The scanning optical microscope (Extracts on near-field microscopy)—from a 1975 report

The following consists of extracts concerning near-field microscopy from a Progress Report prepared in April 1975 as Oxford University Engineering Laboratory Report No. 1883/77, describing work initiated by the late Professor R. Kompfner. Preliminary experimental work on near-field microscopy is outlined, and a theory for contrast formation is presented.     

太赫兹光致力近场显微成像技术及应用研究

设计并搭建了太赫兹光致力显微成像系统(THz PiFM),首次在太赫兹波段实现了近场光力纳米显微成像测量。该系统基于原子力显微镜,利用探针对所受力的灵敏检测能力,通过探测探针与样品之间近场偶极相互作用产生的光场梯度力,实现无探测器的太赫兹近场显微成像。利用该系统,对可见光激发下的单层MoS₂晶粒进行了近场纳米显微成像表征,并分析了晶粒边缘近场光力信号增强的机制。研究结果表明,THz PiFM对二维材料中的载流子具有高灵敏的探测能力。与传统的太赫兹近场显微成像技术相比,THz PiFM无需太赫兹探测器,而且可获得更加优越的空间分辨率和成像信噪比,是一种低成本、高性能的新型太赫兹近场显微成像技术。     

High-resolution constant-height imaging with apertured silicon cantilever probes

We present high-resolution aperture probes based on non-contact silicon atomic force microscopy (AFM) cantilevers for simultaneous AFM and near-infrared scanning near-field optical microscopy (SNOM). For use in near-field optical microscopy, conventional AFM cantilevers are modified by covering their tip side with an opaque aluminium layer. To fabricate an aperture, this metal layer is opened at the end of the polyhedral probe using focused ion beams (FIB). Here we show that apertures of less than 50 nm can be obtained using this technique, which actually yield a resolution of about 50 nm, corresponding to λ/20 at the wavelength used. To exclude artefacts induced by distance control, we work in constant-height mode. Our attention is particularly focused on the distance dependence of resolution and to the influence of slight cantilever bending on the optical images when scanning at such low scan heights, where first small attractive forces exerted on the cantilever become detectable.     

Optoelectronic detector probes for scanning near-field optical microscopy

A brief explanation of the optoelectronic probe concept and a comparison between the implementation of passive waveguide probes and optoelectronic probes in scanning near-field optical microscopy (SNOM) is presented. The first probe realizations using cleaved semiconductor crystals and the work at present in progress using microfabricated Si pyramids are described. These crystals with evaporated metal electrodes forming a slit aperture with subwave-length dimensions work as metal–semiconductor–metal photodetectors. Their optical detection behaviour is investigated by measuring the intensity distribution of a laser focal point. Measurements where the external bias voltage is changed show that it is possible to modify the detection behaviour of the device because of the varying depletion widths. The last part of the article describes a concept where pyramidal probes should function simultaneously as sensors for scanning force microscopy (SFM) to measure topography and as optoelectronic probes for scanning near-field optoelectronic microscopy (SNOEM).     

Apertureless near-field scanning Raman microscopy using reflection scattering geometry

The combination of near-field scanning optical microscopy and Raman spectroscopy provides chemical/structural specific information with nanometer spatial resolution, which are critically important for a wide range of applications, including the study of Si devices, nanodevices, quantum dots, single molecules of biological samples. In this paper, we describe our near-field Raman study using apertureless probes. Our system has two important features, critical to practical applications. (1) The near-field Raman enhancement was achieved by Ag coating of the metal probes, without any preparation of the sample, and (2) while all other apertureless near-field Raman systems were constructed in transmission mode, our system works in the reflection mode, making near-field Raman study a reality for any samples. We have obtained the first 1D Raman mapping of a real Si device with 1s exposure time. This is a very significant development in near-field scanning Raman microscopy as it is the first demonstration that this technique can be used for imaging purpose because of the short integration time. In addition, the metal tips used in our set-up can be utilized to make simultaneous AFM and electrical mappings such as resistance and capacitance that are critical parameters for device applications.     

