共查询到20条相似文献,搜索用时 843 毫秒
1.
Acosta L. Jimenez M. Carvajal R.G. Lopez-Martin A.J. Ramirez-Angulo J. 《IEEE transactions on circuits and systems. I, Regular papers》2009,56(10):2145-2158
A comprehensive analysis of tunable transconductor topologies based on passive resistors is presented. Based on this analysis, a new CMOS transconductor is designed, which features high linearity, simplicity, and robustness against geometric and parametric mismatches. A novel tuning technique using just a MOS transistor in the triode region allows the adjustment of the transconductance in a wide range without affecting the voltage-to-current conversion core. Measurement results of the transconductor fabricated in a 0.5- mum CMOS technology confirm the high linearity predicted. As an application, a third-order Gm-C tunable low-pass filter fabricated in the same technology is presented. The measured third-order intermodulation distortion of the filter for a single 5-V supply and a 2-Vpp two-tone input signal centered at 10 MHz is -78 dB. 相似文献
2.
Tien-Yu Lo Chung-Chih Hung 《Circuits and Systems II: Express Briefs, IEEE Transactions on》2008,55(4):314-318
A CMOS transconductor for multimode channel selection filter is presented. The transconductor includes a voltage-to-current converter and a current multiplier. Voltage-to-current conversion employs linear region MOS transistors, and the conversion features high linearity over a wide input swing range. The current multiplier which operates in the weak inversion region provides a wide transconductance tuning range without degrading the linearity. A third-order Butterworth low-pass filter implemented with the transconductors was designed by TSMC 0.18 mum CMOS process. The measurement results show that the filter can operate with the cutoff frequency of 135 kHz to 2.2 MHz. The tuning range and the linearity performance would be suitable for the wireless specifications of GSM, Bluetooth, cdma2000, and wide-band CDMA. In the design, the maximum power consumption at the highest cutoff frequency is 2 mW under a 1-V supply voltage. 相似文献
3.
《Microwave and Wireless Components Letters, IEEE》2008,18(12):824-826
4.
Prefasi E. Hernandez L. Paton S. Wiesbauer A. Gaggl R. Pun E. 《Solid-State Circuits, IEEE Journal of》2009,44(10):2745-2754
The ADC shown in this paper uses an innovative sigma-delta (SigmaDelta) architecture that replaces the flash quantizer and mismatch corrected DAC of a multibit continuous time (CT) modulator by a time domain encoder similar to a PWM modulator to reduce the effective ADC area. The modulator achieves the resolution of a multibit design using single bit circuitry by concentrating most of the quantization error energy around a single frequency, which is afterwards removed, seizing the zeros of a sinc decimation filter. The non flat error spectrum is accomplished by use of two filter loops, one of which is made to operate in a self-oscillating mode. An experimental CT-SigmaDelta ADC prototype has been fabricated in 0.13 mum CMOS which implements a third order modulator with two operating modes. Measurements show an effective number of bits (ENOB) of 10 bits and 12 bits in a signal bandwidth of 17 MHz and 6.4 MHz, respectively, and a power-efficient figure of merit (FoM = Pwr/2 middot BW middot 2ENOB) of 0.48 pJ/conversion at 1.5 V supply. The active area of the ADC is 0.105 mm2. 相似文献
5.
《Solid-State Circuits, IEEE Journal of》2009,44(7):1990-2001
6.
This paper presents a 100-kHz fifth-order Chebychev low-pass filter (LPF) using the proposed dynamic biasing (DB) technique which enables wide dynamic range under a low-supply voltage. The change of state variables in the internal nodes of the filter can be corrected by using a novel simplified scheme, avoiding the output transient owing to dynamic biasing. The filter, including an automatic frequency tuning system based on the voltage-controlled-filter (VCF) architecture and voltage reference circuit, is fabricated in a 0.18-mum standard CMOS technology with a 0.5-V threshold voltage and consumes 443 muW from a power supply of 0.6 V. The output noise and the in-band IIP3 are 575 pArms and 219 muA, respectively. The filter achieves a dynamic range of 89 dB. 相似文献
7.
一种用于无线接收机的噪声整形可重构复数带通/低通滤波器的设计 总被引:1,自引:1,他引:0
A reconfigurable complex band-pass (CBP)/low-pass (LP) active-RC filter with a noise-shaping technique for wireless receivers is presented. Its bandwidth is reconfigurable among 500 kHz, 1 MHz and 4 MHz in LP mode and 1 MHz, 2 MHz and 8 MHz in CBP mode with 3 MHz center frequency. The Op-Amps used in the filter are realized in cell arrays in order to obtain scalable power consumption among the different operation modes. Furthermore, the filter can be configured into the 1st order, 2nd order or 3rd order mode, thus achieving a flexible filtering property. The noise-shaping technique is introduced to suppress the flicker noise contribution. The filter has been implemented in 180 nm CMOS and consumes less than 3 mA in the 3rd 8 MHz-bandwidth CBP mode. The spot noise at 100 Hz can be reduced by 14.4 dB at most with the introduced noise-shaping technique. 相似文献
8.
