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1.
The \(L_{1}\)-norm constrained normalized subband adaptive filter with variable norm-bound parameter \((L_{1}\hbox {NCNSAF-V})\) algorithm and its variable step size version VSS-\(L_{1}\)NCNSAF-V are proposed in this paper, which are more superior to some existing algorithms in the sparse system. The proposed \(L_{1}\)NCNSAF-V is derived by using the Lagrange multiplier method, and the VSS-\(L_{1}\)NCNSAF-V is obtained by minimizing the statistical square of the Euclidean norm of the noise-free subband a posterior error vector. The simulation results demonstrate that the proposed algorithms achieve good performance.  相似文献   

2.
This paper addresses the problem of robust \(L_2{-}L_\infty \) control in delta domain for a class of Takagi–Sugeno (TS) fuzzy systems with interval time-varying delays and disturbance input. In particular, the system under study involves state time delay, uncertainties and fast sampling period \(\mathcal {T}\). The main aim of this work was to design a \(L_2{-}L_\infty \) controller such that the proposed TS fuzzy system is robustly asymptotically stable with a \(L_2{-}L_\infty \) prescribed performance level \(\gamma >0\). Based on the proper Lyapunov–Krasovskii functional (LKF) involving lower and upper bound of time delay and free-weighting technique, a new set of delay-dependent sufficient conditions in terms of linear matrix inequalities (LMIs) are established for obtaining the required result. The result reveals that the asymptotic stability is achieved quickly when the sampling frequency is high. Finally, a numerical example based on the truck–trailer model is given to demonstrate the effectiveness and potential of the proposed design technique.  相似文献   

3.
This paper investigates the stability and \(L_1\)-gain control of two-dimensional (2-D) continuous positive switched delayed systems. Firstly, by constructing an appropriate co-positive Lyapunov–Krasovskii functional, a sufficient condition for asymptotical stability of the system under consideration is derived. Secondly, \(L_1\)-gain performance analysis of the underlying system is investigated. Thirdly, a design methodology for state feedback controller is proposed to ensure that the closed-loop system is asymptotically stable with \(L_1\)-gain performance. Finally, an example is provided to show the effectiveness of the proposed method.  相似文献   

4.
The sparsity adaptive matching pursuit (SAMP) algorithm has an advantage of reconstructing signals without the prior information of the sparsity level. However, the required computational power is high and the reconstruction performance is not satisfied for perturbed systems. This is because this algorithm is based on the expectation maximization algorithm. Also, a pseudo-inverse operation of the matrix is employed to select the element candidates of the sensing matrix in each iteration. In this paper, a mixed \(L_{1}\) norm and \(L_{2}\) norm regularized algorithm is proposed to address these issues. Similar to the SAMP algorithm, the regularized algorithm also reconstructs the signals without the prior information of the sparsity level. Different from the SAMP algorithm, the element candidates of the sensing matrix are selected by the \(L_{2}\) norm strategy in each iteration. Experiments are performed on an ideal simulation system, a perturbed simulation system and real image reconstruction. Simulation and real image reconstruction experimental results indicate that the regularized algorithm has lower computational power than the SAMP algorithm. Also, the proposed algorithm has better reconstruction performance on the perturbed system compared to the SAMP algorithm.  相似文献   

5.
In this paper a novel high-frequency fully differential pure current mode current operational amplifier (COA) is proposed that is, to the authors’ knowledge, the first pure MOSFET Current Mode Logic (MCML) COA in the world, so far. Doing fully current mode signal processing and avoiding high impedance nodes in the signal path grant the proposed COA such outstanding properties as high current gain, broad bandwidth, and low voltage and low-power consumption. The principle operation of the block is discussed and its outstanding properties are verified by HSPICE simulations using TSMC \(0.18\,\upmu \hbox {m}\) CMOS technology parameters. Pre-layout and Post-layout both plus Monte Carlo simulations are performed under supply voltages of \(\pm 0.75\,\hbox {V}\) to investigate its robust performance at the presence of fabrication non-idealities. The pre-layout plus Monte Carlo results are as; 93 dB current gain, \(8.2\,\hbox {MHz}\,\, f_{-3\,\text {dB}}, 89^{\circ }\) phase margin, 137 dB CMRR, 13 \(\Omega \) input impedance, \(89\,\hbox {M}\Omega \) output impedance and 1.37 mW consumed power. Also post-layout plus Monte Carlo simulation results (that are generally believed to be as reliable and practical as are measuring ones) are extracted that favorably show(in abovementioned order of pre-layout) 88 dB current gain, \(6.9\,\hbox {MHz} f_{-3\text {db}} , 131^{\circ }\) phase margin and 96 dB CMRR, \(22\,\Omega \) input impedance, \(33\,\hbox {M}\Omega \) output impedance and only 1.43 mW consumed power. These results altogether prove both excellent quality and well resistance of the proposed COA against technology and fabrication non-idealities.  相似文献   

