Microwave dielectric properties of CeO2–0.5AO–0.5TiO2 (A = Ca,Mg, Zn,Mn, Co,Ni, W) ceramics

Microwave dielectric ceramic materials based on cerium [CeO₂–0.5AO–0.5TiO₂ (A = Mg, Zn, Ca, Mn, Co, Ni, W)] have been prepared by a conventional solid state ceramic route. The crystal structure was studied by X-ray diffraction, microstructure by scanning electron microscopy (SEM) techniques and the phase composition was studied using energy dispersive X-ray analysis (EDXA). The sintered ceramics had a relative dielectric constant (ɛ_r) in the range 17–65 and quality factor Q_uxf up to 50,000 GHz and a temperature variation of resonant frequency (τ_f) ranging from a negative value (−62 ppm/°C) to a high positive value (+399 ppm/°C). The majority of the synthesized ceramics were of a two phase composite consisting of a fluorite CeO₂ and perovskite ATiO₃ phase. The microwave dielectric properties were further tailored by adding various amounts of dopants of different valencies to the calcined powder. This made it possible to either tune τ_f to zero or improved the quality factor further.     

Effect of B2O3 on the sintering and microwave dielectric properties of M-phase LiNb0.6Ti0.5O3 ceramics

The effect of B₂O₃ addition on the sintering, microstructure and the microwave dielectric properties of LiNb_0.6Ti_0.5O₃ ceramics have been investigated. It is found that low-level doping of B₂O₃ (≤2 wt.%) can significantly improve the densification and dielectric properties of LiNb_0.6Ti_0.5O₃ ceramics. Due to the liquid phase effect of B₂O₃ addition, LiNb_0.6Ti_0.5O₃ ceramics could be sintered to a theoretical density higher than 95% even at 880 °C. No secondary phase was observed for the B₂O₃-doped ceramics. There is no obvious degradation in dielectric properties for the ceramics with B₂O₃ additions. In the case of 1 wt.% B₂O₃ addition, the ceramics sintered at 880 °C show good microwave dielectric properties of ɛ_r = 70, Q × f = 5400 GHz, τ_f = −6.39 ppm/°C. It represents that the ceramics could be promising for multilayer low-temperature co-fired ceramics (LTCC) applications.     

Microstructure and microwave dielectric properties of BaLa4Ti4O15 ceramics with template particles

BaLa₄Ti₄O₁₅ (BLT) ceramic has excellent microwave dielectric properties with high dielectric constant (ɛ_r) and high quality factor (Q × f). However, BLT has the negative temperature dependence of resonant frequency (τ_f). In this study, single phase and plate-like BLT particles were prepared via a molten salt synthesis using NaCl, KCl and NaCl–KCl flux. Plate-like BLT template particles mixed with powders synthesized by solid-state reaction were uniaxially pressed and sintered. Sintered ceramics with template particles showed anisotropy in the microstructure and the crystalline phase. In the microwave dielectric properties, τ_f and ɛ_r increased with an increasing amount of template particles, and Q × f were nearly equal to that of specimens without template particles.     

Microwave dielectric characteristics of SrLaGaO4 and SrNdGaO4 ceramics

SrLnGaO₄ (Ln = La and Nd) ceramics with K₂NiF₄ structure were prepared by solid-state reaction approach, and the microwave dielectric properties and microstructures were characterized. The SrLaGaO₄ and SrNdGaO₄ ceramics with minor secondary phase, Sr₃Ga₂O₆, were obtained by sintering at 1250–1350 °C for 3 h, and good microwave dielectric characteristics were achieved: the ceramics had (1) ɛ = 20.3, Q × f = 16,219 GHz, and τ_f = −33.5 ppm/°C for SrLaGaO₄; and (2) ɛ = 21.4, Q × f = 16,650 GHz, and τ_f = 7.1 ppm/°C for SrNdGaO₄.     

