Ka波段基片集成波导带通滤波器的设计

基片集成波导(SIW)是近年发展起来的一种新型微波传输结构。应用基片集成波导技术,通过实现耦合腔间的正负耦合,设计了应用于毫米波的交叉耦合滤波器。经三维电磁仿真,通带回波损耗大于22 dB,最小插入损耗小于1.5 dB。仿真结果表明该滤波器具有极高的实际应用价值。     

毫米波300W固态功率合成放大器的设计

基于单片微波集成功率放大器(Monolithic Microwave Integrated Circuits,MMIC PA)的毫米波波导空间功率合成技术是固态毫米波高功率电子领域的热门研究方向。多合成支路情况,保持较高的合成效率和较宽的工作带宽是实现固态毫米波宽带高功率合成的关键技术难题。为提高功率合成效率,研制了石英基板微带探针与波导之间的过渡结构。结合波导T型分支、波导分支线、波导H面缝隙耦合和波导一分四型的4种波导功率分配/合成器,通过精确的电磁仿真研制了64路功率合成放大器。     

基于光子晶体波导的毫米波阻抗调配器研究

随着无线通信相关领域的发展,无线电波的应用频率已提高到毫米波频段,研究新型的毫米波阻抗调配器具有重要的实用意义。光子晶体因其有光子带隙的特点,在波导、谐振腔、滤波器等毫米波器件上有很大的尺寸优势。本文结合实际加工条件,利用电磁仿真设计了一种基于光子晶体波导的W波段阻抗调配器并对其进行优化,具有快速调配,适用范围广的优点。     

硅基毫米波共面波导可缩放神经网络模型

随着微电子工艺技术的发展,硅基CMOS器件的截止频率已经达到毫米波频段,使硅基微波单片集成电路实现成为可能。因此,建立硅基毫米波频段共面波导结构模型使准确设计硅基微波单片集成电路成为必要。文章提出了一种基于神经网络技术的共面波导结构(CPW)毫米波可缩放模型,采用3层神经网络结构,根据共面波导的测试结果,用神经网络来学习其物理变量和测试的相应S参数空间映射关系。仿真与测试结果比较表明:基于神经网络方法建立的毫米波共面波导可缩放模型对不同几何参数CPW能够快速和准确地给出对应的CPW的S参数结果。     

基片集成波导中的混合左右手结构及其应用

混合左右手传输线是一种应用电路实现的新型人工电磁媒质，具有很多新颖的特性．而基片集成波导作为一种新型传输线具有高Q值和低辐射，在毫米波应用中有很大潜力，本文提出了一种把混合左右手传输线结构和基片集成波导结合的方法，并且研究这种结构在频扫天线中的应用．全波仿真结果验证了所提方法的有效性。     

天线馈电与馈电设备

0620153周期性结构在毫米波波导同轴转换中应用[刊,中]／周焱／／北京航空航天大学学报．-2006,32(4)．-412- 416(L)波导同轴转换连接器是微波、毫米波通信和测试中非常重要的器件。基于PBG和阶梯阻抗变换结构在导波系统中对电磁波传播性能的影响,探讨和研究了将这2种周期性结构应用在8mm波导同轴转换连接器的设计中的情况,通过在同轴腔内导体介质支撑垫中布置二维PBG结构抑制同轴部分横向溢散的电磁波,通过在波导腔体内增加阶梯阻抗结构,改善阻抗变换效率,提高波导同轴转换器件的传输性能。参10     

2003年信息科学部一处项目受理情况及分析

信息科学部一处主要支持电子科学与技术、信息理论与系统及其相关交叉领域的基础与应用基础研究。 电子科学与技术领域主要支持的研究方向有:电路与系统,电波传播理论、电磁场瞬态特性、电磁散射与逆散射、高精度高效率电磁场计算方法、电磁兼容与防护,微波毫米波器件与集成电路、新型真空器件、等离子体电子器件、高功率微波技术及应用、新型天线技术,新型电     

基于基片集成波导的硅微机械滤波器

基片集成波导(SIW)结构是在低损耗的基片上利用金属孔构成的波导结构,具有高品质因数、大功率特性和易于集成的优点,是最近微波电路研究的热点技术.滤波器是微波毫米波电路中最常用的器件,使用SIW可以实现高性能滤波器且保持体积小的优点.     

