硅基二氧化硅保偏光波导起偏器的设计

利用平面波导结构中的双折射效应并结合模式理论,设计了一种新型SiO2/Si基的保偏波导起偏器,使得两个正交偏振模式中的TM模式被截止,TE模式可以通过.利用三维有限差分光束传输法(3D FD-BPM)进行数值模拟,结果显示,当入射波长为1.55μm,器件长度为8mm时,起偏器的消光比可高达到50dB以上.在不增加工艺复杂度的前提下,采用这种光波导的结构可以直接制作起偏器,同时还可以方便地与其他平面波导器件集成.     

硅基二氧化硅单模单偏振光波导的设计

在不增加工艺难度的前提下,利用硅基二氧化硅光波导的双折射效应并结合有效折射率方法, 设计了一种新型单模单偏振波导, 使得两个正交偏振模式中的TM 模式被截止, TE 模式可以通过. 利用三维有限差分光束传输法(3D -BPM ) 进行数值模拟,结果显示,对于TM 模式消光比可高达到50dB 以上.此种结构的光波导可以直接制作偏振器, 同时还易与其他波导器件集成.     

新型偏振式CO2波导激光器

为了简化偏振式CO2波导激光器的结构与制造工艺,提出了一种具有新型起偏装置的偏振式CO2波导激光器.该起偏装置就是一矩形波导型阴极.利用位于放电波导口处的矩形波导型阴极对腔内光束的特殊作用,使得只有某一偏振方向的光束才能在光腔内形成稳定的振荡,从而输出稳定的偏振光.从理论上分析了该器件的起偏机理,并通过实验测定了该器件的偏振度指标.该新型器件具有结构与工艺简单、价格低廉等特点,其输出光的线偏振度大于98%.     

基于耦合边界的紧凑型光子晶体定向耦合器的优化设计

本文采用平面波展开法分析了双线型缺陷并列平行光子晶体波导的带隙结构、缺陷模式及耦合长度,提出了一种具有耦合边界的光子晶体定向耦合器,并探讨了光波在其中的传输性能.同时基于平面波展开法及时域有限差分法,深入分析和讨论了光波在光子晶体并列波导、光子晶体直角转弯模块中的工作模式和传输特性.利用该光子晶体定向耦合器结合光子晶体转角器件可以将两根平行标准单模光纤传输模式组合成交叉态、直通态和功分态等状态.仿真结果表明在交叉态和直通态时,使用该光子晶体定向耦合器的传输峰值可以在较大频率带宽内达到90%以上.     

硅基槽型微环谐振器及其调谐特性研究

仿真和实验研究了含槽型(slot)光波导的反馈波导型微环谐振器的特性,将槽型光波导集成到Si基微环谐振器中,丰富Si基光波导的功能,为新型光电子器件的实现提供途径。通过锥形波导结构实现从传统波导到槽型波导的模式转换,减小传输损耗,采用时域有限差分法(FDTD)研究了光功率的分布和模式转换过程。结果显示,光功率逐渐转移到锥形结构两侧的槽型波导中并最终形成槽型波导中的传输模式,通过优化锥形结构能实现较高的模式转换效率,可以达到90%以上。采用电子束刻写技术和等离子刻蚀技术制备了反馈波导型槽型微环谐振器。实验显示,锥形波导能够实现模式的转换,光传输过程良好。通过在槽型波导中填充电光聚合物来改变槽型光波导的折射率,测量结果显示,传输谱谐振峰发生了明显移动,移动幅度达到5.6nm,器件具备很好的可调谐性。     

SOI阵列波导光栅的设计与制作

本文讲述了基于SOI材料的5×5阵列波导光栅(AWG)的设计与器件的制作.设计结果显示,通过选择合适的波导结构可以有效地减小器件的偏振特性;采用合适的弯曲半径,不但可以减小器件的损耗,而且可以降低器件的串扰.器件的测试结果表明,器件的中心波长、通道间隔与设计值基本相符;器件的相邻信导串扰接近10dB.器件初步达到分波的功能.     

顶部平坦化32通道AWG的设计与研制

根据优化输入端多模干涉器(MMI)结构设计,研制出32通道50 GHz通道间隔、顶部平坦化的阵列波导光栅(AWG)器件。该器件的采用6μm×6μm折射率差为0.75%的Si基SiO2埋型波导结构,阵列波导数为130,罗兰圆半径为9 419.72μm,相邻阵列波导长度差为128.42μm。测试结果表明:AWG器件插入损耗(IS)为-5~-8.5 dB,串扰>-25 dB,3 dB带宽>0.25 nm。     

光子晶体太赫兹波导带隙的研究

提出了一种光子晶体太赫兹波导,该波导包层为硅介质中含有按三角形格子周期排列的空气孔,纤芯为有机材料聚乙烯.这种波导是一种带隙效应波导.首先介绍平面波法(PWM)的理论,然后应用平面波法分析了这种光子晶体太赫兹波导的带隙结构,研究空气填充率变化对光子带隙结构的影响,得到了光子晶体太赫兹波导周期性结构的结构参数及与其相对应的导波频率.分析结果表明,增大空气填充率,可得到多条带隙和较大的带隙宽度,更易于实现纤芯导光.保持空气填充率不变,仅改变空气空间距可以在保持带隙结构不变条件下改变光子晶体太赫兹波导的导光频率.     

偏振式CO2波导激光器的一种新型起偏方法

本文提出了偏式ＣＯ２波导激光器的一种新型起偏方法,即平板阴极起偏法,利用位于波导口处的平板阴极对腔内光束的特殊作用,使得只有电偏振方向与平板阴极平行的光束才能在光腔内形宣誓汤雇卢偏的器件具有结构与工艺简单,价格低廉等特点,其输出光的线偏度大于９７％。     

平面波导激励的对称型表面等离子体共振结构的研究

研究了一种平面波导激励的对称型表面等离子体共振（SPR）结构,该结构以一定厚度的介质两侧覆盖金属层为核心。理论分析表明,该结构的TM0模式为表面波。研究了一定波长下不同介质时金属膜间介质厚度与等效折射率之间自勺．关系。采用离子交换技术制备了多模平面波导,对其等效折射率进行了测试,采用平面波导激励对称结构的等离子体表面波...     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.