AFM Study on Interface of HTHP As-grown Diamond Single Crystal and Metallic Film

The study for the interface of as-grown diamond and metallic film surrounding diamond is an attractive way for understanding diamond growth mechanism at high temperature and high pressure (HTHP), because it is that through the interface carbon atom groups from the molten film are transported to growing diamond surface. It is of great interest to perform atomic force microscopy (AFM) experiment; which provides a unique technique different from that of normal optical and electron microscopy studies, to observe the interface morphology. In the present paper,we report first that the morphologies obtained by AFM on the film are similar to those of corresponding diamondsurface, and they are the remaining traces after the carbon groups moving from the film to growing diamond. The fine particles and a terrace structure with homogeneous average step height are respectively found on the diamond(100) and (111) surface. Diamond growth conditions show that its growth rates and the temperature gradients inthe boundary layer of the molten film at HTHP result in the differences of surface morphologies on diamond planes,being rough on (100) plane and even on the (111) plane. The diamond growth on the (100) surface at HPHT could be considered as a process of unification of these diamond fine particles or of carbon atom groups recombination on the growing diamond crystal surface. Successive growth layer steps directly suggest the layer growth mechanism of the diamond (111) plane. The sources of the layer steps might be two-dimensional nuclei and dislocations.     

Structure and properties of tantalum carbide crystals

Single crystals of tantalum carbide, up to 2 mm in size have been grown from solution in a bath of molten iron. The slip plane was found to be {111} using a two-surface analysis on etch-pitted crystals deformed by microindentation at room temperature. Observations of etch-pit patterns around inclusions suggest that slip occurs on other planes at elevated temperatures. Maximum microhardness values between 3800 and 5200 Knoop (100 gm load) were found at a composition TaC_0.83±0.01. In regions of crystals with a carbon content less than TaC_0.83 a phase transformation was seen close to microhardness indentations in samples decarburised below 2200† C. The mechanical behaviour of tantalum carbide is discussed with reference to a general model for the electronic structure of carbides.     

3D ES势垒对Cu(111)和Cu(OO1)晶面同质外延生长的影响

三维3D ES势垒直接影响着层间扩散,在Cu(111)和Cu(100)面2D ES势垒和3D ES势垒是不同的.本文主要研究了基于(1+1)维KMC模型,在这两个特殊的晶面上Cu薄膜的同质外延生长.观察两个面的生长情况,发现随着温度的增加薄膜的粗糙度逐渐减小,由于Cu(111)表面2D ES势垒较小,所以Cu(111)面粗糙度的下降的速度比Cu(100)要快,Cu(111)表面更有利于薄膜的生长.对于纳米棒的应用,在生长时间较短时两个面的生长速率逐渐减小,但是Cu(100)面的生长速度比Cu(111)面更快,随着生长时间的增加,这两个面会出现多层台阶,Cu(111)面的生长速度会逐渐增加,最终会超过了Cu(100)面.多层台阶出现后对两个面的影响是不同的.由于Cu(111)表面3D ES势垒较大,在Cu(111)表面会形成较多的多层台阶,Cu(111)面上多层台阶数有利于纳米棒的生长,然而在Cu(100)表面3D ES势垒较小,Cu(100)表面很难形成多层台阶,所以Cu(100)面上纳米棒的生长速度并没有增加.正是因为3D ES势垒的存在才会导致多层台阶的出现,较大的3D ES势垒有利于纳米棒的生长.     

Slip patterns in sliding sphere experiments on (111) single crystal MnZn ferrite

By sliding a 0.25 mm radius ruby sphere on a (111) MnZn ferrite crystal, grooves have been made at speeds from 4 to 400 μm sec^?1, at loads from 0.5 to 4 N and after 1 to 1000 passes. The deformation is observed by microscopy and profilometry. For a single pass slip lines are observed in all directions of sliding, above a load that increases with sliding speed. Slip-line patterns are identified as due to {100}<011> slip, coupled to {111}<011> slip, as in earlier work on pencil patterns in indentations. At higher speeds of sliding the number of {100} lines decreases due to lack of nucleation of dislocations. The cross-slip to {111}, in general, shows an even stronger speed dependence. The number of slip lines at a given load and speed depends on the direction of sliding. Along <011> the density is largest. Along the density and the groove depth change when the direction is reversed. The angular variation is not determined by the (small) variations of the resolved shear stress, but by the necessity of repeated nucleation of slip. Curved slip lines are observed in several directions of sliding. The curvature is attributed to multiple cross-slip, from {111} back to {100}. Powder-like debris is formed during sliding by fracture of the slip steps. The powder is then transported to the sides of the groove by repeated sliding.     

