Investigation of the optimum alternate-phase RZ modulation format and its effectiveness in the suppression of intrachannel nonlinear distortion in 40-Gbit/s transmission over standard single-mode fiber

The results of a detailed study of the performance of 40-Gbit/s optical transmission over standard single-mode fiber with alternate-phase return-to-zero (AP-RZ) modulation formats are presented. While in the highly dispersed propagation regime, the use of RZ format signals with alternate phase between adjacent pulses can lead to a significant reduction in nonlinear interaction between pulses, allowing increased launch powers and, hence, increased transmission distances, this has not been systematically investigated. In this paper, we investigate the use of AP-RZ formats, both numerically and experimentally, to explain and quantify the effects of varying the peak-to-peak phase modulation, the amount of precompensation at the transmitter and the presence of multiplexer prefiltering for the case of wavelength-division multiplexing systems with high spectral efficiency. It is shown that, while the use of pulses with alternate /spl pi//2 rad phase shifts minimizes the build-up of shadow pulses in the zero bit slots due to intrachannel four-wave mixing, the best overall performance is obtained with /spl pi/ rad peak-to-peak phase modulation. We show experimentally, for the first time, that the optimum value of precompensation to minimize intrachannel nonlinear distortion is dependent on the signal format used.     

Numerical analysis of /spl alpha/ parameters and extinction ratios in InGaAsP-InP optical modulators

The /spl alpha/ parameters and extinction ratios of InGaAsP-InP electroabsorption (EA) modulators and Mach-Zehnder (MZ) modulators are theoretically investigated. The bound states of excitons in quantum wells (QWs) under electric field are calculated through the finite-difference method, and quasi-bound states are obtained by the transfer-matrix method. Reducing the heights of the potential barriers of the QWs is prerequisite to achieving small values of the /spl alpha/ parameter for EA modulators and low driving voltages for MZ modulators. Bulk EA modulators are shown to inherently have relatively small /spl alpha/ parameters; however, they also require a tradeoff between the extinction ratio and the insertion loss. The /spl alpha/ parameters of symmetrical and /spl pi/-phase-shifted MZ modulators in the single- and dual-drive cases are also discussed.     

The impact of LOC structures on 670-nm (Al)GaInP high-power lasers

We investigate the potential of large optical cavity (LOC)-laser structures for AlGaInP high-power lasers. For that we study large series of broad area lasers with varying waveguide widths to obtain statistically relevant data. We study in detail I/sub th/, /spl alpha//sub i/, /spl eta//sub i/, and P/sub max/, and analyze above-threshold behavior including temperature stability and leakage current. We got as expected for LOC structures minimal /spl alpha//sub i//spl les/1 cm/sup -1/ resulting in /spl eta//sup d/=1.1 W/A for 64/spl times/2000 /spl mu/m/sup 2/ uncoated devices. We obtain total output powers /spl ges/3.2 W (qCW) and /spl ges/1.5 W (CW) at 20/spl deg/C.     

Wafer level reliability and lifetime analysis of InGaAsP/InP quantum-well Fabry-Perot laser diode

This paper investigated the reliability of semiconductor 1.3-/spl mu/m multiquantum-well (MQW) Fabry-Perot laser diodes (LDs) in a quarter 2-in wafer level that are measured to have uniform threshold currents, slope efficiencies, and wavelengths within 4% of the maximum deviation. By performing the accelerated aging test under a constant optical power of 3 mW at 85/spl deg/C for 2100 h, the lifetime of the fabricated optoelectronic devices was estimated, where the failure rate was matched on the fitted line of the lognormal distribution model resulting in the mean-time-to-failure (MTTF) of 2/spl times/10/sup 6/ h operating at room temperature.     