6.
It is very challenging task to achieve good Quality of Services (QoS) in highly dynamic topology of Vehicular Ad hoc NETwork (VANET). The Average Connected Coverage (ACC) is very important QoS of VANET to spread emergency information. This paper proposes Connected_Cover algorithm to analyze ACC of VANET using Genetic Algorithm Multi Objective optimization (gamultiobj) tool. Gamultiobj tool generates Pareto front in MATLAB. Using Pareto fronts this paper select transmission range \(TR_{sel}\) and Vehicle density \(Vd_{sel}\) having ACC \(\ge\) 95%. This \(Vd_{sel}\) must have ACC \(\ge\) 98% when transmission range is 1000 m. Further, the \(TR_{sel}\) and \(Vd_{sel}\) is used in proposed Adaptive Transmission Power (ATP) scheme to improve QoS of VANET. Adaptive transmission power scheme for transmission range 400 and 250 m enhanced the Packet Delivery Fraction (PDF), increased the throughput, decreased the per hop End-to-End Transmission Delay (EETxD) and reduced the retransmissions as compared to Fixed Transmission Power schemes for VANETs safety and warning applications. This paper achieved the PDF and throughput with 250 m ATP scheme higher than 400 m Fixed Power (FP) scheme; also PDF and throughput with 400 m ATP scheme similar to 1000 m FP and ATP scheme for lesser number of nodes (10–50 nodes). The scope of this paper also discusses the number of Road Side Unit (RSU) required in VANET to reduce the cost of system on the basis of ACC. Performance of the system is analyzed using NS-2.35 simulator.  相似文献   

7.
The flash-evaporation technique was utilized to fabricate undoped 1.35-μm and 1.2-μm thick lead iodide films at substrate temperatures \( T_{\rm{s}} = 150 \)°C and 200°C, respectively. The films were deposited onto a coplanar comb-like copper (Cu-) electrode pattern, previously coated on glass substrates to form lateral metal–semiconductor–metal (MSM-) structures. The as-measured constant-temperature direct-current (dc)-voltage (\( I\left( {V;T} \right) - V \)) curves of the obtained lateral coplanar Cu-PbI2-Cu samples (film plus electrode) displayed remarkable ohmic behavior at all temperatures (\( T = 18 - 90\,^\circ {\hbox{C}} \)). Their dc electrical resistance \( R_{\rm{dc}} (T \)) revealed a single thermally-activated conduction mechanism over the temperature range with activation energy \( E_{\rm{act}} \approx 0.90 - 0.98 \,{\hbox{eV}} \), slightly less than half of room-temperature bandgap energy \( E_{\rm{g}} \) (\( \approx \,2.3\, {\hbox{eV}} \)) of undoped 2H-polytype PbI2 single crystals. The undoped flash-evaporated \( {\hbox{PbI}}_{\rm{x}} \) thin films were homogeneous and almost stoichiometric (\( x \approx 1.87 \)), in contrast to findings on lead iodide films prepared by other methods, and were highly crystalline hexagonal 2H-polytypic structure with c-axis perpendicular to the surface of substrates maintained at \( T_{\rm{s}} { \gtrsim }150^\circ {\hbox{C}} \). Photoconductivity measurements made on these lateral Cu-PbI2-Cu-structures under on–off visible-light illumination reveal a feeble photoresponse for long wavelengths (\( \lambda > 570\,{\hbox{nm}} \)), but a strong response to blue light of photon energy \( E_{\rm{ph}} \) \( \approx \,2.73 \, {\hbox{eV}} \) (\( > E_{\rm{g}} \)), due to photogenerated electron–hole (e–h) pairs via direct band-to-band electronic transitions. The constant-temperature/dc voltage current–time \( I\left( {T,V} \right) - t \) curves of the studied lateral PbI2 MSM-structures at low ambient temperatures (\( T < 50^\circ {\hbox{C}} \)), after cutting off the blue-light illumination, exhibit two trapping mechanisms with different relaxation times. These strongly depend on \( V \) and \( T \), with thermally generated charge carriers in the PbI2 mask photogenerated (e–h) pairs at higher temperatures.  相似文献   

