradiations with Kr⁺ or Xe⁺. Thermal recrystallization experiments were performed on the ion-beam-amorphized thin sections in situ in the transmission electron microscope (TEM). In the high vacuum environment of the microscope, the titanates recrystallized epitaxially from the thick areas of the TEM specimens at temperatures of 800–850 K. The niobates and tantalates did not recrystallize epitaxially, but instead, new crystals nucleated and grew in the amorphous region in the temperature range 825–925 K. These new crystallites apparently retain some ‘memory' of the original crystal orientation prior to ion-beam amorphization.     

Ion irradiation damage effects in δ-phase Y6W1O12

Polycrystalline Y₆W₁O₁₂ samples were irradiated with 280 keV Kr²⁺ ions to fluences up to 2 × 10²⁰ ions/m² at cryogenic temperature (100 K). Ion irradiation damage effects in these samples were examined using grazing incidence X-ray diffraction (GIXRD) and cross-sectional transmission electron microscopy (TEM). The pristine Y₆W₁O₁₂ possesses rhombohedral symmetry (structure known as the δ-phase), which is closely related to cubic fluorite structure. GIXRD and TEM observations revealed that the irradiated Y₆W₁O₁₂ experiences an ordered rhombohedral to disordered cubic fluorite transformation by a displacement damage dose of ∼12 displacements per atom (dpa). At the highest experimental dose of ∼50 dpa, the uppermost irradiated region was found to be partially amorphous while the buried damage region was found to contain the same fluorite structure as observed at lower dose.     

Ion beam enhanced etching of LiNbO3

Single crystals of z- and x-cut LiNbO₃ were irradiated at room temperature and 15 K using He⁺- and Ar⁺-ions with energies of 40 and 350 keV and ion fluences between 5 × 10¹² and 5 × 10¹⁶ cm⁻². The damage formation investigated with Rutherford backscattering spectrometry (RBS) channeling analysis depends on the irradiation temperature as well as the ion species. For instance, He⁺-irradiation of z-cut material at 300 K provokes complete amorphization at 2.0 dpa (displacements per target atom). In contrast, 0.4 dpa is sufficient to amorphize the LiNbO₃ in the case of Ar⁺-irradiation. Irradiation at 15 K reduces the number of displacements per atom necessary for amorphization. To study the etching behavior, 400 nm thick amorphous layers were generated via multiple irradiation with He⁺- and Ar⁺-ions of different energies and fluences. Etching was performed in a 3.6% hydrofluoric (HF) solution at 40 °C. Although the etching rate of the perfect crystal is negligible, that of the amorphized regions amounts to 80 nm min⁻¹. The influence of the ion species, the fluence, the irradiation temperature and subsequent thermal treatment on damage and etching of LiNbO₃ are discussed.     

Thermodynamic studies on Cs4U5O17(s) and Cs2U2O7(s) by emf and calorimetric measurements

The oxygen potentials over the phase field: Cs₄U₅O₁₇(s)+Cs₂U₂O₇(s)+Cs₂U₄O₁₂(s) was determined by measuring the emf values between 1048 and 1206 K using a solid oxide electrolyte galvanic cell. The oxygen potential existing over the phase field for a given temperature can be represented by: Δμ(O₂) (kJ/mol) (±0.5)=−272.0+0.207T (K). The differential thermal analysis showed that Cs₄U₅O₁₇(s) is stable in air up to 1273 K. The molar Gibbs energy formation of Cs₄U₅O₁₇(s) was calculated from the above oxygen potentials and can be given by, Δ_fG⁰ (kJ/mol)±6=−7729+1.681T (K). The enthalpy measurements on Cs₄U₅O₁₇(s) and Cs₂U₂O₇(s) were carried out from 368.3 to 905 K and 430 to 852 K respectively, using a high temperature Calvet calorimeter. The enthalpy increments, (H⁰_T−H⁰₂₉₈), in J/mol for Cs₄U₅O₁₇(s) and Cs₂U₂O₇(s) can be represented by, H⁰_T−H⁰_298.15 (Cs₄U₅O₁₇) kJ/mol±0.9=−188.221+0.518T (K)+0.433×10⁻³T² (K)−2.052×10⁻⁵T³ (K) (368 to 905 K) and H⁰_T−H⁰_298.15 (Cs₂U₂O₇) kJ/mol±0.5=−164.210+0.390T (K)+0.104×10⁻⁴T² (K)+0.140×10⁵(1/T (K)) (411 to 860 K). The thermal properties of Cs₄U₅O₁₇(s) and Cs₂U₂O₇(s) were derived from the experimental values. The enthalpy of formation of (Cs₄U₅O₁₇, s) at 298.15 K was calculated by the second law method and is: Δ_fH⁰_298.15=−7645.0±4.2 kJ/mol.     