Ultrafast semiconductor-based fiber laser sources

In this paper, a novel ring laser platform is presented that uses a single active element, a semiconductor optical amplifier (SOA), to provide both gain and gain modulation in the optical cavity. Gain modulation is achieved by an externally introduced optical pulsed signal. This signal periodically saturates the amplifier gain and forces the ring laser to mode lock. Using this laser platform, we demonstrate picosecond pulsetrain generation at repetition rates up to 40 GHz, either in single or multiwavelength operation mode. In particular, using rational harmonic mode locking, 2.5-ps pulses were obtained up to a 40-GHz repetition rate, while output pulses and output power were constant over a 20-nm tuning range. In addition, a multiwavelength optical signal was obtained using the same laser platform with the addition of a Fabry-Pe/spl acute/rot filter for comb generation. Multiwavelength oscillation is possible due to the broad gain spectrum of the SOA used and its inhomogeneous line broadening. To this end, 48 oscillating wavelengths were obtained at the laser output, with 50-GHz line spacing. Combining both modes of operation, it was possible to mode lock the oscillating multiwavelength signal and to obtain at the output ten wavelength channels, simultaneously mode locked at a 30-GHz repetition rate. The mode-locked channels are temporarily synchronized and exhibit almost identical spectral and time characteristics.     

Total reflection X-ray fluorescence spectrometry for the introduction of novel materials in clean-room production environments

In this paper, a number of case studies on the analysis of novel metallic contaminants on conventional and alternative substrates using the technique of total reflection X-ray fluorescence spectrometry (TXRF) is presented. Investigated materials include Si and Ge substrates, high-/spl kappa/ dielectric contaminants, and layers, and Si wafers contaminated with elements from metal gates and Cu interconnects. One focus is on the application and optimization of detection limits in direct TXRF. For the TXRF analysis of contaminants on Si wafers, a general conclusion is that a combination of three excitation sources is needed to cover the whole range of interest: a low-energy excitation (about 5 keV, e.g., WM/spl alpha/, Cr K/spl alpha/) for the low Z elements such as Na, Mg, and Al, a moderate-energy excitation (10-20 keV, e.g., WL/spl beta/, MoK/spl alpha/) for the 3d-transition elements, and a high-energy excitation (25-35 keV, e.g., W, continuum) for the analysis of elements such as Zr, Ru, Mo, and Pd. Also, for the analysis of novel substrates using direct TXRF, a careful selection of the excitation source results in better detection limits. In this way, detection limits at 10/sup 10/-10/sup 11/ at/cm/sup 2/ can be achieved, even for novel contaminants and substrates. As the International Technology Roadmap for Semiconductors (ITRS) requires control below 5/spl times/10/sup 9/ at/cm/sup 2/, the application of a preconcentration procedure such as vapor phase decomposition-droplet collection TXRF (VPD-DC-TXRF) is required. Proper use of this procedure allows the improvement of the detection limits by two to three orders of magnitude, depending on wafer size and chemical collection efficiency. The usability of this preconcentration procedure in combination with TXRF will be demonstrated for noble elements and germanium substrates.     

Modeling and measurements of the radiative characteristics of high-power /spl alpha/-DFB lasers

A new above-threshold model of /spl alpha/-DFB lasers is presented. It is based on a generalized beam-propagation method and takes into account spatial hole burning and self-heating effects. Up to moderate output powers, a good agreement between simulated and measured radiative characteristics is obtained. The theoretical model was used to design an optimized laser structure with a 4-mm-long cavity, which yielded a maximum output power of 3 W with a times-diffraction-limit factor of M/sup 2//spl ap/3.     

High power water switches: postbreakdown phenomena and dielectric recovery

The physical processes following the electrical breakdown of water between planar and hemispherical electrodes separated by a sub-millimeter gap have been studied using electrical and optical diagnostics. The expanding plasma column after breakdown generates first shockwaves and at a later stage a vapor bubble which expands for about 200 /spl mu/s and then decays with a time constant of I ms. The bubble decay time determines the dielectric recovery of the switch as has been shown with pulse-probe experiments.     

