Effects of electron-and impurity-ion-LO phonon couples on the impurity states in cylindrical quantum wires

The variational method and the effective mass approximation are used to calculate the phonon effects on the hydrogenic impurity states in a cylindrical quantum wire with finite deep potential by taking both the couplings of the electron-confined bulk longitudinal optical（LO） phonons and the impurity-ion-LO phonons into account.The binding energies and the phonon contributions are calculated as functions of the transverse dimension of the quantum wire.The results show that the polaronic effect induced by the electron-LO phonon coupling and the screening effect induced by the impurity-ion-LO phonon coupling tend to compensate each other and the total effects reduce the impurity binding energies.     

台阶量子阱的结构和电场对Rashba自旋分裂的影响

Spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-xAs/Al0.3Ga0.7As step quantum wells induced by interface and electric field related Rashba effects is investigated theoretically by the method of finite difference.The dependence of the spin splitting on the electric field and the well structure,which is controlled by the well width and the step width,is investigated in detail.Without an external electric field,the spin splitting is induced by an interface related Rashba term due to the built-in structure inversion asymmetry.Applying the external electric field to the step QW,the Rashba effect can be enhanced or weakened,depending on the well structure as well as the direction and the magnitude of the electric field.The spin splitting is mainly controlled by the interface related Rashba term under a negative and a stronger positive electric field,and the contribution of the electric field related Rashba term dominates in a small range of a weaker positive electric field.A method to determine the interface parameter is proposed.The results show that the step QWs might be used as spin switches.     

Numerical analysis of centered-inclined coupling slots in rectangular waveguides

Numerical analysis is presented for the characteristic parameters of centered-inclined coupling slot in rectangular waveguides,taking into account the transverse distribution of the electric field across the slot aperture.Integral equations are formulated based on dyadic Green＇s function theories and solved using the method of moments.Trigonometric basis functions are adopted.It is found that the method will converge with up to ten basis functions.The characteristic parameters can be easily obtained for different slot sizes.Resonant length and resonant resistance of the coupling slots are calculated.It is shown that the calculated results have very high accuracy,compared with simulated results obtained from commercial software.Therefore,it can be effectively applied in the synthesis of antenna arrays.Effects of the transverse distribution on calculating resonant parameters of the coupling slot are also analyzed.The results show that if the transverse distribution of the electric field is neglected,the calculated error tends to become larger when the slot gets wider or thinner.     

EFFECT OF A WEAK LONGITUDINAL ELECTRIC FIELD ON WHISTLER WAVES

The effect of a longitudinal electric field on whistler waves is studied based onkinetic theory.A local Maxwellian distribution is taken as stationary distribution function ofelectrons which departs from thermodynamic equilibrium due to the applied electric field.Thedielectric tensor is derived by integrating along orbit of the particle in the unperturbed field.Dispersion relation and growth rate are analysed from Hermitian and anti-Hermitian parts ofthis tensor respectively.It is found that the waves are growing when the angle between the wavevector and the electric field is in range of θ<2θ_c, otherwise the whistler waves are damping.Thegrowth rate increases with wave frequency and decreases with the angle between the wave vectorand the applied field.In the case of ω_e(?)Ω the maximum of growth rate,which is at θ=O_l isproportional to the plasma density and anti-proportional to the magnetic field.Some computedresults for parameters at top of the F layer are given.     

A novel coupled quantum well with large negative electro-refractive index change and low absorption loss

In order to solve excessive insertion loss and low on/off ratio in quantum well reflection-type waveguide optical switches, a novel InGaAs/InAlAs coupled quantum well structure is proposed. In the case of low applied electric field （F=19 kV/cm） and low absorption loss （ et ~ 61.2 cm-1）, a large negative field-induced refractive index change （ A n=-0.0134） is obtained in the novel coupled quantum well structure at the operating wavelength （ 2 =1550 rim）. The value is larger by over one to two order of maL, nitude comoared to that in a rectanaular ouantum well （ROW） on the above same work conditions.     

Nonlinear Optical Response of Conjugated Polymer to Electric Field

The organic π-conjugated polymers are of major interest materials for the use in electro-optical and nonlinear optical devices. In this work, for a selected polyacetylene chain, the optical absorption spectra in UV/Vis regime as well as the linear polarizabilitiy and nonlinear hyperpolarizability are calculated by using quantum chemical ab initio and semiempirical methods. The relationship of its optical property to electric field is obtained. Some physical mechanism of electric field effect on molecular optical property is discussed by means of electron distribution and intramolecular charge transfer.     