Gd2O3-Nd2O3-ZrO2-CeO2体系的高温固相反应研究

为研究Gd₂O₃-Nd₂O₃-ZrO₂-CeO₂四元氧化物体系的高温固相反应,以Gd₂O₃、Nd₂O₃、ZrO₂、CeO₂混合粉体为原材料,在1 673 K和1 773 K温度下煅烧24、48、72 h,分别制备了系列样品,并对合成样品进行了XRD和SEM分析。结果表明,合成产物为具有缺陷萤石相且伴有少量烧绿石相的Gd_2-xNd_xZr_2-xCe_xO₇（0≤x≤2）晶体化合物。随着煅烧温度的升高和煅烧时间的延长,产物中立方烧绿石相的化合物增多,晶粒尺寸变大,且有少量未知相生成。进而探讨了锆基陶瓷固化多核素的潜在应用,并提出了未来研究的相关热点问题。     

Carbon deposition from a γ-irradiated CO2/CO/CH4/C2H6 gas mixture on the manganese oxides MnO, Mn3O4 and Mn2O3

The composition of oxides formed on steel surfaces within power reactors may influence heat transfer efficiency. Previous studies have indicated that carbon is deposited on spinal-type oxides containing manganese, iron, cobalt, nickel and chromium. In this investigation, characterised manganese oxides have been subjected to γ-irradiation under conditions similar to those experienced in reactors in an effort to understand the catalytic processes involved in deposit initiation and growth. Mn₃O₄ and Mn₂O₃, under the conditions present in the γ-cell, were reduced to MnO during the time of exposure. Relative carbon deposition rates were observed to follow the trend MnO>Mn₃O₄≈Mn₂O₃.     

镧系元素模拟衰变子体对An_2Zr_2O_7固化体结构及其γ辐照性能的影响

锆基烧绿石An2Zr2O7以优异的抗辐照性能和化学稳定性成为高放废物中锕系核素的理想固化基材,高放废物固化体在长期贮存过程中不断衰变产生衰变子体,必将影响固化体的结构和性能。本文以镧系核素Nd模拟锕系核素Pu、Am,La模拟其衰变子体U、Np,通过溶胶凝胶方法合成了(LaxNd1-x)2Zr2O7模拟固化体。样品经高能γ辐照,辐照剂量为233.78kGy。利用X射线衍射、Raman振动光谱和结构精修方法对辐照前后的系列样品进行了分析。结果表明:(LaxNd1-x)2Zr2O7系列固化体均为单一的烧绿石结构相;固化体的晶格常数随La的增加呈线性增加,晶体结构趋于有序化,意味着衰变子体有助于固化体趋向于更加有序的烧绿石结构。γ辐照和结构精修结果表明,随着子体的增加,An—O48f键长增大,离子键结合力减小,在辐照情况下晶格易发生无序化,抗辐照能力减弱。     

Thermodynamic stability of Na2ZrO3 using the solid electrolyte galvanic cell technique

The sodium potential in the test electrode (a) Pt,O₂,Na₂ZrO₃,ZrO₂ was measured by using the emf technique employing Na-β^″-alumina as the solid electrolyte in conjunction with (b) Pt,O₂,Al₂O₃,NaAl₁₁O₁₇, (c) Pt,O₂,Na₂MoO₄,Na₂Mo₂O₇ and (d) Pt,Na₂CO₃,CO₂,O₂ as the reference electrodes over the ranges 880–1045, 700–800 and 850–940 K, respectively. The emf results between electrodes (b) and (c) were utilized for internal consistency checks. From the results on cells formed between (a) and (b) and those on (a) and (c), the standard Gibbs energy of formation, Δ_fG^o (kJ/mol) of Na₂ZrO₃ was determined to be −1699.4+0.3652T (K) valid over the temperature range 700–1045 K. The break in the emf data at 1045 K was corroborated by independent TG/DTA measurements carried out on Na₂ZrO₃ which exhibited an endotherm at 1055 K indicative of a phase transition in Na₂ZrO₃.     

Surface modification of MgAl2O4 and oxides with heavy ions of fission fragments energy

In this paper we report on results of surface modification in several candidate materials for inert matrix fuel hosts (MgAl₂O₄, MgO and Al₂O₃) induced by (0.5–5) MeV/amu Kr, Xe and Bi ion bombardment in the fluence range of 2 × 10¹⁰–10¹² ions/cm². The size and shape of nanoscale hillock-like defects, each of which was created by the impact of a single ion, have been studied by using atomic force microscopy (AFM) technique. It was found that mean hillock height on sapphire and spinel surfaces depends linearly on the incident electronic stopping power. The hillocks are highest in MgAl₂O₄, having a lower threshold for the lattice disorder in the bulk material via relaxation of electronic excitations. As a possible reason for the hillocks formation, the plastic deformation due to the defects created by the Coulomb explosion mechanism in the target subsurface layer is suggested.     

