Crystal structure and temperature dependence of permittivity in barium aluminate based solid solutions

This study systematically investigated the structural, dielectric, and ferroelectric properties of BaAl_(2−2x)(Mg_0.5Ti_0.5)_2xO₄ ceramics in the 0 ≤ x ≤ 0.04 range. Single-phase solid solutions in the P6₃ space group with hexagonal crystal symmetry were confirmed in the composition range of 0 ≤ x ≤ 0.03. The bond lengths of Al1/(Mg,Ti)–O, Al₂/(Mg,Ti)–O, and Al₃/(Mg,Ti)–O increased with the increase in x, as confirmed through the Rietveld refinement and evolutions of corresponding modes in Raman spectra. The temperature stability of dielectric properties improved at a composition around x = 0.03, and the dielectric constant ε_r ascended with the increase in x. Ultrabroad temperature stability (−100°C to 700°C) was obtained, and an optimal combination (ε_r = 18.5, tan δ < 10⁻³, −22 ppm/°C ≤ TCC ≤ +20 ppm/°C, resistivity ~4.5 × 1014 Ω·cm) was achieved for the x = 0.03 ceramic sintered at 1260°C in air for 6 hours. The increase in stability was ascribed to the variations in axial bonds, and lattice distortions were determined through high-resolution transmission electron microscopy. The x = 0.03 ceramic could be a promising candidate for C0G or NP0 multilayer ceramic capacitors because of its low loss, high reliability, superior insulating properties and comparatively low-cost raw materials.     

Optical and Microwave Dielectric Properties of Zn‐Doped MgAl2O4 Transparent Ceramics Fabricated by Spark Plasma Sintering

(Mg_1?xZn_x)Al₂O₄ transparent ceramics were fabricated by spark plasma sintering technique at 1325°C for 10 min. A small mount of Zn²⁺ addition to MgAl₂O₄ ceramics was very effective to the performance improvement, while further increase in Zn‐doped content would give rise to the optical transmittance deterioration. The optical and microwave dielectric properties of MgAl₂O₄ transparent ceramics were improved by Zn substitution for Mg. The in‐line transmittance of the (Mg_1?xZn_x)Al₂O₄ (x = 0.02) ceramics can be as high as 70% at λ = 550 nm and 86.5% at λ = 2000 nm, respectively. The dielectric constant ε_r of (Mg_1?xZn_x)Al₂O₄ just varied from 8.32 to 8.54, however, the Q × f value increased significantly up to a maximal value of 66,000 GHz at x = 0.02. Moreover, the τ_f of (Mg_1?xZn_x)Al₂O₄ transparent ceramics changed from ?74 to ?65.5 ppm/°C. With the increasing of Zn‐doped content, the average grain size and the porosity increased, which was the primary reason for the change in optical and microwave dielectric properties.     

Effects of Mg Substitution on Order/disorder Transition,Microstructure, and Microwave Dielectric Characteristics of Ba((Co0.6Zn0.4)1/3Nb2/3)O3 Complex Perovskite Ceramics

Effects of Mg substitution on order/disorder transition, microstructure, and microwave dielectric characteristics of Ba((Co_0.6Zn_0.4)_1/3Nb_2/3)O₃ complex perovskite ceramics have been investigated. The ordered complex perovskite solid solutions are obtained in Ba((Co_0.6?x/2Zn_0.4?x/2Mg_x)_1/3Nb_2/3)O₃ ceramics (x = 0, 0.1, 0.2, and 0.3), and the ordering degree in the as‐sintered dense ceramics increases with increasing Mg‐substitution amount. The significantly improved Qf value is obtained in the present ceramics with increasing x, whereas the dielectric constant decreases slightly together with some increase of temperature coefficient of resonant frequency. The best combination of microwave dielectric characteristics is obtained in the composition of x = 0.3: ε_r = 33.7, Qf = 93 800 GHz, and τ_f = 9.6 ppm/°C. In the Mg‐substituted compositions, clear domain boundaries are obtained and the domain size increases as x increases, the highest Qf value is obtained when the domain size is about 40–60 nm in the ceramics with x = 0.3. The increased ordering degree and the fine ordering domain structure are considered to primarily contribute to the significant increase of Qf value in the Mg‐substituted Ba((Co_0.6Zn_0.4)_1/3Nb_2/3)O₃ complex perovskite ceramics.     

