Domain wall motion in synthetic Co2Si nanowires

We report the synthesis of single crystalline Co(2)Si nanowires and the electrical transport studies of single Co(2)Si nanowire devices at low temperature. The butterfly shaped magnetoresistance shows interesting ferromagnetic features, including negative magnetoresistance, hysteretic switch fields, and stepwise drops in magnetoresistance. The nonsmooth stepwise magnetoresistance response is attributed to magnetic domain wall pinning and depinning motion in the Co(2)Si nanowires probably at crystal or morphology defects. The temperature dependence of the domain wall depinning field is observed and described by a model based on thermally assisted domain wall depinning over a single energy barrier.     

Ultralong single-crystal metallic Ni2Si nanowires with low resistivity

Ultralong, single-crystal Ni2Si nanowires sheathed with amorphous silicon oxide were synthesized on a large scale by a chemical vapor transport (CVT) method, using iodine as the transport reagent and Ni2Si powder as the source material. Structural characterization using powder X-ray diffraction, electron microscopy, and energy-dispersive spectroscopy shows that the nanowires have Ni2Si-SiOx core-shell structure with single-crystal Ni2Si core and amorphous silicon oxide shell. The oxide shell is electrically insulating and can be removed by HF etching. Four-terminal electrical measurements show that the single-crystal nanowire has extremely low resistivity of 21 muOmega.cm and is capable of supporting remarkably high failure current density >108 A/cm2. These unique Ni2Si nanowires are very attractive nanoscale building blocks for interconnects and fully silicided (FUSI) gate applications in nanoelectronics.     

Silica encapsulated Ni nanoparticles: variation of optical and magnetic properties with particle size

Ni nanoparticles embedded in SiO2 matrix were prepared by sol-gel process. The molar percentages of Ni were varied from 2 to 20% of total SiO2 present in the matrix. Transmission electron microscope (TEM) images revealed that particle sizes varied from 8.0-15.7 nm at an annealing temperature of 773 K with variation of concentration. The optical absorption spectra revealed that the surface plasmon resonance (SPR) peak in the UV region of the spectrum shifted with the particle diameter (D) from that at 247.3 nm for D = 8.0 nm to 250.7 nm for D = 15.7 nm. In hysteresis loop measurements the magnetizations (M) of the nanocomposites also increased with higher Ni content in the matrix and did not saturate in the measuring limit of the magnetic filed (H) of 4 KOe. The anhysteric curves for different samples were analyzed with the law of approach to saturation (LAS). The zero field cooled (ZFC) and field cooled (FC) magnetization measurements at 50 Oe showed increasing broadening of the ZFC curve with the higher Ni content. To calculate the average blocking temperature ((T(B a distribution of the blocking temperatures (T(B)) was assumed to initiate theoretical fittings and it was found to be increasing with the Ni concentration in the matrix.     

Size dependent magnetization and high-vacuum annealing enhanced ferromagnetism in Zn(1-x)Co(x)O nanowires

Diameter controllable ZnO nanowires have been fabricated by thermal evaporation (vapor transport) with various sizes of gold nanoparticles as catalysts. Diluted magnetic semiconductor (DMS) Zn(1-x)Co(x)O nanowires were then made by high energy Co ion implantation. The as-implanted and the argon-annealed Zn(1-x)Co(x)O nanowires displayed weak ferromagnetism while the high-vacuum annealed nanowires exhibited strong ferromagnetic ordering at room temperature. Size dependent behavior has been observed in the magnetic field and temperature dependences of magnetization. The shrinkage of the nanowire diameter reduced the spontaneous magnetization as well as the hysteresis loops. Field cooled and zero-field cooled magnetization and coercivity measurements were performed between 2 and 300 K to study the evolution of magnetism from the weak to the strong ferromagnetic states. In particular, superparamagnetic features were observed and shown to be intrinsic characteristics of the DMS Zn(1-x)Co(x)O nanowires. The room-temperature spontaneous magnetization of individual Zn(1-x)Co(x)O nanowires was also established by using magnetic force microscope measurements.     