Influence of Disassociation Probability on External Quantum Efficiency in Organic Electrophosphorescent Devices

An analytical model is presented to calculate the disassociation probability and the external quantum efficiency at high field in doped organic electrophosphorescence（EPH） devices. The charge recombination process and the triplet（T）-triplet（T） annihilation processes are taken into account in this model. The influences of applied voltage and the thickness of the device on the disassociation probability, and of current density and the thickness of the device on the external quantum efficiency are studied thoroughly by including and ignoring the disassociation of excitons. It is found that the dissociation probability of excitons will come close to 1 at high electric field, and the external EPH quantum efficiency is almost the same at low electric field. There is a large discrepancy of the external EPH quantum efficiency at high electric field for including or ignoring the disassociation of excitons.     

Magnetopolaron effects on the optical absorptions in a parabolic quantum dot

We investigate the influence of magnetic field on the linear and nonlinear optical absorptions in a parabolic quantum dot (QD) through electron-LO-phonon interaction by using the Lee-Low-Pines-Huybrecht variational calculation for all coupling strengths. We apply our calculations to GaAs which is a good candidate in Ⅲ-V group semiconductors. We find that all the absorption spectra are strongly affected by the electron-LO-phonon interaction, the applied magnetic field, and the Coulomb binding potential. Furthermore, due to the Zeeman splitting, the response of all the absorption values in transition (+1→0) and (-1→0) closely depends on the magnetic field increasing.     

Study on electro-optic properties of two-dimensional PLZT photonic crystal band structure

The band characteristics of two-dimensional(2D) lead lanthanum zirconate titanate(PLZT) photonic crystals are analyzed by finite element method.The electro-optic effect of PLZT can cause the refractive index change when it is imposed by the applied electric field,and the band structure of 2D photonic crystals based on PLZT varies accordingly.The effect of the applied electric field on the structural characteristics of the first and second band gaps in 2D PLZT photonic crystals is analyzed in detail.And the results show that for each band gap,the variations of start wavelength,cut-off wavelength and bandwidth are proportional to quadratic of the electric field.     

应变纤锌矿ZnO/MgxZn1-xO量子点中离子施主束缚激子的光学性质

Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.     

1.55 μm InGaAs-InP Quantum Wire Optical Modulators: Optimization of Wire Width to Maximize Absorption and Index of Refraction Changes Due to Excitonic Transitions

Quantum wire/dot modulators offer superior performance over their quantum counterpart due to enhanced excitonic binding energy. This paper presents simulations on InGaAs-InP quantum wire Stark effect optical modulators showing a novel trend. While the excitonic binding energies and absorption coefficients increase as the width of the wire is decreased, the refractive index change Δn is maximized at a wire width depending on the magnitude of the applied electric field. For example, Δn is maximized at a width of about 100Å for an external electric field of 120kV/cm in an InGaAs quantum wire. This behavior is explained by considering the opposing effects of the wire width on binding energy and changes in the electron-hole overlap function in the presence of an external electric field. Practical InGaAs-InP modulators using V-groove structures are also presented.     

Energy levels of a quantum ring in a lateral electric field

The electronic states of a semiconductor quantum ring (QR) under an applied lateral electric field are theoretically investigated and compared with those of a quantum disk of the same size. The eigenstates and eigenvalues of the Hamiltonian are obtained from a direct matrix diagonalization scheme. Numerical calculations are performed for a hard-wall confinement potential and the electronic states are obtained as a function of the electric field and the ratio r₂/r₁, where r₂ (r₁) is the outer (inner) radius of the ring. The effects of decreasing symmetry and mixing on the energy levels and wave functions due to the applied electric field are also studied. The direct optical absorption are reported as a function of the electric field.     

Theory of refractive index variation in quantum well structure andrelated intersectional optical switch

Attention is focused on the deformation of electron wave functions due to an applied field in a quantum well (QW) neglecting the exciton effect. Compared to the electrooptic effect of bulk semiconductor, the theoretical refractive index variation in a QW structure due to this phenomenon is considerably larger at the wavelength corresponding to the energy gap between the first quantized energy levels in the conduction and valence bands. Since the absorption loss changes by the same mechanism, the appropriate wavelength region is estimated for larger index variation where the absorption loss is relatively smaller. The design of a related intersectional optical switch of a small size is discussed. A switch with a length of about 10 μm is achievable with an intersectional angle of more than 10° at a waveguide width of 1 μm. This optical switch is expected to be of high speed and is integrable monolithically with lasers     

Absorption of electromagnetic radiation in a quantum wire with an anisotropic parabolic potential in a transverse magnetic field

An analytical expression for the coefficient of absorption of electromagnetic radiation by electrons in a quantum wire in a magnetic field is derived. The case of a magnetic field transverse with respect to the wire axis is considered. The resonance character of absorption is shown, and the resonance frequencies as functions of the field are determined. The effect of the scattering of electrons at optical phonons is studied, and it is shown that scattering is responsible for additional resonance absorption peaks.     