Placing and imaging individual carbon nanotubes on Cu(111) clean surface using in situ pulsed-jet deposition-STM technique

We report pulsed-jet deposition of single-wall and double-wall carbon nanotubes (SWNTs and DWNTs; CNTs) onto a clean Cu(111) surface and their scanning tunneling microscopy (STM) observations under ultra-high vacuum (UHV). The clean Cu(111) surface prepared by a repeated Ar-sputtering and annealing is introduced into a load-lock chamber kept at a 10(-5)-Pa range vacuum, and the CNTs dispersed in a chloroform solution by ultrasonication are pulse-injected onto the surface. Since the substrate is annealed at 700 K to remove the residual solvent molecules, high resolution lattice images of the CNTs are successfully observed by STM. High-resolution chirality-resolved images of the two SWNTs with a metal cluster are also observed, supporting the well accepted growth mechanism of the CNTs from the metal-catalyst cluster. The present pulsed-jet deposition in high-vacuum is superior to the conventional spin-coating or drop-coating techniques for preparing clean and well-defined CNTs on clean surfaces for high-resolution and contamination-free UHV-STM observation.     

Mo_2C改性C/C-Cu复合材料的组织及载流摩擦磨损性能

采用熔盐法在低密度炭/炭(C/C)坯体内孔表面制备了Mo_2C涂层,然后通过无压熔渗制备了C/C-Cu复合材料,研究了C/C-Cu复合材料的组织结构及载流摩擦磨损性能。结果表明:熔融Cu可自发渗入制备了Mo_2C内涂层的C/C坯体,复合材料中Cu相与C/C坯体形成相互贯穿的连通网络结构,Mo_2C涂层与Cu和热解炭(PyC)间均有良好的界面结合,反应生成Mo_2C过程中的催化石墨化及应力石墨化共同作用使C/C-Cu复合材料中Mo_2C涂层附近PyC的有序度提高。随载荷增大,C/C-Cu复合材料的摩擦系数逐渐降低,体积磨损率增大,而对偶的质量损失逐渐降低;载荷较大时材料磨损表面被摩擦膜覆盖的面积增大,但因粘着磨损摩擦膜的粗糙程度提高。材料磨损过程中还发生了氧化磨损,且载荷增大磨损表面O含量提高。     

Solution growth of Cu2S nanowalls on Cu substrates and their characterization

A simple method of preparing Cu₂S nanowalls was presented by immersing Cu substrates into a Na₂S/HCl solution. X-ray diffraction (XRD) analysis revealed the formation of the monoclinic phase of Cu₂S nanostructures on Cu substrates, presenting a thickness of less than 100 nm and a height of several micrometers (called nanowalls) from the scanning electron microscopic (SEM) images. Moreover, the transmission electron microscopy (TEM) and X-ray energy dispersive spectrometry (EDS) characterizations indicated that these Cu₂S nanowalls were thinner near the sheet edge and had voids inside the sheets supposedly due to the etching reaction by Na₂S/HCl. Cu substrates with Cu₂S nanowalls were found to exhibit extinguished hydrophobicity (> 110°) resulting from their rough surfaces based on the water contact angle measurements. Electrical current-voltage analysis indicated the formation of a Schottky barrier at the Cu₂S/Cu interface.     

