共查询到16条相似文献,搜索用时 93 毫秒
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基于UV光照的圆片直接键合技术 总被引:1,自引:1,他引:1
研究了UV辅助活化与湿化学清洗活化相结合的圆片直接键合技术,并利用红外测试系统、单轴拉伸测试仪和场发射扫描电子显微镜,结合恒温恒湿实验、高低温循环实验对键合质量进行了测试.结果表明,采用该技术可以实现较好的圆片直接键合,提高键合强度,控制合适的UV光照时间可以获得更高的强度,对键合硅片进行恒温恒湿和高低温交变循环处理后,硅片仍能保持较高的键合强度.因此,该工艺对于改进圆片直接键合技术是行之有效的,具有很大的应用潜力. 相似文献
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硅直接键合工艺对晶片平整度的要求 总被引:1,自引:0,他引:1
本文用弹性力学近似,给出了键合工艺对硅片表面平整度的定量要求以及沾污粒子与孔洞大小洞的关系,并用X射线双晶衍射技术和红外透射图象对键合硅片进行了实验研究。 相似文献
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简要介绍了晶圆键合技术在发光二极管(LED)应用中的研究背景,分别论述了常用的黏合剂键合技术、金属键合技术和直接键合技术在高亮度垂直LED制备中的研究现状,包括它们的材料组成和作用、工艺步骤和参数以及优缺点.其中,黏合剂键合是一种低温键合技术,且易于应用、成本低、引入应力小,但可靠性较差;金属键合技术能提供高热导、高电导的稳定键合界面,与后续工艺兼容性好,但键合温度高,引入应力大,易造成晶圆损伤;表面活化直接键合技术能实现室温键合,降低由于不同材料间热失配带来的负面影响,但键合良率有待提高. 相似文献
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A reliable copper wafer bonding process condition, which provides strong bonding at low bonding temperature with a short bonding
duration and does not affect the device structure, is desirable for future three-dimensional (3-D) integration applications.
In this review paper, the effects of different process parameters on the quality of blanket copper wafer bonding are reviewed
and summarized. An overall view of copper wafer bonding for different bonding parameters, including pressure, temperature,
duration, clean techniques, and anneal option, can be established. To achieve excellent copper wafer bonding results, 400°C
bonding for 30 min. followed by 30 min. nitrogen anneal or 350°C bonding for 30 min. followed by 60 min. anneal bonding is
necessary. In addition, by meeting the process requirements of future integrated circuit (IC) processes, the best bonding
condition for 3-D integration can be determined. 相似文献
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Ultrathin silicon-on-insulator (SOI) layers of separation by implantation of oxygen (SIMOX) wafers have been transferred onto
thermally oxidized silicon wafers by wafer bonding technology. Due to the technical availability and the complementary nature
of SIMOX and wafer bonding approaches, SIMOX wafer bonding (SWB) solves some of the respective major difficulties faced by
both SIMOX and wafer bonding for device quality ultrathin SOI mass production: the preparation of adequate buried oxide (including
its interfaces) in SIMOX and the uniformly thinning one of the bonded wafers to less than 0.1 μm in wafer bonding. The effect
of positive charges in the oxide on bondability of ultrathin SOI films and possible applications of SWB will also be outlined. 相似文献
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通过实验和理论计算,分析了InP/Si键合过程中,界面热应力的分布情况、影响键合结果的关键应力因素及退火温度的允许范围。分析结果表明,由剪切应力和晶片弯矩决定的界面正应力是晶片中心区域大面积键合失败的主要原因,为保证良好的键合质量,InP/Si键合退火温度应该在300~350℃范围内选取。具体实验验证表明,该理论计算值与实验结果相一致。最后,在300℃退火条件下,很好地实现了2inInP/Si晶片键合,红外图像显示,界面几乎没有空洞和裂隙存在,有效键合面积超过90%。 相似文献