共查询到18条相似文献,搜索用时 144 毫秒
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湿化学法合成先驱体制备氮化硼纤维的研究 总被引:3,自引:0,他引:3
以硼酸和三聚氰胺为原料,采用湿化学法合成先驱体,在氮气气氛中制备出氮化硼(BN)纤维。用中和滴定法、红外吸收光谱(IR)、X射线衍射(XRD)、扫描电镜(SEM)对合成的先驱体及制得的BN纤维的氮含量、形貌及结构进行分析。结果表明合成温度1,700℃,保温时间3 h,氮气流量2 L/min时制得的BN纤维的氮含量为53.46%,达到理论值的95%。先驱体分子中存在B—N、N—H、C—O—C、—(B—N)—结构单元。用扫描电镜观察制得的BN纤维直径为2~10 靘,长径比为40~50。 相似文献
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介绍了用静电纺丝法制备钇铁石榴石(YIG)磁光单晶纳米纤维材料的研究工作,其主要制备方法是将合成YIG所需金属元素的醇盐溶解于有机溶剂,通过静电纺丝法制备出了复合超细纤维,然后进行热处理,得到晶态磁光纳米纤维.对制备的复合纤维和热处理后的磁光纤维作了扫描电镜(SEM)分析,对热处理后的纤维作为了透射电镜(TEM)和X射线衍射(XRD)测试.通过对测试结果的分析发现,在纺丝过程中微量注射泵的推进速度和空气相对湿度是主要影响因素,推进速度和相对湿度减小,都有利于成丝.复合纤维的直径在500 nm~1 000 nm之间.经过750℃热处理后,样品仍然能保持纤维状结构,纤维直径在100 nm左右,并能够合成出单晶钇铁石榴石相. 相似文献
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利用溶胶凝胶和氢气还原的方法合成出Fe/SnO2纳米颗粒。通过催化裂解乙炔的方法,可在该纳米颗粒表面合成出高产率、高选择性的碳纳米纤维。研究表明温度对所合成碳纳米纤维的产率、尺寸和微结构有着很大的影响。获得了超高的碳纳米纤维的产率(278和445),并且所合成的碳纳米纤维材料表现出较好的微波吸收性能。在15.29 GHz处,样品的反射损耗达到最小,其数值约为-7.28 dB,且可在3.90~18 GHz内获得低于-5 dB的反射损耗值。因此,提出了一个简单、环境友好的碳纳米纤维超高产合成路径,该路径有利于该材料的广泛使用。 相似文献
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根据无铅回流焊的工艺特点,论述了对回流炉加热、冷却、助焊剂管理和氮气保护各系统的改造原则和方案,给出了氮气保护系统的评价标准,对罐装氮气和氮气发生器两种供应系统进行了成本估算和对比。 相似文献
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以过氧化苯甲酰为引发剂,醋酸乙烯酯为溶剂,在无氮气保护合成得到了主链为SBS、支链为PVAC的接枝共聚物SBS-g-VAG,其结构被红外光谱所证实,本讨论了引发剂、时间、温度及SBS用量对接枝反应的影响。 相似文献
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通过添加BaO增加了铝酸钙玻璃的成玻能力,确定了CaO-BaO-Al2O3三元系统的成玻区域:25~45 mol%的Al2O3,45~65 mol%的CaO, 0~18 mol%的BaO,在成玻区域内采用Hruby值研究Al2O3/CaO值和BaO含量对系统成玻能力的影响,发现当Al2O3/CaO值为0.60、BaO含量为8 mol%时,系统的成玻能力最强。以成玻能力最好的56 CaO-8 BaO-36 Al2O3组成为基础,将真空烧结后几乎不含水的玻璃配合料分别在大气环境下、干燥氮气保护以及干燥氮气保护+CCl4搅拌等3种不同的条件下进行熔制,分析玻璃的红外透过光谱和残余水分含量。结果表明:采用干燥氮气保护+CCl4搅拌的方法,7 mm玻璃在2.9 um的透过率接近84%,残余水分含量仅为0.003 7,基本消除了OH-1的影响。 相似文献
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Thin films of aluminum nitride (AlN) have been grown, using the cathodic arc ion deposition technique. The effects of nitrogen fractions in the discharge on synthesized films growth rate, stoichiometric ratio (N/Al), crystal orientation and molecular mode of vibration have been investigated. AlN films have been studied by means of Rutherford backscattering (RBS) spectroscopy, X-ray diffraction (XRD), Fourier transforms infrared spectroscopy (FTIR), scanning electron microscope (SEM) and the four probe method. In RBS results, it has been found that growth rate and stoichiometric ratio decrease while reducing the nitrogen content in the synthesized chamber. XRD patterns indicated that films prepared in 100–85% nitrogen condition exhibit mixed phase of wurtzite+FFC, with preferential orientation along (002) corresponding to the hexagonal phase. It also demonstrated that at lower nitrogen environment, the transformation from mixed phase of wurtzite+FCC to a single phase of FCC–AlN occurs. FTIR spectroscopic analysis was employed to determine the nature of chemical bonding and vibrational phonon modes. Its spectra depicted a dominant peak around 850 cm−1 corresponding to the longitudinal optical (LO) mode of vibration. A shift in the LO mode peak toward lower wavenumbers was noticed with the decrease of nitrogen fraction, illustrating the decline of nitrogen concentration in the deposited AlN films. The 75% nitrogen fraction appeared critical for AlN film properties, such as shifting of mixed (wurtzite+FCC) phase to single FCC–Al(N), a sharp drop of stoichiometric ratio and deposition rate. Measurements of resistivity recorded by the four probe method depicted a sharp decline in the corresponding growth condition. 相似文献
