共查询到19条相似文献,搜索用时 78 毫秒
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氮化碳薄膜的电化学沉积及其电阻率研究 总被引:2,自引:0,他引:2
在ITO导电玻璃基底上,采用二氰二胺分散在DMF(N,N-二甲基甲酰胺)中形成的溶液做沉积液,阴极电化学沉积了CNx薄膜。X射线光电子能谱(XPS)和傅立叶转换红外光谱(FTIR)的分析结果表明,沉积的CNx薄膜的N/C比为0.7左右,碳和氮主要以C-N、C=N的形式成键,有少量的碳和氮以C≡N的形式成键。拉曼光谱测试发现其存在多个吸收峰,对其进行分析的结果表明薄膜样品中含有α-C3N4和β-C3N4相的成分。电阻率测试表明,氮化碳薄膜的电阻率值达到1012~1013Ω·cm。 相似文献
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RF等离子体CVD合成氮化碳薄膜的XPS研究 总被引:1,自引:0,他引:1
采用射频等离子体化学气相沉积技术合成氮化碳薄膜,测量其X射线光电子能谱(XPS),获得两组C(1s)电子和N(ls)电子结合能,它们是E(C^1)=398.0 ̄398.7eV,E(C^2)=284.6 ̄284.8eV;E(N^1)=398。0 ̄398.7eV,E(N^2)=400.0 ̄400.9eV。证实了薄膜中碳原子存在sp^3杂化轨道成键和sp^2杂化轨道成键两种键合形式。该方法合成的氮化碳薄 相似文献
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溶液温度对电化学沉积氧化亚铜薄膜相成分和显微结构的影响 总被引:6,自引:0,他引:6
用电化学方法在不锈钢基体上沉积多晶Cu2O薄膜并用X射线衍射和扫描电进行了分析研究了溶液温度对薄膜相组成、晶粒尺寸和择优取向的影响,当溶液的PH=9,温度低于50℃时得到的是Cu2O/Cu复相薄膜,纯Cu2O薄膜可在溶液温度高于50℃时获得,纯Cu2O薄膜具有(100)择优取向,实验发现薄膜的晶粒尺寸随溶液温度的增加从0.12μm增加到0.65μm。 相似文献
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NiTi合金上沉积氮化碳薄膜的力学和血液相容性研究 总被引:1,自引:0,他引:1
采用磁控溅射法在生物医用NiTi合金基体表面制备了Ti/CNx(x≈0.26)梯度薄膜,并制备了Ti/类金刚石(DLC)以及Ti/TiN薄膜进行对比研究. 利用显微硬度计、划痕仪比较分析了上述各薄膜的力学性能,通过表面接触角法研究了薄膜的亲水性. 着重测试并分析了溶血率和血小板粘附行为,进而对薄膜的血液相容性进行评估. 结果表明:Ti/CNx梯度薄膜与NiTi合金基底的结合牢固,结合力达到63.6N. Ti/CNx薄膜硬度为23.01GPa,和Ti/TiN薄膜硬度相当,略高于Ti/DLC薄膜. 溶血率和血小板粘附试验表明,Ti/CNx梯度薄膜能有效改善NiTi合金基底的亲水性和血液相容性,与Ti/TiN和Ti/DLC薄膜相比,Ti/CNx梯度薄膜具有最小的溶血率,仅为1.12%,并且无论在血小板的粘附数量还是在血小板变形程度都最少,因此具有良好的血液相容性. 相似文献
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电化学技术被广泛用于新型材料和结构的制备研究中。本文结合作者正在开展的研究工作,综述近年来电化学技术在半导体薄膜、氧化物超导薄膜、导电聚合物以及复合功能材料制备中的应用。该技术及其所制备的材料在光电转换、光开关和量子激光器等方面将获得广泛的应用。 相似文献
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研究了生工在硅片,合金钢片上的氮化碳薄膜的X射线衍射谱(XRD),实验结果表明在硅片上先生长Si3N4过渡层和对样品进行热处理,有利于β-C3N4晶体的生成,不同晶面的硅衬底,生长C3N4薄膜的晶面不同,合金钢片上C3N4薄膜,出现七个β-C3N4衍射峰和六个α-C3N4衍射峰,这些结果与β-C3N4和α-C3N4的晶面数据计算值相符合。 相似文献
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Fe-Pt合金薄膜作为最具有发展潜力的高密度磁记录材料而成为研究的热点.通过循环伏安法,得到了Fe-Pt-B合金薄膜最佳沉积电位。在优化条件下,采用电化学沉积法制备了Fe-Pt-B合金薄膜。利用X荧光光谱仪(EDX)、振动样品磁强计(VSM)和透射扫描电镜(SEM)对薄膜的组成、磁性能和形貌进行了初步研究.结果表明Fe-Pt合金薄膜中B的掺入可以增强薄膜的结晶度. 相似文献
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Hafnium nitride (HfN) thin films were prepared on Si (100) substrates by radio frequency magnetron sputtering with a compound target. Nitrogen composition, work function and electrical resistivity were investigated to evaluate thin film properties. Nitrogen composition and work function had little dependence on argon gas pressure and radio frequency power. Electrical resistivity showed strong correlation with the substrate temperature. When thin films were fabricated at room temperature, the electrical resistivity was 100 μΩ cm, and it became lower with an increase in the substrate temperature. When the films were fabricated at 600 °C, the resistivity became less than 50 μΩ cm. 相似文献
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磁控溅射非晶CNx薄膜的热稳定性研究 总被引:2,自引:0,他引:2
为了研究非晶CNx薄膜的热稳定性,采用射频磁控溅射方法沉积了非晶CNx薄膜样品,并在真空中退火至900℃,利用FTIR,Raman和XPS谱探讨了高温退火对CNx薄膜化学成分及键合结构的影响.研究表明:CNx薄膜样品中N原子分别与sp、sp2和sp3杂化状态的C原子相结合,退火处理极大地影响了CN键合结构的稳定性;当退火温度低于600℃时,膜内N含量的损失较少,CNx薄膜的热稳定性较好,退火温度超过600℃时,将导致CNx膜中大多数C、N间的键合分离,造成N大量损失,膜的热稳定性下降;退火可促使膜内sp3型键向sp2型键转变,在膜中形成大量的sp2型C键,导致CNx膜的石墨化. 相似文献
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Edgar D. Rivera-Tapia Cristian A. Fajardo Álvaro J. Ávila-Vega Carlos F. Ávila Francisco M. Sánchez-Arévalo Iván Chango-Villacís 《Fullerenes, Nanotubes and Carbon Nanostructures》2016,24(1):8-12
A solid state synthesis of boron carbon nitride oxide (BCNO) material was carried out starting from urea and boric acid treated at 600°C. The X-ray diffraction pattern corresponded to amorphous BCNO with an interlayer distance of 3.49 Å. The material had a layered structure similar to that of graphite and hexagonal boron nitride (h-BN). Infrared spectroscopy (IR) showed bands which were similar to those typical of BN and carbon nitride. The presence of boron was also confirmed by energy dispersive spectroscopy in an amount compatible with the IR spectrum. The spectra obtained by X-ray photoelectron spectroscopy (XPS) corresponded to those of a BCNO family with a considerable content of oxygen too. The optical band gap was estimated to be 3.22 eV, typical of a wide band-gap semiconductor. The particle size was very dispersed from micro to nanosize. The material dispersed in polar solvents formed stable suspensions due to the presence of hydroxyl groups. 相似文献
