（Pb,La）TiO3薄膜的显微结构和电学性能

采用溶胶－凝胶工艺旋涂法成功地在ＭｇＯ，ＳｒＴｉＯ，Ｓｉ单晶片，石英玻璃和镀Ｐｔ硅片衬底材料上制得了高取向或多晶具有钙钛矿结构的Ｐｂ１－ｘＬａｘＴｉ１－Ｘ／４Ｏ３（ＰＬＴ）铁电薄膜。讨论了Ｔｉ－ＯＩ，ＯⅠ－Ｔｉ－ＯⅡ和Ｐｂ（Ｌａ）－（ＴｉＯ）伸缩和弯曲振动铁电软模的红外吸收谱。实验表明：衬底材料对薄膜的显微结构有很大影响。     

工艺参数对形成（Pb,La）TiO3溶胶和凝胶的影响

系统地研究了溶胶－凝胶技术制备Ｐｂ（１－ｘ）ＬａｘＴｉ（１－ｘ／４）Ｏ３的铁电陶瓷膜时催化剂、溶液浓度在室温下对形成溶胶和凝胶的影响规律；用约外光谱研究了成胶机理；用该技术成功地在（１００）Ｓｉ单晶衬底上制备出了均匀、无裂纹且具有钙铁矿结构的ＰＬＴ晶态薄膜。     

红外探测器PT薄膜的实验研究

对用于红外探测器和光声电子器件的ＰＴ薄膜的制备工艺及热处理过程进行了实验研究，对多离子束反应共溅射法制备薄膜，作了相应的ｘ衍射、ＸＰＳ能谱及ＥＰＭＡ分析。通过实验，成功地除去了薄膜中ＰｂＯ和焦绿石杂质，并改善了ＰｂＴｉＯ３（００１）的择优取向程度，从而为制备衬底温度的优这提供了依据。     

在LaNiO_3衬底上（Pb,La）TiO_3铁电薄膜的制备和研究

首先通过金属有机化合物热分解（MOD）法在Si（100）基片上制备出LaNiO3（LNO）薄膜,再通过溶胶-凝胶（sol-gel）法,在LNO/Si（100）衬底上制备出（PbxLa1-x）TiO3（PLT）铁电薄膜。经XRD分析表明,LNO薄膜具有（100）择优取向的类钙钛矿结构,PLT/LNO/Si薄膜具有四方相钙钛矿结构,同时以（100）择优取向。最后对薄膜的介电性和铁电性进行了测试,发现薄膜介电常数适中,铁电性良好。     

Sol-Gel法制备择优取向铁电陶瓷薄膜的研究进展

综述了溶胶—凝胶法制备择优取向铁电陶瓷薄膜的研究现状,主要介绍了制备过程中衬底材料、热处理工艺、前驱体以及掺杂等因素对铁电陶瓷薄膜择优取向的影响以及铁电陶瓷薄膜的择优取向与铁电性能的关系。     

Sol-Gel法制备择优取向铁电陶瓷薄膜的研究进展

综述了溶胶—凝胶法制备择优取向铁电陶瓷薄膜的研究现状,主要介绍了制备过程中衬底材料、热处理工艺、前驱体以及掺杂等因素对铁电陶瓷薄膜择优取向的影响以及铁电陶瓷薄膜的择优取向与铁电性能的关系。     

ZrO_2—Y_2O_3复合Sol（溶胶）的制备

用无机金属盐水解及有机醇盐中间体合成制备Ｓｏｌ（溶胶）的方法，包括制备ＺｒＯ２—Ｙ２Ｏ３Ｓｏｌ、Ｓｏｌ的纯化、Ｓｏｌ—Ｇｅｌ转变，表征了Ｓｏｌ的各项物理化学特性，对两种方法制备的Ｓｏｌ进行了比较，结果表明，所制备的Ｓｏｌ都呈非聚集态，颗粒细小（＜１０ｎｍ），有非晶特征，１０００℃×１００ｈ的静态氧化试验证明，用有机醇盐制备的复合（ＺｒＯ２─Ｙ２Ｏ３）Ｓｏｌ涂覆在ＭＣｒＡｌＸ／ＧＨ２２０高温合金上显示了良好的抗氧化性能。     

