平面光波导膜层厚度对传播损耗的影响

根据平面光波导损耗的波动理论，通过分析计算，对于传播损耗随波膜厚度的变化关系提出了新的看法，文中给出了一组以波导膜厚度为参变量的传播损耗曲线，说明在某些波导膜厚度范围内，不能有效地进行光波导传播。     

LiNbO_3条波导的光损伤

报道了利用ＣＣＤ测试ＬｉＮｂＯ３条波导光损伤的实验结果。发现各种传向都存在不同程度的光损伤。加热可大部分消除光损伤，掺入ＭｇＯ也可提高条波导的抗光损伤性能。     

平面光波导器件的发展

在光电子技术,计算机技术,通信技术迅速发展的今天,光波导材料和器件得到了越来越多的应用和发展.因此,对于光波导器件现状及发展趋势的叙述,不但对有志于在此方面研究的人具有一定参考价值,同时也是面向未来光电子产业发展的必然要求.因为当今大多器件应用平面光波导材料,所以主要对平面光波导理论进行了讨论.     

平面光波导与光纤的低损耗耦合

文章提出一种新型的波导结构,该结构通过改变波导芯在宽度和长度方向的截面形状和大小,借此来改变波导中光束的模场分布,有效地降低了波导与光纤间的耦合损耗,提高了产品性能。此外,该波导结构生产制造相对简单,易于大规模生产。     

平面光波导分路器温度特性研究

通过对光无源器件中的平面光波导分路器生产过程中预先对使用的尾纤保护管进行收缩处理及产品结构设计考虑尾纤保护管的收缩后,在高低温循环试验中的温度特性研究,给平面光波导分路器设计及生产提供一种新的方向。     

LiNbO_3平面光波导透镜阵列的研制

本文报道我们用钛扩散和质子交换技术在LiNbO_3衬底上制备的平面光波导透镜阵列的实验结果.设计的平面透镜阵列由3个并排的平面透镜组成,每个透镜的焦距是15mm,通光孔径是4.68mm,制成的器件用棱镜耦合器进行了测量,测量值与设计值     

Nd：MgO：LiNbO_3光波导的特性

用质子交换法制备了Ｎｄ：ＭｇＯ：ＬｉＮｂＯ３波导。通过测量平面波导的二次离子质谱，得到了波导的原子组分分布，并测量了Ｎｄ：ＭｇＯ：ＬｉＮｂＯ３晶体的吸收谱线，最后利用端面耦合，分别得到了条波导内和衬底内激光诱导的荧光谱线。     

SOI光波导传输机理及其损耗的研究

分析研究了ＳＯＩ光波导传输机理，并对其传输损耗进行了计算。     

铌酸锂光波导制作工艺进展

文章综述了几种常用的铌酸锂波导的制作工艺,包括表面外扩散、金属内扩散、离子交换和质子交换,并分析、比较和总结了在不同工艺制作的条件下对铌酸锂光波导的性能造成的不同影响。目前,获得高质量光波导的主要途径是Ti扩散和质子交换。同时,文章对逐渐建立起的铌酸锂波导光学特性和结构特性之间的理论关系也进行了介绍。     

钛扩散LiNbO_3晶体光波导长周期光栅

设计了一种钛扩散铌酸锂(LiNbO_3)晶体光波导结构,并在该基础上制作了长周期光栅.使用两步钛扩散方法在Z切LiNbO_3基片上制造了波导,它包括一个单模芯层和一个平面包层,之后用光刻胶光栅置于波导表面.实验证明用这种结构设计长周期波导光栅是可行的.对光波导制造工艺和波导结构的深入研究,为制作高速电光调制型光栅提供技术基础.     

Analysis of titanium diffused planar optical waveguides in lithium niobate

Characteristics of titanium indiffused waveguides in lithium niobate have been investigated. The effects of diffusion time, temperature, and ambient atmosphere on mode structure, surface refractive index, and profile, waveguide depth, surface morphology, and composition are described. Similarities and discrepancies between these and any previously published results are discussed and mechanisms for new features proposed. The necessity for fabrication in an oxygen atmosphere at elevated temperatures is demonstrated, and directions for further investigation indicated.     

掺铁铌酸锂晶体中光损伤的暗衰减效应

为了研究铌酸锂晶体中的光损伤,着重对掺铁铌酸锂晶体中光损伤的暗衰减效应进行研究,发现在薄样品中光损伤的暗衰减时间远大于在厚样品中的暗衰减时间,利用红外吸收光谱和喇曼光谱对这个现象的潜在机理进行了初步分析,综合几个实验结果发现,晶体厚度对光损伤的暗衰减是一个重要的影响因素.     

