新型多功能用电保护器

文章介绍一种多功能用电保护器，它具有过电压、过电流、短路及触漏电保护功能，具备电流量化保护功能和排除故障后自动重合问恢复供电功能。该保护器运用于办公、家庭等单相用电场合，既可以对单台用电器进行保护；也可以对局部用电网进行综合保护     

漏电限流保护安全插座

本文是笔者根据多年的从业需要,设计一款安全插座,通过实时调节插座的用电量,实现插座的短路、过载和漏电等用电安全保护。     

新型多功能漏电保护器芯片的设计

利用数模混合信号CMOS工艺实现了一种新型漏电开关保护器芯片.与传统的模拟电路保护芯片相比,这一芯片充分利用了数字电路带来的好处:降低了功耗,采用"定时延"方法大大提高了保护控制的精度,集成了电源的过压、过载保护功能以及自动重合闸功能,提供了适应不同应用环境的可编程性,同时对每一个输入的漏电信号都进行有效性检测,减小漏电保护器的误触发率,提高了抗干扰能力.     

基于瑞萨单片机的智能限电、防雷和防火控制器设计

为避免学生宿舍内因使用大功率违章电器导致用电线路过载过热而引发火灾等隐患和漏电导致的接地、电孤短路等引起火灾事故,设计了以瑞萨单片机为控制核心的用电安全控制系统.系统从用电源头自动识别、防止学生宿舍违章恶性负载的使用和实时检测线路漏电等情况的智能控制.调试结果证明该系统在保障学生宿舍的用电安全(限电功能、时间控制、人身...     

浅析漏电保护器误动作的原因

为确保家庭用电及家用电器的安全使用,家用单相漏电保护器的应用亦很普及。漏电保护器又称之为触电保护器。这种漏电自动开关其基本功能为,当人体一旦触及电源电流时,在电流强度和触及时间未达到对人体伤害程度前,漏电保护器印能自动在瞬间切断电源,以达到最有效的保护人身安全的目的。漏电保护器内在电路设计一般采用电流型,主体结构由自行脱扣器、零序电流互感器、电子触发器等三     

浅析漏电保护器误动作的原因

为确保家庭用电及家用电器的安全使用,家用单相漏电保护器的应用亦很普及.漏电保护器又称之为触电保护器.这种漏电自动开关其基本功能为,当人体一旦触及电源电流时,在电流强度和触及时间未达到对人体伤害程度前,漏电保护器即能自动在瞬间切断电源,以达到最有效的保护人身安全的目的.     

高灵敏可控制漏电保护器的设计

为了电气实训室的安全系数,保护人身安全,漏电保护器可靠灵敏是防止人身触电的有效措施。由于初学者对操作不熟练加之可能违规操作、使用频繁,设计一款高灵敏的漏电保护就显得很有必要,基于此目的,通过研究设计出了可调高灵敏的漏电保护器,非常适合教学实验室使用,对提高学生用电安全大有裨益。     

漏电保护器测试系统的设计

漏电保护器的性能对人身触电提供的安全保护起着重要作用.而漏电保护器的性能由它的漏电动作特性参数决定.随着对漏电保护的可靠性提高,对漏电保护器的漏电动作特性参数的测试提出了更高的要求.采用ARMLPC2132设计的漏电保护器动作特性自动测试系统,能自动对漏电保护器特性参数进行测试,为漏电保护器的性能研究、质量检验及生产提...     

探究电动机智能保护器设计

电动机的连续性工作在异常的状态下通常会受到干扰。电动机工作不能正常进行就会产生巨大的经济损失。所以在日常工作中应该保证电动机的正常运行。为了预防电动机的故障。应该加装保护器设置,当电动机发生故障时,能第一时间启动保护机制,保护电动机不受损坏。作者以理论知识为基础探究如何保护电动机,利用智能化的保护技术,探究如何让三相异步的电动机能应对出现的诸如过载、短路、过压、电力不足等故障情况。单片机的工作原理,进行对于电动机的立体保护,设计通过AT8860的单片机的工作原理,结合电动机本身,实现有效的电动机保护器设计。     

漏电保护器在施工现场用电设备安装中的应用

经济发展和城市建设节奏加快,使得确保施工现场用电安全形势日益凸显。在众多的安全措施中,该文从漏电保护的原理、应用范围等方面对漏电保护器在施工现场的应用进行的了综合比对阐述,认为较TN—C-S与TN—S,漏电保护器（RCD）具有明显优势,应该在实际工程应用领域推广。此外,还给出了漏电保护器（RCD）应用范围和有关注意事项,同时指出电气设备和人身安全保护的措施及与之相配合的等电位联结,这里给出建议和思路有一定的工程应用价值。     

漏电保护技术及其应用

电气设备在我们工作及日常生活中占有重要的位置。漏电保护器是一种保护人身及设备安全的重要电器。在低压配电系统中装设漏电保护器可以预防电击事故,防止漏电引起的火灾和电气设备的损坏,因此,漏电保护装置比较重要。     

磁路与电路的对偶性案例：绝缘磁芯变压器

在电气工程专业课程中,电路和磁路既有区别又相互联系。本文以绝缘磁芯变压器为例,在建立其磁路模型的基础上,利用磁路与电路之间的对偶性,采用通用、系统的方法获得了其等效电路模型。与理想变压器相比,绝缘磁芯变压器存在漏磁,且磁路含多个网孔,是学生理解电路对偶性、磁路对偶性以及磁路和电路之间对偶性的典型案例。     