Microwave dielectric properties and low-temperature sintering of Ba3Ti4Nb4O21 ceramics with B2O3 and CuO additions

The low sintering temperature and the good dielectric properties such as high dielectric constant (ɛ_r), high quality factor (Q × f) and small temperature coefficient of resonant frequency (τ_f) are required for the application of chip passive components in the wireless communication technologies. In the present study, the sintering behaviors and dielectric properties of Ba₃Ti₄Nb₄O₂₁ ceramics were investigated as a function of B₂O₃–CuO content. Ba₃Ti₄Nb₄O₂₁ ceramics with B₂O₃ or CuO addition could be sintered above 1100 °C. However, the additions of both B₂O₃ and CuO successfully reduced the sintering temperature of Ba₃Ti₄Nb₄O₂₁ ceramics from 1350 to 900 °C without detriment to the microwave dielectric properties. From the X-ray diffraction (XRD) studies, the sintering behaviors and the microwave dielectric properties of low-fired Ba₃Ti₄Nb₄O₂₁ ceramics were examined and discussed in the formation of the secondary phases. The Ba₃Ti₄Nb₄O₂₁ sample with 1 wt% B₂O₃ and 3 wt% CuO addition, sintered at 900 °C for 2 h, had the good dielectric properties: ɛ_r = 65, Q × f = 16,000 GHz and τ_f = 101 ppm/°C.     

Microwave dielectric properties of La3Ti2TaO11 ceramics with perovskite-like layered structure

The first characterization of the microwave dielectric properties of the La₃Ti₂TaO₁₁ ceramics is presented. An ordinarily sintered ceramic at 1560 °C exhibits good microwave dielectric properties with ?_r = 46, Q × f = 7500 GHz and τ_f = ?47 ppm/°C. An alternative approach to tailor the temperature coefficient of resonate frequency of La₃Ti₂TaO₁₁ ceramics is also presented. Textured La₃Ti₂TaO₁₁ ceramics were fabricated using spark plasma sintering (SPS). By controlling the sintering temperature, orientation degree increased together with the steadily increase in ?_r and Q × f. A noteworthy change in τ_f from ?43.1 ppm/°C to ?13.6 ppm/°C with increasing orientation degree was observed. These results suggest that grain-orientation control was an effective way to tailor the microwave dielectric properties of La₃Ti₂TaO₁₁ ceramics.     

Microwave dielectric properties of Re3Ga5O12 (Re: Nd,Sm, Eu,Dy and Yb) ceramics and effect of TiO2 on the microwave dielectric properties of Sm3Ga5O12 ceramics

Re₃Ga₅O₁₂ (Re: Nd, Sm, Eu, Dy and Yb) garnet ceramics sintered at 1350–1500 °C had a high quality factor (Q × f) ranging from 40,000 to 192,173 GHz and a low dielectric constant (ɛ_r) of between 11.5 and 12.5. They also exhibited a relatively stable temperature coefficient of resonant frequency (τ_f) in the range of −33.7 to −12.4 ppm/°C. In order to tailor the τ_f value, TiO₂ was added to the Sm₃Ga₅O₁₂ ceramics, which exhibited good microwave dielectric properties. The relative density and grain size increased with addition of TiO₂, resulting in the enhancement of Q × f value. The τ_f increased with the addition of TiO₂. Excellent microwave dielectric properties of ɛ_r = 12.4, Q × f = 240,000 GHz and τ_f = −16.1 ppm/°C were obtained from the Sm₃Ga₅O₁₂ ceramics sintered at 1450 °C for 6 h with 1.0 mol% TiO₂. Therefore, Re₃Ga₅O₁₂ ceramics, especially TiO₂-added Sm₃Ga₅O₁₂ ceramics are good candidates for advanced substrate materials in microwave integrated circuits (MICs) applications.     

Characterization and dielectric behavior of willemite and TiO2-doped willemite ceramics at millimeter-wave frequency

Willemite ceramics (Zn₂SiO₄) have been successfully prepared in the temperature range from 1280 to 1340 °C. It is found that willemite ceramics possess excellent millimeter-wave dielectric properties: a dielectric constant ɛ_r value of 6.6, a quality factor Q × f value of 219,000 GHz and a temperature coefficient of resonant frequency τ_f value of −61 ppm/°C. By adding TiO₂ with large positive τ_f value (450 ppm/°C), near zero τ_f value can be achieved in a wide sintering temperature range. With 11 wt% of TiO₂, an ɛ_r value of 9.3, a Q × f value of 113,000 GHz, and a τ_f value of 1.0 ppm/°C are obtained at 1250 °C. The relationships between microstructure and properties are also studied. Our results show that willemite with appropriate TiO₂ is an ideal temperature stable, low ɛ_r and high Q × f dielectric for millimeter-wave application.     