Synthesis of NiO nanowalls by thermal treatment of Ni film deposited onto a stainless steel substrate

Two-dimensional nanostructures have a variety of applications due to their large surface areas. In this study, the authors present a simple and convenient method to realize two-dimensional NiO nanowalls by thermal treatment of a Ni thin film deposited by sputtering onto a stainless steel substrate. The substrate surface area is supposed to be significantly increased by creating nanowalls. The effects on the nanowall morphology of the thermal treatment temperature and duration are investigated. A mechanism based on the surface diffusion of Ni(2+) ions from the Ni?base film is then proposed for the growth of the NiO nanowalls. The as-synthesized NiO nanowalls are characterized by scanning electron microscopy, energy-dispersive x-ray analysis, x-ray diffraction, transmission electron microscopy and high resolution transmission electron microscopy.     

Low substrate temperature synthesis of carbon nanowalls by ultrasonic spray pyrolysis

In this paper, we report the synthesis of two-dimensional wall like carbon nanostructures (i.e. carbon nanowalls) by ultrasonic spray pyrolysis of ethanol and fullerene mixture. At higher temperature carbon nanofibers were formed on the substrate placed at the center of the reactor tube, whereas carbon nanowalls were observed on the substrate placed downstream of the tube below 100 °C. Spaces between the nanowalls changed with distance of the substrates from the furnace. Qualitative analysis of materials was performed using scanning electron microscopy, transmission electron microscopy and Raman spectroscopy.     

Bias-independent growth of carbon nanowalls by microwave electron-cyclotron resonance plasma CVD

The investigations reported here describe the synthesis of carbon nanowalls (CNWs) by microwave electron-cyclotron resonance (ECR) plasma-assisted chemical vapour deposition (PACVD) process without an application of external bias to the substrate during growth. CNWs were grown on silicon (Si) substrates using hydrogen (H₂)/methane (CH₄) plasma at 650°C substrate temperature. Nickel (Ni) was used as a catalyst for the synthesis of CNWs. To the best of our knowledge, this is the first report that describes the bias-independent growth of CNWs using the ECR PACVD process. Formation of CNWs is confirmed by scanning electron microscopy and Raman spectroscopy. The discussion part also includes a possible growth mechanism for CNWs in terms of the role of surface plasmons.     

Catalyst-free template-synthesis of ZnO nanopetals at 60 degrees C

We report successful growth of a new form of ZnO nanostructures, ZnO nanopetals at low temperature. This two-dimensional nanostructure is morphologically different from nanowalls. The flat and circularly edged nanopetals intersect each other. The thickness of nanopetals is uniform and about 30 nm. The nanostructure was produced using a simple catalyst-free chemical method based on anodic aluminum oxide (AAO) template. The growth temperature was 60 degrees C which is much lower than that required for growing ZnO nanowalls. The formation of the nanopetal network was induced by the porous alumina network on the surface of the AAO template.     

Architecting graphene nanowalls on diamond powder surface

Graphene nanowalls (GNWs) have been synthesized on diamond particle surface by a simple heat-treatment process in vacuum induction furnace. The thickness of the as-grown GNWs is in the range of 20–40 nm, and most of the nanowalls are smooth and flat. The growth of GNWs is affected by the type of catalyst and treatment temperature, and the mixed catalytic effect of Fe and Ni is better than Fe or Ni respectively. High-density GNWs was grown on the diamond particle entire surface, when the heat treatment process is performed at 1473 K. Al/diamond composites with high thermal conductivity of 423 W/(m K) was obtained, which was achieved by the formation of large number of GNWs on the diamond particle surface. Systematic analyses reveal that the growth models such as classic precipitation upon cooling (PUC) model are not applicable to explain this kind of GNW’s growth mechanism. Hereby, an extended PUC model is proposed to interpret the GNW’s growth process on diamond surface.     

Initial epitaxial growth of (111) Au/(111) Cu and (111) Cu/(111) Au

The room temperature modes of growth of Au/(111) Cu and Cu/(111) Au are described. For the former growth mode initial deposits (2.4 Å) of gold on copper form smooth flat islands delineated by coincidence lattice misfit dislocations. For 6.0 Å of gold deposit, both thick and thin gold areas were observed with almost complete substrate coverage. For a 10 Å deposit, surface coverage was complete. Strain measurements and dislocation densities obtained on the (111) Au/(111) Cu films suggest the presence of two separate misfit dislocation networks at the interface. The coincidence lattice networks were large enough for transmission electron microscopy observation but contributed little to total overlayer strain. The (van der Merwe) natural lattice misfit dislocations were too closely spaced for direct observation but their presence was inferred because of the strain measurements. The initial epitaxy of Cu/(111) Au was similar to the Stranski-Krastanov model: the initial monolayer of copper (also delineated by coincidence misfit dislocations) grew smoothly on the gold; additional copper formed essentially stress-free “nuclei” on top of the initial copper layer.     