半模基片集成波导(HMSIW)三分贝功率分配器

基片集成波导(SIW)具有损耗低、性能好、易于集成等优点,作为一种新型的导波技术已经被广泛地用于微波与毫米波电路.但是对于微波低频段,基片集成波导器件的尺寸偏大.最近,一种新的导波结构--半模基片集成波导(HMSIW)被提出.与基片集成波导相比,半模基片集成波导保留了基片集成波导的优点,同时在尺寸上缩小近一半,损耗也更低.本文提出了两种结合半模基片集成波导与基片集成波导技术的三分贝功率分配器,仿真结果与实验结果一致.     

（英）钡铁氧体薄膜自偏置毫米波环行器设计与制备

基于厚度为10 μm的钡铁氧体薄膜设计,制备了共面波导结构的毫米波薄膜环行器.这种薄膜环行器不需要外加磁体,在34 GHz和37.6 GHz显示出环行特性,其非互易效应大于15 dB.结果表明,采用共面波导结构可以实现薄膜环行器.这种薄膜环行器具有和单片微波集成电路集成的潜在应用.     

Extraction of network parameters in the electromagnetic analysis ofplanar structures using the method of moments

Integration of electromagnetic (EM) and circuit analyses for the modeling of spatially distributed microwave and millimeter-wave circuits requires the establishment of ports that are defined in both the circuit and EM realms. Four EM techniques are developed here and contrasted for the extraction of the port network parameters at circuit compatible ports. A full-wave method of-moments EM analysis directly yielding network parameters of a slot-stripline-slot structure is formulated     

平面带隙结构在微波和毫米波集成电路中的应用

介绍了平面带隙结构在微波集成电路应用方面的最新进展。光子带隙(PBG)结构是具有带阻特性的周期结构,最初应用于光学领域,后来扩展到其他领域。目前从可见光到红外都有研究,在微波和毫米波频段也有应用。PBG结构可以采用金属、介质、铁磁或铁电物质植入衬底材料,或者直接由各种材料周期性排列而成。目前国内外所提出的光子带隙结构多种多样,一维和二维的平面带隙结构由于易于实现且便于集成,因而在微波毫米波集成电路中得到了广泛的应用。     

固态微波毫米波器件技术进展

固态微波毫米波半导体材料与器件、固态微波毫米波电路与模块、毫米波与太赫兹技术以及新型固态微波毫米波器件在近年来有很大的发展,在相控阵雷达、电子战、军民用通信领域有广泛的应用前景。当前这些器件应用较为集中于各类T/R组件。文章按固态微波毫米波半导体材料与器件、固态微波毫米波电路与模块、毫米波与太赫兹技术以及新型固态微波毫米波器件的顺序,概要介绍了固态微波毫米波技术的新进展。     

A Distributed Millimeter-Wave Small-Signal HBT Model Based on Electromagnetic Simulation

In this paper, a novel distributed small-signal heterojunction bipolar transistor (HBT) model at millimeter-wave frequencies is proposed. This new approach integrates the electromagnetic (EM) simulation of the outer extrinsic passive part of an HBT, the coupled transmission lines for the fingers, and the Gupta multiport connection into an efficient global distributed modeling approach. For the first time, the values of the entire HBT intrinsic model elements used in the active elementary cells (AECs) can subsequently be extracted through the explicit analytical expressions derived through the multiport connection method. Good agreement between the measured and the simulated results has been demonstrated. This model has several unique advantages for microwave transistor optimization and synthesis in that the derived explicit analytical expressions are in terms of the effect of the extrinsic parts, allowing the designer to have better control over the whole transistor design. Furthermore, it serves as one of the valuable steps toward global modeling of millimeter-wave devices and circuits.      

Hybrid integration technology of planar circuits and NRD-guide forcost-effective microwave and millimeter-wave applications

An architecture called the hybrid planar/non-radiative-dielectric (NRD) waveguide integrated technology is proposed as a building block for constructing microwave and millimeter-wave circuits. This hybrid approach of integration offers a unique possibility of exploiting inherent complementary advantages of planar structures and NRD waveguides for low-cost wireless applications while eliminating the potential drawbacks associated with both dissimilar structures. Compared to the existing NRD-guide related technology, the proposed framework consists of relocated planar structures on the top and/or the bottom plates of an NRD-guide, sharing the common ground planes. Such a hybrid scheme is particularly suitable for millimeter-wave systems in which active devices can be made with the planar-line technique while passive components can be made with the NRD-guide technique. The two subsets of a complete functional system are interconnected through a class of aperture-based transitions which can be designed to have wide-band performance. In addition, the multichip module (MCM) technique is readily achieved under this proposed scheme. Experimental prototypes, including passive-component and active-device, based on the new hybrid technology presented in this paper, show that the novel hybrid technology promises to be useful in the design of future microwave and millimeter-wave circuits and systems     