Crystal structure,densification, and microwave dielectric properties of Li3Mg2(Nb(1−x)Mox)O6+x/2 (0 ≤ x ≤ 0.08) ceramics

A novel system Li₃Mg₂(Nb_(1−x)Mo_x)O_6+x/2 (0 ≤ x ≤ 0.08) microwave dielectric ceramics were fabricated by the solid-state method. The charge compensation of Mo⁶⁺ ions substitution for Nb⁵⁺ ions was performed by introducing oxygen ions. The X-ray diffraction patterns and Rietveld refinements indicated Li₃Mg₂(Nb_(1−x)Mo_x)O_6+x/2 ceramics with single phase and orthorhombic structure. Micro-structure and density confirmed that the grain of Li₃Mg₂(Nb_(1-x)Mo_x)O_6+x/2 ceramics grew well. In addition, the permittivity of Li₃Mg₂(Nb_(1−x)Mo_x)O_6+x/2 ceramics with the same trend as density decreased slightly with increasing Mo⁶⁺ ions content. However, the Q*f and τ_f were obviously improved with an appropriate amount of Mo⁶⁺ ions. When x ≤ 0.04, the Q*f was closely related to the bond valence of samples, while when x ≥ 0.06, the Q*f was closely related to the density of samples. The variations of τ_f and oxygen octahedral distortion were the opposite. In conclusions, the Li₃Mg₂(Nb_0.98Mo_0.02)O_6.01 ceramic sintered at 1200°C for 6 hours exhibited outstanding properties: ε_r ~ 15.18, Q*f ~ 116 266 GHz, τ_f ~ −15.71 ppm/^oC.     

High quality factor microwave dielectric ceramics in the (Mg1/3Nb2/3)O2–ZrO2–TiO2 ternary system

Novel high quality factor microwave dielectric ceramics (1?x)ZrTiO₄?x(Mg_1/3Nb_2/3)TiO₄ (0.325≤x≤0.4) and (ZrTi)_1?y(Mg_1/3Nb_2/3)_yO₄ (0.2≤y≤0.5) with the addition of 0.5 wt% MnCO₃ in the (Mg_1/3Nb_2/3)O₂–ZrO₂–TiO₂ ternary system were prepared, using solid‐state reaction method. The relationship between the structure and microwave dielectric properties of the ceramics was studied. The XRD patterns of the sintered samples reveal the main phase belonged to α‐PbO₂‐type structure. Raman spectroscopy and infrared reflectivity (IR) spectra were employed to evaluate phonon modes of ceramics. The 0.65ZrTiO₄?0.35(Mg_1/3Nb_2/3)TiO₄?0.5 wt% MnCO₃ ceramic can be well densified at 1240°C for 2 hours and exhibits good microwave dielectric properties with a relative permittivity (ε_r) of 42.5, a quality factor (Q×f) value of 43 520 GHz (at 5.9 Ghz) and temperature coefficient of resonant frequency (τ_f) value of ?5ppm/°C. Furthermore, the (ZrTi)_0.7(Mg_1/3Nb_2/3)_0.3O₄?0.5 wt% MnCO₃ ceramic sintered at 1260°C for 2 hours possesses a ε_r of 31.8, a Q×f value of 35 640 GHz (at 6.3 GHz) and a near zero τ_f value of ?5.9 ppm/°C. The results demonstrated that the (Mg_1/3Nb_2/3)O₂–ZrO₂–TiO₂ ternary system with excellent properties was a promising material for microwave electronic device applications.     

