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1.
The deposition of the condensed phase YBa2Cu3O7–x from a gas mixture composed of YCl3, BaCl2, Cu3Cl3, and Ar reacting with another consisting of O2 and Ar in a flow system at elevated temperatures was investigated by means of the virtual equilibrium model, and the deposition rates were computed as a function of input gas stream compositions. The optimum growth conditions were identified.  相似文献   

2.
The paraconductivity of Li-doped YBa2Cu3O7–x was measured. We have found that the character of the fluctuation changes as lithium content increases: instead of a crossover from 2D to 3D behavior (D is the dimensionality), as we have observed for a low doping level, a double crossover to the 2D percolative and 3D percolative regimes becomes manifest by increasing the lithium content.  相似文献   

3.
We studied the YBa2Cu3O7 – x bulk superconductor doped with BaZrO3 up to 50 wt.%, obtained by solid-state reaction powder technology. From DC magnetization loops and low frequency AC susceptibility measurements we determined the influence of the BaZrO3 doping level on the critical temperature, critical current density, field for full penetration, and intergrain lower critical field. The results show that even high content of BaZrO3 does not lead to degradation of the superconducting properties of bulk YBa2Cu3O7 – x .  相似文献   

4.
The effect of thermal and epithermal neutron irradiation on the superconducting critical temperature and critical current density of some Li-doped YBa2Cu3O7–x samples was studied. The critical temperature exhibits a peak and the critical current density a valley in their dependence on neutron fluence, for moderate dose. A simple model, based on the Van Hove scenario and the kinetics of the defect production, is used to describe both phenomena.  相似文献   

5.
The optical conductivity sum rule is used to examine the evolution of the spectral weight N() in both the normal and superconducting states of optimally and underdoped YBa2Cu3O6+x along the a axis. Differences in N() above and below T c allow the strength of the superconducting condensate s to be determined. In the optimally-doped material, s is fully formed at energies comparable to the full superconducting gap maximum (0.1 eV), while in the underdoped material the energy scale for convergence is considerably higher (0.6 eV). This difference is discussed in terms of normal-state properties.  相似文献   

6.
Detailed transmission electron microscopic study has been carried out on heteroepitaxial YBa2Cu3O7/SrTiO3/YBa2Cu3O7 trilayer thin films grown on (100)SrTiO3 substrates prepared by DC and RF magnetron sputtering. The microstructural results showed the existence of somea-axis-oriented YBCO grains 20–90 nm wide in thec-axis-oriented YBCO matrix. Some of thea-axis grains in the lower YBCO thin film layer have protruded into the above SrTiO3 layer, which may cause short circuit between the two YBCO superconducting layers. This is unsuitable for the application of trilayer thin films for microelectronic devices. The defects on the surface of the substrates would also influence the growth quality of the YBCO thin films.  相似文献   

7.
We present Raman scattering studies ofc-oriented ultrathin-layer superconducting (YBa2Cu3O7) m /(PrBa2Cu3O7) n superlattices. For the superlattice with (m=2,n=1) sequence, Raman spectra reveal a new line in the spectral region around 320 cm–1. It is interpreted as a mode representing a combination of IR optical phonons of the Y-sublayers with an admixture of aB 1g type Raman active vibration in the Pr sublayers. This new line, which is similar to those from the interior of the Brillouin zone of the original lattice, does not exhibit superconductivity-induced self-energy effects, although its counterpart in the pure substance does. No additional line is found in the (m=1,n=2) superlattice in the same region, supporting our interpretation for the (m=2,n=1) sample.  相似文献   

8.
The charge-transfer hypothesis is shown to be inconsistent with data for YBa2Cu3Ox: (i) The two-step behavior ofT c(x) (with jumps from zero to 60 K and then to 90 K) is not reflected as a similar, statistically significant two-step behavior in the bond-valence-sum charge of cuprate-plane Cu ions (as once believed), (ii) as a consequence of the law of conservation of charge, the derivatives of the layer charges with respect to oxygen contentx for both the Ba-O layers and the charge-reservoir Cu-O chains have the opposite signs to those predicted, and (iii) the charge-transfer observed for superconducting YBa2Cu3Ox is not sufficient to produce superconductivity, as demonstrated by insulating PrBa2Cu3Ox, which has virtually the same layer charges.  相似文献   

9.
Fabrication of high-T c ceramic superconductor in the system Y2O3-BaO-CuO by melting a mixture of component oxides has been investigated. The compositions of the resulting specimens and the effects of heat treatment have been investigated. It was determined that molten material was composed of phases including BaCuO2, CuO, Y2O3, and Y2BaCuO5. A subsequent heat treatment in air produced a nominal amount of the high-T c phase, while heat treatment in an O2 atmosphere resulted in a significantly large percentage of the superconducting phase.  相似文献   

10.
In the first part of this paper the results of X-ray and neutron diffraction studies of the structural aspects related to oxygen insertion in the CuO x planes of YBa2Cu3O6+x compounds are presented. The second part is devoted to the inelastic neutron scattering study of the spin dynamics in the three regimes (weakly doped, heavily doped, and overdoped) of the metallic phases of YBa2Cu3O6+x .  相似文献   

11.
We have investigated the superconducting behavior of high-T c YBa2Cu3O7 (YBCO) thin films containing BaO impure phase produced by pulsed laser deposition. The thin films were characterized by the standard four-probe method, X-ray diffraction (XRD), and scanning electron microscopy (SEM). XRD showed that all these thin films contained BaO impurity, with thec-axis normal to the surface of the substrates. The presence of impurity existed from substrate temperatureT s of 727 to 796°C. When these thin films with BaO impurity were measured under the magnetic fields, it was found that the critical current densityJ c increased slightly with increase in magnetic fieldB within the range ofB500 G, in the case ofB perpendicular to thec-axis of the film.  相似文献   