Microwave dielectric properties of LiNb3O8 ceramics with TiO2 additions

The microwave dielectric properties of LiNb₃O₈ ceramics were investigated as a function of the sintering temperature and the amount of TiO₂ additive. LiNb₃O₈ ceramics, which were calcined at 750 °C and sintered at 1075 °C for 2 h, showed a dielectric constant (ɛ_r) of 34, a quality factor (Q × f₀) of 58,000 GHz and a temperature coefficient of resonance frequency (τ_f) of −96 ppm/°C, respectively. The density of the samples influenced the properties of these properties. As the TiO₂ content increased in the LiNb₃O₈–TiO₂ system, ɛ_r and τ_f of the material were increased due to the mixing effect of TiO₂ phase, which has higher dielectric constant and larger positive τ_f. The 0.65LiNb₃O₈–0.35TiO₂ ceramics showed a dielectric constant ɛ_r of 46.2, a quality factor (Q × f₀) of 5800 GHz and a temperature coefficient of resonance frequency τ_f of near to 0 ppm/°C.     

The effect of sintering temperature and time on microwave properties of Sm(Zn1/2Ti1/2)O3 ceramics for resonators

The microwave dielectric properties of Sm(Zn_1/2Ti_1/2)O₃ ceramics have been investigated. Sm(Zn_1/2Ti_1/2)O₃ ceramics were prepared by conventional solid-state route with various sintering temperatures and times. The prepared Sm(Zn_1/2Ti_1/2)O₃ exhibited a mixture of Zn and Ti showing 1:1 order in the B-site. Higher sintered density of 7.01 g/cm³ can be produced at 1310 °C for 2 h. The dielectric constant values (ɛ_r) of 22–31 and the Q × f values of 4700–37,000 (at 8 GHz) can be obtained when the sintering temperatures are in the range of 1250–1370 °C for 2 h. The temperature coefficient of resonant frequency τ_f was a function of sintering temperature. The ɛ_r value of 31, Q  ×  f value of 37,000 (at 8 GHz) and τ_f value of −19 ppm/°C were obtained for Sm(Zn_1/2Ti_1/2)O₃ ceramics sintered at 1310 °C for 2 h. For applications of high selective microwave ceramic resonator, filter and antenna, Sm(Zn_1/2Ti_1/2)O₃ is proposed as a suitable material candidate.     

Effects of sintering parameters and Nd doping on the microwave dielectric properties of Y2O3 ceramics

Y₂O₃ ceramics with good dielectric properties were prepared via co-precipitation reaction and subsequent sintering in a muffle furnace. The effects of Nd doping and sintering temperature on microwave dielectric properties were studied. With the increase in sintering temperature, the density, quality factor (Q×f), and dielectric constant (ε_r) values of pure Y₂O₃ ceramics increased to the maximum and then gradually decreased. The Y₂O₃ ceramics sintered at 1500 °C for 4 h showed optimal dielectric properties: ε_r=10.76, Q×f=82, 188 GHz, and τ_f=−54.4 ppm/°C. With the addition of Nd dopant, the Q×f values, ε_r, and τ_f of the Nd: Y₂O₃ ceramics apparently increased, but excessive amount degraded the quality factor. The Y₂O₃ ceramics with 2 at% Nd₂O₃ sintered at 1460 °C displayed good microwave dielectric properties: ε_r=10.4, Q×f=94, 149 GHz and τ_f=−46.2 ppm/°C.     

Microwave dielectric properties of novel temperature stable high Q Li2Mg1−xZnxTi3O8 and Li2A1−xCaxTi3O8 (A = Mg,Zn) ceramics

The Li₂Mg_1?xZn_xTi₃O₈ (x = 0–1) and Li₂A_1?xCa_xTi₃O₈ (A = Mg, Zn and x = 0–0.2) ceramics are synthesized by solid-state ceramic route and the microwave dielectric properties are investigated. The Li₂MgTi₃O₈ ceramic shows ?_r = 27.2, Q_u × f = 42,000 GHz, and τ_f = (+)3.2 ppm/°C and Li₂ZnTi₃O₈ has ?_r = 25.6, Q_u × f = 72,000 GHz, and τ_f = (?)11.2 ppm/°C respectively when sintered at 1075 °C/4 h. The Li₂Mg_0.9Zn_0.1Ti₃O₈ dielectric ceramic composition shows the best dielectric properties with ?_r = 27, Q_u × f = 62,000 GHz, and τ_f = (+)1.1 ppm/°C. The effect of Ca substitution on the structure, microstructure and microwave dielectric properties of Li₂A_1?xCa_xTi₃O₈ (A = Mg, Zn and x = 0–0.2) has also been investigated. The materials reported in this paper are excellent in terms of dielectric properties and cost of production compared to commercially available high Q dielectric resonators.     