Low-temperature diffusion in inert-gas bombarded Al2O3

Previous work on diffusion in inert-gas bombarded Al₂O₃ has revealed the presence of four diffusion processes, of which two take place well below the temperatures for self-diffussion, one agrees with self-diffusion, and one occurs at temperatures well above those for self-diffusion. The present work serves to explore in greater detail the two low-temperature processes. It is shown that the first, which is found in -Al₂O₃, Al(OH)₃, and γ-Al₂O₃beginning at about 100° C, is consistent with a range of ΔH's of 28 to 50 kcal/mole. The mechanism of the process is hinted at by the fact that it overlaps the temperatures both for Al(OH)₃decomposition and for point-defect motion in -Al₂O₃; the correlation with point defects is believed, however, to be the more significant. The second process, which is found only in -Al₂O₃ beginning at 500–650° C, implies an essentially single ΔH lying between 69 and 79 kcal/mole. It was suggested previously by Matzke and Whitton on the basis of electron diffraction that the process could be attributed to the amorphous-crystalline transition of -Al₂O₃. Further aspects of low-temperature diffusion in Al₂O₃ were revealed by comparing autoradiographs of specimens of -A₂O₃which were bombarded to various doses and then either heated to 850° C or immersed in unheated 12N NaOH. Thus regions exposed to a high dose and which would be expected to be amorphous, had an increased sticking factor, a greater tendency to lose gas during heating, and an enhanced chemical reactivity.     

Argon irradiation damage at a Cu/Al2O3 interface for different alumina structures

The evolution of damages at a Cu/Al₂O₃ device interface after Ar⁺ irradiation, depending on alumina structure, and the effect of surface roughness on sputtering have been studied. A polycrystalline Cu/Al₂O₃ bilayer and polycrystalline Cu on amorphous alumina were irradiated with 400 keV Ar⁺ ion beam at doses ranging from 5 × 10¹⁶ to 10¹⁷ Ar⁺/cm² at room temperature. The copper layer thicknesses were between 100 and 200 nm. RBS analysis was used to characterize the interface modification and to deduce the sputtering yield of copper. The SEM technique was used to control the surface topography. A RBS computer simulation program was used to reproduce experimental spectra and to follow the concentration profile evolutions of different elements before and after ion irradiation. A modified TRIM calculation program which takes into account the sputtering yield evolution as well as the concentration variation versus dose gives a satisfactory reproduction of the experimental argon distribution. The surface roughness effect on sputtering and the alumina structure influence at the interface on mixing mechanisms are discussed.     

Low temperature neutron irradiation effects on microstructure and tensile properties of molybdenum

Polycrystalline molybdenum was irradiated in the hydraulic tube facility at the High Flux Isotope Reactor to doses ranging from 7.2 × 10⁻⁵ to 0.28 dpa at 80 °C. As-irradiated microstructure was characterized by room-temperature electrical resistivity measurements, transmission electron microscopy (TEM) and positron annihilation spectroscopy (PAS). Tensile tests were carried out between −50 and 100 °C over the strain rate range 1 × 10⁻⁵ to 1 × 10⁻² s⁻¹. Fractography was performed by scanning electron microscopy (SEM), and the deformation microstructure was examined by TEM after tensile testing. Irradiation-induced defects became visible by TEM at 0.001 dpa. Both their density and mean size increased with increasing dose. Submicroscopic three-dimensional cavities were detected by PAS even at 0.0001 dpa. The cavity density increased with increasing dose, while their mean size and size distribution was relatively insensitive to neutron dose. It is suggested that the formation of visible dislocation loops was predominantly a nucleation and growth process, while in-cascade vacancy clustering may be significant in Mo. Neutron irradiation reduced the temperature and strain rate dependence of the yield stress, leading to radiation softening in Mo at lower doses. Irradiation had practically no influence on the magnitude and the temperature and strain rate dependence of the plastic instability stress.     

Large conductivity enhancement in polycrystalline 12CaO · 7Al2O3 thin films induced by extrusion of clathrated O ions by hot Au implantation and ultraviolet light illumination

Large enhancement in electrical conductivity from <10⁻¹⁰ S cm⁻¹ to 4 × 10⁻² S cm⁻¹ was achieved in polycrystalline 12CaO · 7Al₂O₃ (p-C12A7) thin films by hot Au⁺ implantation at 600 °C and subsequent ultraviolet (UV) light illumination. Although the as-implanted films were transparent and insulating, the subsequent UV-light illumination induced persistent electronic conduction and coloration. A good correlation was found between the concentration of photo-induced F⁺-like centers (a cage trapping an electron) and calculated displacements per atom, indicating that the hot Au⁺ implantation extruded free O²⁻ ions from the cages in the p-C12A7 films by kick-out effects and left electrons in the cages. These results suggest that H⁻ ions are formed by the Au⁺ implantation through the decomposition of preexisting OH⁻ ions. Subsequent UV-light illumination produced F⁺-like centers via photoionization of the H⁻ ions, which leads to the electronic conduction and coloration.     

Optical properties of γ-irradiated synthetic sapphire and yttria-stabilized zirconia spectroscopic windows

Synthetic sapphire and yttria-stabilized zirconia single-crystals were irradiated by increasing doses of γ-radiation to study the changes of their optical properties. The optical transparency of -Al₂O₃ was nearly constant up to the γ-radiation dose of 150 kGy for the spectral range of 400–1000 nm, while yellowish-brown coloration of (Zr_0.89Y_0.11)O_1.94 appeared for irradiation above 1 kGy. However, after a short-term heating in the temperature of 210^oC stable discoloration of zirconia can be achieved.