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1.
A comprehensive analysis of tunable transconductor topologies based on passive resistors is presented. Based on this analysis, a new CMOS transconductor is designed, which features high linearity, simplicity, and robustness against geometric and parametric mismatches. A novel tuning technique using just a MOS transistor in the triode region allows the adjustment of the transconductance in a wide range without affecting the voltage-to-current conversion core. Measurement results of the transconductor fabricated in a 0.5- mum CMOS technology confirm the high linearity predicted. As an application, a third-order Gm-C tunable low-pass filter fabricated in the same technology is presented. The measured third-order intermodulation distortion of the filter for a single 5-V supply and a 2-Vpp two-tone input signal centered at 10 MHz is -78 dB.  相似文献   

2.
A CMOS transconductor for multimode channel selection filter is presented. The transconductor includes a voltage-to-current converter and a current multiplier. Voltage-to-current conversion employs linear region MOS transistors, and the conversion features high linearity over a wide input swing range. The current multiplier which operates in the weak inversion region provides a wide transconductance tuning range without degrading the linearity. A third-order Butterworth low-pass filter implemented with the transconductors was designed by TSMC 0.18 mum CMOS process. The measurement results show that the filter can operate with the cutoff frequency of 135 kHz to 2.2 MHz. The tuning range and the linearity performance would be suitable for the wireless specifications of GSM, Bluetooth, cdma2000, and wide-band CDMA. In the design, the maximum power consumption at the highest cutoff frequency is 2 mW under a 1-V supply voltage.  相似文献   

3.
A low power (9 mW) highly-digitized 2.4 GHz receiver for sensor network applications (IEEE 802.15.4 LR-WPAN) is realized by a 0.18 $mu{rm m}$ CMOS process. We adopted a novel receiver architecture adding an intermediate frequency (IF) level detection scheme to a low-power complex fifth-order continuous-time (CT) bandpass $SigmaDelta$ modulator in order to digitalize the receiver. By the continuous-time bandpass architecture, the proposed $SigmaDelta$ modulator requires no additional anti-aliasing filter in front of the modulator. Using the IF detector, the achieved dynamic range (DR) of the overall system is 95 dB at a sampling rate of 64 MHz. This modulator has a bandwidth of 2 MHz centered at 2 MHz. The power consumption of this receiver is 9.0 mW with a 1.8 V power supply.   相似文献   

4.
The ADC shown in this paper uses an innovative sigma-delta (SigmaDelta) architecture that replaces the flash quantizer and mismatch corrected DAC of a multibit continuous time (CT) modulator by a time domain encoder similar to a PWM modulator to reduce the effective ADC area. The modulator achieves the resolution of a multibit design using single bit circuitry by concentrating most of the quantization error energy around a single frequency, which is afterwards removed, seizing the zeros of a sinc decimation filter. The non flat error spectrum is accomplished by use of two filter loops, one of which is made to operate in a self-oscillating mode. An experimental CT-SigmaDelta ADC prototype has been fabricated in 0.13 mum CMOS which implements a third order modulator with two operating modes. Measurements show an effective number of bits (ENOB) of 10 bits and 12 bits in a signal bandwidth of 17 MHz and 6.4 MHz, respectively, and a power-efficient figure of merit (FoM = Pwr/2 middot BW middot 2ENOB) of 0.48 pJ/conversion at 1.5 V supply. The active area of the ADC is 0.105 mm2.  相似文献   

5.
This paper presents the design of a new Wienbridge topology. Its phase noise performance, low temperature dependency and low power consumption make it suitable for use in wireless sensor nodes and time-based sensor readout circuitry. The noise as well as temperature behavior of the oscillator is explained using extensive calculations. Measurements on 7 samples of the same batch show a temperature stability of 86 $hbox{ppm}/^{circ}hbox{C}$ and a measured spread of 0.9% at an oscillation frequency of 6 MHz. The circuit consumes 66 $muhbox{W}$ and is realized in a 65 nm technology measuring 150 $muhbox{m}$ by 200 $muhbox{m}$. The measured phase noise figure of merit is 172 dB at a frequency offset of 100 kHz.   相似文献   

6.
This paper presents a 100-kHz fifth-order Chebychev low-pass filter (LPF) using the proposed dynamic biasing (DB) technique which enables wide dynamic range under a low-supply voltage. The change of state variables in the internal nodes of the filter can be corrected by using a novel simplified scheme, avoiding the output transient owing to dynamic biasing. The filter, including an automatic frequency tuning system based on the voltage-controlled-filter (VCF) architecture and voltage reference circuit, is fabricated in a 0.18-mum standard CMOS technology with a 0.5-V threshold voltage and consumes 443 muW from a power supply of 0.6 V. The output noise and the in-band IIP3 are 575 pArms and 219 muA, respectively. The filter achieves a dynamic range of 89 dB.  相似文献   