8.
The problem of permanent fault diagnosis has been discussed widely, and the diagnosability of many well-known networks have been explored. Faults of a multiprocessor system generally include permanent and intermittent, with intermittent faults regarded as the most challenging to diagnose. In this paper, we investigate the intermittent fault diagnosability of hyper Petersen networks. First, we derive that an \(n\)-dimensional hyper Petersen network \(HP_{n}\) with fault-free edges is \((n - 1)_{i}\)-diagnosable under the PMC model. Then, we investigate the intermittent fault diagnosability of \(HP_{n}\) with faulty edges under the PMC model. Finally, we prove that an \(n\)-dimensional hyper Petersen network \(HP_{n}\) is \((n - 2)_{i}\)-diagnosable under the MM* model.  相似文献   

9.
Differential thermal analysis (DTA) has been conducted on directionally solidified near-eutectic Sn-3.0 wt.%Ag-0.5 wt.%Cu (SAC), SAC \(+\) 0.2 wt.%Sb, SAC \(+\) 0.2 wt.%Mn, and SAC \(+\) 0.2 wt.%Zn. Laser ablation inductively coupled plasma mass spectroscopy was used to study element partitioning behavior and estimate DTA sample compositions. Mn and Zn additives reduced the undercooling of SAC from 20.4\(^\circ \hbox {C}\) to \(4.9^\circ \hbox {C}\) and \(2^\circ \hbox {C}\), respectively. Measurements were performed at cooling rate of \(10^\circ \hbox {C}\) per minute. After introducing 200 ppm \(\hbox {O}_2\) into the DTA, this undercooling reduction ceased for SAC \(+\) Mn but persisted for SAC \(+\) Zn.  相似文献   

10.
The electronic and optical properties of armchair MoS\(_{2}\) nanoribbons with multiple stacking faults are investigated using first-principles calculations. It’s interesting that the band gaps approach zero for armchair MoS\(_{2}\) nanoribbons with two and four stacking faults. The gaps of armchair MoS\(_{2}\) nanoribbons with one stacking fault and three stacking faults are converged to 0.46 eV and 0.36 eV, respectively, which is smaller than perfect MoS\(_{2}\) nanoribbons. The partial charge density of armchair MoS\(_{2}\) nanoribbons with two stacking faults shows that the defect levels are originated from stacking faults. The frequency-dependent optical response (dielectric function, absorption, reflectance and electron energy loss spectra) is also presented. The optical results of monolayer MoS\(_{2}\) are in agreement with previous study. The peaks in the imaginary part of perfect armchair MoS\(_{2}\) nanoribbons are about 2.8 eV, 4.0 eV and 5.4 eV and the peaks of the imaginary part of armchair MoS\(_{2}\) nanoribbons with stacking faults are mainly 2.8 eV and 5.4 eV. They are independent of ribbon width. The peaks in electron energy loss spectra move toward larger wavelengths (redshift) due to the introduction of stacking faults.  相似文献   