Magnetic properties of magnetically soft nanocomposite Co-SiO2 prepared via mechanical milling

Nanocomposite of Co-SiO2, a soft magnetic material, with Co weight fraction x = 0.3 and 0.7 was prepared via mechanical milling. The magnetic properties of these samples, both zero-field-cooled (ZFC) and field-cooled (FC), have been measured as a function of x, milling time, and temperature. The structural assessment of the composite indicates a presence of only ferromagnetic (FM) hcp-Co phase in the composite. However, reported magnetic properties of these composites appear to be dependent on the presence of antiferromagnetic (AFM) phases of cobalt oxide as well. The observed enhancement in ZFC coercivity and a reduction in saturation magnetization with the milling time are due to an increase in defect density upon milling. The ZFC coercivity for the x = 0.3 samples has been found to be much higher than the x = 0.7 samples for all milling times. The coercivity above 50 K depends on temperature according to the law corresponding to isotropic uniaxial superparamagnetic particles. Below 50 K the presence of an AFM phase Co3O4 (TN approximately 33 K) and increased interparticle interactions bring in a departure from that law. The saturation magnetization is found to be temperature dependent for the x = 0.3 samples and temperature independent for the x = 0.7 samples, which further provides evidence of the presence of higher AFM phase fraction in the composite with a low metal volume fraction. The FC magnetic measurements show a presence of an exchange bias field and an enhanced coercivity which are higher than the ZFC measurements. All magnetic measurements indicate that the overall magnetic properties of the composite are dictated by the presence of a trace amount of cobalt oxides.     

Influence of Na Addition on Magnetic and Magnetocaloric Effects of La<Subscript>0.67</Subscript>Pb<Subscript>0.13</Subscript>Na<Subscript>0.2</Subscript>MnO<Subscript>3</Subscript> Ceramics

Structural, magnetic, magnetocaloric, and electrical properties are reported for mixed-valence manganite La_0.67Pb_0.13Na_0.2MnO₃. X-ray diffraction reveals that the sample crystallizes in the rhombohedric structure with the R-3c space group. The magnetic properties of the polycrystalline La_0.67Pb_0.13Na_0.2MnO₃ compound are discussed in detail, based on the susceptibility, magnetization, and isotherm. The sample presents a ferromagnetic property with T _C= 275 K and a Griffiths phase at T _G= 325 K which gives the existence of ferromagnetic clusters in the paramagnetic domain. A large deviation is usually observed between field cooled (FC) and zero field cooled (ZFC). M(T) is a low temperature below the blocking temperature. At 40 K, a spin-glass or a cluster-glass state is seen to arise from a ferromagnetic state. This is caused by the competition between the antiferromagnetic and ferromagnetic interactions. The electrical properties show the presence of a metal–semiconductor transition at T _M?Sc. To understand the dependence of disorder with the transport mechanism, we used the phenomenological equation for resistivity under a percolation approach, which is dependent on the phase segregation of a paramagnetic semiconductor and ferromagnetic metallic regions.     

Role of confinement on carrier transport in Ge-Si(x)Ge(1-x) core-shell nanowires

We examine the impact of shell content and the associated hole confinement on carrier transport in Ge-Si(x)Ge(1-x) core-shell nanowires (NWs). Using NWs with different Si(x)Ge(1-x) shell compositions (x = 0.5 and 0.7), we fabricate NW field-effect transistors (FETs) with highly doped source/drain and examine their characteristics dependence on shell content. The results demonstrate a 2-fold higher mobility at room temperature, and a 3-fold higher mobility at 77K in the NW FETs with higher (x = 0.7) Si shell content by comparison to those with lower (x = 0.5) Si shell content. Moreover, the carrier mobility shows a stronger temperature dependence in Ge-Si(x)Ge(1-x) core-shell NWs with high Si content, indicating a reduced charge impurity scattering. The results establish that carrier confinement plays a key role in realizing high mobility core-shell NW FETs.     