硅基3C-SiC薄膜的外延生长技术

用常压化学气相淀积法在（１００）Ｓｉ衬底上异质外延生长了３Ｃ－ＳｉＣ薄膜。为减小３Ｃ－ＳｉＣ与硅之间的晶格失配,在化学气相淀积系统中通过对硅衬底表面碳化制备了缓冲层,确定了形成缓支的最佳条件。测量结果表明,１３００℃下在Ｓｉ℃衬底缓冲层上可以获得３Ｃ－ＳｉＣ单晶。     

在LaNiO3衬底上（Pb,La）TiO3铁电薄膜的制备和研究

首先通过金属有机化合物热分解(MOD)法在Si(100)基片上制备出LaNiO3(LNO)薄膜,再通过溶胶-凝胶(sol-gel)法,在LNO/Si(100)衬底上制备出(PbxLa1-x)TiO3(PLT)铁电薄膜。经XRD分析表明,LNO薄膜具有(100)择优取向的类钙钛矿结构,PLT/LNO/Si薄膜具有四方相钙钛矿结构,同时以(100)择优取向。最后对薄膜的介电性和铁电性进行了测试,发现薄膜介电常数适中,铁电性良好。     

硫酸氧钛－水－乙二醇系溶胶浸涂制备TiO_2薄膜

用ＴｉＯＳＯ４·ｎＨ２Ｏ为原料，制成ＴｉＯＳＯ４－Ｈ２Ｏ－乙二醇系溶胶，然后浸涂制备ＴｉＯ２薄膜．研究了此ＴｉＯ２薄膜的形成过程、晶相组成和微观结构．６００℃热处理得到的ＴｉＯ２薄膜为锐钛矿相，底层小颗粒与玻璃基板具有良好的附着．     

Preparation and properties of SrBi_(2.2) Ta_2O_9 thin film

1INTRODUCTION Ferroelectricfilmshaveattractedmuchatten tionduetotheirpotentialapplicationsinelectronic devices,suchaspyroelectricinfrareddetectors,opticalswitches,actuators,dynamicrandomac cessmemories(DRAMS)[1,2],andnon volatile randomaccessmemories(NVRAMS)[3,4].Re cently,thereisinterestinthestudyofbismuthlayerstructuredferroelectricmaterialsformemory applications.Inparticular,strontiumbismuthtan tanate(SBT),oneofthebismuthlayerstructuredcompounds,isapromisingcandidateforferroelec t…     

Effect of La Doping on Microstructure and Ferroelectric Properties of Bi4Ti3O12 Thin Films Prepared by Sol-gel Method

The Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin films were prepared on the Pt/Ti/SiO2/Si substrate using the sol-gel method. The effect of La doping on the microstructure and ferroelectric properties of Bi4Ti3O12 films were investigated. Both the Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin films exhibited typical bismuth layered perovskite structure. The 2Pr (remanent polarization) value of Bi3.25La0.75Ti3O12 thin films is 18.6 Μc/cm2, which is much larger than that of Bi4Ti3O12 thin films. And the Bi3.25La0.75Ti3O12 films show fatigue-free behavior, while the Bi4Ti3O12 thin films exhibit the fatigue problem. The mechanism of improvement of La doping was discussed.     

快速退火Sol—Gel PZT铁电薄膜的性能研究

报道了以乙酸铅、乙酸氧锆和钛酸正丁酯为原料，用溶胶-凝胶（Sol-Gel）法，经多次旋转涂膜，在Pt／Ti／SiO2／Si衬底上制备了PZT凝胶薄膜。用快速退火（RTA）作薄膜的热解和结晶热处理，制备了以（100）取向为主的PZT薄膜。用X射线衍射（XRD）和RT66A测试了膜的结晶取向、漏电流、电滞回线和抗疲劳性能等。结果表明，经RTA处理的溶胶凝胶法PZT膜具有良好的性能。     

组合法制备Pb（ZrxTi（1-x））O3组分梯度薄膜

在无蒸馏和无惰性气氛保护的条件下,快速制备了用于组合合成Pb(ZrxTi1-x)O3薄膜的前驱溶液PT和PZ。采用组合法在Pt/Ti/SiO2/Si衬底上制备了一系列Pb(ZrxTi1-x)O3组分梯度薄膜。经XRD分析表明,薄膜具有钙钛矿结构,择优取向为(111)。SEM结果显示薄膜厚度在500nm左右。电滞回线的测试表明,下梯度薄膜PZT-654表现出良好的铁电性能,明显优于其它薄膜。PZT-654梯度薄膜的剩余极化强度Pr为38.4μC/cm2,矫顽场Ec为75.0kV/cm,有较大的极化偏移,Poffset为12.9μC/cm2,表现出梯度铁电薄膜的特性。     