11.
In this work, we present a self cascode based ultra-wide band (UWB) low noise amplifier (LNA) with improved bandwidth and gain for 3.1–10.6 GHz wireless applications. The self cascode (SC) or split-length compensation technique is employed to improve the bandwidth and gain of the proposed LNA. The improvement in the bandwidth of SC based structure is around 1.22 GHz as compared to simple one. The significant enhancement in the characteristics of the introduced circuit is found without extra passive components. The SC based CS–CG structure in the proposed LNA uses the same DC current for operating first stage transistors. In the designed UWB LNA, a common source (CS) stage is used in the second stage to enhance the overall gain in the high frequency regime. With a standard 90 nm CMOS technology, the presented UWB LNA results in a gain \(\hbox {S}_{21}\) of \(20.10 \pm 1.65\,\hbox {dB}\) across the 3.1–10.6 GHz frequency range, and dissipating 11.52 mW power from a 1 V supply voltage. However, input reflection, \(\hbox {S}_{11}\), lies below \(-\,10\) dB from 4.9–9.1 GHz frequency. Moreover, the output reflection (\(\hbox {S}_{22}\)) and reverse isolation (\(\hbox {S}_{12}\)), is below \(-\,10\) and \(-\,48\) dB, respectively for the ultra-wide band region. Apart from this, the minimum noise figure (\(\hbox {NF}_{min}\)) value of the proposed UWB LNA exists in the range of 2.1–3 dB for 3.1–10.6 GHz frequency range with a a small variation of \(\pm \,0.45\,\hbox {dB}\) in its \(\hbox {NF}_{min}\) characteristics. Linearity of the designed LNA is analysed in terms of third order input intercept point (IIP3) whose value is \(-\,4.22\) dBm, when a two tone signal is applied at 6 GHz with a spacing of 10 MHz. The other important benefits of the proposed circuit are its group-delay variation and gain variation of \(\pm \,115\,\hbox {ps}\) and \(\pm \,1.65\,\hbox {dB}\), respectively.  相似文献   

12.
13.
This paper presents a capacitor-free low dropout (LDO) linear regulator based on a dual loop topology. The regulator utilizes two feedback loops to satisfy the challenges of hearing aid devices, which include fast transient performance and small voltage spikes under rapid load-current changes. The proposed design works without the need of a decoupling capacitor connected at the output and operates with a 0–100 pF capacitive load. The design has been taped out in a \(0.18\,\upmu \hbox {m}\) CMOS process. The proposed regulator has a low component count, area of \(0.012\, \hbox {mm}^2\) and is suitable for system-on-chip integration. It regulates the output voltage at 0.9 V from a 1.0–1.4 V supply. The measured results for a current step load from 250 to 500 \(\upmu \hbox {A}\) with a rise and fall time of \(1.5\,\upmu \hbox {s}\) are an overshoot of 26 mV and undershoot of 26 mV with a settling time of \(3.5\,\upmu \hbox {s}\) when \({C_L}\) between 0 and 100 pF. The proposed LDO regulator consumes a quiescent current of only \(10.5\,\upmu \hbox {A}\). The design is suitable for application with a current step edge time of 1 ns while maintaining \(\Delta V_{out}\) of 64 mV.  相似文献   

14.
The results of an ab?initio modelling of aluminium substitutional impurity (\({\hbox {Al}}_{\rm Ge}\)), aluminium interstitial in Ge [\({\hbox {I}}_{\rm Al}\) for the tetrahedral (T) and hexagonal (H) configurations] and aluminium interstitial-substitutional pairs in Ge (\({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\)) are presented. For all calculations, the hybrid functional of Heyd, Scuseria, and Ernzerhof in the framework of density functional theory was used. Defects formation energies, charge state transition levels and minimum energy configurations of the \({\hbox {Al}}_{\rm Ge}\), \({\hbox {I}}_{\rm Al}\) and \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) were obtained for ?2, ?1, 0, \(+\)1 and \(+\)2 charge states. The calculated formation energy shows that for the neutral charge state, the \({\hbox {I}}_{\rm Al}\) is energetically more favourable in the T than the H configuration. The \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) forms with formation energies of ?2.37 eV and ?2.32 eV, when the interstitial atom is at the T and H sites, respectively. The \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) is energetically more favourable when the interstitial atom is at the T site with a binding energy of 0.8 eV. The \({\hbox {I}}_{\rm Al}\) in the T configuration, induced a deep donor (\(+\)2/\(+1\)) level at \(E_{\mathrm {V}}+0.23\) eV and the \({\hbox {Al}}_{\rm Ge}\) induced a single acceptor level (0/?1) at \(E_{\mathrm {V}}+0.14\) eV in the band gap of Ge. The \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) induced double-donor levels are at \(E_{\rm V}+0.06\) and \(E_{\rm V}+0.12\) eV, when the interstitial atom is at the T and H sites, respectively. The \({\hbox {I}}_{\rm Al}\) and \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) exhibit properties of charge state-controlled metastability.  相似文献   

