硅基槽型微环谐振器及其调谐特性研究

仿真和实验研究了含槽型(slot)光波导的反馈波导型微环谐振器的特性,将槽型光波导集成到Si基微环谐振器中,丰富Si基光波导的功能,为新型光电子器件的实现提供途径。通过锥形波导结构实现从传统波导到槽型波导的模式转换,减小传输损耗,采用时域有限差分法(FDTD)研究了光功率的分布和模式转换过程。结果显示,光功率逐渐转移到锥形结构两侧的槽型波导中并最终形成槽型波导中的传输模式,通过优化锥形结构能实现较高的模式转换效率,可以达到90%以上。采用电子束刻写技术和等离子刻蚀技术制备了反馈波导型槽型微环谐振器。实验显示,锥形波导能够实现模式的转换,光传输过程良好。通过在槽型波导中填充电光聚合物来改变槽型光波导的折射率,测量结果显示,传输谱谐振峰发生了明显移动,移动幅度达到5.6nm,器件具备很好的可调谐性。     

用于传感的聚合物微谐振环的研制

对一种用于传感的聚合物微谐振环进行了研制.器件为多模耦合器结构,作为微谐振环的输入/输出耦合结构.微谐振环采用跑道形结构.首先分析了器件的原理,给出了器件的优化设计参数.采用紫外光敏材料SU-8和CYTOP作为波导芯层和下包层材料,制作了上述结构的微谐振环器件,并进行了测试.扫描电镜的结果显示,所制备器件的整体形貌比较清晰,波导结构均匀光滑,侧壁陡直度较高.采用截断法测得单模直波导的传输损耗约为2.2 dBcm.对多模耦合器(MMI)结构和弯曲波导的测试表明,MMI结构在较宽的波长范围内实现了接近50:50的功分比,且损耗较低,而纯弯曲波导结构的通光性能良好.测量得到的器件谐振输出光谱表明,器件在主谐振峰处的插入损耗约为38dB,自由光谱区(FSR)约为1.87nm.过数据处理分析得到弯曲波导的传输损耗约为5.2 dB/cm.提出了进一步降低器件损耗、改善器件性能的措施.     

Polymeric variable optical attenuator based on long range surface plasmon polaritons

Proposed is a polymeric variable optical attenuator based on long range surface plasmon polaritons (LRSPPs) along a thin metal stripe embedded in polymers. The device is operated by controlling radiation loss of the LRSPP mode resulting from the temperature gradient of the polymer cladding caused by a heater. For guiding LRSPPs and efficient coupling of singlemode fibres, gold stripes 20 nm thick, 4 /spl mu/m wide and 1 cm long are utilised. To obtain a long physical lifetime, the heater is formed on the top of the polymer cladding with a 200 nm Au film which is about ten times thicker than the thin metal waveguide. The fabricated device is characterised at a wavelength of 1.55 /spl mu/m, exhibiting high attenuation of less than 30 dB with an operating power of 100 mW. A fibre-to-fibre total insertion loss of 6.1 dB is achieved when using singlemode fibres.     

利用有机-无机溶胶-凝胶方法制备平面波导环形谐振腔

采用简单的有机-无机混合的溶胶-凝胶方法制备了折射率在一定范围内可调的波导材料,并利用其制备了平面波导环形谐振腔器件。波导结构呈现倒脊形,其制备工艺首先是利用感应耦合等离子体刻蚀技术(ICP)在二氧化硅衬底上刻蚀波导结构的凹槽,然后再沉积波导薄膜。利用光谱仪对器件的传输特性进行了测量,观测到具有10 dB对比度,自由光谱范围0.182 nm周期性谐振现象,结合环形谐振腔的传输特性,得到环形腔具有较低的传输损耗1.7 dB/cm。同时对环形谐振腔的温度特性进行了测量,得出波导材料的热光系数为-1.54×10-4/℃。     

单直波导光学环腔器件的Q值研究

为实现高品质因数Q值的光学环腔器件,采用耦合模理论,仿真得出单直波导光学环腔器件的Q值与自耦合系数的关系曲线.以Si3N4为材料,采用与CMOS工艺相兼容的技术制备了波导宽度为2μm,半径为200μm的Si3N4单直波导光学环腔器件.在相同的制备工艺下,同一芯片中不同光学环腔的传输系数相同,通过设计器件中环腔与直波导的...     

