基于HgCdTe薄膜和GaAs／AlGaAs多量子阱的红外光电探测器列阵

俄罗斯科学院西伯利亚分院半导体物理研究所设计并制作了若干用于3μm～12μm光谱范围的光电探测器组件.这些光电探测器组件都是以用分子束外延方法生长的Hg1-xCdxTe/GaAs异质结构和GaAs/AlGaAs多量子阱结构为基础的,其HgCdTe光敏层长在带CdZnTe中间缓冲层的GaAs衬底上.为了减少表面对复合过程的影响,生长了增加表面组分的渐变带隙HgCdTe层.     

DBR掺饵光纤激光器的功率特性研究

本文主要研究ＤＢＲ掺饵光纤激光器的功率特性。通过对光纤Ｂｒａｇｇ光栅的光谱特性和激光器的传播方程的分析,得到了阈值泵浦光功率、掺饵光纤长度、Ｂｒａｇｇ光栅反射率与激光器输出光功率之间的关系。与近期报道的实验数据进行了比较,结果十分吻合。     

P—type AlAs／[GaAs／AlAs]Semiconductor／Superlattice DBR Grown by MBE

A p-type AlAs(70.2 nm)/16.5 period [GaAs(3 nm)/AlAs(0.7 nm)] semiconductor/superlatice distributed Bragg reflector (DBR) has been grown on n +-GaAs(100) substrate by V80H molecular beam epitaxy system. Experimental reflection spectrum shows that its central wavelength is 820 nm, with the peak reflectivity for 10-pair DBR of as high as 96 %, and the reflection bandwidth of as wide as 90 nm. We formed a 20×20 μm 2 square mesa to measure the series resistance using wet chemical etching. From the measurement result, the series resistance of about 50 Ω is obtained at a moderate doping (3×10 18 cm -3 ). Finally, the dependence of the resistance of the DBR on the temperature is analyzed. From the experimental result, it is found that the mechanism of the low series resistance of this kind of DBR may increase the tunneling current in the semiconductor/superlattice mirror structure, which will result in a decrease in series resistance.     

短周期AlGaAs/GaAs超晶格的MOCVD生长及X射线衍射研究

生长了短周期 Al Ga As/ Ga As超晶格 ,并通过双晶 X射线衍射谱 ,对 MOCVD超薄层Al Ga As、Ga As的生长进行了研究。从衍射谱卫星峰的级数及 Pendellosong干涉条纹的出现 ,定性地对晶格结构及界面作出评价。 X光衍射测量结果与 HEMT结构电学性能测试结果有较好的对应关系。     

MOCVD生长高反射率AlN/GaN分布布拉格反射镜

利用金属有机物化学气相沉积(MOCVD)方法在蓝宝石c面衬底上制备出高反射率AlN/GaN分布布拉格反射镜(DBR).利用分光光度计测量,在418 nm附近最大反射率达到99%.样品表面显微照片显示,有圆弧形缺陷和少量裂纹出现;在缺陷和裂纹以外的区域,DBR具有较为平坦的表面,其粗糙度在10μm×10μm面积上为3.3 m左右.样品的截面扫描电镜(SEM)照片显示,DBR具有良好的周期性.对反射率和表面分析的结果表明,该样品达到了制备GaN基垂直腔面发射激光器(VCSEL)的要求.     

DBR结构参数的X射线双晶衍射研究

利用X射线双晶衍射方法,测定了分布布拉格反射镜(DBR)的衍射回摆曲线,除了DBR主衍射峰(“0“级衍射峰)外,还观察到“1“级和“2“级卫星峰。“0“级双晶衍射峰的半高宽为12.36″,衬底GaAs的衍射峰半高宽为11.57″。“0“级衍射峰半高宽与衬底GaAs的衍射峰半高宽比较接近,表明晶格具有很高的完整性。由这些衍射峰之间的角距离,计算出了DBR的周期D及Al含量x值。X射线双晶衍射结果表明生长所得结构与设计相符合。     

低压MOCVD生长ZnO单晶薄膜的制备与性质

利用 LP-MOCVD生长技术 ,采用 Zn(C2 H5) 2 作 Zn源和 CO2 作氧源 ,在 (0 0 0 2 )蓝宝石衬底上获得了沿 c轴取向高度一致的 Zn O单晶薄膜。通过对其吸收谱的曲线拟合 ,得到室温下 Zn O薄膜的光学带隙为 3 .2 45e V。在样品的室温光荧光谱 (PL)中观察到对应于带边发射的较强的发光峰 ,对样品中蓝带的产生原因进行了讨论     

半导体/超晶格分布布拉格反射镜(DBR)的分子束外延生长

用分子束外延技术 (MBE)生长了以 Ga As/Al As超晶格替代 Alx Ga1 - x As所形成的 P型半导体 /超晶格分布布拉格反射镜 (DBR) .此分布布拉格反射镜的反射谱中心波长为 85 0 nm.由实验表明 ,19个周期的反射镜获得了高达 99%以上的高反射率 .与此同时 ,采取自行设计的二次钨丝掩膜质子注入法制成 15 μm× 15 μm的正方形电流注入区 ,以此测定 P型反射镜的串联电阻 ,克服了湿化学腐蚀法中腐蚀深度不易控制及侧面同时被腐蚀的缺点 ,实验得出此 P型反射镜的串联电阻仅为 5 0 Ω 左右 .在生长过程中 ,发现在只含一个铝源的分子束外延生长系统中 ,生长这种半     

高亮度AIGalnP红光发光二极管

对用于提高AlGaInP红光发光二极管(LED)出光效率的分布布拉格反射镜(DBR)和增透膜进行了分析,用金属有机物化学气相沉积(MOCVD)生长了包含DBR和增透膜的LED,在20mA注入电流下,LED的峰值波长为623nm,光强达到200mcd,输出光功率为2.14mW。与常规的LED相比,光强和输出光功率有很大的提高。     

Photoluminescence and X-ray Diffraction of Distributed Bragg Reflector

Spectral and structural characteristics of distributed Bragg reflector (DBR) in vertical-cavity surface-emitting lasers were studied with photoluminescence and double- crystal X- ray diffraction measurement. The expected high quality epitaxial DBR structure was verified. In the X- ray double- crystal rocking curves of DBR the zeroth- order peak, the first and second order satellite peaks were measured. Splitting of diffraction peak appeared in the rocking curves was analyzed. The effects of introduced deep energy levels on the structural perfection and optical properties were discussed.     

A Four‐Channel Laser Array with Four 10 Gbps Monolithic EAMs Each Integrated with a DBR Laser

A distributed Bragg reflector (DBR) laser and a high speed electroabsorption modulator (EAM) are integrated on the basis of the selective area growth technique. The typical threshold current is 4 to 6 mA, and the side mode suppression ratio is over 40 dB with single mode operation at 1550 nm. The DBR laser exhibits 2.5 to 3.3 mW fiber output power at a laser gain current of 100 mA, and a modulator bias voltage of 0 V. The 3 dB bandwidth is 13 GHz. A 10 Gbps non‐return to zero operation with 12 dB extinction ratio is obtained. A four‐channel laser array with 100 GHz wavelength spacing was fabricated and its operation at the designed wavelength was confirmed.