PTCDA on Cu(111) partially covered with NaCl

The organic molecule 3,4,9,10-perylene-tetracarboxylic dianhydride (PTCDA) was studied by means of scanning tunneling microscopy (STM) on thin insulating NaCl films grown on a Cu(111) single crystal. The deposition of approximately two monolayers (ML) of sodium chloride onto a Cu(111) substrate at a sample temperature of about 350 K causes a rather rough growth of (100)-oriented NaCl islands up to a local height of 4 ML. For submonolayer coverages (0.1 and 0.4 ML) of PTCDA on a Cu(111) surface partly covered with NaCl, two different rod structures of PTCDA were found on the copper surface, which are in contrast to previously published data for PTCDA on Cu(111) showing a herringbone-like arrangement. These findings can be explained by the formation of a Na(x)-PTCDA complex. On NaCl covered areas, single PTCDA molecules adsorb at vacancies of [010] and [001] oriented steps of the NaCl(100) islands. In this case, the electrostatic forces between the polar step edges and the PTCDA molecules are dominant. The terraces of the alkali halide surface are free of PTCDA molecules.     

Microwave plasma enhanced chemical vapor deposition diamond synthesis from high carbon content source

To synthesize diamond films by microwave plasma enhanced chemical vapor deposition (MPECVD), the methane concentration (CH₄/H₂)plays a crucial role. It is well-known that there always exists a critical methane concentration (≤0.6%) only below which a good quality diamond film can be obtained. In this study, however, the phenomena of diamond synthesis resulting from high carbon concentration conditions were observed. The molten metals, e.g., Ag, Cu, were used as the deposition substrates on which crystalline diamonds can be achieved from a methane content of CH₄/H₂≥6% or even from solid carbon sources. These results suggest that there may exist a low methane content boundary layer (<0.6%) in the proximity of molten metal surface on which suitable species, CH, CH⁺, H_α and H_β are composed for the diamond nucleation and growth similar to the condition as in the conventional low methane contents. The molten metal inclines to dissolve other forms of carbonaceous materials other than diamond, and thus keeps a much higher steady supply of carbon atoms that enhances the quality as well as the growth rate of the forming diamonds. Received: 23 June 2001 / Accepted: 23 July 2001     

Hierarchical carbon nanostructure design: ultra-long carbon nanofibers decorated with carbon nanotubes

Hierarchical carbon nanostructures based on ultra-long carbon nanofibers (CNF) decorated with carbon nanotubes (CNT) have been prepared using plasma processes. The nickel/carbon composite nanofibers, used as a support for the growth of CNT, were deposited on nanopatterned silicon substrate by a hybrid plasma process, combining magnetron sputtering and plasma-enhanced chemical vapor deposition (PECVD). Transmission electron microscopy revealed the presence of spherical nanoparticles randomly dispersed within the carbon nanofibers. The nickel nanoparticles have been used as a catalyst to initiate the growth of CNT by PECVD at 600°C. After the growth of CNT onto the ultra-long CNF, SEM imaging revealed the formation of hierarchical carbon nanostructures which consist of CNF sheathed with CNTs. Furthermore, we demonstrate that reducing the growth temperature of CNT to less than 500°C leads to the formation of carbon nanowalls on the CNF instead of CNT. This simple fabrication method allows an easy preparation of hierarchical carbon nanostructures over a large surface area, as well as a simple manipulation of such material in order to integrate it into nanodevices.     