7.
A reconfigurable complex band-pass (CBP)/low-pass (LP) active-RC filter with a noise-shaping technique for wireless receivers is presented. Its bandwidth is reconfigurable among 500 kHz, 1 MHz and 4 MHz in LP mode and 1 MHz, 2 MHz and 8 MHz in CBP mode with 3 MHz center frequency. The Op-Amps used in the filter are realized in cell arrays in order to obtain scalable power consumption among the different operation modes. Furthermore, the filter can be configured into the 1st order, 2nd order or 3rd order mode, thus achieving a flexible filtering property. The noise-shaping technique is introduced to suppress the flicker noise contribution. The filter has been implemented in 180 nm CMOS and consumes less than 3 mA in the 3rd 8 MHz-bandwidth CBP mode. The spot noise at 100 Hz can be reduced by 14.4 dB at most with the introduced noise-shaping technique.  相似文献   

8.
An all-digital RF signal generator using DeltaSigma modulation and targeted at transmitters for mobile communication terminals has been implemented in 90 nm CMOS. Techniques such as redundant logic and non-exact quantization allow operation at up to 4 GHz sample rate, providing a 50 MHz bandwidth at a 1 GHz center frequency. The peak output power into a 100 Omega diff. load is 3.1 dBm with 53.6 dB SNDR. By adjusting the sample rate, carriers from 50 MHz to 1 GHz can be synthesized. RF signals up to 3 GHz can be synthesized when using the first image band. As an example, UMTS standard can be addressed by using a 2.6 GHz clock frequency. The measured ACPR is then 44 dB for a 5 MHz WCDMA channel at 1.95 GHz with output power of -16 dBm and 3.4% EVM. At 4 GHz clock frequency the total power consumption is 120 mW (49 mW for DeltaSigma modulator core) on a 1 V supply voltage, total die area is 3.2 mm2 (0.15 mm2 for the active area).  相似文献   

9.
In this letter, a multi-gigahertz phase-locked loop (PLL) with a compact low-pass filter is presented. By using a novel dual-path control in the PLL architecture, the capacitance in the loop filter can be effectively reduced for high-level integration while maintaining the required loop bandwidth. Consequently, the noise resulted from off-chip components is therefore eliminated, leading to lower timing jitter at the PLL output waveforms. In addition, the timing jitter is further suppressed due to the use of decomposed phase and frequency detection. Based on the proposed techniques, a 10 GHz PLL is implemented in 0.18 mum CMOS for demonstration. Consuming a dc power of 113 mW from a 1.8 V supply, the fabricated circuit exhibits a locking range from 10.1 to 11 GHz. At an output frequency of 10.3 GHz, the measured peak-to-peak and rms jitter are 3.78 and 0.44 ps, respectively.  相似文献   

10.
A combined linear and delta-modulated (DeltaM) switch-mode PA supply modulator for polar transmitters in wireless handsets is designed in a 0.25 mum CMOS process. The modulator employs a DeltaM switch-mode DC-DC buck converter to enhance the efficiency of a linear regulator at backed-off supply voltages and powers. The delta-modulator's noise-shaping characteristic, linear regulator's power supply rejection, digital pre-emphasis of the input envelope, and a closed-loop amplitude path from the PA output are simultaneously used to achieve state-of-the-art modulator performance. The presented supply modulator follows the input signal's envelope with 20 dB output dynamic range, maximum efficiency of 75.5% at an output power of 30.8 dBm, and 75 dB SFDR for envelope signals up to 4 MHz occupied RF bandwidth. For a 1625 kb/s 8 PSK RF input signal at 900 MHz, polar modulation of a commercial low-power GSM-900 PA provides 10 dB ACPR improvement.  相似文献   

11.
An $L$-band polarization-independent reflective semiconductor optical amplifier (RSOA) is demonstrated for the first time. Optical gain of greater than 21 dB and gain flatness better than 4 dB is achieved over the $L$-band. The polarization-dependent gain estimated using a polarization resolved spectrum is less than 1 dB over the $L$-band. The measured output saturation power is $-$1.0 dBm and the noise figure (NF) is 10 dB for the packaged device. The 3-dB frequency bandwidth for the device is 1.3 GHz making it suitable for 1.25-Gb/s modulated wavelength-division-multiplexed passive optical network networks. Further, the saturation power and the NF of the RSOA were compared with an SOA of identical length.   相似文献   