Stability of High‐Temperature Dielectric Properties for (1 − x)Ba0.8Ca0.2TiO3–xBi(Mg0.5Ti0.5)O3 Ceramics

Ceramics in the solid solution system, (1 ? x)Ba_0.8Ca_0.2TiO₃–xBi(Mg_0.5Ti_0.5)O₃, were prepared by a conventional mixed oxide route. Single‐phase perovskite‐type X‐ray diffraction patterns were observed for compositions x < 0.6. A change from tetragonal to single‐phase cubic X‐ray patterns occurred at x ≥ 0.1. Dielectric measurements indicated relaxor behavior for x ≥ 0.1. Increasing the Bi(Mg_0.5Ti_0.5)O₃ content improved the temperature sensitivity of relative permittivity ?_r at high temperatures. At x = 0.5, a near‐plateau relative permittivity, 835 ± 40, extended across the temperature range, 65°C–550°C; the permittivity increased at x = 0.6 to 2170 ± 100 for temperatures 160°C–400°C (1 kHz). The corresponding loss tangent, tanδ, was ≤0.025 for temperatures between 100°C and 430°C for composition x = 0.5; at x = 0.6, losses increased sharply at >300°C. Comparisons of dielectric properties with other materials proposed for high‐temperature capacitor applications suggest that (1 ? x)Ba_0.8Ca_0.2TiO₃–xBi(Mg_0.5Ti_0.5)O₃ ceramics are a promising base material for further development.     

Effects of W6+ substitution on crystal structure and microwave dielectric properties of Li3Mg2NbO6 ceramics

Li₃Mg₂(Nb_1-xW_x)O_6+x/2 (0 ≤ x ≤ 0.08) ceramics were synthesized by the solid-state reaction route. The effects of W⁶⁺ substitution on the phase composition, microstructure and microwave dielectric properties of Li₃Mg₂NbO₆ ceramics were investigated systematically. The XRD results showed that all the samples formed a pure solid solution in the whole doping range. The SEM iamges and relative density revealed the dense structure of Li₃Mg₂(Nb_1-xW_x)O_6+x/2 ceramics. The relationship between the crystal structure and dielectric properties of Li₃Mg₂(Nb_1-xW_x)O_6+x/2 ceramics was researched through polarizability, average bond valence, and bond energy. The substitution of W⁶⁺ for Nb⁵⁺ in Li₃Mg₂(Nb_1-xW_x)O_6+x/2 ceramics significantly promoted the Q × f values. In addition, the increase of W⁶⁺ content improved the thermal stability of the Li₃Mg₂(Nb_1-xW_x)O_6+x/2 ceramics. The Li₃Mg₂(Nb_0.94W_0.06)O_6.03 ceramics sintered at 1175 °C for 6h possessed excellent properties: ε_r ~ 15.82, Q × f ~ 124,187 GHz, τ_f ~ −18.28 ppm/°C.     

Effect of TiO2 Doping on the Structure and Microwave Dielectric Properties of Cordierite Ceramics

The (1?x)Mg₂Al₄Si₅O₁₈–xTiO₂ |(1?x)MAS‐xT| (0 ≤ x ≤ 0.35) cordierite ceramics are fabricated by solid‐state reaction method for obtaining near‐zero temperature coefficient of resonant frequency (τ_f). The XRD and SEM results show that (1?x)MAS‐xT (0 ≤ x ≤ 0.10) ceramics exhibit single cordierite solid solution, whereas as 0.15 ≤ x ≤ 0.35, present composite phases of Mg₂Al₄Si₅O₁₈ solution and TiO₂. Rietveld refinements of XRD data suggest that the [(Si₄Al₂)O₁₈] hexagonal shape in cordierite structure happens to alternate change from nonsymmetrical hexagonal rings to almost centrosymmetrical equilateral rings as x increases to 0.10 comparing to that of x = 0. As Ti⁴⁺ ions squeeze into the [(Si₄Al₂)O₁₈] rings structure, the orientation and shapes of the rings begin to rotate and expand from initial state of [1–20] (x = 0) to near [210] direction (x = 0.10), and then continue to expand toward close to [110] direction (x = 0.25). Due to centrosymmetry adjustment of [(Si₄Al₂)O₁₈] hexagonal rings and of other microstructure factors improvement, the (1?x)MAS‐xT (x = 0.10) cordierite solution achieves optimum quality factor Q_f: ε_r = 6.3, Q_f = 55 400 GHz (17.6 GHz), τ_f = ?21 ppm/°C. The (1?x)MAS‐xT (x = 0.25) composites obtain a near‐zero temperature coefficient of resonance frequency: ε_r = 6.8, Q_f = 37 800 GHz (18.4 GHz), τ_f = ?0.2 ppm/°C.     