温度采集仪调理电路的isp实现技术

介绍温度采集仪调理电路的结构及工作原理,简单介绍在系统可编程模拟器件ispPAC10的基本结构,并借助于PAC Designer软件详细描述ispPAC10实现温度采集仪数据放大器具体方法和步骤。与传统的模拟电路设计方法相比,运用isp技术实现的温度采集仪调理电路具有简洁可靠、开发周期短等特点。     

Sleep switch dual threshold Voltage domino logic with reduced standby leakage current

A circuit technique is presented for reducing the subthreshold leakage energy consumption of domino logic circuits. Sleep switch transistors are proposed to place an idle dual threshold voltage domino logic circuit into a low leakage state. The circuit technique enhances the effectiveness of a dual threshold voltage CMOS technology to reduce the subthreshold leakage current by strongly turning off all of the high threshold voltage transistors. The sleep switch circuit technique significantly reduces the subthreshold leakage energy as compared to both standard low-threshold voltage and dual threshold voltage domino logic circuits. A domino adder enters and leaves a low leakage sleep mode within a single clock cycle. The energy overhead of the circuit technique is low, justifying the activation of the proposed sleep scheme by providing a net savings in total power consumption during short idle periods.     

Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect

This paper reports an analysis of floating body effect related gate tunneling leakage current behavior of the 40 nm PD SOI NMOS device using bipolar/MOS equivalent circuit approach. As confirmed by the experimentally measured data, the bipolar/MOS equivalent circuit approach could predict the gate tunneling leakage current behavior, which is strongly affected by the parasitic bipolar device in the floating body as observed from the perpendicular electric field along the path of the U-shaped edges of the polysilicon gate.     

A Compact Model for Polysilicon TFTs Leakage Current Including the Poole–Frenkel Effect

Based on a generation-recombination model including the Poole-Frenkel (PF) effect and phonon-assisted tunneling, numerical analysis shows that the logarithm of generation rate for polysilicon thin-film transistors (poly-Si TFTs) working in the leakage region is linear with the square root of lower electric field and approximately linear with higher electric field over a wide temperature range (273-423 K). Therefore, an analytical expression is found to approximate the generation rate. Furthermore, a compact model for poly-Si TFT leakage current including the PF effect is developed in this paper. The proposed model is analytical without numerical calculation, and its parameters can be extracted from experimental data; hence, it is attractive for circuit simulation. The model has been verified by comparing simulated results with experimental data.     

不同光刻胶作保护层对a-IGZO TFT性能的影响

采用脉冲直流溅射的方式沉积IGZO膜层作为底栅结构TFT的有源层,并在背沟道上涂覆不同类型的光刻胶作为保护层,探讨不同保护层对器件电学特性的影响。经考察发现:采用光刻胶作为保护层时,保护层制作后短期内可维持器件的电学特性基本不变;但涂胶后暴露在空气中一定时间后,器件的电学特性开始衰退,尤其是阈值电压变化较明显,器件工作模式由增强型变为耗尽型,并推断光刻胶中溶剂接触到背沟道中IGZO,其化学反应导致沟道中氧脱附,载流子浓度增加。实验还发现:使用SU-8负性光刻胶作为保护层的器件,其电学特性衰退较小,在空气中放置一段时间后表现最稳定。     

A novel concept for fault current tolerable contactors

It is critical in the development of new contactors and starters to enable the product to avoid or minimize contact welding during short circuit events. The IEC 60947-4-1 or UL 508E Type II coordination requires that a contact weld can be easily broken without significant deformation after short circuit events, and the new standard of IEC 60947-6-2 mandates no contact welds after short circuit events. In this paper, a novel concept has been developed and investigated to allow significant fault current tolerance improvement for next generation contactor and starter product lines. An innovative design of the movable contact bridge utilizes the magnetic force generated by the fault current to "latch" the contacts open until current zero and reclose after current zero. This delay of contact reclosing allows the molten contact surface to solidify and minimizes or even eliminates contact welding altogether. This design does not require a size increase of the product to achieve this performance and adds minimal cost. Test evaluation has been carried out to verify this concept. The test results show that the contacts close about 1.5 to 2ms after current zero and achieve no contact welding after short circuit events with proper current limiting by the upstream circuit protector.     

PMOS-Only Sleep Switch Dual-Threshold Voltage Domino Logic in Sub-65-nm CMOS Technologies

A circuit technique is proposed in this paper for simultaneously reducing the subthreshold and gate oxide leakage power consumption in domino logic circuits. Only p-channel sleep transistors and a dual-threshold voltage CMOS technology are utilized to place an idle domino logic circuit into a low leakage state. Sleep transistors are added to the dynamic nodes in order to reduce the subthreshold leakage current by strongly turning off all of the high-threshold voltage transistors. Similarly, the sleep switches added to the output nodes suppress the voltages across the gate insulating layers of the transistors in the fan-out gates, thereby minimizing the gate tunneling current. The proposed circuit technique lowers the total leakage power by up to 77% and 97% as compared to the standard dual-threshold voltage domino logic circuits at the high and low die temperatures, respectively. Similarly, a 22% to 44% reduction in the total leakage power is observed as compared to a previously published sleep switch scheme in a 45-nm CMOS technology. The energy overhead of the circuit technique is low, justifying the activation of the proposed sleep scheme by providing a net savings in total energy consumption during short idle periods.     

用阻容保护装置抑制真空断路器的操作过电压

本文阐述了真空断路器用ＲＣ保护装置的原理。分析了用ＲＣ保护装置保护电力系统及其设备的试验结果。ＲＣ保护装置主要参数的选择。最后，讨论了有关ＲＣ保护装置的一些问题。