基于硅硅键合的电容式微超声波换能器设计与测试

通过测试电容值的变化来分析电容式微超声波换能器(CMUT)的发射性能。介绍了CMUT的工艺过程,关键工艺为硅硅键合。利用硅硅键合工艺制作的CMUT误差小、工艺流程简单且能进行量产。利用E4990A阻抗分析仪测试CMUT电容值得到CMUT初始电容值为680 p F,阵列内电容值一致性良好,误差为0. 62 p F,并对所设计的CMUT进行带宽测试,得出其在-6 d B时归一化带宽为200%,远远优于现有的传感器。     

基于阳极氧化铝基板的圆片级板载芯片封装技术

提出了一种新型基于阳极氧化铝基板的板载芯片（Chip on Board）封装技术。在5 wt.%,30℃的草酸电解液中采用60 V直流电压,制备了0.1 mm厚度的阳极氧化铝基板圆片,铝导线最小线宽、电阻及导线间绝缘电阻分别为35μm、小于1Ω/cm与大于1×1010Ω。在超薄阳极氧化铝基板圆片进行了双层Flash裸芯片堆叠及金丝引线键合,实现了圆片级COB封装,成品率高于93%。最后,将COB单元进行三维堆叠封装,制备了32 Gb Flash模组。因此基于阳极氧化铝基板的板载芯片封装技术具有较大的应用前景。     

基于SOI的硅微谐振式压力传感器芯片制作

采用SOI硅片,基于MEMS技术,设计并加工了一种新型三明治结构的硅微谐振式压力传感器,根据传感器敏感单元的结构设计,制定了相应的制备工艺步骤,并且针对湿法深刻蚀过程中谐振子的刻蚀保护等问题,提出了一种基于氮化硅、氧化硅和氮化硅三层薄膜的保护工艺,实验表明,在采用三层薄膜保护工艺下进行湿法刻蚀10 h后,谐振子被完全释放,三层薄膜保护工艺对要求采用湿法刻蚀镂空释放可动结构具有较高的实用价值。最后对加工完成的谐振式压力传感器进行了初步的性能测试,结果表明,在标准大气压力下谐振子的固有频率为9.932 kHz,品质因数为34。     

Low-temperature anodic bonding of silicon to silicon wafers by means of intermediate glass layers

Silicon wafers have been anodically bonded to sputtered lithium borosilicate glass layers (Itb 1060) at temperatures as low as 150–180 °C and to sputtered Corning 7740 glass layers at 400 °C. Dependent on the thickness of the glass layer and the sputtering rate, the sputtered glass layers incorporate compressive stresses which cause the wafer to bow. As a result of this bowing, no anodic bond can be established especially along the edges of the silicon wafer. Successful anodic bonding not only requires plane surfaces, but also is determined very much by the alkali concentration in the glass layer. The concentration of alkali ions as measured by EDX and SNMS depends on both the sputtering rate and the oxygen fraction in the argon process gas. In Itb 1060 layers produced at a sputtering rate of 0.2 nm/s, and in Corning 7740 layers produced at sputtering rates of 0.03 and 0.5 nm/s, respectively, the concentration of alkali ions in the glass layers was sufficiently high, at oxygen partial pressures below 10^-4 Pa, to achieve anodic bonding. High-frequency ultrasonic microanalysis allowed the bonding area to be examined non-destructively. Tensile strengths between 4 and 14 MPa were measured in subsequent destructive tensile tests of single-bonded specimens.     