Effect of Nickel Doping on the Magnetotransport Properties of?Sm0.55Sr0.45MnO3 Manganites

We studied the effects of nickel (Ni) doping on the magneto-transport properties of Sm_0.55Sr_0.45MnO₃ manganites near the metal-insulator transition. Various concentrations of Ni-doped Sm_0.55Sr_0.45MnO₃ samples up to 10% were prepared (Ni was partially substituted at the Mn-site). The temperature dependence of resistivity and magnetoresistance were measured as a function of Ni concentrations at various applied magnetic fields. We observed a nonlinear reduction of the metal-insulator transition temperature (MIT) with increasing concentration of Ni, 5% of Ni was sufficient to completely suppress the insulator-metal transition. Moreover, we observed dramatic increases of the resistance of the doped material with an increasing Ni-doping (5% of Ni increases R by more than 1000 times). The resistivity peaks at various magnetic fields collapses on themselves at the high temperature ends above the MIT. We also performed magnetization versus temperature measurements on both Ni-free the Ni-doped samples for FC and ZFC states. The FC and ZFC curves rapidly decrease to paramagnetic state at 175 K and 130 K for ZFC and FC states, respectively. For other Ni-doped samples, we observed a reduction in the paramagnetic transition temperature with increasing Ni concentration.     

Enhanced surface-excitonic emission in ZnO/Al(2)O(3) core-shell nanowires

We report the influence of an Al(2)O(3) shell on the photoluminescence emission of ZnO nanowires. At room temperature, the spectrum of the core-shell nanowires shows a strong reduction of the relative intensity of the green defect emission with respect to the near-band-edge emission. At 5?K an increase of the relative intensity of the surface exciton band with respect to the donor-bound exciton emission is observed. Annealing the core-shell nanowires at 500?°C does not increase the green defect luminescence at 5?K. We propose a model explaining the spectral changes.     

Tunable light emission from quantum-confined excitons in TiSi2-catalyzed silicon nanowires

Visible and near-infrared photoluminescence (PL) at room temperature is reported from Si nanowires (NWs) grown by chemical vapor deposition from TiSi2 catalyst sites. NWs grown with average diameter of 20 nm were etched and oxidized to thin and passivate the wires. The PL emission blue shifted continuously with decreasing nanowire diameter. Slowed oxidation was observed for small nanowire diameters and provides a high degree of control over the emission wavelength. Transmission electron microscopy, PL, and time-resolved PL data are fully consistent with quantum confinement of charge carriers in the Si nanowire core being the source of luminescence. These light emitting nanowires could find application in future CMOS-compatible photonic devices.     

Effect of Annealing Temperature on Structural and Magnetic Properties of Zn0.94Co0.05Cu0.01O

The doped ZnO system Zn_0.94Co_0.05Cu_0.01O (ZCCO) was prepared as a nano-polycrystalline by a simple sol–gel process, then air annealed at different temperatures. Applying X-ray diffraction (XRD) and the Rietveld method, structural analysis showed that Co and Cu replace Zn substitutionally yielding ZCCO single phase. The refined u-fractional coordinate of Zn increases monotonically by an annealing temperature from 0.3546 at 500 °C reaching 0.3722 at 800 °C, very near from the ideal value 0.375. The Zn tetrahedrons become more symmetric and the distortion is gradually relieved by annealing up to 800 °C. Annealing at 900 °C introduces tetrahedron distortion in an opposite way. The zero field cooled (ZFC) and field cooled (FC) magnetization versus the temperature at different applied fields and the magnetization versus the applied field at different temperatures were carried out. The system exhibits a ferromagnetic behavior at room temperature. As the annealing temperature increases from 550 to 900 °C, the saturation magnetization at 300 K increases from 0.0507 to 0.1088 emu/g.     