15.
In this work, two-channel perfect reconstruction quadrature mirror filter (QMF) bank has been proposed based on the prototype filter using windowing method. A novel window function based on logarithmic function along with the spline function is utilized for the design of prototype filter. The proposed window has a variable parameter ‘\(\alpha \)’, which varies the peak side lobe level and rate of fall-off side lobe level which in turn affects the peak reconstruction error (PRE) and amplitude distortion (\(e_{am}\)) of the QMF bank . The transition width of the prototype is controlled by the spline function using the parameter ‘\(\mu \)’. The perfect reconstruction condition is satisfied by setting the cutoff frequency (\(\omega _{c}\)) of the prototype low-pass filter at ‘\(\pi /2\)’. The performance of the proposed design method has been evaluated in terms of mean square error in the pass band, mean square error in the stop band, first side lobe attenuation (\(A_{1}\)), peak reconstruction error (PRE) and amplitude error (\(e_{am}\)) for different values of ‘\(\alpha \)’ and ‘\(\mu \)’. The results are provided and compared with the existing methods.  相似文献   

16.
The electrochemical, structural and magnetic properties of CoCu/Cu multilayers electrodeposited at different cathode potentials were investigated from a single bath. The Cu layer deposition potentials were selected as \(-\,0.3,\,\hbox {V}\) \(-\,0.4\,\,\hbox {V}\), and \(-\,0.5\,\hbox {V}\) with respect to saturated calomel electrode (SCE) while the Co layer deposition potential was constant at \(-\,1.5\,\hbox {V}\) versus SCE. For the electrochemical analysis, the current-time transients were obtained. The amount of noble non-magnetic (Cu) metal materials decreased with the increase of deposition potentials due to anomalous codeposition. Further, current-time transient curves for the Co layer deposition and capacitance were calculated. In the structural analysis, the multilayers were found to be polycrystalline with both Co and Cu layers adopting the face-centered cubic structure. The (111) peak shifts towards higher angle with the increase of the deposition potentials. Also, the lattice parameters of the multilayers decrease from 0.3669 nm to 0.3610 nm with the increase of the deposition potentials from \(-\,0.3\,\hbox {V}\) to \(-\,0.5\,\hbox {V}\), which corresponds to the bulk values of Cu and Co, respectively. The electrochemical and structural results demonstrate that the amount of Co atoms increased and the Cu atoms decreased in the layers with the increase of deposition potentials due to anomalous codeposition. For magnetic measurements, the saturation magnetizations, \(M_s\) obtained from the magnetic curves of the multilayers were obtained as 212 kA/m, 276 kA/m, and 366 kA/m with \(-\,0.3\,\hbox {V}\), \(-\,0.4\,\hbox {V}\), and \(-\,0.5\,\hbox {V}\) versus SCE, respectively. It is seen that the \(M_s\) values increased with the increase of the deposition potentials confirming the increase of the Co atoms and decrease of the Cu amount. The results of electrochemical and structural analysis show that the deposition potentials of non-magnetic layers plays important role on the amount of magnetic and non-magnetic materials in the layers and thus on the magnetic properties of the multilayers.  相似文献   

17.
The throughput capacity of arbitrary wireless networks under the physical Signal to Interference Plus Noise Ratio (SINR) model has received much attention in recent years. In this paper, we investigate the question of how much the worst-case performance of uniform and non-uniform power assignments differ under constraints such as a bound on the area where nodes are distributed or restrictions on the maximum power available. We determine the maximum factor by which a non-uniform power assignment can outperform the uniform case in the SINR model. More precisely, we prove that in one-dimensional settings the capacity of a non-uniform assignment exceeds a uniform assignment by at most a factor of \(O(\log L_{\max })\) when the length of the network is \(L_{\max }\). In two-dimensional settings, the uniform assignment is at most a factor of \(O(\log P_{\max })\) worse than the non-uniform assignment if the maximum power is \(P_{\max }\). We provide algorithms that reach this capacity in both cases. These bounds are tight in the sense that previous work gave examples of networks where the lack of power control causes a performance loss in the order of these factors. To complement our theoretical results and to evaluate our algorithms with concrete input networks, we carry out simulations on random wireless networks. The results demonstrate that the link sets generated by the algorithms contain around 20–35 % of all links. As a consequence, engineers and researchers may prefer the uniform model due to its simplicity if this degree of performance deterioration is acceptable.  相似文献   