基于镜像结构光子晶体的微加速度计设计

镜像结构光子晶体能够在一定范围的频带内形成单一的透射峰,受其他频率的光子影响小且易于观察。从理论结果可以看出,这种光子晶体透射率与所受的轴向应力在一定范围内呈简单的线性关系。据此,该设计以典型的单悬臂梁结构为基础设计一种新型加速度计。在单悬臂梁根部所受应力最大处,用镜像结构光子晶体替代以往的力敏电阻器,通过测出透射光强算出透射率,进而可算出加速度的值。从模态分析图中可以看到这种加速度计具有更好的稳定性和抗干扰性。     

Development of piezoelectric MEMS deformable mirror

This paper reports on piezoelectric micro-electro-mechanical systems deformable mirrors with high-density actuator array for low-voltage and high-resolution retinal imaging with adaptive optics. The deformable mirror was composed of unimorph structure of lead zirconate titanate (PZT) thin film deposited on Pt-coated silicon on insulator substrate and a diaphragm of 10?mm in diameter formed by backside-etching the Si handle wafer. 61 hexagonal electrodes were laid out on the PZT thin film for the high-density actuator array. In order to reduce the dead space for the lead lines between the electrodes and connecting pads, a polyimide layer with through holes on the electrodes was patterned as an electrical insulator. To confirm the application feasibility of the fabricated DMs, displacement profiles of the actuators were measured by a laser Doppler vibrometer. Independent applications of voltages on individual actuators were confirmed.     

基于圆片级阳极键合封装的高g_n值压阻式微加速度计

设计了一种适合于高gn值压阻式微加速度计圆片级封装的结构,解决了芯片制造工艺过程中电极通道建立、焊盘保护、精确划片等关键技术。采用玻璃—硅—玻璃三层阳极键合的方式进行圆片级封装,较好地解决了芯片密封性、小型化和批量化等生产难题。在4 in生产线上制作的高gn值压阻式微加速度计样品,尺寸仅为1 mm×1 mm×0.8 mm;对传感器进行的校准与抗冲击性能测试,结果表明:样品具备105gn的抗冲击能力、0.15μV/gn/V的灵敏度以及200 kHz的谐振频率。     

A heuristic approach for actuator layout designs in deformable mirror devices based on current value optimization

Structural and Multidisciplinary Optimization - Deformable mirrors are vital components in fundus imaging modality incorporating adaptive optics systems. The application of precisely controlled...     

A simple approach to fabricate multi-layer glass microfluidic chips based on laser processing and thermocompression bonding

Microfluidics and Nanofluidics - We study the influence of variations of cross-section on the drying dynamics by pervaporation in microfluidic channels surrounded by water-permeable...     

Anodic bonding of glass to aluminium

Anodic bonding of glass to aluminium may provide a higher degree of freedom in device design. In this paper, a systematic variation of the bonding parameters for the aluminium–glass bond is presented. Hermetic seals with strengths of 18.0 MPa can be achieved using a 50–100-nm-thick bonding aluminium layer, and bonding at 300–400°C applying a voltage of 1,000–1,500 V for 20 min. With these parameters, bond yields above 95.1% were obtained on 17 wafers. The bonds survived extensive thermal ageing without significant degradation. The possibility of bonding glass to an aluminium layer with buried, electrically isolated conductors underneath is also demonstrated.     

Steady-state measurement of wafer bonding cracking resistance

A steady-state wedge-opening test has been developed in order to measure the fracture toughness of bonded silicon wafers. Comparison between non-steady-state and steady-state tests is performed. The importance of allowing the rotation of the testing stage is discussed and appears to be essential in order to have the wedge perfectly aligned with the sample. Significant influence of (1) surface treatment; (2) thermal annealing; and (3) crack velocity on the toughness is observed for Si/Si wafer bonding and related to the interface chemistry.     

Low-temperature wafer bonding: a study of void formation and influence on bonding strength

The void formation has been systematically observed for low-temperature (120/spl deg/C and 400/spl deg/C) Si-Si and SiO/sub 2/-SiO/sub 2/ wafer bonding techniques in function of the annealing time (from 70 to 595 h), pressure (low vacuum and atmospheric) and surface pretreatments. Mixed solution (H/sub 2/SO/sub 4/ and H/sub 2/O/sub 2/) standard cleaning, warm nitric acid and O/sub 2/-plasma-assisted surface pretreatments have been considered and compared. The void formation is clarified according to the void distribution and the measurement of surface energy. Long annealing time periods are considered in order to reach the saturation of the interface chemical reactions. Our experiments demonstrate that the origin of voids appearing in low temperature O/sub 2/-plasma-enhanced wafer bonding is related to the great quantity of chemical reaction products. It has been shown that optimized O/sub 2/-plasma pretreatment time can lead to void-free, uniform and high surface energy (over 2.0 J/m/sup 2/) wafer bonding. In the case of SiO/sub 2/-SiO/sub 2/ wafer bonding, our experimental results show that below a certain critical silicon dioxide thickness the reaction products cannot be absorbed totally and then voids occur. Presenting a higher surface energy than warm nitric acid O/sub 2/-plasma is an extremely promising surface pretreatment solution for the increasing demand of low-temperature wafer bonding techniques.     