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M. Marton D. Koval?íkM. Vojs E. ZdraveckáM. Varga L. MichalíkováM. Veselý R. RedhammerP. Píse?ný 《Vacuum》2012,86(6):696-698
The corrosion behavior along with biocompatibility and mechanical properties plays an important role in determining of biomedical implants feasibility. Diamond-like carbon seems to be the promising material in which all these three requirements can be achieved. In this study nitrogen doped amorphous carbon (a-C:N) films were deposited on silicon and medical CoCrMo alloy substrates by vacuum glow discharge sputtering technique using different deposition conditions from graphite target. Potentiodynamic polarization tests were employed to assess the corrosion performances of the films at room temperature in 0.89 wt. % NaCl solution. The influence of substrate bias on the electrochemical corrosion behavior was investigated. The highest value off Ecorr for CoCrMo substrate was measured on the coating deposited with substrate bias around −0.6 kV. The shift of Ecorr to more positive values was about 350 mV. 相似文献
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D.V. Shtansky Y. >Yamada-Takamura T. Yoshida Y. Ikuhara 《Science and Technology of Advanced Materials》2013,14(4):219-225
The mechanism and the crystallography of the nucleation and growth of cubic boron nitride (c-BN) films deposited on 〈100〉-oriented silicon substrate by RF bias sputtering have been studied by means of cross-sectional high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. Both methods provide experimental information showing no sp2-bonded BN layer formation in the subsurface region of c-BN phase. This is clear evidence for layer-by-layer homoepitaxial growth of cubic boron nitride without graphitic monolayers in the near-surface region of the film. The turbostratic boron nitride (t-BN) consists of thin sub-layers, 0.5–2 nm thick, growing in such a way that a sub-layer normal is almost parallel to the growth direction. t-BN also comprises a large volume fraction of the grain boundaries with high interface energies. The present result and the finding by Shtansky et al. [Acta Mater. 48, 3745 (2000)], who showed that an individual sub-layer consists of parallel lamellae in both the hexagonal +h-BN) and rhombohedral (r-BN) configurations, demonstrate that high intrinsic stress in the films is due to the complex structure of sp2-bonded BN. The crystallography of c-BN films indicates heteroepitaxial nucleation of cubic phase on the graphitic BN structural precursor. The present results are consistent with stress-induced c-BN formation. 相似文献
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D. V. Shtansky Y. Yamada-Takamura T. Yoshida Y. Ikuhara 《Science and Technology of Advanced Materials》2000,1(4):1046
The mechanism and the crystallography of the nucleation and growth of cubic boron nitride (c-BN) films deposited on 100-oriented silicon substrate by RF bias sputtering have been studied by means of cross-sectional high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. Both methods provide experimental information showing no sp2-bonded BN layer formation in the subsurface region of c-BN phase. This is clear evidence for layer-by-layer homoepitaxial growth of cubic boron nitride without graphitic monolayers in the near-surface region of the film. The turbostratic boron nitride (t-BN) consists of thin sub-layers, 0.5–2 nm thick, growing in such a way that a sub-layer normal is almost parallel to the growth direction. t-BN also comprises a large volume fraction of the grain boundaries with high interface energies. The present result and the finding by Shtansky et al. [Acta Mater. 