Si基槽型光波导的传输特性分析和传输损耗的测量

对Si基槽型(slot)光波导的传输特性进行了研究。 采用三 维时域有限差分(3D-FDTD)法研究了芯层中的光功率与波导槽型宽度及Si条带宽度之间的关 系,结果显示,槽型光波导具有很好的光功率约束效率,可以达到30%以上; 分析了光功率的变化规律及其优化,综合考虑光功率和光功率密度确定波导结构参数,实现 最佳光功率分 布,横向光功率分布沿x轴方向具有很好的约束效果,沿y轴方向呈现高斯分布;分析了底部Si薄层对光 功率的影响,100nm的底部Si薄层使得芯层的光功率下降50%,减小 底部Si薄层厚度有利于光功率约束效 率的提高;采用电子束刻写(EBL)技术和等离子刻蚀(ICP)技术制备了Si基槽型光波导,实验 研究了其传输损耗,结果显示,槽型光波导具有较低的传输损耗,达到13.5dB/cm。     

椭圆光波导和圆形光波导单模传输分析比较

文章利用入射线偏振光在柱坐标系下对椭圆光波导进行了严格求解,得到了模场的精确解析解,导出了模式特征方程.光只在长轴方向的子午面内单模传播时,即可实现单模单偏振传输.在给定相同条件下单模传输时,与圆形光波导相比,椭圆光波导传播常数变化很小.文章还简要分析了波长、椭圆率和相对折射率差对传播常数的影响.     

Wet-etched ridge waveguides in y-cut lithium niobate

By the technique of nickel indiffusion proton exchange (NIPE) and the technique of buffered proton exchange (PE) melt, wet-etched ridge waveguides in y-cut LiNbO₃ are fabricated for the first time. The fabricated ridge waveguides have smooth surfaces and are good enough for low-loss waveguides. Moreover, a ridge waveguide Mach-Zehnder modulator in y-cut LiNbO₃ is fabricated. The measured half-wave voltage is about 30% lower than that of a conventional modulator. The wet-etched ridge waveguides in y-cut and z-cut substrates are also characterized for comparison     

Electric-field-assisted proton-exchanged optical waveguides in lithium niobate

We describe the fabrication of a broad stripe optical wave-guide in z-cut lithium niobate by electric-field-assisted thermal proton exchange in a benzoic acid melt. Electric fields of 5 × 104V/m to 105V/m were laterally applied by means of in-contact gold thin-film electrodes 1 mm apart, producing an asymmetric depth across the width of the stripe. Similar vertical fields, applied across the thickness of the wafer, increased the stripe depth in the region of applied field. Refractive index profiles are given for both cases.     

Proton-exchanged optical waveguides in Y-cut lithium niobate

The fabrication of proton exchanged monomode optical waveguides on Y-cut lithium niobate is reported. Molten benzoic acid is used, but damage of the crystal surface is avoided.     

Optical transmission losses in polycrystalline silicon strip waveguides: Effects of waveguide dimensions, thermal treatment, hydrogen passivation, and wavelength

Signal propagation delays dominate over gate delays in the ever-shrinking ultra large scale integrated (ULSI) circuits. Consequently, silicon-based monolithic optoelectronic circuits (SMOE) with their light speed signal propagation can provide unique advantages for future generations of microprocessors. For such SMOE circuits, we need optical interconnects compatible with silicon technology. Strip waveguides consisting of polycrystalline silicon (polySi) clad with SiO₂ offer excellent optical confinement and ease of fabrication that are ideal for such interconnect applications. One major challenge with using this material system, however, is its insertion loss. In this paper we provide techniques for minimizing optical transmission losses in polySi strip waveguides. Our previous work using polySi strip waveguides, showed an optical transmission loss of 15 dB/cm at λ=1.55 μm, which is a communication wavelength of choice in optical fibers because it represents an absorption minimum. Similar measurements in crystalline silicon strip waveguides¹ yielded transmission losses of less than 1 dB/cm. Hitherto, in decreasing loss from 77 dB/cm to 15 dB/cm, we had minimized loss from surface scattering by improving the film surface morphology, and decreased bulk absorption with hydrogen passivation. In this paper we report a further reduction in the residual bulk loss from 15 dB/cm to 9 dB/cm. By experimenting with different waveguide core dimensions, we find that the contribution of bulk loss towards net transmission loss decreases with waveguide core thickness. Additionally, high temperature treatment provides strain relief in the polySi, decreasing transmission loss. Annealing in an oxygen ambient is not recommended because it always increases transmission loss. Hydrogen passivation improves transmission, attributable to passivation of light-absorbing dangling bond defect sites present at polySi grain boundaries. Together, these methods have resulted in the lowest measured loss value of 9 dB/cm at λ=1.55 μm. Since integrated SiGe and Ge photodetectors are more efficient at shorter wavelengths like λ=1.32 μm, transmission loss is also measured at λ=1.32 μm. Losses at the two wavelengths (1.32 μm and 1.55 μm) are similar when defects and stress in the waveguides are minimized.