High-power/high-brightness diode-pumped 1.9-/spl mu/m thulium and resonantly pumped 2.1-/spl mu/m holmium lasers

We report high power (>36 W) with beam propagation factor M/sup 2//spl sim/2 in a diode end-pumped Tm:LiYF/sub 4/ (Tm:YLF) laser generating output near the 1.91-/spl mu/m region. Using the 1.91-/spl mu/m emission and high brightness achieved with the Tm:YLF laser we resonantly end-pump the Holmium /sup 5/I/sub 7/ manifold in Ho:YAG and demonstrate /spl sim/19 W of continuous-wave (CW) output. The diode-to-Holmium optical to-optical conversion efficiency achieved is /spl sim/18%. Using a CW pumped and repetitively Q-switched configuration, the Tm:YLF pumped Ho:YAG laser achieves >16 W of output power with an M/sup 2//spl sim/1.48 at 15 kHz. A Q-switched frequency range of 9 to >50 kHz is also achieved.     

Noise figure of parametric wavelength conversion with quasi-phase-matched LiNbO/sub 3/ waveguide

An analytical model of the noise accumulation in a chain of parametric wavelength converters is proposed. Signal-to-noise electrical power ratio is analytically given as a function of node number k in a chained transparent node system that consists of optical amplifiers, parametric wavelength converters, and several loss elements including optical transmission fiber with parameters of pump light excess noise /spl beta//sub p/, and average photon numbers per unit time of pump light and input signal , and , respectively, and spontaneous emission factor of optical amplifier n/sub sp/. The signal-to-noise degrades inversely proportional to node number k with the coefficient defined by NF/sup (1)/=2n/sub sp/+/spl beta//sub p// when k is lower than /Bo, where B/sub o/ represents optical bandwidth. The noise figure dependence on pump light quality /spl beta//sub p// and average photon number of input light in a single stage configuration are experimentally evaluated using Er-doped fiber amplifiers and quasi-phase-matched lithium niobate waveguide parametric wavelength conversion.     

Impact of high-/spl kappa/ dielectric HfO/sub 2/ on the mobility and device performance of sub-100-nm nMOSFETs

Scaling of Si MOSFETs beyond the 90-nm technology node requires performance boosters in order to satisfy the International Technology Roadmap for Semiconductors requirements for drive current in high-performance transistors. Amongst the preferred near term solutions are transport enhanced FETs utilizing strained Si (SSi) channels. Additionally, high-/spl kappa/ dielectrics are expected to replace SiO/sub 2/ around or after the 45-nm node to reduce the gate leakage current problem, facilitating further scaling. However, aside from the many technological issues such as trapped charge and partial crystallization of the dielectric, both of which are major issues limiting the reliability and device performance of devices employing high-/spl kappa/ gate stacks, a fundamental drawback of MOSFETs with high-/spl kappa/ dielectrics is the mobility degradation due to strong soft optical phonon scattering. In this work we study the impact of soft optical phonon scattering on the mobility and device performance of conventional and strained Si n-MOSFETs with high-/spl kappa/ dielectrics using a self-consistent Poisson Ensemble Monte Carlo device simulator, with effective gate lengths of 67 and 25-nm. Additionally we have also briefly investigated the effect (the percentage change) that a trapped charge within the gate oxide will have on the drive current for both a SiO/sub 2/ oxide and an equivalent oxide thickness of high-/spl kappa/ dielectric.     

Integrated optical 2 /spl times/ 2 switch for wavelength multiplexed interconnects

A highly compact integrated optical switch is proposed and demonstrated for broadband optical switching applications. Routing of 8 /spl times/ 10 Gb/s data channels is demonstrated using a low-cost 1250-Mb/s control scheme. The advantages of lossless operation, broad optical bandwidth, and nanosecond switching times are leveraged. Multichannel wavelength is exploited for reduced latency, enhanced capacity, and functionality, while retaining compatibility with existing off-the-shelf electronics and transceiver technology. The requirements for optical header processing, wavelength translation, and optical buffering are avoided. Low-penalty multiwavelength transmission is demonstrated for a highly compact sub-mm/sup 2/ amplifying 2 /spl times/ 2 switch. Pattern dependent gain and amplified spontaneous emission are minimized to facilitate 0.0-0.4 dB penalty. Mitigation techniques compatible with the architecture are deployed to reduce the penalty under adverse operating conditions. Control schemes are proposed and demonstrated to facilitate 8 /spl times/ 10 Gb/s optically switched networking.     