Low temperature sintering and microwave dielectric properties of Ba3Ti5Nb6O28 with ZnO–B2O3 glass additions for LTCC applications

The effects of ZnB₂O₄ glass additions on the sintering temperature and microwave dielectric properties of Ba₃Ti₅Nb₆O₂₈ have been investigated using dilatometer, X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and a network analyzer. The pure Ba₃Ti₅Nb₆O₂₈ system showed a high sintering temperature (1250 °C) and had the good microwave dielectric properties: Q × f of 10,600 GHz, ɛ_r of 37.0, τ_f of −12 ppm/°C. It was found that the addition of ZnB₂O₄ glass to Ba₃Ti₅Nb₆O₂₈ lowered the sintering temperature from 1250 to 925 °C. The reduced sintering temperature was attributed to the formation of ZnB₂O₄ liquid phase and B₂O₃-rich liquid phases. Also the addition of ZnB₂O₄ glass enhanced the microwave dielectric properties: Q × f of 19,100 GHz, ɛ_r of 36.6, τ_f of 5 ppm/°C. From XPS and XRD studies, these phenomena were explained in terms of the reduction of oxygen vacancies and the formation of secondary phases having the good microwave dielectric properties.     

Ultrahigh Q values and atmosphere-controlled sintering of Li2(1+x)Mg3ZrO6 microwave dielectric ceramics

Ultrahigh-Q Li_2(1+x)Mg₃ZrO₆ microwave dielectric ceramics were successfully prepared by means of atmosphere-controlled sintering through simultaneously adopting double crucibles and sacrificial powder. This technique played an effective role in suppressing the lithium volatilization and further promoting the formation of the liquid phase, as evidenced by the X-ray diffraction, microstructural observation and the density measurement. Both dense and even microstructure, and the suppression of detrimental secondary phases contributed to low-loss microwave dielectric ceramics with Q×f values of 150,000–300,000 GHz. Particularly, desirable microwave dielectric properties of ε_r=12.8, Q×f=307,319 GHz (@9.88 GHz), and τ_f=−35 ppm/°C were achieved in the x=0.06 sample as sintered at 1275 °C for 6 h.     

Investigation of the relations between structure and microwave dielectric properties of divalent metal tungstate compounds

The microwave dielectric characteristics of AWO₄ (A = Mg, Zn, Mn, Ca, Sr, Ba) compounds and their relations with structure have been investigated as a function of A cations. Crystal structure was investigated by XRD; the structure changed from wolframite to scheelite with increasing size of A cation. Dielectric properties such as permittivity, temperature coefficient of resonant frequency (τ_f), and quality factors (Q × f) were found to be correlated with the size of A cations and the structure of compounds. Permittivity decreased with the size of A cations, and temperature coefficient of resonant frequency was correlated with unit cell volume. AWO₄ compounds are suitable for the applications of low-k dielectric materials; permittivity = 8–15, τ_f = −50 to −70, and Q × f = 60,000–70,000.     

Structure and properties of low temperature sintered ZnTa2O6 microwave dielectric ceramics

ZnTa₂O₆ microwave dielectric ceramics have been prepared using ZnTa₂O₆ nano-powders synthesized by sol–gel processing in this study. The crystal structure and microstructure of the ZnTa₂O₆ powders and ceramics were characterized by XRD and SEM techniques. ZnTa₂O₆ ceramics can be densified at a lower sintering temperature of 1200 °C. Microwave dielectric properties show that both of Q × f and ?_r values are lower than those of ceramics prepared by solid state route, and the τ_f values do not show different from that of solid state route. ZnTa₂O₆ ceramics sintered at 1200 °C exhibit good microwave dielectric properties: Q × f = 50,600 GHz, ?_r = 35.12 and τ_f = 9.69 ppm/°C.     