12.
A 5-GHz dual-path integer-$N$ Type-II phase-locked loop (PLL) uses an LC voltage-controlled oscillator and softly switched varactors in an overlapped digitally controlled integral path to allow a large fine-tuning range of approximately 160 MHz while realizing a low susceptibility to noise and spurs by using a low $K_{rm VCO}$ of 3.2 MHz/V. The reference spur level is less than $-$70 dBc with a 1-MHz reference frequency and a total loop-filter capacitance of 26 pF. The measured phase noise is $-$75 and $-$115 dBc/Hz at 10-kHz and 1-MHz offsets, respectively, using a loop bandwidth of approximately 30 kHz. This 0.25-${hbox{mm}}^{2}$ PLL is fabricated in a 90-nm digital CMOS process and consumes 11 mW from a 1.2-V supply.   相似文献   

13.
A complex analog-to-digital converter (ADC) intended for digital intermediate frequency (IF) receiver applications digitizes analog signals at IFs with excellent power/bandwidth efficiency. However, it is vulnerable to mismatches between its in-phase and quadrature (I/Q) paths that can dramatically degrade its performance. The proposed solution mitigates I/Q mismatch effects using a complex sigma-delta (SigmaDelta) modulator cascaded with 9-bit pipeline converters in each of the I and Q paths. The quantization noise of the first stage complex modulator is eliminated using an adaptive scheme to calibrate finite-impulse response digital filters in the digital noise-cancellation logic block. Although low-pass SigmaDelta cascade ADCs are widely used because of their inherent stability and high-order noise shaping, the complex bandpass cascade architecture introduced herein maintains these advantages and doubles the noise shaping bandwidth. Digital calibration also reduces the effects of analog circuit limitations such as finite operational amplifier gain, which enables high performance and low power consumption with high-speed deep-submicrometer CMOS technology. Behavioral simulations of the complex SigmaDelta/pipeline cascade bandpass ADC using the adaptive digital calibration algorithm predict a signal-to-noise ratio (SNR) of 78 dB over a 20-MHz signal bandwidth at a sampling rate of 160 MHz in the presence of a 1% I/Q mismatch.  相似文献   

14.
This paper introduces a power-efficient, chopper-stabilized switched-capacitor sigma-delta $(SigmaDelta)$ modulator that combines delayed input feedforward and single-comparator tracking multi-bit quantization to achieve high-precision, low-voltage analog-to-digital (A/D) conversion. An experimental prototype of the proposed architecture has been integrated in a 0.18-$mu{hbox {m}}$ CMOS technology. The prototype operates from a 0.7-V supply voltage with a sampling rate of 5 MSamples/sec and consumes only 870$ muhbox{W}$ of total power. The converter achieves a dynamic range of 100 dB, a peak signal-to-noise ratio (SNR) of 100 dB and a peak signal-to-noise and distortion ratio (SNDR) of 95 dB for a 25-kHz signal bandwidth.   相似文献   

15.
A 3.6-GHz digital fractional-N frequency synthesizer achieving low noise and 500-kHz bandwidth is presented. This architecture uses a gated-ring-oscillator time-to-digital converter (TDC) with 6-ps raw resolution and first-order shaping of its quantization noise along with digital quantization noise cancellation to achieve integrated phase noise of less than 300 fs (1 kHz to 40 MHz). The synthesizer includes two 10-bit 50-MHz passive digital-to-analog converters for digital control of the oscillator and an asynchronous frequency divider that avoids divide-value delay variation at its output. Implemented in a 0.13-$mu$m CMOS process, the prototype occupies 0.95-mm$^{2}$ active area and dissipates 39 mW for the core parts with another 8 mW for the oscillator output buffer. Measured phase noise at 3.67 GHz carrier frequency is $-$108 and $-$150 dBc/Hz at 400 kHz and 20 MHz offset, respectively.   相似文献   