太赫兹近场光学亚表面检测技术研究

研究了太赫兹散射式扫描近场光学显微镜（Terahertz scattering-type scanning near-field optical microscopy,THz s-SNOM）对亚表面金属微纳结构的显微成像检测。首次采用自主搭建的THz s-SNOM系统对表面覆盖了六方氮化硼薄膜的金微米线进行太赫兹近场显微测量,获得了具有纳米量级空间分辨率和较高对比度的近场显微图。结合全波数值模拟,分析了THz s-SNOM探测亚表面金属微纳结构的空间分辨率、近场散射信号强度和成像对比度。研究表明,THz s-SNOM具有优良的亚表面显微成像检测能力,可应用于微纳电子器件的亚表面结构表征和缺陷检测。     

Near-field second harmonic imaging of the c/a/c/a polydomain structure of epitaxial PbZrxTi1–xO3 thin films

Near-field optical second harmonic microscopy has been applied to imaging of the c/a/c/a polydomain structure of epitaxial PbZr _x Ti_{1– x} O₃ thin films in the 0 <  x  < 0.4 range. Comparison of the near-field optical images and the results of atomic force microscopy and X-ray diffraction studies show that an optical resolution of the order of 100 nm is achieved. Symmetry properties of the near-field second harmonic signal allow us to obtain good optical contrast between the local second harmonic generation in c- and a-domains. Experimentally measured near-field second harmonic images have been compared with the results of theoretical calculations. Good agreement between theory and experiment is demonstrated.     

Single molecule mapping of the optical field distribution of probes for near-field microscopy

The most difficult task in near-field scanning optical microscopy (NSOM) is to make a high quality subwavelength aperture probe. Recently, we have developed high definition NSOM probes by focused ion beam (FIB) milling. These probes have a higher brightness, better polarization characteristics, better aperture definition and a flatter end face than conventional NSOM probes. We have determined the quality of these probes in four independent ways: by FIB imaging and by shear-force microscopy (both providing geometrical information), by far-field optical measurements (yielding throughput and polarization characteristics), and ultimately by single molecule imaging in the near-field. In this paper, we report on a new method using shear-force microscopy to study the size of the aperture and the end face of the probe (with a roughness smaller than 1.5 nm). More importantly, we demonstrate the use of single molecules to measure the full three-dimensional optical near-field distribution of the probe with molecular spatial resolution. The single molecule images exhibit various intensity patterns, varying from circular and elliptical to double arc and ring structures, which depend on the orientation of the molecules with respect to the probe. The optical resolution in the measurements is not determined by the size of the aperture, but by the high optical field gradients at the rims of the aperture. With a 70 nm aperture probe, we obtain fluorescence field patterns with 45 nm FWHM. Clearly, this unprecedented near-field optical resolution constitutes an order of magnitude improvement over far-field methods like confocal microscopy.     

Single molecule mapping of the optical field distribution of probes for near-field microscopy

The most difficult task in near-field scanning optical microscopy (NSOM) is to make a high quality subwavelength aperture probe. Recently, we have developed high definition NSOM probes by focused ion beam (FIB) milling. These probes have a higher brightness, better polarization characteristics, better aperture definition and a flatter end face than conventional NSOM probes. We have determined the quality of these probes in four independent ways: by FIB imaging and by shear-force microscopy (both providing geometrical information), by far-field optical measurements (yielding throughput and polarization characteristics), and ultimately by single molecule imaging in the near-field. In this paper, we report on a new method using shear-force microscopy to study the size of the aperture and the end face of the probe (with a roughness smaller than 1.5 nm). More importantly, we demonstrate the use of single molecules to measure the full three-dimensional optical near-field distribution of the probe with molecular spatial resolution. The single molecule images exhibit various intensity patterns, varying from circular and elliptical to double arc and ring structures, which depend on the orientation of the molecules with respect to the probe. The optical resolution in the measurements is not determined by the size of the aperture, but by the high optical field gradients at the rims of the aperture. With a 70 nm aperture probe, we obtain fluorescence field patterns with 45 nm FWHM. Clearly, this unprecedented near-field optical resolution constitutes an order of magnitude improvement over far-field methods like confocal microscopy.     