48, 3745 (2000)], who showed that an individual sub-layer consists of parallel lamellae in both the hexagonal (h-BN) and rhombohedral (r-BN) configurations, demonstrate that high intrinsic stress in the films is due to the complex structure of sp2-bonded BN. The crystallography of c-BN films indicates heteroepitaxial nucleation of cubic phase on the graphitic BN structural precursor. The present results are consistent with stress-induced c-BN formation. 相似文献
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C. JinM. Delmas P. AubertF. Alvarez T. MinéaM.C. Hugon B. Bouchet-Fabre 《Thin solid films》2011,519(12):4097-4100
Tantalum nitride (TaNx) films are usually used as barriers to the diffusion of copper in the substrate for electronic devices. In the present work, the TaNx coating plays an extra role in the iron catalyzed chemical vapor deposition production of carbon nanotubes (CNT). The CNTs were grown at 850 °C on TaNx films prepared by radio frequency magnetron sputtering. The correlation between the CNT morphology and growth rate, and the pristine TaNx film nature, is investigated by comparing the evolution of the nano-composition, roughness and nano-crystallinity of the TaNx films both after annealing and CVD at 850 °C. 相似文献
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This paper describes the growth of multi-phase carbon nitride films using hot-wire chemical vapor deposition (HWCVD) on (100)-oriented crystalline Si substrates. A mixture of either CH4/NH3 or CH4/N2 was activated over a hot tungsten filament under varying deposition conditions. The samples were characterized by atomic force microscopy (AFM) and X-ray diffraction (XRD). AFM micrographs show the presence of facetted crystallites. The XRD peaks observed were compared with theoretical predictions for -C3N4 and β-C3N4—the two ultra-hard phases of carbon nitride. The results suggest the presence of -C3N4 and β-C3N4, as well as other unidentified phases in our films. We also calculated the equilibrium concentration of the various gas species as a function of temperature and pressure. Our results indicate that CN and C2N2 radicals are possible precursors to carbon nitride growth. 相似文献
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Young-Rok Noh 《Thin solid films》2010,519(5):1636-1641
The effects of amorphous carbon nitride (CN) thin films that were coated on carbon nanotubes (CNTs) and their thermal treatment were investigated, in terms of the chemical bonding and morphologies of the CNTs and their field emission properties. CNTs were directly grown on conical tip-type tungsten substrates via the inductively coupled plasma-chemical vapor deposition (ICP-CVD) system, and the CNTs were coated with CN films using the RF magnetron sputtering system. The CN-coated CNTs were thermally treated using the rapid thermal annealing (RTA) system by varying the temperature (300-700 °C). The morphologies, microstructures, and chemical compositions of the CN-coated CNTs were analyzed as a function of the thickness of the CN layers and the RTA temperatures. The field emission properties of the CN/CNT hetero-structured emitters, and the fluctuation and long-term stability of the emission currents were measured and compared with those of the conventional non-coated CNT-emitter. The results showed that the electron emission capability of CNT was noticeably improved by coating a thin CN layer on the surface of the CNT. This was attributed to the low work function and negative electron affinity nature of the CN film. The CN-coated CNT-emitter had a more stable emission characteristic than that of the non-coated one. In addition, the long-term emission stability of the CN-coated emitter was further enhanced by thermal treatment, which was verified by x-ray photoelectron spectroscopy (XPS) analysis. 相似文献