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《Materials Science in Semiconductor Processing》2012,15(1):6-10
Aluminum nitride (AlN) film, which is being investigated as a possible passivation layer in inkjet printheads, was deposited on a Si (1 0 0) substrate at 400 °C by radio frequency (RF) magnetron sputtering using an AlN ceramic target. Dependence on various reactive gas compositions (Ar, Ar:H2, Ar:N2) during sputtering was investigated to determine thermal conductivity. The crystallinity, grain size, and Al–N bonding changes by the gas compositions were examined and are discussed in relation to thermal conductivity. Using an Ar and 4% H2, the deposited AlN films were crystalline with larger grains. Using a higher nitrogen concentration of 10%, a near amorphous phase, finer morphology, and an enhanced Al–N bonding ratio were achieved. A high thermal conductivity of 134 W/mk, which is nine times higher than that of the conventional Si3N4 passivation film, was obtained with a 10% N2 reactive gas mixture. A high Al–N bonding ratio in AlN film is considered the most important factor for higher thermal conductivity. 相似文献
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激光熔蚀反应淀积AlN薄膜残余应力及热稳定性的研究 总被引:2,自引:1,他引:1
激光熔蚀反应淀积于 Si(10 0 ) ,Si(111)基底上的 Al N薄膜是高质量高取向性的 Al N多晶膜 ,薄膜与基底的取向关系为 Al N(10 0 )∥ Si(10 0 ) ,Al N(110 )∥ Si(111)。薄膜具有较低的残余应力和较好的热稳定性。实验结果表明 ,当氮气压强和放电电压分别为 10 0× 133.33Pa和 6 50 V时 ,薄膜的残余应力低于 3GPa。此样品在纯氧环境 50 0℃时 ,经过 3h的退火 ,红外吸收谱检测未发现有Al2 O3 特征峰出现。对 Al N/Cu双层膜的研究表明所制备的 Al N薄膜在金属薄膜的防护上也有潜在的应用价值。 相似文献
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采用机械球磨法,以Al(H2PO4)3和H3PO4为改性剂,制备了具有较高抗水解能力的AlN粉末,研究了改性AlN粉末在水基球磨过程中的稳定性。通过XRD,FT-IR,SEM,TG-DSC和氮含量测定对改性前后AlN粉末进行了表征。改性AlN粉末在60℃水中浸泡24h后,其w(N)为32.97%,且其XRD谱中未发现Al(OH)3相,其抗水解能力得到显著提高。改性AlN粉末在水中高速球磨16h后,其w(N)约为32%,AlN悬浮液的pH值约为6,说明改性AlN粉末在水中球磨过程中具有较好的稳定性。 相似文献
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添加NH4Cl到经由高能球磨制得的机械活化铝粉中后,铝粉在空气中于室温下即可发生自燃反应.本研究通过含有不同量NH4Cl的机械活化铝粉的自燃制得了Al2O3-AlN疏松粉末,并研究了NH4CL添加量对燃烧产物成分和结构的控制.结果表明:NH4Cl不仅控制了产物的形貌,而且改变了铝粉的氮化初理.在NH4Cl添加量为3%~... 相似文献
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MOCVD生长高Al组分AlGaN材料研究 总被引:1,自引:0,他引:1
报道了用MOCVD在蓝宝石衬底上生长日盲型AlGaN基紫外探测器用的高质量AlN、AlGaN材料。通过优化AlN、AlGaN生长的工艺条件,如生长温度、生长压力及Ⅴ/Ⅲ比等,得到了器件级高质量的AlN、AlGaN外延材料。AlN外延膜X射线双晶衍射ω(002)面扫描曲线半高宽为97",ω(102)面扫描曲线半高宽为870",Al0.6Ga0.4N外延膜双晶衍射ω(002)面扫描曲线半高宽为240";使用原子力显微镜(AFM)对两种样品5μm×5μm区域的表面平整度进行了表征,AlN外延膜的粗糙度(Rms)为8.484nm,Al0.6Ga0.4N外延膜的粗糙度为1.104nm;透射光谱测试显示AlN和Al0.6Ga0.4N吸收带边分别为205nm和266nm,且都非常陡峭。 相似文献
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LIUBao-lin 《半导体光子学与技术》2002,8(1):1-8
An AIN Layer grown by an ALE has been developed to improve the growth quality of GaN ON Al2O3 substrate by low-pressure metalorganic vapor phase epitaxy(LP-MOVPE).An ALE AIN layer grown on Al2O3 substrate has a high quality and the structure is similar to GaN, this AIN layer can release the stress between Al2O3 substrate and GaN epilayer.By using this method, the orientation of substrate is extended to GaN epilayer, and the column tilt and the twist are improved, so as to obtain the device-quality GaN. 相似文献