Frappe A. Flament A. Stefanelli B. Kaiser A. Cathelin A. 《Solid-State Circuits, IEEE Journal of》2009,44(10):2722-2732
An all-digital RF signal generator using DeltaSigma modulation and targeted at transmitters for mobile communication terminals has been implemented in 90 nm CMOS. Techniques such as redundant logic and non-exact quantization allow operation at up to 4 GHz sample rate, providing a 50 MHz bandwidth at a 1 GHz center frequency. The peak output power into a 100 Omega diff. load is 3.1 dBm with 53.6 dB SNDR. By adjusting the sample rate, carriers from 50 MHz to 1 GHz can be synthesized. RF signals up to 3 GHz can be synthesized when using the first image band. As an example, UMTS standard can be addressed by using a 2.6 GHz clock frequency. The measured ACPR is then 44 dB for a 5 MHz WCDMA channel at 1.95 GHz with output power of -16 dBm and 3.4% EVM. At 4 GHz clock frequency the total power consumption is 120 mW (49 mW for DeltaSigma modulator core) on a 1 V supply voltage, total die area is 3.2 mm2 (0.15 mm2 for the active area). 相似文献
9.
Sin-Jhih Li Hsieh-Hung Hsieh Liang-Hung Lu 《Microwave and Wireless Components Letters, IEEE》2009,19(10):659-661
In this letter, a multi-gigahertz phase-locked loop (PLL) with a compact low-pass filter is presented. By using a novel dual-path control in the PLL architecture, the capacitance in the loop filter can be effectively reduced for high-level integration while maintaining the required loop bandwidth. Consequently, the noise resulted from off-chip components is therefore eliminated, leading to lower timing jitter at the PLL output waveforms. In addition, the timing jitter is further suppressed due to the use of decomposed phase and frequency detection. Based on the proposed techniques, a 10 GHz PLL is implemented in 0.18 mum CMOS for demonstration. Consuming a dc power of 113 mW from a 1.8 V supply, the fabricated circuit exhibits a locking range from 10.1 to 11 GHz. At an output frequency of 10.3 GHz, the measured peak-to-peak and rms jitter are 3.78 and 0.44 ps, respectively. 相似文献
10.
Kitchen J.N. Chu C. Kiaei S. Bakkaloglu B. 《Solid-State Circuits, IEEE Journal of》2009,44(2):404-413
A combined linear and delta-modulated (DeltaM) switch-mode PA supply modulator for polar transmitters in wireless handsets is designed in a 0.25 mum CMOS process. The modulator employs a DeltaM switch-mode DC-DC buck converter to enhance the efficiency of a linear regulator at backed-off supply voltages and powers. The delta-modulator's noise-shaping characteristic, linear regulator's power supply rejection, digital pre-emphasis of the input envelope, and a closed-loop amplitude path from the PA output are simultaneously used to achieve state-of-the-art modulator performance. The presented supply modulator follows the input signal's envelope with 20 dB output dynamic range, maximum efficiency of 75.5% at an output power of 30.8 dBm, and 75 dB SFDR for envelope signals up to 4 MHz occupied RF bandwidth. For a 1625 kb/s 8 PSK RF input signal at 900 MHz, polar modulation of a commercial low-power GSM-900 PA provides 10 dB ACPR improvement. 相似文献
11.
《Photonics Technology Letters, IEEE》2009,21(5):334-336
12.
《Microwave Theory and Techniques》2009,57(8):1978-1988
13.
Yi Tang Kuang-Wei Cheng Gupta S. Paramesh J. Allstot D.J. 《IEEE transactions on circuits and systems. I, Regular papers》2008,55(3):817-827
A complex analog-to-digital converter (ADC) intended for digital intermediate frequency (IF) receiver applications digitizes analog signals at IFs with excellent power/bandwidth efficiency. However, it is vulnerable to mismatches between its in-phase and quadrature (I/Q) paths that can dramatically degrade its performance. The proposed solution mitigates I/Q mismatch effects using a complex sigma-delta (SigmaDelta) modulator cascaded with 9-bit pipeline converters in each of the I and Q paths. The quantization noise of the first stage complex modulator is eliminated using an adaptive scheme to calibrate finite-impulse response digital filters in the digital noise-cancellation logic block. Although low-pass SigmaDelta cascade ADCs are widely used because of their inherent stability and high-order noise shaping, the complex bandpass cascade architecture introduced herein maintains these advantages and doubles the noise shaping bandwidth. Digital calibration also reduces the effects of analog circuit limitations such as finite operational amplifier gain, which enables high performance and low power consumption with high-speed deep-submicrometer CMOS technology. Behavioral simulations of the complex SigmaDelta/pipeline cascade bandpass ADC using the adaptive digital calibration algorithm predict a signal-to-noise ratio (SNR) of 78 dB over a 20-MHz signal bandwidth at a sampling rate of 160 MHz in the presence of a 1% I/Q mismatch. 相似文献
14.