18.
A low voltage self-biased high-swing cascode current mirror using bulk-driven quasi-floating gate MOSFET is proposed in this paper. The proposed current mirror bandwidth and especially the output impedance show a significant improvement compared to prior arts. The current mirror presented is designed using bulk-driven and bulk-driven quasi-floating gate N-channel MOS transistors, which helped it to operate at very low supply voltage of \({\pm }0.2\,\hbox {V}\). To achieve high output resistance, the current mirror uses regulated cascode stage followed by super cascode architecture. The small-signal analysis carried out proves the improvement achieved by proposed current mirror. The current mirror circuit operates well for input current ranging from 0 to \(250\,{\upmu }\mathrm{A}\) with good linearity and shows the bandwidth of 285 MHz. The input and output resistances are found as \(240\,\Omega \) and \(19.5\,\hbox {G}\Omega \), respectively. Further, the THD analysis and Monte Carlo simulations carried prove the robustness of proposed current mirror. The complete analysis is done using HSpice on UMC \(0.18\,\upmu \mathrm{m}\) technology.  相似文献   

19.
The r-round (iterated) Even–Mansour cipher (also known as key-alternating cipher) defines a block cipher from r fixed public n-bit permutations \(P_1,\ldots ,P_r\) as follows: Given a sequence of n-bit round keys \(k_0,\ldots ,k_r\), an n-bit plaintext x is encrypted by xoring round key \(k_0\), applying permutation \(P_1\), xoring round key \(k_1\), etc. The (strong) pseudorandomness of this construction in the random permutation model (i.e., when the permutations \(P_1,\ldots ,P_r\) are public random permutation oracles that the adversary can query in a black-box way) was studied in a number of recent papers, culminating with the work of Chen and Steinberger (EUROCRYPT 2014), who proved that the r-round Even–Mansour cipher is indistinguishable from a truly random permutation up to \(\mathcal {O}(2^{\frac{rn}{r+1}})\) queries of any adaptive adversary (which is an optimal security bound since it matches a simple distinguishing attack). All results in this entire line of work share the common restriction that they only hold under the assumption that the round keys \(k_0,\ldots ,k_r\) and the permutations \(P_1,\ldots ,P_r\) are independent. In particular, for two rounds, the current state of knowledge is that the block cipher \(E(x)=k_2\oplus P_2(k_1\oplus P_1(k_0\oplus x))\) is provably secure up to \(\mathcal {O}(2^{2n/3})\) queries of the adversary, when \(k_0\), \(k_1\), and \(k_2\) are three independent n-bit keys, and \(P_1\) and \(P_2\) are two independent random n-bit permutations. In this paper, we ask whether one can obtain a similar bound for the two-round Even–Mansour cipher from just one n-bit key and one n-bit permutation. Our answer is positive: When the three n-bit round keys \(k_0\), \(k_1\), and \(k_2\) are adequately derived from an n-bit master key k, and the same permutation P is used in place of \(P_1\) and \(P_2\), we prove a qualitatively similar \(\widetilde{\mathcal {O}}(2^{2n/3})\) security bound (in the random permutation model). To the best of our knowledge, this is the first “beyond the birthday bound” security result for AES-like ciphers that does not assume independent round keys.  相似文献   

20.
This paper proposes a feedback time difference amplifier (FTDA) that achieves linear, controllable gain and changeable input range for different time difference gains. The proposed FTDA consists of two identical feedback output generators. The feedback output generator achieves a linear input–output transfer characteristic by employing two p-type keepers for time gain feedback control. Its validity was demonstrated using \({0.13}\, {\upmu \hbox {m}}\) SiGe BiCMOS process. The power consumption is \(91.54 \,{\upmu \hbox {W}}\) for the highest gain with input signals at \({2}\,\hbox {MHz}\). The gain can be controlled from 25.06 to \(734.9\,{\hbox {s/s}}\) within \(40 \,\hbox {ps}\) input time interval.  相似文献   

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