16.
A low-power CMOS reconfigurable analog-to-digital converter that can digitize signals over a wide range of bandwidth and resolution with adaptive power consumption is described. The converter achieves the wide operating range by (1) reconfiguring its architecture between pipeline and delta-sigma modes; (2) varying its circuit parameters, such as size of capacitors, length of pipeline, and oversampling ratio, among others; and (3) varying the bias currents of the opamps in proportion to the converter sampling frequency, accomplished through the use of a phase-locked loop (PLL). This converter also incorporates several power-reducing features such as thermal noise limited design, global converter chopping in the pipeline mode, opamp scaling, opamp sharing between consecutive stages in the pipeline mode, an opamp chopping technique in the delta-sigma mode, and other design techniques. The opamp chopping technique achieves faster closed-loop settling time and lower thermal noise than conventional design. At a converter power supply of 3.3 V, the converter achieves a bandwidth range of 0-10 MHz over a resolution range of 6-16 bits, and parameter reconfiguration time of twelve clock cycles. Its PLL lock range is measured at 20 kHz to 40 MHz. In the delta-sigma mode, it achieves a maximum signal-to-noise ratio of 94 dB and second and third harmonic distortions of 102 and 95 dB, respectively, at 10 MHz clock frequency, 9.4 kHz bandwidth, and 17.6 mW power. In the pipeline mode, it achieves a maximum DNL and INL of ±0.55 LSBs and ±0.82 LSBs, respectively, at 11 bits, at a clock frequency of 2.6 MHz and 1 MHz tone with 24.6 mW of power  相似文献   

17.
This paper presents the temperature effect on a Ku-band NMOS common-gate low-noise amplifier (CG-LNA). The temperature characteristics of an NMOS transistor and spiral inductors are obtained over the temperature range from 253 to 393 K. These results show that the optimal bias condition minimizes the transconductance and drain current temperature variations. Based on these results, a current-reused CG-LNA with good temperature performance is designed. At ambient temperatures, the CG-LNA has a measured power gain of 10.3 dB and a noise figure (NF) of 4.3 dB at 15.2 GHz, while consuming 4.5 mA from a 1.3-V power supply. When the temperature varies from 253 to 393 K, the CG-LNA has a power gain variation of 3 dB, NF variation of 2 dB , and dc power consumption variation of 11.9%. This paper is the first to report the temperature effect on Ku-band CG-LNAs.  相似文献   

18.
本文实现了一个采用三位三阶Δ∑调制器的高频谱纯度集成小数频率合成器.该频率合成器采用了模拟调谐和数字调谐组合技术来提高相位噪声性能,优化的电源组合可以避免各个模块之间的相互干扰,并且提高鉴频鉴相器的线性度和提高振荡器的调谐范围.通过采用尾电流源滤波技术和减小振荡器的调谐系数,在片压控振荡器具有很低的相位噪声,而通过采用开关电容阵列,该压控振荡器达到了大约100MHz的调谐范围,该开关电容阵列由在片数字调谐系统进行控制.该频率合成器已经采用0.18μm CMOS工艺实现,仿真结果表明,该频率频率合成器的环路带宽约为14kHz,最大带内相位噪声约为-106dBc/Hz;在偏离载波频率100kHz处的相位噪声小于-120dBc/Hz,具有很高的频谱纯度.该频率合成器还具有很快的反应速度,其锁定时间约为160μs.  相似文献   

19.
We propose the $n$ -dimensional scale invariant feature transform ( $n$-SIFT) method for extracting and matching salient features from scalar images of arbitrary dimensionality, and compare this method's performance to other related features. The proposed features extend the concepts used for 2-D scalar images in the computer vision SIFT technique for extracting and matching distinctive scale invariant features. We apply the features to images of arbitrary dimensionality through the use of hyperspherical coordinates for gradients and multidimensional histograms to create the feature vectors. We analyze the performance of a fully automated multimodal medical image matching technique based on these features, and successfully apply the technique to determine accurate feature point correspondence between pairs of 3-D MRI images and dynamic $3{rm D} + {rm time}$ CT data.   相似文献   

20.
A new phase shifting network for both 180 $^{circ}$ and 90 $^{circ}$ phase shift with small phase errors over an octave bandwidth is presented. The theoretical bandwidth is 67% for the 180$^{circ}$ phase bit and 86% for the 90$^{circ}$ phase bit when phase errors are $pm 2^{circ}$. The proposed topology consists of a bandpass filter (BPF) branch, consisting of a LC resonator and two shunt quarter-wavelength transmission lines (TLs), and a reference TL. A theoretical analysis is provided and scalable parameters are listed for both phase bits. To test the theory, phase shifting networks from 1 GHz to 3 GHz were designed. The measured phase errors of the 180$^{circ}$ and the 90$^{circ}$ phase bit are $pm 3.5^{circ}$ and $pm 2.5^{circ}$ over a bandwidth of 73% and 102% while the return losses are better than 18 dB and 12 dB, respectively.   相似文献   

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