Self-organized growth of Si/Silica/Er2Si2O7 core-shell nanowire heterostructures and their luminescence

Self-organized Si-Er heterostructure nanowires showed promising 1.54 microm Er(3+) optical activity. Si nanowires of about 120-nm diameter were grown vertically on Si substrates by the vapor-liquid-solid mechanism in an Si-Er-Cl-H(2) system using an Au catalyst. Meanwhile, a single-crystalline Er(2)Si(2)O(7) shell sandwiched between nanometer-thin amorphous silica shells was self-organized on the surface of Si nanowires. The nanometer-thin heterostructure shells make it possible to observe a carrier-mediated 1.53 microm Er(3+) photoluminescence spectrum consisting of a series of very sharp peaks. The Er(3+) spectrum and intensity showed absolutely no change as the temperature was increased from 25 to 300 K. The luminescence lifetime at room temperature was found to be 70 micros. The self-organized Si nanowires show great potential as the material basis for developing an Si-based Er light source.     

Magnetically assembled 30 nm diameter nickel nanowire with ferromagnetic electrodes

Facile, cost-effective, and manufacturable techniques to create single-nanowire based devices with good electrical interconnects is demonstrated by combining template directed electrodeposition, magnetic assembly, and a post-annealing in a reducing environment. Nickel nanowires with a diameter of approximately 30?nm were electrodeposited from low-stress nickel sulfamate baths at room temperature using in-house made anodized alumina as a nanotemplate. After electrodeposition, nanowires were released from the template, efficiently positioned, trapped, and assembled on ferromagnetic electrodes using the magnetic interaction between the nanowires and the electrodes. By annealing the interconnect in a reducing environment of 5%H(2)+95%N(2) at 300?°C for 30?min, the interconnect's resistance was dramatically reduced from >10?M Ω to 835?Ω. Magnetotransport studies at 300?K on a single nickel interconnect with diameters ranging from 30 to 200?nm show a strong diameter dependent magnetoresistance, which might be attributed to different domain structure within the interconnect.     

Dia-magnetic to ferro-magnetic behavioral change of Fe-catalysts based nitrogenated carbon nanotubes (NCNTs) by the process of chlorination/oxidation

In this work, we have synthesized multiwall nitrogenated carbon nanotubes (MW-NCNTs) with Fe-catalysts by the microwave plasma-enhanced chemical vapor deposition process @950 degrees C and subsequently functionalized with chlorine and oxygen. The dia-magnetic behavioral M-H loop of non-functionalized MW-NCNTs were turn into ferromagnetic behaviors by the process of chlorination and oxidation respectively; which were characterized by means of superconducting quantum interference device magnetometer within the temperature range 5-300 K. A prominent cusp like behavior is also observed at around approximately 45 K in M(FC) and M(ZFC) measurements confirming the ferromagnetic behaviors of these MW-NCNTs after chlorination and oxidation.     

Structure and Magnetic Properties of La0.66Sr0.33MnO3 Thin Films Derived Using Sol-Gel Technique

In this paper the results of a study of the structural and magnetic properties of La_0.66Sr_0.33MnO₃ (LSMO) polycrystalline films grown on glass substrate using Sol-Gel technique are presented. The samples were structurally characterized using X-ray diffraction (XRD) and scanning electron microscope (SEM) techniques. The average grain size range of 30 nm has been obtained from XRD investigations of granular LSMO samples. Zero Field Cooling (ZFC) and Field Cooling (FC) magnetization measurements have been performed and magnetic hysteresis loops of LSMO were recorded at various temperatures. The temperature dependences of the magnetization of LSMO films recorded in ZFC and FC regimes exhibited considerable difference between the curves. The blocking and the ferromagnetic phase transition temperatures of about 262?K and 300?K, respectively, were observed from magnetization measurements.     

Structural, Transport, and Magnetic Properties of (Ru0.9Nb0.1)Sr2(Gd0.67R0.67Ce0.66)Cu2O z (R = Nd, Gd, and Tb)