High-power microwave LDMOS transistors for wireless data transmission technologies (Review)

The fields of the application, structure, fabrication, and packaging technology of high-power microwave LDMOS transistors and the main advantages of these devices were analyzed. Basic physical parameters and some technology factors were matched for optimum device operation. Solid-state microwave electronics has been actively developed for the last 10–15 years. Simultaneously with improvement of old devices, new devices and structures are actively being adopted and developed and new semiconductor materials are being commercialized. Microwave LDMOS technology is in demand in such fields as avionics, civil and military radars, repeaters, base stations of cellular communication systems, television and broadcasting transmitters, and transceivers for high-speed wireless computer networks (promising Wi-Fi and Wi-Max standards).     

An enhanced quasi-monolithic integration technology for microwave and millimeter wave applications

A new technology for integration of high frequency active devices into low cost silicon substrate has been introduced. The novel fabrication process gives excellent advantages such as extremely low thermal resistance, and a much lower thermo-mechanical stress than the earlier quasimonolithic integration technology (QMIT) concept . This highly improves the packaging lifetime and electrical characteristics of the active devices. The fabrication process is simple and compatible with fabrication of high-Q passive elements. Successful integration of high-Q passive elements on low resistivity silicon substrate in this technology has been possible for the first time. In comparison to the earlier concept of QMIT, elimination of air-bridges in this technology not only reduces the parasitic elements but also enables the fabrication of the rest of the circuit after measuring the microwave characteristics of the embedded active devices. This makes very accurate microwave and millimeter-wave designs possible. Using the new fabrication process, microwave and millimeter-wave circuits (with both coplanar and microstrip lines) containing power devices have for the first time been possible. Furthermore, the enhanced QMIT can be considered as an organic deposited multi chip module (MCM-D), which is a potential candidate for integration an system on a package (SOP) at microwave and millimeterwave frequencies.     

基于微缩雷达应用的硅基毫米波片上天线

为研究小型化、微型化天线在现代无线应用中的集成趋势,对当前工艺水平下的毫米波段片上天线(AoC)设计进行了总结。从集成角度,对单片集成和混合集成的概念分别进行了优劣比较和讨论。作为一个单片集成技术方案的可靠候选,对硅基单片毫米波集成电路(SIMMWIC)技术进行了介绍,并给出了利用该技术实现的整流天线例子。通过单片集成的雪崩二极管发射机展示了如何利用三维电磁仿真工具设计及证明片上天线的性能,利用仿真和实际验证探讨了硅基毫米波片上天线的挑战和方法,为小型化雷达系统方案提供了一个稳固的基础。     

低耗低剖面单层波导阵列天线研究

新型单层波导阵列天线具有低耗、低剖面、结构紧凑、实用性强等诸多优点, 在毫米波甚至太赫兹无线通信领域具有巨大应用潜力, 是当前的研究热点。 文章首先介绍了用于构建波导阵列天线的几类波导馈电网络的特点, 指出E 面波导馈电网络在毫米波应用领域的优势,接着针对E 面波导在单层并馈波导阵列天线和Butler矩阵多波束阵列天线方面的研究展开叙述,最后给出了可应用在单层波导阵列天线中的开口波导辐射单元在实现多频和圆极化等不同功能上的最新研究进展。 文章对于低耗低剖面单层波导阵列天线的发展及其应用具有参考价值。     

基于界面电磁学的新型相控阵天线

界面电磁学是电磁学领域的一个前沿研究方向, 对于新型微波和天线器件设计具有重要的理论指导意义.文章对界面电磁学进行了简要介绍, 包括其发展历程、学科定位, 以及关键研究内容.还进一步提出了基于界面电磁学的相控阵天线设计新思路, 并给出了多个相控阵天线设计实例, 包括采用旋转式电磁表面的微马达相控阵、采用电调数字表面的超大口径相控阵(10 240单元)、超高频率相控阵(96 GHz)和透射式相控阵.最后介绍了新型相控阵在微波/毫米波安检成像系统中的应用, 实验结果证明了全电调快速空间成像的可行性与成像精度.