单层MoS2和WS2的太赫兹近场显微成像研究

采用太赫兹散射式扫描近场光学显微镜(THz s-SNOM)研究了化学气相沉积法制备的单层MoS₂和WS₂晶粒的太赫兹近场响应。在没有可见光激发时,未探测到可分辨的太赫兹近场响应,说明晶粒具有较低的掺杂载流子浓度。有可见光激发时,由于光生载流子的太赫兹近场响应,能够测得与晶粒轮廓完全吻合的太赫兹近场显微图。在相同的光激发条件下,MoS₂的太赫兹近场响应强于WS₂,反映了两者之间载流子浓度或迁移率的差异。研究结果表明,THz s-SNOM兼具超高的空间分辨率和对光生载流子的灵敏探测能力,对二维半导体材料和器件光电特性的微观机理研究具有独特的优势。     

A single gold particle as a probe for apertureless scanning near-field optical microscopy

We report on the fabrication, characterization and application of a probe consisting of a single gold nanoparticle for apertureless scanning near-field optical microscopy. Particles with diameters of 100 nm have been successfully and reproducibly mounted at the end of sharp glass fibre tips. We present the first optical images taken with such a probe. We have also recorded plasmon resonances of gold particles and discuss schemes for exploiting the wavelength dependence of their scattering cross-section for a novel form of apertureless scanning near-field optical microscopy.     

High-Resolution Lithography with Near-Field Optical Microscopy

Scanning near-field optical microscopy (SNOM) is used for lithography to avoid the resolution limiting diffraction of conventional optical methods. We have expanded a commercial SNOM for writing even complex structures on the nanometer scale. Scanning near-field optical lithography (SNOL) has been applied to conventional resists to explore its potential and the possible combination with conventional optical lithography (mix and match technique).     

Characterization of the polarization sensitivity anisotropy of a near-field probe using phase measurements

Amplitude and phase measurements of the near-field generated by isolated subwavelength apertures in a gold film are presented. The near-field distribution of such a structure is complex and the measured signal strongly depends on the electric field components effectively detected by the experimental setup. By comparing this signal with 3D vectorial calculations we are able to determine which electric field components are effectively measured. The sensitivity of the phase distribution is key to this measurement. The proposed characterization technique should prove extremely useful to calibrate a Scanning near-field optical microscopy (SNOM) beforehand in order to retrieve quantitative information on the polarization of the field distribution under study.     

Enlarged atomic force microscopy scanning scope: novel sample-holder device with millimeter range

We propose a homemade sample-holder unit used for nanopositionning in two dimensions with a millimeter traveling range. For each displacement axis, the system includes a long range traveling stage and a piezoelectric actuator for accurate positioning. Specific electronics is integrated according to metrological considerations, enhancing the repeatability performances. The aim of this work is to demonstrate that near-field microscopy at the scale of a chip is possible. For this we chose to characterize highly integrated optical structures. For this purpose, the sample holder was integrated into an atomic force microscope. A millimeter scale topographical image demonstrates the overall performances of the combined system.     

Towards phonon photonics: scattering-type near-field optical microscopy reveals phonon-enhanced near-field interaction

Diffraction limits the spatial resolution in classical microscopy or the dimensions of optical circuits to about half the illumination wavelength. Scanning near-field microscopy can overcome this limitation by exploiting the evanescent near fields existing close to any illuminated object. We use a scattering-type near-field optical microscope (s-SNOM) that uses the illuminated metal tip of an atomic force microscope (AFM) to act as scattering near-field probe. The presented images are direct evidence that the s-SNOM enables optical imaging at a spatial resolution on a 10 nm scale, independent of the wavelength used (λ=633 nm and 10 μm). Operating the microscope at specific mid-infrared frequencies we found a tip-induced phonon-polariton resonance on flat polar crystals such as SiC and Si₃N₄. Being a spectral fingerprint of any polar material such phonon-enhanced near-field interaction has enormous applicability in nondestructive, material-specific infrared microscopy at nanoscale resolution. The potential of s-SNOM to study eigenfields of surface polaritons in nanostructures opens the door to the development of phonon photonics—a proposed infrared nanotechnology that uses localized or propagating surface phonon polaritons for probing, manipulating and guiding infrared light in nanoscale devices, analogous to plasmon photonics.     