《Solid-State Circuits, IEEE Journal of》2009,44(4):1078-1088
15.
《Solid-State Circuits, IEEE Journal of》2008,43(12):2776-2786
16.
A low-power CMOS reconfigurable analog-to-digital converter that can digitize signals over a wide range of bandwidth and resolution with adaptive power consumption is described. The converter achieves the wide operating range by (1) reconfiguring its architecture between pipeline and delta-sigma modes; (2) varying its circuit parameters, such as size of capacitors, length of pipeline, and oversampling ratio, among others; and (3) varying the bias currents of the opamps in proportion to the converter sampling frequency, accomplished through the use of a phase-locked loop (PLL). This converter also incorporates several power-reducing features such as thermal noise limited design, global converter chopping in the pipeline mode, opamp scaling, opamp sharing between consecutive stages in the pipeline mode, an opamp chopping technique in the delta-sigma mode, and other design techniques. The opamp chopping technique achieves faster closed-loop settling time and lower thermal noise than conventional design. At a converter power supply of 3.3 V, the converter achieves a bandwidth range of 0-10 MHz over a resolution range of 6-16 bits, and parameter reconfiguration time of twelve clock cycles. Its PLL lock range is measured at 20 kHz to 40 MHz. In the delta-sigma mode, it achieves a maximum signal-to-noise ratio of 94 dB and second and third harmonic distortions of 102 and 95 dB, respectively, at 10 MHz clock frequency, 9.4 kHz bandwidth, and 17.6 mW power. In the pipeline mode, it achieves a maximum DNL and INL of ±0.55 LSBs and ±0.82 LSBs, respectively, at 11 bits, at a clock frequency of 2.6 MHz and 1 MHz tone with 24.6 mW of power 相似文献
17.
Temperature Effect on $Ku$ -Band Current-Reused Common-Gate LNA in 0.13-$mu{hbox{m}}$ CMOS Technology
Wen-Lin Chen Sheng-Fuh Chang Kun-Ming Chen Guo-Wei Huang Jen-Chung Chang 《Microwave Theory and Techniques》2009,57(9):2131-2138
This paper presents the temperature effect on a Ku-band NMOS common-gate low-noise amplifier (CG-LNA). The temperature characteristics of an NMOS transistor and spiral inductors are obtained over the temperature range from 253 to 393 K. These results show that the optimal bias condition minimizes the transconductance and drain current temperature variations. Based on these results, a current-reused CG-LNA with good temperature performance is designed. At ambient temperatures, the CG-LNA has a measured power gain of 10.3 dB and a noise figure (NF) of 4.3 dB at 15.2 GHz, while consuming 4.5 mA from a 1.3-V power supply. When the temperature varies from 253 to 393 K, the CG-LNA has a power gain variation of 3 dB, NF variation of 2 dB , and dc power consumption variation of 11.9%. This paper is the first to report the temperature effect on Ku-band CG-LNAs. 相似文献
18.
本文实现了一个采用三位三阶Δ∑调制器的高频谱纯度集成小数频率合成器.该频率合成器采用了模拟调谐和数字调谐组合技术来提高相位噪声性能,优化的电源组合可以避免各个模块之间的相互干扰,并且提高鉴频鉴相器的线性度和提高振荡器的调谐范围.通过采用尾电流源滤波技术和减小振荡器的调谐系数,在片压控振荡器具有很低的相位噪声,而通过采用开关电容阵列,该压控振荡器达到了大约100MHz的调谐范围,该开关电容阵列由在片数字调谐系统进行控制.该频率合成器已经采用0.18μm CMOS工艺实现,仿真结果表明,该频率频率合成器的环路带宽约为14kHz,最大带内相位噪声约为-106dBc/Hz;在偏离载波频率100kHz处的相位噪声小于-120dBc/Hz,具有很高的频谱纯度.该频率合成器还具有很快的反应速度,其锁定时间约为160μs. 相似文献
19.
《IEEE transactions on image processing》2009,18(9):2012-2021
20.
180$^{circ}$ and 90$^{circ}$ Phase Shifting Networks With an Octave Bandwidth and Small Phase Errors
《Microwave and Wireless Components Letters, IEEE》2009,19(8):506-508