Sintering behavior and microwave dielectric properties of Ca1-xBixW1-xVxO4 ceramics

Structure, sintering behavior and microwave dielectric properties of ceramics have been investigated by x-ray powder diffraction (XRD) and scanning electron microscopy (SEM) in this paper. The microwave dielectric properties of the ceramics were studied with a network analyzer at the frequency of about 6–11 GHz. The sintering temperature and microwave dielectric properties could be successfully tuned in a wide window simultaneously by adjusting the A–O bond characteristics. The sintering temperature of CaWO₄ was successfully reduced from 1100 °C to about 950 °C by BiVO₄ addition. Approximately 95%–96% theoretical density could be obtained after sintering at 950 °C for 2 h. All samples exhibit single Scheelite structure (I4₁/a) phase. The dielectric constant increased, whereas the Q×f value decreased, with the increase of x. The τ_f value changed from negative to positive with the increases of x. Combined excellent microwave dielectric properties with ε_r=22. 1, Q×f=16,730 GHz and τ_f=2.39 ppm/°C could be obtained after sintered at the 950 °C for 2 h for x=0.3 compositions.     

Crystal structure–microwave dielectric property relations in Sm(Nb1−xTax)(Ti1−yZry)O6 ceramics

The effects of the Ta substitution for Nb and the Zr substitution for Ti on the microwave dielectric properties and crystal structure of Sm(Nb_1−xTa_x)(Ti_1−yZr_y)O₆ ceramics were investigated in this study. The Sm(Nb_1−xTa_x)TiO₆ (x = 0–1) ceramics were single phase, whereas the limit of solid solutions for the SmTa(Ti_1−yZr_y)O₆ ceramics was y = 0.4. In the case of the Sm(Nb_1−xTa_x)TiO₆ ceramics, the dielectric constant and the temperature coefficient of resonant frequency were decreased, whereas the quality factor was increased by the Ta substitution for Nb. The maximum Q · f value was obtained when the SmTaTiO₆ was synthesized, and the microwave dielectric properties are, ɛ_r = 37.6; τ_f = 24.2 ppm/°C; and Q · f = 24541 GHz. On the other hand, the dielectric constants of the SmTa(Ti_1−yZr_y)O₆ ceramics were decreased from 37.6 to 28.9, whereas the quality factor was increased from 24541 to 38320 GHz with increasing composition y from 0 to 0.4. The temperature coefficient of resonant frequency of the ceramics varied from 24.2 to −11.6 ppm/°C. A near zero temperature coefficient of resonant frequency results from the composition of y = 0.3 with a dielectric constant of 31.1 and Q · f value of 37481 GHz.     

Microwave dielectric properties of forsterite-based solid solutions

Recently forsterite has been reported as an excellent dielectric material for millimeter wave application. However, its temperature variation of the resonant frequency (τ_f) is relatively large which precludes its immediate use in practical applications. In this paper, we report the effect of substituting Ca and Mn for Mg on the microwave dielectric properties of forsterite. The composition 0.975Mg₂SiO₄–0.025Mn₂SiO₄ showed excellent Q × f value of 180,000 GHz with a τ_f of −71 ppm/°C. The end member Mn₂SiO₄, showed a Q × f of 50,000GHz, ɛ_r of 8.52 and τ_f  =  −90 ppm/°C. In the case of Ca substitution for Mg, τ_f shifted to high negative value with increasing amount of Ca. However, Q × f did not show much change in its value. It is suggested that the increase of τ_f towards a more negative value is related to the ionic radii of the substitutes.     

Low temperature sintering of BaCu(B2O5)-added BaO–Re2O3–TiO2 (Re = Sm,Nd) ceramics

The sintering temperature of BaSm₂Ti₄O₁₂ (BST) and BaNd₂Ti₅O₁₄ (BNT) ceramics was approximately 1350 °C and decreased to 875 °C with the addition of BaCu(B₂O₅) (BCB) ceramic powder. The presence of the liquid phase was responsible for the decrease of the sintering temperature. The liquid phase is considered to have a composition similar to the BaO-deficient BCB. The bulk density and dielectric constant (ɛ_r) of the specimens increased and reached saturated value with increasing BCB content. The Q-value initially increased with the addition of BCB, but decreased considerably when a large amount of BCB was added, because of the presence of the liquid phase. Good microwave dielectric properties of Q × f = 4500 GHz, ɛ_r = 60 and τ_f = −30 ppm/°C were obtained for the 16.0 mol% BCB-added BST ceramics sintered at 875 °C for 2 h. Moreover, the BST and BNT ceramics containing BCB show good compatibility with silver metal.