Samples with nominal compositions of (Ru_0.9Nb_0.1)Sr₂(Gd_0.67R_0.67Ce_0.66)Cu₂O _z (R = Nd, Gd, Tb) were prepared, and the influence of doped rare-earth element on the structural, magnetic and superconducting properties of these samples has been investigated. Resistivity and room-temperature thermoelectric power measurements showed that the superconductivity is mainly affected by the change in the hole concentration induced by doping of the rare-earth element. All of these samples exhibited weak ferromagnetic behavior at temperatures below approximately 90 K with the branching of zero-field-cooled (ZFC) and field-cooled (FC) magnetization. In the ZFC magnetization measurements, diamagnetic transition was observed at temperatures below approximately 15 K for the R=Gd and Nd samples. Magnetization measurements also revealed that the partial substitution of Tb for Gd results in a significant enhancement of weak-ferromagnetic component of the FC magnetization, as well as an increase in the magnetic ordering temperature up to 20 K. A quite opposite behavior was observed in the FC magnetization for the case of the R=Nd sample. The experimental results are discussed in conjunction with the local structural changes in the Ru sublattice, which are induced by doping of the rare-earth element, based on the results of Rietveld refinement of the X-ray diffraction data.     

Enhanced formation of low-resistivity TiSi2 contacts for deep submicron devices

Low resistivity C54-TiSi₂ is currently the most commonly used silicide for metal contacts in ultralarge scale integrated circuits devices. In the present paper, we review recent results of investigations on the effects of stress and high temperature sputtering on the formation of C54-TiSi₂. Enhanced formation of C54-TiSi₂ on (001)Si by tensile stress and high temperature sputtering is correlated to the growth of thicker amorphous interlayer at the Ti/(001)Si interface. The enhanced transformation is attributed to the presence of higher density of silicide crystallites, which serve as the nucleation sites for the C49-TiSi₂, in the amorphous layer. As a result, the average grain size of C49-TiSi₂ is smaller which leads to lower C49- to C54-TiSi₂ transformation temperature.     

Bipolar Resistive Switching of Single Gold-in-Ga(2)O(3) Nanowire

We have fabricated single nanowire chips on gold-in-Ga(2)O(3) core-shell nanowires using the electron-beam lithography techniques and realized bipolar resistive switching characteristics having invariable set and reset voltages. We attribute the unique property of invariance to the built-in conduction path of gold core. This invariance allows us to fabricate many resistive switching cells with the same operating voltage by simple depositing repetitive metal electrodes along a single nanowire. Other characteristics of these core-shell resistive switching nanowires include comparable driving electric field with other thin film and nanowire devices and a remarkable on/off ratio more than 3 orders of magnitude at a low driving voltage of 2 V. A smaller but still impressive on/off ratio of 10 can be obtained at an even lower bias of 0.2 V. These characteristics of gold-in-Ga(2)O(3) core-shell nanowires make fabrication of future high-density resistive memory devices possible.     

Synthesis and characterization of ?-Fe3N/GaN, 54/46-composite nanowires

?-Fe₃N/GaN, 54/46-composite nanowires (aspect ratio: 40), with core-shell structure, are synthesized by wet chemical method. Structural and morphological investigations are performed using X-ray diffraction (XRD)-Rietveld analysis and microscopy techniques. The encapsulation of ?-Fe₃N by GaN is probed by X-ray photoelectron spectroscopy (XPS). The in-depth profile analysis probes the large interface region consisting both the phases. Although the respective surface oxynitride phases are present, the nitride phases are dominant inside the nanowires. The interface region of the nanowires influences the low temperature magnetic behavior. The superparamagnetic and ferromagnetic fractions coexist even at 5 K, due to the nanowire size distribution. Spin-glass-like collective ordering is observed below 50 K due to the freezing of the localized frustrated spins. Room temperature photoluminescence (PL) reveals the presence of surface states in the GaN shell.     

Formation of epitaxial NiSi2 nanowires on Si(100) surface by atomic force microscope nanolithography

Ni nanowries were fabricated by atomic force microscope nanolithography, evaporation, lift-off and annealing processes. Epitaxial NiSi2 nanowires on a Si(100) surface along Si(110) and (100) directions were formed by the rapid thermal annealing treatment of the Ni nanowires at 400 degrees C. The silicide nanowires along the Si(110) direction had coherent type-A Si(111) and Si(100) interfaces, while those along the Si(100) direction had a type-A Si(110) interface. Silicide nanowires were agglomerated when the Ni nanowires were annealed at high temperature (> or = 500 degrees C). The mechanism of formation of a faceted nanowire was discussed based on the minimization of the total surface energy.