氮化铁薄膜中反常霍尔效应的研究

通过磁控溅射方法制备了氮含量不同的氮化铁薄膜,观察到随着氮含量的增加,薄膜的导电机制从金属到半导体的转变。霍尔电阻的测量表明在高电阻区域反常霍尔电阻率与纵向电阻率的标度律为线性,即反常霍尔效应遵循斜散射机制,但相应的反常霍尔电导率与纵向电导率的关系不总是线性。     

Observation of Quantum Anomalous Hall Effect and Exchange Interaction in Topological Insulator/Antiferromagnet Heterostructure

Integration of a quantum anomalous Hall insulator with a magnetically ordered material provides an additional degree of freedom through which the resulting exotic quantum states can be controlled. Here, an experimental observation is reported of the quantum anomalous Hall effect in a magnetically-doped topological insulator grown on the antiferromagnetic insulator Cr₂O₃. The exchange coupling between the two materials is investigated using field-cooling-dependent magnetometry and polarized neutron reflectometry. Both techniques reveal strong interfacial interaction between the antiferromagnetic order of the Cr₂O₃ and the magnetic topological insulator, manifested as an exchange bias when the sample is field-cooled under an out-of-plane magnetic field, and an exchange spring-like magnetic depth profile when the system is magnetized within the film plane. These results identify antiferromagnetic insulators as suitable candidates for the manipulation of magnetic and topological order in topological insulator films.     

Pseudogap in the Normal State of Cuprates

We consider underdoped cuprates as disordered conductors. The diffusion coefficient D can be as low as 10^–5 m² s^–1. In these conditions, Coulomb interaction between electrons must be taken into account. The main effect is to open a dip and even a gap in the density of state (DOS) near the Fermi level (FL). We show that this model explains most of the observed features of the so-called pseudogap in the normal state and in particular its value, anisotropy, and variation with doping.     

Explanation of Non-linear In-Plane Resistivity and Hall Coefficient in the Normal State of Cuprates: Polaronic Approach

We present a theoretical study of the in-plane resistivity ρ _{a b} (T) and Hall coefficient R _H (T) within the polaronic model and precursor pairing scenario by considering a two-component charge carrier picture in the normal state of high-temperature superconducting cuprates (HTSC). Here, we use a Boltzmann-equation approach and extended BCS-like model to compute ρ _{a b} (T) and R _H (T) in the τ-approximation. The opening of the pseudogap (PG) in the normal state of the cuprates should affect their transport properties. We have found that the transition to the PG regime and the effective conductivity of charge carriers in the normal state are responsible for the pronounced non-linear temperature dependence of ρ _{a b} and R _H . With the two-component model analysis, we conclude that the opening of the BCS-like PG, while the non-linear temperature dependence of ρ _{a b} and R _H could be understood as a consequence of pairing fluctuations in the PG state of cuprate superconductors. The calculated results for ρ _{a b} (T) and R _H (T) were compared with the experimental data obtained for various hole-doped cuprates. For all the considered cases, a good quantitative agreement was found between theory and experimental data. We also show that the energy scales of the binding energies of charge carriers are identified by PG crossover temperature on the cuprate phase diagram.     

Enhancing the Quantum Anomalous Hall Effect by Magnetic Codoping in a Topological Insulator

The quantum anomalous Hall (QAH) effect, which has been realized in magnetic topological insulators (TIs), is the key to applications of dissipationless quantum Hall edge states in electronic devices. However, investigations and utilizations of the QAH effect are limited by the ultralow temperatures needed to reach full quantization—usually below 100 mK in either Cr‐ or V‐doped (Bi,Sb)₂Te₃ of the two experimentally confirmed QAH materials. Here it is shown that by codoping Cr and V magnetic elements in (Bi,Sb)₂Te₃ TI, the temperature of the QAH effect can be significantly increased such that full quantization is achieved at 300 mK, and zero‐field Hall resistance of 0.97 h/e² is observed at 1.5 K. A systematic transport study of the codoped (Bi,Sb)₂Te₃ films with varied Cr/V ratios reveals that magnetic codoping improves the homogeneity of ferromagnetism and modulates the surface band structure. This work demonstrates magnetic codoping to be an effective strategy for achieving high‐temperature QAH effect in TIs.     