Modulation of intersubband absorption in tunnel-coupled quantum wells in electric fields

Modulation of absorption of middle-infrared radiation in double tunneling-coupled quantum wells in longitudinal electric fields is studied. A specific feature of the quantum wells is the small separation in energy between the two lower levels. As a consequence, the levels may exhibit “anticrossing” even in low transverse electric fields. An interpretation of the change in intersubband absorption is suggested. The interpretation is based on the assumption that a transverse electric-field component may appear in the structure. The change in the absorption coefficient is calculated taking into account the redistribution of electrons between size-quantization subbands and the changes in the temperature of electrons in the subbands in the longitudinal electric field, as well as the changes in the optical matrix elements, the energies of transitions, and the concentrations of electrons in the subbands in the transverse electric field. The possibility of using the structure for the efficient modulation of middle-infrared light with the photon energy 136 meV is shown.     

Electroabsorption and electrooptic effect in SiGe-Si quantum wells:realization of low-voltage optical modulators

We have calculated the behavior of the band-to-band absorption coefficient in square, coupled, and graded bandgap Si_0.6Ge _0.4-Si quantum wells as a function of the transverse electric field. It is seen that due to the weak confinement of the electrons (ΔE_c⩽20 meV) the absorption of photons with energy equal to the interband transition energy can be reduced at very small values of the transverse electric field. This phenomenon lends itself to the design of efficient amplitude modulators. In addition, the resulting change in the refractive index is also large and the corresponding linear electrooptic coefficient is calculated to be as large as 1.9×10^-10 m/V in square wells. This effect could prove to be the basis for the realization of efficient Si-based electrooptic modulators. Device designs are discussed     

电场驱动HgCdTe/CdTe量子阱拓扑相变引起的光吸收增强研究

HgTe/CdTe量子阱是研究拓扑绝缘体新奇物性的一个很好载体。采用Kane八带k·p模型,对电场驱动Hg1-xCdxTe/CdTe量子阱拓扑相变及其相变前后的光吸收性质进行了研究,并使用BHZ模型对吸收系数进行了解析计算和分析。结果表明:在电场能够驱动Hg1-xCdxTe/CdTe量子阱拓扑相变后继续增大电场,其能带可变为墨西哥帽形状,联合态密度将会增强,导致光吸收相比于无电场时显著增强,与解析计算结果相吻合。对于平行界面偏振光(TE)吸收曲线在带边还形成了双峰结构。文章结果可用于新型红外光电探测器、激光器以及频率选择器等量子阱器件的研究和设计。     

Electron-phonon interaction within an unbiased and biased quantumwell

This paper addresses the electron-phonon interaction when a perpendicular electric field is applied across a quantum well (QW). An applied perpendicular electric field redistributes the one-dimensional density of states in position and energy within a QW. The redistribution of the one-dimensional density of states modifies the calculation of the initial and final states in the electron-phonon interaction. The overall result is to increase the scattering rate between the electrons and phonons while adding additional characteristics to the shape of the phonon scattering time     

SPPs激射中Airy表面等离子的特性分析

为了研究表面等离子体(SPPs)传播产生的Airy等离子的特性,分析和仿真了Airy等离子的独特性质。利用SPPs的激射原理,对Airy等离子的本征态进行了理论分析,研究了光栅耦合SPPs的激射结构中Airy等离子的性质。结果表明:无衍射的Airy表面等离子不仅具有在近场能量放大和快速传播的特性,而且还能利用其特性控制光束的传播;Airy表面等离子只有在一定宽度下与光激发的相互作用才能抑制能量损耗,在基质宽度小于600 nm左右时无法出现显著的Airy表面等离子;不同宽度的基质条件下激射能量与产生Airy离子的趋势一致;Airy表面等离子在激发能量较小时就能实现快速传播,在2.3 eV作用时能量的增加对Airy的等离子的作用不再明显。这一研究对于SPPs的强局域化应用实现、表面光学处理和线性控制无衍射SP光学产生了积极的作用。     

Theoretical studies of optical modulation in lattice matched and strained quantum wells due to transverse electric fields

Electrooptical modulators based on quantum well structures have become an important area of research due to potential applications in high-speed optical modulation and image processing. In this paper, we examine the physics of a quantum well modulator within the generalized Kohn-Luttinger Hamiltonian. Issues of importance for the modulator structure are the excitonic absorption shift, exciton binding energy, line broadening, tunneling rates for electrons and holes in the presence of a transverse electric field, and changes in optical absorption coefficients as a function of electric field. A formalism to study these effects for both lattice matched and nonlattice matched quantum well structures is provided and the potential of material tailoring for specific optical response is discussed. It is shown that the reliability of this technology is critically related to the fabrication of high-quality interfaces and alloys since even a one-monolayer variation in quantum well size can have a substantial effect on the modulation properties.