Effects of Postdensification Annealing upon Microstructures and Microwave Dielectric Characteristics in Ba((Co0.6−x/2Zn0.4−x/2Mgx)1/3Nb2/3)O3 Ceramics

Effects of postdensification annealing upon microstructures and microwave dielectric characteristics in Ba((Co_0.6?x/2Zn_0.4?x/2Mg_x)_1/3Nb_2/3)O₃ (x = 0, 0.1, 0.2, and 0.3) complex perovskite ceramics have been investigated. Long‐time annealing at temperatures below the order–disorder transition temperature enhances the cation ordering degree and promotes the ordering domain growth. The most significant improvement of Qf value is obtained together with the suppressed temperature coefficient of resonant frequency in the samples annealed at 1400°C for 12 h, while the dielectric constant decreases slightly. The Qf value of ceramics annealed at 1400°C mainly attributes to the enhanced cation ordering degree, because their low‐energy domain boundaries are not detrimental to the Qf value. As the annealing temperature increases close to the transition temperature, coarse ordering domains with high‐energy boundaries are formed, and then the Qf value steadily decreases because of the inferior domain structure, even the cation ordering degree increases. The microwave dielectric characteristics of Ba((Co_0.6?x/2Zn_0.4?x/2Mg_x)_1/3Nb_2/3)O₃ ceramics are affected by the common function of ordering degree and domain structure. The best combination of microwave dielectric characteristics is obtained in the composition of x = 0.3 after annealing at 1400°C for 12 h: ε_r = 33.2, Qf = 117 200 GHz, and τ_f = 8.6 ppm/°C.     

Preparation and Electric Properties of Bi0.5Na0.5TiO3–Bi(Mg0.5Ti0.5)O3 Lead‐Free Piezoceramics

Lead‐free BNT‐based piezoceramics, (1?x)Bi_0.5Na_0.5TiO₃–xBi(Mg_0.5Ti_0.5)O₃ [(1?x)BNT–xBMT] (0.00 ≤ x ≤ 0.06) binary system, were synthesized using a conventional ceramic fabrication method. Effect of Bi(Mg_0.5Ti_0.5)O₃ (BMT) substitution on room temperature (RT) crystal structure, and temperature dependence of electric properties were investigated. The XRD indicates that a pure perovskite phase is formed. The introduction of BMT decreases E_C of BNT from 7.3 to 4.0 kV/mm, and increases d₃₃ from 58 pC/N to 110 pC/N for the x = 0.05. The system shows a typical ferroelectric (FE) polarization loop P(E) and butterfly bipolar strain‐electric S(E) curve at RT. For the composition of 0.95BNT–0.05BMT antiferroelectric (AFE) phase appears near 80°C, characterized by a constricted P(E) loop and altered bipolar S(E) butterfly, and gradually prevails with increasing temperature. Temperature dependence of dielectric constant shows that T_C increases from 310°C for pure BNT to 352°C for the x = 0.05. The results indicate that the piezoelectric properties of BNT have been improved by means of Bi(Mg_0.5Ti_0.5)O₃ substitution.     

Negative thermal expansion coefficient of Sc-doped indium tungstate ceramics synthesized by co-precipitation