Gimbal-less monolithic silicon actuators for tip-tilt-piston micromirror applications

In this paper, fully monolithic silicon optical scanners are demonstrated with large static optical beam deflection. The main advantage of the scanners is their high speed of operation for both axes: namely, the actuators allow static two-axis rotation in addition to pistoning of a micromirror without the need for gimbals or specialized isolation technologies. The basic device is actuated by four orthogonally arranged vertical comb-drive rotators etched in the device layer of an silicon-on-insulator wafer, which are coupled by mechanical linkages and mechanical rotation transformers to a central micromirror. The transformers allow larger static rotations of the micromirror from the comb-drive stroke limited rotation of the actuators, with a magnification of up to 3/spl times/ angle demonstrated. A variety of one-axis and two-axis devices have been successfully fabricated and tested, in all cases with 600-/spl mu/m-diameter micromirrors. One-axis micromirrors achieve static optical beam deflections of >20/spl deg/ and peak-to-peak resonant scanning of >50/spl deg/ in one example at a resonant frequency of 4447 Hz. Many two-axis devices utilizing four rotators were tested, and exhibit >18/spl deg/ of static optical deflection at <150 V, while their lowest resonant frequencies are above 4.5 kHz for both axes. A device which utilizes only three bidirectional rotators for tip-tilt-piston actuation achieves -10/spl deg/ to 10/spl deg/ of optical deflection in all axes, and exhibits minimum resonant frequencies of 4096 and 1890 Hz for rotation and pistoning, respectively. Finally, we discuss the preliminary results in scaling tip-tilt-piston devices down to 0.4 /spl times/ 0.4 mm on a side for high fill-factor optical phased arrays. These array elements include bonded low-inertia micromirrors which fully cover the actuators to achieve high fill-factor.     

Properties of ion-implanted high-power angled-grating distributed-feedback lasers

An improvement of the linearity of the light-current characteristics and the beam quality of high-power /spl alpha/-distributed feedback lasers is achieved by an ion implantation of the regions outside the contact stripe. The linear part of the light-current characteristics of 4-mm-long devices emitting at 1060 nm is extended to P=1.8 W output power. The times-diffraction-limit factor M/sup 2/ remains constant, equal to 1.7 over the whole power range. Simulations of the electro-optical behavior reveal that the improvement is achieved by a suppression of optical field components which propagate inside the cavity perpendicular to the facets.     

Experimental study on the intrinsic response, optical and electrical parameters of 1.55-/spl mu/m DFB BH laser diodes during aging tests

This paper reports on an investigation on the light-current, relative intensity noise, and chirp variations of life-tested InGaAsP/InP multiquantum-well buried heterostructure (BH) laser diodes (LDs). The devices have been stressed at highly accelerated aging conditions (I=170 mA, T=140/spl deg/C for 3000 h). Typically, the operating current at constant output optical power (I/sub op/) increases logarithmically with time in stable devices while the noise resonance frequency remains stable. High-frequency RF signal-induced chirp for relative stable LDs at constant output power shows very little change with time.     

Analysis of relaxation parameters and their distributions using fractional polarization thermally stimulated discharge currents

It is shown that, in the analysis of fractional polarization thermally stimulated depolarisation current, the values obtained for the activation energy W and the preexponential factor /spl tau//sub 0/ depend on which one is assumed constant. The elemental peak position and shape change significantly for simulations where we assume that the activation energy is variable and the preexponential factor is constant, or vice-versa. A mathematical expression for the current is proposed in the case where W /spl tau//sub 0/ and are both variable. The uncertainties affecting the relaxation parameters produce a broadening of the theoretical peak. The minimum uncertainties in the relaxation parameters are estimated. For a current peak at temperature T/sub m/, a calculated distribution of W with width /spl ap/ kTm, or a calculated distribution of /spl tau/ with width /spl ap/ /spl tau//sub 0/ is physically meaningless.     