Direct interpretation of near-field optical images

The interpretation of the detection process in near-field optical microscopy is reviewed on the basis of a discussion about the possibility of establishing direct comparisons between experimental images and the solutions of Maxwell equations or the electromagnetic local density of states. On the basis of simple physical arguments, it is expected that the solutions of Maxwell equations should agree with images obtained by collecting mode near-field microscopes, while the electromagnetic local density of states should be considered to provide a practical interpretation of illumination mode near-field microscopes.
We review collecting mode near-field microscope images where the conditions to obtain good agreement with the solutions of Maxwell equations have indeed been identified. In this context of collecting mode near-field microscopes, a fundamentally different functionality between dielectric and gold-coated tips has been clearly identified experimentally by checking against the solutions of Maxwell equations. It turns out that dielectric tips detect a signal proportional to the optical electric field intensity, whereas gold-coated tips detect a signal proportional to the optical magnetic field intensity. The possible implications of this surprising phenomenon are discussed.     

The tuning fork as sensor for dynamic force distance control in scanning near-field optical microscopy

The dynamic force distance control for scanning near-field optical microscopy on the basis of a tuning fork as piezoelectric force sensor is remarkably sensitive. In order to gain a better understanding of this sensitivity the vibrational properties of the tuning fork are modelled within the framework of two coupled harmonic oscillators. As a result, the effective force constant of the tuning fork at resonance frequency is determined. Furthermore, the influence of the additional mass by the attachment of the near-field probe is investigated.     

The tuning fork as sensor for dynamic force distance control in scanning near-field optical microscopy

The dynamic force distance control for scanning near-field optical microscopy on the basis of a tuning fork as piezoelectric force sensor is remarkably sensitive. In order to gain a better understanding of this sensitivity the vibrational properties of the tuning fork are modelled within the framework of two coupled harmonic oscillators. As a result, the effective force constant of the tuning fork at resonance frequency is determined. Furthermore, the influence of the additional mass by the attachment of the near-field probe is investigated.     

Comparative imaging of a bacterial surface-located GFP fusion protein by epifluorescence and scanning near-field optical microscopy

IcsA is an autotransporter protein that plays a role in the virulence of Shigella bacteria. We have examined the cellular localization of a fusion of an IcsA fragment to the green fluorescent protein (GFP) expressed in Escherichia coli using a dual epifluorescence and scanning near-field optical microscope. By combining the data obtained from far-field with near-field microscopy of the same sample, discrimination between surface-bound fusion proteins and fusion proteins located in the cellular cytoplasm becomes possible. Furthermore, and for the first time, the inherent advantages in resolution of the near-field images provides highly specific details of the location of a GFP fusion protein on a bacterial cell surface.     

Near-field mapping of surface polariton fields

Using the general approach to image formation in collection near-field optical microscopy, I derive the symmetry relations for the amplitude coupling coefficients in the case of a weakly guiding single-mode fibre terminated with a probe tip possessing axial symmetry. It is shown that, for the symmetrical detection configuration, six elements of the coupling matrix can be expressed by using only three independent coupling coefficients. The obtained relations are further applied to describe near-field mapping of surface plasmon polariton (SPP) fields. I demonstrate that, for the symmetrical detection configuration, the near-field optical image reflects the intensity distribution of the SPP field components parallel to the surface plane, even though the strong perpendicular component is also being detected. This conclusion is supported with numerical simulations that elucidate the influence of symmetry of the fibre probe on the resulting near-field optical image. The near-field optical images simulated for scattering systems typical for SPP microoptics and localization are presented. It is found that the presence of asymmetry in the detection configuration increases the contribution of the perpendicular field component and results in the images approaching the corresponding SPP intensity distributions.