Co-precipitation was successfully applied to synthesize the Sc³⁺ doped In_2-xSc_x (WO₄)₃ (x = 0, 0.3, 0.6, 0.9 and 1.2) compounds. The composition- and temperature-induced structural phase transition and thermal expansion behaviors of Sc³⁺ doped In₂(WO₄)₃ were investigated. Results indicate that In_2-xSc_x (WO₄)₃ crystalizes in a monoclinic structure at 300 °C for x ≤ 0.3 and changes into hexagonal structure for x ≥ 0.6. Hexagonal In_1.1Sc_0.9(WO₄)₃ displays negative thermal expansion (NTE) with an average linear coefficient of thermal expansion (CTE) of −1.85 × 10⁻⁶ °C ⁻¹. After sintering at 700 °C and above, a phase transition from hexagonal to orthorhombic phase was observed in In_2-xSc_x (WO₄)₃ (x ≥ 0.6). Sc³⁺ doping successfully reduce the temperature-induced phase transition temperature of In_2-xSc_x (WO₄)₃ ceramics from 250 °C (x = 0) to room temperature (x = 0.9). When x = 0.9 and 1.2, the average linear CTEs of In_2-xSc_x (WO₄)₃ ceramics are −5.45 × 10⁻⁶ °C⁻¹ and -4.43 × 10⁻⁶ °C⁻¹ in a wider temperature range of 25–700 °C, respectively.     

Improved thermal stability of the piezoelectric properties of (Li,Ag)‐co‐modified (K,Na) NbO3‐based ceramics prepared by spark plasma sintering

High‐performance lead‐free piezoelectric ceramics 0.94(K_0.45Na_0.55)_1?xLi_x(Nb_0.85Ta_0.15)O₃–0.06AgNbO₃ (KNNLTAg‐x) were successfully prepared by spark plasma sintering technique. The doping effect of Li on the structural and electrical properties of KNNLTAg‐x (x=0, 0.02, 0.04, 0.06, 0.08 and 0.10) ceramics was studied. The lattice structure, ferroelectric and piezoelectric properties of the KNLNTAg‐x ceramics are highly dependent on the Li doping level. In particular, the Li dopant has a great impact on both Curie temperature T_c and orthorhombic‐tetragonal transition temperature T_O‐T. The 4% Li‐doped sample exhibited relatively high T_O‐T of 95°C, leading to a stable dynamic piezoelectric coefficient (d₃₃*) of 220‐240 pm/V in a broad temperature range from 25°C to 105°C. Additionally, the 2% Li‐doped sample shows a high d₃₃* of 320 pm/V at 135°C, suggesting its great potential for high‐temperature applications.     

Temperature stable K0.5(Nd1−xBix)0.5MoO4 microwave dielectrics ceramics with ultra‐low sintering temperature

K_0.5(Nd_1?xBi_x)_0.5MoO₄ (0.2 ≤ x ≤ 0.7) ceramics were prepared via the solid‐state reaction method. All ceramics densified below 720°C with a uniform microstructure. As x increased from 0.2 to 0.7, relative permittivity (?_r) increased from 13.6 to 26.2 commensurate with an increase in temperature coefficient of resonant frequency (TCF) from – 31 ppm/°C to + 60 ppm/°C and a decrease in Qf value (Q = quality factor; f = resonant frequency) from 23 400 to 8620 GHz. Optimum TCF was obtained for x = 0.3 (?15 ppm/°C) and 0.4 (+4 ppm/°C) sintered at 660 and 620°C with ?_r ~15.4, Q_f ~19 650 GHz, and ?_r ~17.3, Q_f ~13 050 GHz, respectively. Ceramics in this novel solid solution are a candidate for ultra low temperature co‐fired ceramic (ULTCC) technology.     

Structure‐Dependent Microwave Dielectric Properties and Middle‐Temperature Sintering of Forsterite (Mg1–xNix)2SiO4 Ceramics

The crystal structure, microstructure, and microwave dielectric properties of forsterite‐based (Mg_1–xNi_x)₂SiO₄ (x = 0.02–0.20) ceramics were systematically investigated. All samples present a single forsterite phase of an orthorhombic structure with a space group Pbnm except for a little MgSiO₃ secondary phase as x > 0.08. Lattice parameters in all axes decrease linearly with increasing Ni content due to the smaller ionic radius of Ni²⁺ compared to Mg²⁺. The substitution of an appropriate amount of Ni²⁺ could greatly improve the sintering behavior and produce a uniform and closely packed microstructure of the Mg₂SiO₄ ceramics such that a superior Q × f value (152 300 GHz) can be achieved as x = 0.05. The τ_f value was found to increase with increasing A‐site ionic bond valences. In addition, various additives were used as sintering aids to lower the sintering temperature from 1500°C to the middle sintering temperature range. Excellent microwave dielectric properties of ε_r~6.9, Q × f~99800 GHz and τ_f~?50 ppm/°C can be obtained for 12 wt% Li₂CO₃‐V₂O₅‐doped (Mg_0.95Ni_0.05)₂SiO₄ ceramics sintered at 1150°C for 4 h.     