Influence of annealing time on the microstructure and properties of Pb(Zr0.53Ti0.47)O3 thin films

The PZT thin films were prepared on (111)- Pt/Ti/SiO2/Si substrates by sol-gel method, and lead acetate [Pb(CH3COO)2], zirconium nitrate [Zr(NO3)4] were used as raw materials. The X-ray diffractometer (XRD) and scanning electron microscopy (SEM) were used to characterize the phase structure and surface morphology of the films annealed at 650 ℃ but with different holding time. Ferroelectric and dielectric properties of the films were measured by the ferroelectric tester and the precision impedance analyzer, respectively. The PZT thin films were constructed with epoxy resin as a composite structure, and the damping properties of the composite were tested by dynamic mechanical analyzer (DMA). The results show that the films annealed for 90 minutes present a dense and compact crystal arrangement on the surface; moreover, the films also achieve their best electric quality. At the same time, the largest damping loss factor of the composite constructed with the 90 mins-annealed film shows peak value of 0.9, higher than the pure epoxy resin.     

衬底效应对LiTaO3薄膜制备的影响

用溶胶凝胶法在N型硅、P型硅、石英、铂、镍衬底上制备了钽酸锂(LiTaO3)薄膜,用XRD和SEM对钽酸锂薄膜性能参数进行了表征;发现掺杂少量环氧树脂能提高钽酸锂薄膜的均匀性,改善薄膜与衬底的粘附性;研究了衬底效应与薄膜厚度的关系,薄膜厚度超过0.2 μm,Ni衬底的XRD峰值强度几乎不再出现,说明衬底对薄膜初始结晶取向有重要影响;利用不同衬底上生长钽酸锂薄膜,XRD研究结果表明:N型硅、P型硅、石英衬底上只能制备多晶钽酸锂薄膜,铂衬底上制备的钽酸锂薄膜在(012)晶向有强大的择优取向性,镍衬底上制备的钽酸锂薄膜有更好的C轴择优取向性,C轴择优取向系数可达0.082。     

Oriented Growth of PZT thick film embedded with PZT nanoparticles

This paper reports that dense and crack-free(100)oriented lead zirconate titanate(Pb(Zr0.52Ti0.48)O3,PZT)thick film embedded with PZT nanoparticles has been successfully fabricated on Pt/Cr/SiO2/Si substrate by using PT transition layer and PVP additive.The thick film possesses single-phase perovskite structure and perfectly(100)oriented.The(100)orientation degree of the PZT films strongly depended on annealing time and for the 4 μm-thick PZT film which was annealed at 700 ℃ for 5 min is the largest.The(100)orientation degree of the PZT thick film gradually strengthen along with the thickness of film decreasing.The 3 μm-thick PZT thick film which was annealed at 700 ℃ for 5 min has the strongest(100)orientation degree,which is 82.3%.     

Ferroelectric properties of Bi_(3.25)La_(0.75)Ti_(3)O_(12) thin films prepared by sol-gel method

The Bi3.25La0.75Ti3O12 thin films were fabricated on the Pt/Ti/SiO2/Si substrates using sol-gel method. The structure and morphology of the films were characterized us-ing X-ray diffraction and atomic force microscopy. The thin films showed a perov- skite phase and dense microstructure. The 2Pr and 2Vc of the Bi3.25La0.75Ti3O12 thin films annealed at 700℃ were 18.6 μC/cm2 and 4.1 V, respectively, under an applied voltage 10 V. After the switching of 1×1010 cycles, the Pr value decreased to 90% of its pre-fatigue values. The films showed good insulating behavior according to the test of leakage current. The dielectric constant and the dissipation factor of the Bi3.25La0.75Ti3O12 thin films were about 176 and 0.046 at 1 kHz, respectively.     

钛酸锶钡(BST)薄膜SOL-GEL制备方法研究

利用碳酸盐代替部分醇盐，探讨了采用Sol-Gel技术制备Ba1-xSrxTiO3(BST)铁电薄膜的可行性。以醋酸钡[Ba(CH3COO)2]、碳酸锶[SrCO3]和钛酸四丁酯[Ti(OC4H9)4]作原料，运用一般的Sol-Gel工艺制备BST铁电薄膜，通过XRD分析物质结构，用SEM测定表面形貌，XPS及EDAX测定薄膜的组成。结果表明：采用碳酸锶原料和其他醇盐一起来制备BST铁电薄膜的方法是可行的。