Calculating the Effects of Longitudinal Resistance in Multi-Series-Connected Quantum Hall Effect Devices

Many ac quantized Hall resistance experiments have measured significant values of ac longitudinal resistances under temperature and magnetic field conditions in which the dc longitudinal resistance values were negligible. We investigate the effect of non-vanishing ac longitudinal resistances on measurements of the quantized Hall resistances by analyzing equivalent circuits of quantized Hall effect resistors. These circuits are based on ones reported previously for dc quantized Hall resistors, but use additional resistors to represent longitudinal resistances. For simplification, no capacitances or inductances are included in the circuits. The analysis is performed for many combinations of multi-series connections to quantum Hall effect devices. The exact algebraic solutions for the quantized Hall resistances under these conditions of finite ac longitudinal resistances provide corrections to the measured quantized Hall resistances, but these corrections do not account for the frequency dependences of the ac quantized Hall resistances reported in the literature.     

Temperature Dependence of the Hall and Longitudinal Resistances in a Quantum Hall Resistance Standard

We present detailed measurements of the temperature dependence of the Hall and longitudinal resistances on a quantum Hall device [(GaAs(7)] which has been used as a resistance standard at NIST. We find a simple power law relationship between the change in Hall resistance and the longitudinal resistance as the temperature is varied between 1.4 K and 36 K. This power law holds over seven orders of magnitude change in the Hall resistance. We fit the temperature dependence above about 4 K to thermal activation, and extract the energy gap and the effective g-factor.     

石墨烯在量子霍尔电阻中的应用

基于砷化镓的量子霍尔电阻自然基准需要在约1.5K的温度条件下运行,存在成本高和操作复杂等诸多问题。随着石墨烯材料独特电性能的发现,因其可以在约4.2K的温度复现量子霍尔效应而成为制作量子霍尔电阻的理想材料。各国专家围绕石墨烯在电学计量领域的应用开展了大量的工作,取得了可喜的进展。对当前石墨烯在量子霍尔电阻中应用的进展和存在的问题进行了总结,并对未来的发展进行了展望。     

Anomalous Hall Effect in Sn1?x?yMnxEuyTe and Sn1?x?yMnxEryTe Mixed Crystals

The Anomalous Hall Effect (AHE) was investigated in IV–VI ferromagnetic semimagnetic semiconductors of Sn_1–x Mn _x Te codoped with either Eu or Er. The analysis of experimental data is as follows. Hall resistivity and magnetization showed that AHE coefficient R _s depends on temperature and its value decreases with thetemperature increase. We observe that above ferromagnet–paramagnet transition temperature R _s changes sign. We discuss the possible physical mechanisms responsible for observed temperature dependence of R _s , particularly change of the sign.     

Observation and an Explanation of Breakdown of the Quantum Hall Effect

We observe a spatially localized breakdown of the nearly dissipationless quantum Hall effect into a set of discrete dissipative states in wide, high-quality GaAs/AlGaAs samples. The phenomenon can be explained by an extension of the quasi-elastic inter-Landau level scattering model of Eaves and Sheard.     

Analyzing the Effects of Capacitances-to-Shield in Sample Probes on AC Quantized Hall Resistance Measurements

We analyze the effects of the large capacitances-to-shields existing in all sample probes on measurements of the ac quantized Hall resistance R_H. The object of this analysis is to investigate how these capacitances affect the observed frequency dependence of R_H. Our goal is to see if there is some way to eliminate or minimize this significant frequency dependence, and thereby realize an intrinsic ac quantized Hall resistance standard. Equivalent electrical circuits are used in this analysis, with circuit components consisting of: capacitances and leakage resistances to the sample probe shields; inductances and resistances of the sample probe leads; quantized Hall resistances, longitudinal resistances, and voltage generators within the quantum Hall effect device; and multiple connections to the device. We derive exact algebraic equations for the measured R_H values expressed in terms of the circuit components. Only two circuits (with single-series “offset” and quadruple-series connections) appear to meet our desired goals of measuring both R_H and the longitudinal resistance R_x in the same cool-down for both ac and dc currents with a one-standard-deviation uncertainty of 10⁻⁸ R_H or less. These two circuits will be further considered in a future paper in which the effects of wire-to-wire capacitances are also included in the analysis.     

Dependence of Quantized Hall Effect Breakdown Voltage on Magnetic Field and Current

When large currents are passed through a high-quality quantized Hall resistance device the voltage drop along the device is observed to assume discrete, quantized states if the voltage is plotted versus the magnetic field. These quantized dissipative voltage states are interpreted as occurring when electrons are excited to higher Landau levels and then return to the original Landau level. The quantization is found to be, in general, both a function of magnetic field and current. Consequently, it can be more difficult to verify and determine dissipative voltage quantization than previously suspected.     