Reliability of pFET EEPROM with 70-/spl Aring/ tunnel oxide manufactured in generic logic CMOS Processes

We investigate the reliability of pFET-based EEPROMs with 70-/spl Aring/ tunneling oxides fabricated in standard foundry 0.35-/spl mu/m, 0.25-/spl mu/m, and 0.18-/spl mu/m logic CMOS processes. The floating-gate memory cell uses Fowler-Nordheim tunneling erase and impact-ionization generated hot-electron injection for programming. We show that charge leakage is dominated by the leakage through interlayer dielectrics. We propose a retention model and show the data retention lifetime exceeds 10 years. These results demonstrate the feasibility of producing nonvolatile memory using standard logic processes that have a 70-/spl Aring/ oxide.     

40-Gb/s Widely Tunable Transceivers

We present the first monolithic widely tunable 40-Gb/s transceivers. The devices integrate sampled grating distributed Bragg reflector (SG-DBR) lasers, quantum-well electroabsorption modulators (EAM), low-confinement semiconductor optical amplifiers (SOA), and uni-traveling carrier (UTC) photodiodes for state-of-the-art light generation, modulation, amplification, and detection. A relatively simple high-flexibility fabrication scheme combining quantum-well intermixing (QWI) and blanket metal-organic chemical vapor deposition (MOCVD) regrowth was used to integrate components with performance rivaling optimized discrete devices. The SG-DBR/EAM transmitters demonstrate 30 nm of tuning, 39-GHz bandwidth, low-drive voltage, and low power penalty 40-Gb/s transmission through 2.3 km of fiber. The SOA/UTC photodetector receivers provide 23-28 dB of gain, saturation powers up to 18.6 dBm, and -20.2 dBm of chip-coupled sensitivity at 40 Gb/s. By connecting the transmitters and receivers off-chip, we demonstrate 40-Gb/s wavelength conversion     

Laser-activated shape memory polymer microactuator for thrombus removal following ischemic stroke: preliminary in vitro analysis

Due to the narrow (3-h) treatment window for effective use of the thrombolytic drug recombinant tissue-type plasminogen activator (rt-PA), there is a need to develop alternative treatments for ischemic stroke. We are developing an intravascular device for mechanical thrombus removal using shape memory polymer (SMP). We propose to deliver the SMP microactuator in its secondary straight rod form (length=4 cm, diameter=350 /spl mu/m) through a catheter distal to the vascular occlusion. The microactuator, which is mounted on the end of an optical fiber, is then transformed into its primary corkscrew shape by laser heating (diode laser, /spl lambda/=800 nm) above its soft-phase glass transition temperature (T/sub gs/=55/spl deg/C). Once deployed, the microactuator is retracted, and the captured thrombus is removed to restore blood flow. The SMP is doped with indocyanine green (ICG) dye to increase absorption of the laser light. Successful deployment of the microactuator depends on the optical properties of the ICG-doped SMP, as well as the optical coupling efficiency of the interface between the optical fiber and the SMP. Spectrophotometry, thermal imaging, and computer simulation aided the initial design effort and continue to be useful tools for optimization of the dye concentration and laser power. Thermomechanical testing was performed to characterize the elastic modulus of the SMP. We have demonstrated laser activation of the SMP microactuator in air at room temperature, suggesting this concept is a promising therapeutic alternative to rt-PA.     

Long-wavelength vertical-cavity surface-emitting lasers on InP with lattice matched AlGaInAs-InP DBR grown by MOCVD

1.3- and 1.55-/spl mu/m vertical-cavity surface-emitting lasers (VCSELs) on InP have been realized. High-reflectivity AlGaInAs-InP lattice matched distributed Bragg reflectors (DBRs) were grown on InP substrates. 1.7 (for 1.3 /spl mu/m) and 2.0 (for 1.55 /spl mu/m) mW single mode power at 25/spl deg/C, 0.6 mW single mode power at 85/spl deg/C and lasing operation at >100/spl deg/C have been achieved. 10 Gbit/s error free transmissions through 10 km standard single mode fiber for 1.3-/spl mu/m VCSELs, and through 15 km nonzero dispersion shift fiber for 1.55-/spl mu/m VCSELs, have been demonstrated. With the addition of an SOA, 100 km error free transmission at 10 Gbit/s also has been demonstrated through a negative dispersion fiber. No degradation has been observed after over 2500-h aging test.