12.
We report on measurements of the tunneling conductance structures above the superconducting gap energy using YBa2Cu3O7 polycrystalline junctions. The measured second derivative data are reproducible among the junctions, and the intensities of the common structures at the biases of 37–38, 47–53, 67–77, and 94–95 mV are strong enough to be assigned. These structures are in agreement with those in the neutron phonon density of states in whole energy regions when the energies are measured from the gap edge of 26±1 meV. This correspondence indicates that the electron-phonon interaction contributes to the pairing mechanism of this superconductor.  相似文献   

13.
Nanocrystalline Nd2(Zr1 − xSnx)2O7 series solid solutions were prepared by a convenient salt-assisted combustion process using glycine as fuel. The samples were characterized by X-ray diffraction, Fourier transform infrared spectroscopy, Raman spectroscopy, transmission electron microscopy and high-resolution transmission electron microscopy. The results showed the Zr ion can be partially replaced by Sn ion. The partial substituted products were still single-phase solid solutions and the crystal form remained unchanged. TEM images reveal that the products are composed of well-dispersed square-shaped nanocrystals. The method provides a convenient and low-cost route for the synthesis of nanostructures of oxide materials.  相似文献   

14.
For many years it was believed that NMR on the YBa2Cu3O6+y family of superconductors does not support charge density variations or stripes. We discuss the NMR data of YBa2Cu3O6+y (y > 0.63) and show that large charge density variations are actually necessary in order to explain the data.  相似文献   

15.
The post-annealing method of producing thin films of YBa2Cu3O7 (YBCO) has taken on a new impetus due to the recent work showing that films of the highest quality can be made by using low partial pressures of oxygen during the annealing cycle. Here it is shown that for films produced by using BaF2 as a source material, the post-annealing procedure can be closely controlled by monitoring the F that evolves due to the water vapor reaction with BaF2. The use of an ion-sensitive electrode allowed small F evolution rates (about 1 ng s–1) to be detected above background, sufficient to measure the F evolution rate from even the smallest samples used. The time interval during which F evolves was found to increase with increasing YBCO film area being annealed.  相似文献   

16.
Bicrystal Si(BiSi) substrates for grain boundary (GB) Josephson junctions (GBJJs) have been fabricated by a direct bonding technique using a hot press method. The fracture strength and structure of the bonding interfaces were investigated to obtain substrates suitable for the junctions. It was found that an increase in the pressure of the hot press improves the reproducibility of the GBJJs. YBa2Cu3O7 − y GBJJs were successfully fabricated on Bi-Si substrates with a misorientation angle of 15 ° bonded under a pressure of 90 kgf cm−2 at 1200 °C in a vacuum of ≈10−3 Pa. These junctions showed typical I-V curves described by the RSJ model. The Shapiro steps induced by millimetre wave irradiation of 101 GHz were clearly observed in the I-V curves up to 3 mV, corresponding to at least 1.5 THz (, where e is the unit charge, V the voltage and h Planck's constant).  相似文献   

17.
The electric transport of the charged particles in a spin texture was investigated in a strongly underdoped YBa2Cu3O6.25 single crystal in order to identify the characteristic electrical transport mechanism. The in-plane resistivity revealed three different regimes of charge transport: a chiral 2D VRH regime up to 55 K with a characteristic temperature T d 12,400 K, an impurity band conduction regime above 55 K, and a metallic-like regime beyond 170 K. The out-of-plane resistivity has only one crossover at 115 K, but the conduction mechanisms controlling the two regimes are not clear.  相似文献   

18.
Progress in the fabrication of epitaxial, high-J c, biaxially aligned YBCO thick films on Rolling-assisted biaxially textured substrates (RABiTs) is reported. RABiT substrates comprise a biaxially textured metal substrate with epitaxial oxide buffer layers suitable for growth of superconductors. Oxide buffer layers have been deposited using three techniques: laser ablation, electron-beam evaporation, and sputtering. Epitaxial YBCO films grown using laser ablation on such substrates have critical current densities approaching 3 × 106 A/cm2 at 77 K in zero field and have field dependences similar to epitaxial films on single crystal ceramic substrates. Critical current densities in excess of 0.2 MA/cm2 have been obtained on stronger, nonmagnetic substrates. In addition, samples with J e of 12.5 kA/cm2 at 77 K have been fabricated. The highest strain tolerence obtained so far is 0.7% in compression and 0.25% in tension. Deposited conductors made using this technique offer a potential route for the fabrication of long lengths of high-J c wire capable of carrying high currents in high magnetic fields and at elevated temperatures.  相似文献   

19.
PrBa2Cu3O7 superconducts, provided Pr is kept off Ba-sites — experimentally confirming the prediction of the oxygen model and indicating that superconductivity originates in the chains, not in the planes.  相似文献   

20.
Our technique of reactive thermal co-evaporation has been extended to fabricate large films (up to 4 in.) of YBa2Cu3O7 with high quality. A rotating substrate holder is used to separate the deposition and oxidation processes. This allows free access of the metal vapors. As large substrate wafers we use Al2O3, Si, and GaAs with buffer layers of CeO2, YSZ, and MgO, respectively. On all substrates, the uniformity of thickness and composition was better than 2%. Inductively measuredT c andj c (77 K) were 87.5±0.2 K and >1×106 A/cm2, respectively, across the full wafer area. This holds also for GaAs substrates due to a new procedure of capping by Si3N4.This work was supported by the German Bundesminister für Forschung und Technologie.  相似文献   

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