New integrated optical ring resonator in glass

A new integrated optical ring resonator using a four-port nonsymmetric Mach-Zehnder interferometer as an input/output coupler is demonstrated. The device is fabricated in a glass substrate by the double-ion-exchange process. A finesse of 5 at lambda =1.523 mu m is measured. Propagation losses of 0.17 dB/cm in the ring waveguide are estimated.<>     

聚合物单模光波导的研究

采用一种间接方法，计算出了DCNP／PEK－c主客掺杂聚合物薄膜在1300nm波长下的折射率；在对其平板光波导研究的基础上，进行了新型单模倒脊型聚合物光波导的设计与制做。结果表明，此种新型光波导具有较好的单模性。     

Single-Facet Folded-Cavity Diode Laser With Ultrasmall Bend Radius High-Index-Contrast Oxidized AlGaAs Ridge Waveguide

AlGaAs heterostructure high-index-contrast (HIC) ridge waveguide (RWG) diode lasers incorporating a folded-cavity single-facet resonator with a folding bend radius as small as r=10 mum are demonstrated. Fabricated by a self-aligned deep dry etch (through the active region) plus nonselective O₂-enhanced wet thermal oxidization process, the low-index, insulating, and interface-passivating wet thermal oxide grown directly on the etch-exposed AlGaAs waveguide sidewalls yields a high lateral refractive index contrast of Deltan~1.7 and provides strong optical mode confinement. The HIC RWG device geometry also completely eliminates lateral current spreading, which results in an excellent overlap between the optical field and the gain region of the single InAlGaAs quantum-well graded-index separate confinement heterostructure. A threshold current of I_th=65mA is obtained for the r=10 mum device (a half-racetrack ring resonator), giving a threshold current density of Jth=1503 A/cm², 3.34 times higher than that of same-length straight lasers. At a bend radius of r=150 mum, I_th=16.6 mA, and J_th is comparable to straight cavity values, indicating that at this curvature there is negligible bending and scattering loss for the lowest-order waveguide mode     

Large dispersion in photonic crystal waveguide resonator

Group delay and chromatic dispersion of a Fabry-Perot resonator embedded in a photonic crystal waveguide have been directly measured at 1.55 /spl mu/m wavelength using the phase-shift technique. The photonic crystal waveguide resonator was fabricated in an InGaAsP/InP heterostructure and was designed to show a channel spacing of 100 GHz. Group velocity dispersion up to 250 ps/nm was observed.     

可调谐氮化硅波导微环谐振腔滤波器研究

设计并制备了一种基于热光效应的集成可调谐氮化 硅(Si₃N₄)波导微环谐振腔滤波器,通过采用马赫-曾德干涉仪(MZI)构成的可调谐 耦合器控制耦合区耦合比,以实现滤波器消光比的调谐。设计并优化了微环谐振 腔的波导截面尺寸、弯曲半径和耦合区波导间隔等参数,并通过光刻、反应离子刻蚀(RIE )等工艺制备 了两种不同弯曲半径的Si₃N₄波导微环谐振腔。实验结果表明,本文器件在波长1550nm附近处的自由光谱 范围(FSR)为68pm,3dB带宽约为16pm,品质因子Q达到了9.68×10 4,消光比可调范围约为17dB。     

基于狭缝波导的聚合物基微环折射率传感器研究

基于狭缝波导结构,设计了工作波长在890 nm的聚合物基微环。从折射率传感的角度详细分析了狭缝波导的模场特性。分析了波导高度、宽度及狭缝宽度对灵敏度的影响。传统的狭缝波导具有较高的弯曲损耗,这会影响微环谐振器的品质因子Q以及消光比。设计了非对称的狭缝结构,保证波导模式位于波导中央传输,降低弯曲损耗。为了条形波导与狭缝波导更好的耦合,设计了基于多模干涉结构的条形-狭缝波导模式转换器。仿真表明设计的微环谐振器的传感灵敏度达到109 nm/RIU。     

光漂白法制备聚合物X连接型非线性光波导

研究了用光漂白方法制备ＰＭＭＡ／ＤＲ１聚合物Ｘ连接型非线性波导。将波长为１０６４ｎｍ的ＹＡＧ脉冲激光通过光纤耦合到波导中,研究了波导两口光波模式转换情况,并观察到了光信号的自开关效应,材料的非线性折射率和双光子吸收影响了自开关强度的大小。     

A Taper-Fused Microspherical Laser Source

We report on the realization of an integrated lasing device consisting of a microsphere optical resonator fused to a tapered optical fiber. A microsphere fabricated from Er: Yb-codoped phosphate glass is heated above its glass transition temperature of 375degC by pumping it at 977 nm with 70 mW via a tapered optical fiber. The onset of thermal stress in the glass at a maximum pumping power results in the sphere melting and fusing to the taper coupler, without inhibition of whispering gallery mode lasing. A taper-fused microsphere laser with ~4.5 muW of lasing power at 1593 nm is demonstrated.     

Silicon-based Fano resonance devices based on photonic crystal nanobeams

To address the driving power and density of wavelength-division-multiplexing (WDM) computing architectures, a Fano resonator based on a photonic crystal nanobeam is proposed. The Fano resonator comprises a T-shaped waveguide, introducing an additional phase shift in the continuous propagation mode, and a photonic crystal nanobeam with a discrete mode. The device has one resonance peak within wavelength ranging from 1 500 nm to 1 600 nm, with a maximum extinction ratio of 8.7 dB and a transmission spectrum slope of up to 11.30 dB/nm. The device has good reusability, extinction ratio, and spectral resolution. It is expected to provide essential photonic components for low-energy consumption and high-density photonic computing to meet the requirements of future convolutional neural network (CNN) acceleration computing.     