Manufacture of microfluidic glass chips by deep plasma etching, femtosecond laser ablation, and anodic bonding

Two dry subtractive techniques for the fabrication of microchannels in borosilicate glass were investigated, plasma etching and laser ablation. Inductively coupled plasma reactive ion etching was carried out in a fluorine plasma (C₄F₈/O₂) using an electroplated Ni mask. Depth up to 100 μm with a profile angle of 83°–88° and a smooth bottom of the etched structure (Ra below 3 nm) were achieved at an etch rate of 0.9 μm/min. An ultrashort pulse Ti:sapphire laser operating at the wavelength of 800 nm and 5 kHz repetition rate was used for micromachining. Channels of 100 μm width and 140 μm height with a profile angle of 80–85° were obtained in 3 min using an average power of 160 mW and a pulse duration of 120 fs. A novel process for glass–glass anodic bonding using a conductive interlayer of Si/Al/Si has been developed to seal microfluidic components with good optical transparency using a relatively low temperature (350°C).     

基于可变形卷积的服装检索方法

传统的服装检索方法使用固定形状的感受野,当服装目标存在几何变形时无法有效地提取其特征。针对这个问题,提出基于可变形卷积和相似性学习的服装检索方法。首先,构建可变形卷积网络,自动学习服装特征的采样位置和服装图像的哈希编码;然后,级联相似性学习网络,度量哈希编码的相似性;最后,根据相似性评分产生检索结果。实验结果表明,该方法能够有效地提取存在几何变形的服装目标的特征,从而减少了图像背景特征的干扰,提高了检索模型的准确率。     

两电极多层阳极键合实验研究

介绍了用2个电极通过一次电极反接的方式实现多层样片之间阳极键合的操作工艺和键合机理,并以玻璃-硅-玻璃三层结构为例对其进行了实验研究。结果显示：多余的玻璃对第一次键合过程的电流特性影响不大,而第一次键合的玻璃对第二次键合电流产生显著的影响,电流出现不规则的突变。而且,在第二次键合过程中,第一次键合的玻璃在键合面上会出现由于钠元素积聚而产生的黄褐色斑点。拉伸强度实验的结果表明：第二次键合过程中在第一次键合面形成的反向电压会减弱键合的强度;通过合理选择键合参数可以得到满足MEMS封装要求的键合强度。     

复合量程加速度计阳极键合残余应力研究

复合量程加速度计阳极键合过程中产生的残余热应力会引起加速度计的零位失调,也是导致加速度计失效的原因之一。对键合过程中产生的残余热应力进行了研究,仿真并分析了残余热应力与键合温度、玻璃基底厚度和框架键合宽度的影响,确定了适合复合量程加速度计的最佳键合宽度和玻璃基底厚度。     

Characteristics of ACPDP test panels with aluminum fence electrode formed via anodic bonding with soda‐lime glass

Abstract— In an attempt to reduce materials and processing costs of ACPDPs, aluminum fence electrodes were prepared on soda‐lime glass substrates by chemically etching aluminum foil bonded directly onto the substrate via an anodic‐bonding process. Several different fence‐electrode patterns were designed and coated either with a glass dielectric layer or with an anodic aluminum oxide layer. Firing voltages, operation margin, luminance, and luminous efficiency of such test panels were evaluated. The results indicated that the performance of test panels with aluminum fence electrodes is comparable with conventional test panels with ITO/Ag electrodes, demonstrating the possibility of a dramatic reduction in the costs of ACPDPs.