基于CC1100的无线视频监控系统设计

为了对特定场合进行安全监控,采用CC1100无线传输模块和PTC08串口摄像头模块设计并实现了一种无线视频监控系统。利用摄像头模块对视频进行数据采集、压缩、串口传输,并利用微控制器通过无线传输模块进行拍摄控制、数据传输。经测试表明,该系统具有操作简便、运行稳定的特点,达到了设计要求。     

基于GSM短消息模式的生理参数远程传输

随着移动通讯技术的发展,GSM短消息技术已运用在许多监控系统中.本文基于西门子公司的TC35i模块,采用GSM短消息的方式,对测量到的人体生理参数进行远程的传输.根据TC35i模块的工作方式,设计出接口电路,利用串口对GSM模块进行控制,利用AT指令完成对GSM模块的软件编程,实现短消息无线传输的功能.     

基于STM32的以太网网络视频监控系统

基于STM32F407芯片、LAN8720A模块以及OV2640摄像头模块,设计了一种以太网网络视频监控系统。该视频监控系统使用UCOS-Ⅱ系统,以及Lw IP协议栈,利用OV2640摄像头模块采集数据。在UCOS-Ⅱ系统的调度下,使用Lw IP协议栈,利用TCP/IP协议,将采集到的数据上传到PC客户端,PC端能够实时地监控。相比Zig Bee传输技术而言,利用网络传输可大幅度提高数据传输的带宽,可以实现监控视频的实时传输以及高清画面的传输。     

基于S3C2440的实时捕捉监控系统设计

设计了一款基于S3C2440芯片的最小化实时捕捉监控系统。该系统选择红外传感器、CMOS图像传感器OV9650、TQ043TSCM-V型LCD、SANDISK的SDHC,分别作为检测模块、图像采集模块、实时显示模块和储存模块。为使监控系统具有良好的实时性以及小巧的程序代码,采用裸机编程。经实际验证,系统对物体捕捉敏感,图像显示连续清晰,体现了良好的稳定性,具有较好的应用价值。     

基于TD-SCDMA的ARM9无线视频监控系统设计

本文设计了一个基于TQ2440开发板的无线视频监控系统,前端视频采集编码系统以嵌入式Linux操作系统为平台,运用MPEG-4编解码;传输系统采用中国移动的TD-SCDMA无线网络,无线传输模块采用重邮信科公司的基于TD-SCDMA的TD230A;后端监控系统采用客户机/服务器模式,监控软件采用Socket编程。本文阐述了整个系统的软硬件功能与组成,真正实现了视频监控的无线化,满足无线视频监控系统的要求。     

基于S3C2440和RFID技术的智能监控系统

为了实现实时监控,设计了一种以ARM9芯片S3C2440为核心的智能监控系统.Nordic公司的nRF24L01芯片解决主控模块和电子标签的互相通信,实现远距离射频识别,工作于2.45 G.在房间内有东西被移出后,OV9650摄像头能够实时采集房间内的视频信息,并及时显示在群创3.7英寸TFT LCD屏上.实验结果表明,该设计运行稳定,是智能监控的一种有效解决方案.     

基于GSM/GPRS的机车无线传输平台设计

铁路系统中机车运行的安全性至关重要,随着科技的发展,机车运营部门正在逐步建立一套行之有效的运营安全监控体系.文中针对运营安全监控体系中的机务安全监控系统进行设计,运用GSM/GPRS技术构建了机车无线传输平台.文中介绍了机车无线传输平台的系统结构和功能,着重阐述了GSM/GPRS模块的软硬件设计思路,通过平台系统需求分析,给出了GSM/GPRS模块的硬件结构图和软件流程图.     

基于GPRS和嵌入式计算机的远程监控系统研究

本文设计和实现了基于GPRS传输的嵌入式远程监控系统,该监控系统由嵌入式计算机系统,USB摄像头模块和GPRS模块组成.研究了GPRS模块的工作原理以及网络链接,设计了针对该远程监控系统的嵌入式计算机系统,并成功实现了视频数据的采集、传输和接收.该监控系统灵活方便、体积小、功耗低.     

基于FPGA的激光笔辅助教学系统设计与实现

为了实现激光笔与大屏幕的互动,基于常用的OV9650摄像头模块和315MHz无线收发模块,采用了一种FPGA架构实现激光笔与大屏幕互动的设计方案。OV9650摄像头模块的采集信号由FPGA进行缓存和处理,由它计算出激光点的坐标,之后计算机接收激光点的坐标及激光笔发出的无线控制信号,通过授课主机端的软件实现激光笔与大屏幕的互动。目前该系统已应用于上海交通大学部分智能教室中,效果明显。     

OV7670及其在3G流媒体服务中的应用

在3G网络视频监控迅速崛起的时代背景下,介绍一种CMOS图像传感器OV7670。从其基本结构、编程功能及数字图像的输出方面做了具体研究,最后给出一种OV7670在3G流媒体（视频流）服务中的应用方案,对3G无线视频传输系统设计具有指导意义。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.