正极材料与催化剂对锂空气电池性能的影响及相关研究进展

锂空气电池因其高理论能量密度引起了广泛关注。评述了锂空气电池正极材料及催化剂研究情况,分析了正极材料的结构、组成及催化活性对锂空气电池放电容量、稳定性及循环性能的影响,探讨了固体催化剂与可溶性催化剂在降低充电过电位、提高锂空气电池的稳定性与循环性能方面的作用,阐述了正极对锂空气电池性能的重要性及研究所面临的挑战。     

Ferromagnetic Resonance and Hall Effect Characterization of GaMnSb Layers

The electrical and magnetic properties of GaSb:Mn layers deposited on (100)GaAs substrates from a laser plasma in vacuum have been studied. It is shown that the films deposited at 200–440 °C are mosaic single crystalline and epitaxial to the substrate, with p-type conduction. Manganese-doped layers had a hole concentration higher than 1×10¹⁹ cm⁻³ and fairly high values of mobility (up to 40 cm²/V s at 300 K). The layers grown at 200 °C exhibited an anomalous Hall effect up to approximately room temperature. On the contrary, a normal Hall effect was observed in the layers grown at 440 °C. Ferromagnetic resonance measurements have revealed the existence of ferromagnetism in the sample grown at 200 °C. The transition temperature is close to room temperature, in full agreement with the Hall data. In the sample grown at 440 °C, the formation of ferromagnetic clusters has tentatively been concluded.     

Precision Tests of a Quantum Hall Effect Device DC Equivalent Circuit Using Double-Series and Triple-Series Connections

Precision tests verify the dc equivalent circuit used by Ricketts and Kemeny to describe a quantum Hall effect device in terms of electrical circuit elements. The tests employ the use of cryogenic current comparators and the double-series and triple-series connection techniques of Delahaye. Verification of the dc equivalent circuit in double-series and triple-series connections is a necessary step in developing the ac quantum Hall effect as an intrinsic standard of resistance.     

A scenario to the anomalous Hall effect in the mixed state of superconductors

We argue that the motion of vacancies in a pinned vortex lattice may dominate the contribution to the Hall effect in an appropriate parameter regime for a superconductor. Based on this consideration a model is constructed to explain the anomalous Hall effect without any modification of the basic vortex dynamic equation. Quantitative predictions are obtained. Present model can be directly tested by an observation of the vacancy motion.     

A Problem in AC Quantized Hall Resistance Measurements and a Proposed Solution

In all experiments reported to date the measured values of the ac quantized Hall resistances R_H varied with the frequency of the applied current, and differed significantly from the dc values of R_H, making it difficult to use the ac quantum Hall effect as an absolute impedance standard. We analyze the effects due to the large capacitances-to-shields existing in the sample probes on measurements of R_H to see if this is the source of the problem. Equivalent electrical circuits are utilized; they contain capacitances and leakage resistances to the sample probe shields, longitudinal resistances within the quantized Hall effect devices, and multiple connections to the devices. The algebraic solutions for the R_H values in these circuits reveal large out-of-phase contributions to the quantized Hall voltages V_H that would make it difficult to do accurate measurements with high precision ac bridges. These large out-of-phase contributions could introduce the linear frequency dependences observed in previous R_H measurements. We predict, however, that quadruple-series connections to the quantum Hall devices yield only small out-of-phase contributions to V_H which may allow accurate measurements of the quantity R_H − R_x, where R_x is the longitudinal resistance along the device.     

Potential and Current Distributions Calculated Across a Quantum Hall Effect Sample at Low and High Currents

The potential and current distributions are calculated across the width of a quantum Hall effect sample for applied currents between 0 μA and 225 μA. For the first time, both a confining potential and a current-induced charge-redistribution potential are used. The confining potential has a parabolic shape, and the charge-redistribution potential is logarithmic. The solution for the sum of the two types of potentials is unique at each current, with no free parameters. For example, the charge-depletion width of the confining potential is determined from a localization experiment by Choi, Tsui, and Alavi, and the spatial extent of the conducting two-dimensional electron gas across the sample width is obtained from the maximum electric field deduced from a high-current breakdown experiment by Cage and Lavine, and from the quantum Hall voltage. The spatial extent has realistic cut-off values at the sample sides; e.g., no current flows within 55 magnetic lengths of the sides for currents less than 215 μA. The calculated potential distributions are in excellent agreement with contactless electro-optic effect laser beam measurements of Fontein et al.     

Hall Tunneling of Vortices in Superclean Superconductors

We discuss the main features of Hall tunneling of pancake vortices in superclean high-T _c superconductors. The general formalism for the calculation of the lifetime of a vortex pinned in a metastable configuration is described. The results are applied to the problem of quantum tunneling of a pancake vortex from a columnar defect in the limit of a small driving current.