Novel Series of Low‐Firing Microwave Dielectric Ceramics: Ca5A4(VO4)6 (A2+ = Mg,Zn)

Using a conventional solid‐state reaction Ca₅A₄(VO₄)₆ (A²⁺ = Mg, Zn) ceramics were prepared and their microwave dielectric properties were investigated for the first time. X‐ray diffraction revealed the formation of pure‐phase ceramics with a cubic garnet structure for both samples. Two promising ceramics Ca₅Zn₄(VO₄)₆ and Ca₅Mg₄(VO₄)₆ sintered at 725°C and 800°C were found to possess good microwave dielectric properties: ε_r = 11.7 and 9.2, Q × f = 49 400 GHz (at 9.7 GHz) and 53 300 GHz (at 10.6 GHz), and τ_f = ?83 and ?50 ppm/°C, respectively.     

Orthorhombic‐pseudocubic phase transition and piezoelectric properties of (Na0.5K0.5)(Nb1−xSbx)‐SrZrO3 ceramics

0.96(Na_0.5K_0.5)(Nb_1?xSb_x)‐0.04SrZrO₃ ceramics with 0.0≤x≤0.06 were well sintered at 1060°C for 6 hours without a secondary phase. Orthorhombic‐tetragonal transition temperature (T_O‐T) and Curie temperature (T_C) decreased with the addition of Sb₂O₅. The decrease in T_C was considerable compared to that in T_O‐T, and thus the tetragonal phase zone disappeared when x exceeded 0.03. Therefore, a broad peak for orthorhombic‐pseudocubic transition as opposed to that for orthorhombic‐tetragonal transition appeared at 115°C‐78.2°C for specimens with 0.04≤x≤0.06. An orthorhombic structure was observed for specimens with x≤0.03. However, the polymorphic phase boundary structure containing orthorhombic and pseudocubic structures was formed for the specimens 0.04≤x≤0.06. Furthermore, a specimen with x=0.055 exhibited a large piezoelectric strain constant of 325 pC/N, indicating that the coexistence of orthorhombic and pseudocubic structures could improve the piezoelectric properties of (Na_0.5K_0.5)NbO₃‐based lead‐free piezoelectric ceramics.     

Experimental and theoretical study on the resistive properties of LaCo0·4Ni0·6O3 ceramic with Mg-ion substitution

To explore an air-fireable and economically functional phase for thick-film resistors, the crystal structure, microstructure, sintering, and resistive properties of LaCo_0·4Ni_0.6−xMg_xO₃ (LCNM, x = 0.00–0.08) ceramics are studied in this paper, based on solid-state reaction experiments and theoretical calculations. With Mg-ion increase, the impurity phases of NiO and La₃Ni₄O₁₀ increased, the maximum shrinkage rate occurred at a higher temperature, and the microstructures became worse. The addition of the Mg ion increased the resistivity and decreased the temperature coefficient of resistivity (TCρ). The calculation results, including the bond population, electron density distribution, and density of states of the system agreed with the change in experimental resistivity. Relatively low resistivity and TCρ with a small absolute value could be achieved for specimens with x ≤ 0.02 sintered at 1200 °C and 1250 °C. Hence, the LCNM (x ≤ 0.02) ceramics are possible functional material for thick-film resistors.     

