40Gb/s光纤通信系统中不同码型传输特性的实验研究

在高速光纤通信系统中码型的选择是决定系统传输质量和光谱效率的主要因素。码型的选择和信道速率、信道波长间隔、光放大器的选择、光放大器放置间隔、光纤的类型、色散管理策略等各种因素密切相关。分析了非归零码（NRZ）、归零码（RZ）和载波抑制归零码（CSRZ）码型的产生方式及特点。采用单信道和掺铒光纤放大器（EDFA）放大方式对三种码型进行了40Gb/s的100kmG.652光纤通信传输实验。比较了三种码型的系统传输持性、最佳入纤功率和不同入纤功率下的功率代价：载波抑制归零码最佳入纤功率为9dBm，功率代价小于非归零码和归零码。结果表明，在相同的色散补偿条件下，载波抑制归零码比归零码和非归零码有更优的非线性容忍度。     

归零码和非归零码传输系统模

对单信道40Gbit/s归零码（RZ）和非归零码（NRZ）传输系统进行了实际模拟。考虑了光纤损耗，二阶群速率色散、三阶群速度色散、偏振模色散及放大器噪声对系统影响，采用Q值判别法计算了系统可传输的最大距离，给出了系统眼图。计算结果表明，RZ的最大传输距离大于NRZ码，RZ系统传输性能优于NRZ系统。     

RZ、CSRZ码在CBG色散补偿系统中的传输

全部利用线性啁啾光纤布拉格光栅（CBG）作色散补偿模块和在线通道滤波顺，在2500km超长距离的G．652光纤上实现10Ghps归零码（RZ）、载波抑制归零码（CSRZ）光信号的无电中继传输，并在2080km和2560km处分别对2种信号的传输性能进行了测试。CSRZ在上述2处的功率代价分别为～1dBm和～3dBm（BER-10^12，PRBS=10^23-1），RZ的功率代价分别为～3dBm和～5dBm，验证了在相同系统平台下CSRZ光信号比RZ光信号有更好的性能.     

光纤数字通信中NRZ与RZ码序列的定时时钟提取

在光纤数字通信系统中,NRZ非归零码和RZ归零码是最常见的基带信号。由于两者频谱成分不同,其定时时钟提取方式则不同。本文通过对NRZ、RZ伪随机码序列进行频谱分析,得知当NRZ码变换成码元占空比为1/2的RZ码时,所提取出的定时时钟功率最强。     

基于微环谐振器和窄带滤波器的全光归零到非归零码型转换

基于信号频谱变换的原理,利用微环谐振器的梳状谱传输特性,辅助以窄带滤波器,将全光归零(RZ)码信号的频谱包络转变为较理想的非归零(NRZ)码信号的频谱包络,从而实现RZ码到NRZ码的码型转换。详细研究了转换后的NRZ信号眼图质量与设备因素,如窄带滤波器的选择、微环谐振器的耦合条件以及输入信号RZ码占空比的关系。结果表明窄带滤波器为2阶巴特沃斯滤波器时,微环谐振器的耦合条件以及RZ码占空比对码型转换效果的影响较小。另外,通过调整微环谐振器的尺寸,设计的码型转换器能与不同速率的系统相兼容,能更好地适应未来光网络的发展。     

偏振模色散对NRZ码和RZ码系统影响的研究

利用分步傅里叶变换求解在双折射光纤中的耦合非线性薛定谔方程,数值计算了偏振模色散（PMI）对20Gbit/s的非归零码（NRZ）和归零码（RZ）通信系统的影响,通过数值计算发现采用一定脉冲宽度的RZ可以有效地降低PMD对通信系统的影响,并在此基础上,计算了系统传输最大距离时所满足的脉冲最佳宽度。     

四种级联差分相位调制码的100 Gbit/s传输

在级联相位调制的100 Gbit/s光信号传输系统中,对差分相移键控非归零码(NRZ-DPSK)、差分相移键控归零码(RZ-DPSK)、差分四相相移键控非归零码(NRZ-DQPSK)和差分四相相移键控归零码(RZ-DQPSK)进行了比较研究.当四种信号通过90 km的标准单模光纤(SMF)和16 km的色散补偿光纤(DCF)传输后,在满足相同入纤功率的条件下,NRZ-DQPSK信号具有最高的色散容限;如果仪仪考虑一阶偏振模色散(PMD),RZ-DQPSK信号具有最优的抗偏振模色散特性;当入纤功率在O～10 dBm的范围内凋节时,RZ-DPSK信号具有最好的非线性容忍度;最后比较了四种相位调制码型传输后通过不同带宽的三阶高斯滤波器后的接收性能,得出滤波器带宽值大于125 GHz后,NRZ-DPSK信号的接收性能最佳.     

40Gb/sWDM系统中RZ&NRZ调制格式的性能比较

利用数值计算的方法对40G WDM系统进行了仿真.在考虑了光纤群速度色散(GVD)、三阶色散(TOD)、自相位调制(SPM)、交叉相位调制(XPM)、四波混频(FWM)和偏振模色散(PMD)的前提下,通过对比眼图和Q因子,对归零码(RZ)和非归零码(NRZ)调制格式的传输性能进行了研究.     

CS-RZ码在高速系统中传输性能的研究

文章介绍了栽波抑制归零码(CS-RZ)的产生机制及其优良的传输性能,并采用计算机仿真比较了CS-RZ、非归零(NRZ)和归零(RZ),这三种码在40Gbit／s速率下的传输性能．CS-RZ码抗自相位调制(SPM)比较好,而且有高的色散容限．从色散容限和SPM容限的角度来说,CS-RZ码是一种最好的调制格式．     

不同调制码型的偏振模色散补偿研究

在40Gb/s的光纤通信系统中,用三段模拟器模拟光纤传输中的一阶与二阶偏振模色散(PMD),采用单偏振态的偏振度(DOP)作为多级PMD补偿器的反馈信号,对归零(RZ)码、非归零(NRZ)码、载波抑制归零(CSRZ)码和啁啾归零(CRZ)码分别进行四个自由度的一级、六个自由度的二级和十个自由度的三级PMD补偿器的补偿.仿真得到了四种码型的DOP与误码率(BER)的关系,同时补偿后的BER、DOP和PMD的变化关系表明,对RZ和NRZ码采用二级补偿器的效果比一级和三级补偿器要好得多,对CSRZ码和CRZ码采用单偏振态的DOP作为反馈信号进行PMD补偿的效果并不理想.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.