Controllable Synthesis of 3D Ni(OH)2 and NiO Nanowalls on Various Substrates for High‐Performance Nanosensors

Large‐area and uniform three‐dimensional (3D) β‐Ni(OH)₂ and NiO nanowalls were synthesized on a variety of rigid and flexible substrates via a simple aqueous chemical deposition process. The β‐Ni(OH)₂ nanowalls consist of single‐crystal Ni(OH)₂ nanosheets that were vertically grown on different substrates. The height, crystallinity, and morphology of the Ni(OH)₂ nanowalls can be readily modified by adjusting the reaction time and concentration of the NiCl₂ solution. The synthesis mechanism of the Ni(OH)₂ nanowalls was determined through heterogeneous nucleation and subsequent oriented crystal growth. 3D NiO nanowalls were obtained by thermal decomposition of the Ni(OH)₂ nanowalls at 400 °C in Ar atmosphere. Highly sensitive, selective gas sensors and electrochemical sensors based on these NiO nanowalls were developed. The chemiresistive gas sensors based on the NiO nanowalls grown on ceramic substrates exhibited an excellent performance with low detection limit for formaldehyde (8 ppb) and NO₂ (15 ppb). The electrochemical sensor based on the NiO nanowalls grown on an FTO glass substrate had a superior selectivity to non‐enzymatic glucose with a detection limit of 200 nm .     

Copper nanowall array grown on bulk Fe-Co-Ni alloy substrate at room temperature as lithium-ion battery current collector

Large-scale copper nanowall array on the bulk Fe-Co-Ni alloy substrate has been prepared in aqueous solution at room temperature via an electroless deposition method. The thickness of the nanowalls is about 15 nm. A possible growth mechanism of the nanowalls was proposed. The effects of reaction temperature, reaction time and the amount of critical agent (Fe³⁺) on the morphology and crystalline phase of the nanowalls were investigated. Furthermore, the electrochemical performance of Sn film supported on the as-prepared copper nanowalls current collector is enhanced in comparison with that on the commercial copper foil when used as anode for Li-ion batteries with the operating voltage window of 0.01-2.0 V (vs. Li). After 20 cycles, the discharge capacity of Sn-Cu nanowalls anode still remained 365.9 mAh g^− 1, that is, 40% retention of the reversible capacity, while the initial charge capacity of Sn film cast on commercial Cu foil was 590 mAh g^− 1, dropping rapidly to 260 mAh g^− 1 only after 10 cycles.     

Co nanoislands on Au(111) and Cu(111) surfaces studied by scanning tunneling microscopy and spectroscopy

Co nanoislands on the Au(111) and Cu(111) surfaces have been studied by scanning tunneling microscopy and spectroscopy. The experimental results showed that Co nanoislands prefer to aggregate at the step edge and dislocation sites on the reconstructed Au(111) surface and at the step edge on the Cu(111) surface, respectively. In addition, based on dZ/dV-V spectra, in both the Co/Au(111) and the Co/Cu(111) systems, Gundlach oscillation was observed. From the peak shift of dZ/dV-V spectra between Co nanoisland and substrate surface, we can quantitatively obtain that the constant energy separation is -0.13 +/- 0.01 eV for the Co/Au(111) system, and 0.41 +/- 0.02 eV for the Co/Cu(111) system, respectively. These values indicate the work function difference between Co nanoisland and these surfaces.     

Chiral‐Selective Formation of 1D Polymers Based on Ullmann‐Type Coupling: The Role of the Metallic Substrate

The chiral‐selective formation of 1D polymers from a prochiral molecule, namely, 6,12‐dibromochrysene in dependence of the type of metal surface is demonstrated by a combined scanning tunneling microscopy and density functional theory study. Deposition of the chosen molecule on Au(111) held at room temperature leads to the formation of a 2D porous molecular network. Upon annealing at 200 °C, an achiral covalently linked polymer is formed on Au(111). On the other hand, a chiral Cu‐coordinated polymer is spontaneously formed upon deposition of the molecules on Cu(111) held at room temperature. Importantly, it is found that the chiral‐selectivity determines the possibility of obtaining graphene nanoribbons (GNRs). On Au(111), upon annealing at 350 °C or higher cyclo‐dehydrogenation occurs transforming the achiral polymer into a GNR. In contrast, the chiral coordination polymer on Cu(111) cannot be converted into a GNR.