1.3μm波段单横模大功率输出量子点激光器

为了制备大功率、单横模输出的量子点激光器,对有源多模干涉波导结构进行了研究。通过优化器件结构设计,采用1×1型有源多模干涉波导结构,以均匀多层InAs/InGaAs/GaAs量子点材料作为有源区,制备了1.3μm波段的有源多模干涉结构量子点激光器。连续电流注入条件下的测试结果表明,与传统的均匀波导结构器件相比,有源多模干涉结构器件具有更低的串联电阻和更好的散热性能;在连续电流为0.5A的小注入情况下,器件的输出功率可达114mW、中心波长为1332nm。结果表明,有源多模干涉结构器件是制备大功率、单横模输出光发射器件的一种有效的器件结构。     

Diode laser wavelength tracking using an integrated dual slabwaveguide interferometer

The problem of tracking small changes in the output wavelength of laser diodes is addressed using a dual slab waveguide interferometer fabricated from silicon oxynitride. Waveguide mode dispersion differences between the waveguide modes provide a mechanism for identifying input wavelength shifts that are measured as shifts in the output far-field diffraction image. At visible wavelengths the device can transduce input wavelength changes into phase responses with a sensitivity of +0.9 rad/nm. The lower threshold limit of detection for laser output frequency shifts, is 2.2 GHz or 6 pm at a center wavelength of 635 nm. The TE and TM sensitivities to wavelength are approximately equivalent in the device described     

基于宽度调制谐振腔的光子晶体电光调制器

针对目前电光调制器插入损耗高的问题,提出了一种基于宽度调制(WM)型谐振腔的光子晶体电光调制器.该器件由输入端纳米线波导、硅基光子晶体波导和WM型谐振腔组成,前二者的连接处采用锥形结构,用于减少2种波导之间的级联损耗.根据时域耦合模理论与等离子体色散效应,采用WM型谐振腔和PN掺杂结构实现对横电(TE)模的调制,并应用...     

基于波状PN结的低驱动电压电光调制器

本文研究了一种基于波状PN结的低驱动电压电光调制器,该器件在光通信系统中可以获得较高的传输效率和较低的传输损耗。器件主要由光子晶体线缺陷波导和谐振腔组成。在光子晶体平板上下侧分别添加反向偏置电压,同时在波导中心区域引入谐振腔,通过在谐振腔区域添加不同浓度的掺杂,从而在线缺陷波导处形成波状PN结。根据等离子色散效应,在光子晶体两边施加反向偏置电压时会引起掺杂区硅基平板折射率的变化,从而导致光的透射率发生改变,以此达到调制的目的。采用时域有限差分法(FDTD)分析其时域稳态场强分布、模场分布和波状PN结参数对驱动电压的影响,结果表明:在驱动电压为1.04 V时,该器件可以实现中心波长为1 584.5 nm的TE模窄带宽通、断调制,且器件的消光比高达30.8 dB,插入损耗仅有0.5 dB,Q值高达1.4×10^4。     

Fabrication of optical inverted-rib waveguides using UV-imprinting

In this paper we introduce a fabrication process for polymer rib waveguides that uses UV-imprint lithography. In the structure of an inverted-rib waveguide, the lower cladding of the waveguide is patterned by UV-imprinting and the waveguiding layer is subsequently spin-coated. That makes the thickness of the formed slab layer on the rib waveguide controllable by tuning the spin-coating parameters. The fabrication process utilizes two steps of UV-imprinting. The first one is to form a rigid polymer mold from positive tone photoresist. The second one is to pattern the waveguide lower cladding with the formed polymer mold. Through the two steps of UV-imprinting, rib waveguides can be fabricated without an etching procedure. We demonstrated the proposed fabrication process by fabricating 2-μm-wide waveguides operating in single mode at 1310 nm. With TE-polarized light, the fabricated waveguides show an average transmission of 58.6% in a 30 mm long waveguide, corresponding to a loss of 2.3 dB.     

Asymmetric waveguide devices with buried AlO/sub x/ cladding layers

We demonstrate a highly asymmetric waveguide filter for wavelength division multiplexing applications using wet oxidation of AlAs to form low-index cladding layers. The dual waveguide structure consists of a low-index polymer waveguide coupled to a lossy high-index AlGaAs waveguide. The high asymmetry between the polymer and AlGaAs yields high resolution at small device lengths. The light is coupled in and out of the polymer guide and exhibits Fabry-Perot-like resonances as the light couples to different modes of the AlGaAs. With a device length of 400 /spl mu/m, we observe resonances with a width of about 1 nm at 800 nm, agreeing with theoretical expectations. In addition to the simple filter demonstrated here, such a structure could be used to form active light emitting or detector devices.