Ultra low loss (Mg1 − xCax)2SiO4 dielectric ceramics (x = 0 to 0.15) for millimeter wave applications

(Mg_{1 − x}Ca_x)₂SiO₄ dense ceramics (x ≥ 0.15) were prepared, and their microwave dielectric characteristics were investigated together with the structure evolution. The sintering temperature for Mg₂SiO₄ ceramics was reduced significantly with Ca²⁺substitution. (Mg_{1 − x}Ca_x)₂SiO₄ ceramics exhibited a small increase in dielectric constant (ε_r) correlated with increased crystallite size, and ultra-high quality factor Qf value was achieved throughout the compositional range. Temperature coefficient of resonant frequency (τ_f) was considerably tuned from −70 ppm/°C to −33 ppm/°C, and this improvement was deeply linked with the decreased bond valance. At x = 0.075, (Mg_{1 − x}Ca_x)₂SiO₄ ceramics exhibited the best combination of microwave dielectric characteristics: ε_r = 7.2, Qf = 199,800 GHz at 26 GHz, τ_f = −33 ppm/°C. The present ceramics could be expected as promising candidate of dielectric materials for millimeter wave applications.     

Effect of Ga2O3 on Sintering and Phase Stability of Sc2O3‐Doped Tetragonal Zirconia Prepared via Aqueous Solution Route

The effects of the presence of Ga₂O₃ on low‐temperature sintering and the phase stability of 4, 5, and 6 mol% Sc₂O₃‐doped tetragonal zirconia ceramics (4ScSZ, 5ScSZ, and 6ScSZ, respectively) were investigated. A series of zirconia sintered bodies with compositions (ZrO₂)_0.99?x(Sc₂O₃)_x(Ga₂O₃)_0.01, x = 0.04, 0.05, and 0.06 was fabricated by sintering at 1000°C to 1500°C for 1 h using fine powders that were prepared via the combination of homogeneous precipitation method and hydrolysis technique using monoclinic zirconia sols synthesized through the forced hydrolysis of an aqueous solution of zirconium oxychloride at 100°C for 168 h. The presence of 1 mol% Ga₂O₃ was effective in reducing sintering temperature necessary to fabricate dense bodies and enabled to obtain dense sintered bodies via sintering at 1100°C for 1 h. The phase stability, that is, low‐temperature degradation behavior of the resultant zirconia ceramics was determined under hydrothermal condition. The zirconia ceramics codoped with 1 mol% Ga₂O₃ and 6 mol% Sc₂O₃ (1Ga6ScZ) fabricated via sintering at 1300°C for 1 h showed high phase stability without the appearance of monoclinic zirconia phase, that is the tetragonal‐to‐monoclinic phase transformation was not observed in the 1Ga6ScZ after treatment under hydrothermal condition at 150°C for 30 h.     

Structure Stability and Microwave Dielectric Properties of (1 − x) Ba(Mg1/2W1/2) O3 + xBa(Y2/3W1/3)O3 Ceramics

The structure stabilities of double perovskite ceramics‐ (1 ? x) Ba(Mg_1/2W_1/2)O₃ + xBa(Y_2/3W_1/3)O₃ (0.01 ≤ x ≤ 0.4) have been studied by X‐ray powder diffraction (XRD), scanning electron microscopy (SEM), and Raman spectrometry in this study. The microwave dielectric properties of the ceramics were studied with a network analyzer at the frequency of about 8–11 GHz. The results showed that all the compounds exhibited face‐centered cubic perovskite structure. Part of Y³⁺ and W⁶⁺ cations occupied 4a‐site and the remaining Y³⁺ and Mg²⁺ distributed over 4b‐site, respectively, and kept the B‐site ratio 1:1 ordered. Local ordering of Y³⁺/Mg²⁺ on 4b‐site and Y³⁺/W⁶⁺ cations on 4a‐site within the short‐range scale could be observed with increasing Y‐doping content. The decomposition of the double perovskite compound at high temperature was successfully suppressed by doping with Y on B‐site. However, Ba₂Y_0.667WO₆ impurity phase appeared when x > 0.1. The optimized dielectric permittivity increased with the increase in Y doping. The optimized Q × f value was remarkably improved with small amount of Y doping (x ≤ 0.02) and reached a maximum value of about 160 000 GHz at x = 0.02 composition. Further increasing in Y doping led to the decrease in Q × f value. All compositions exhibited negative τ_f values. The absolute value of τ_f decreased with increasing Y‐doping content. Excellent combined microwave dielectric properties with ε_r = 20, Q × f = 160 000 GHz, and τ_f = ?21 ppm/°C could be obtained for x = 0.02 composition.