纳米管中极化子量子比特的温度特性

利用求解能量本征方程、幺正变换和变分相结合的方法,研究纳米管中极化子量子比特的温度性质。数值计算结果表明:量子比特内的电子在各个空间点的概率密度均随时间做周期性振荡,不同空间点的概率密度幅值不同,纳米管中心层概率密度幅值最大,管界面处概率密度幅值为零。数值计算结果还表明:温度不改变量子比特的振荡周期随纳米管内径的增大(或外径的减小)而减小的趋势;振荡周期随温度的降低而减小,但是当温度低至晶格振动能量不足以激发实声子时,振荡周期与温度无关;振荡周期随耦合强度的增大而增大。     

量子盘量子比特中电子的概率密度分布的电磁场依赖性

基于Lee-Low-Pines幺正变换,采用Pekar型变分法研究了计及厚度下量子点中强耦合极化子的基态和第一激发态能量本征值和本征函数,在此基础上,以极化子的二能级结构为载体构造了量子点量子比特。数值结果表明:量子比特的概率密度Ψ(ρ,z,t)2分别随磁场的回旋频率ωc、电声子耦合强度α以及量子盘厚度L的增加而减小;概率密度Ψ(ρ,z,t)2随量子盘有效半径R0的增加而增大并呈现近似"Γ型"曲线;概率密度Ψ(ρ,z,t)2随电子横向坐标ρ的变化呈现"正态分布",其形状受到量子盘有效半径R0或厚度L的影响显著;Ψ(ρ,z,t)2随纵向坐标z、时间t和角坐标φ作周期性振荡变化。     

二维和三维量子点量子比特的性质

在电子-体纵光学声子强耦合情况下, 我们采用Pekar类型的变分方法获得了二维和三维抛物势限制的量子点中的电子的基态和第一激发态的本征能量和本征波函数. 在量子点中这样的二能级体系可以作为一个量子比特. 当电子处于基态和第一激发态的叠加态时, 计算了电子态密度的时间演化。得出了电子的几率密度和振荡周期与电子-体纵光学声子耦合强度,量子点的限制长度的关系.     

抛物量子点中的二能级体系

采用Pekar类型的变分方法,在抛物量子点中电子与体纵光学声子（LO）强耦合的条件下,得出了电子的基态,第一激发态的能量及相应的波函数。讨论了电子-声子耦合强度,量子点受限长度对电子在基态∣0〉, 激发态∣1〉,叠加态时的概率密度分布的影响。结果显示叠加态时的概率密度随着电子-声子耦合强度的增加而增大,随着量子点受限长度的减小而增大。该结果对以量子点制备量子比特有重要的指导意义。     

在外场作用下三量子比特量子纠缠演化特性的研究

采用相干态正交化展开方法,对三量子比特的纠缠度影响因素进行了分析研究,并运用数值计算,结合解析解,在光场初态为真空态的相互作用过程中,对三量子比特的纠缠情况进行了研究.分析了三个全同的量子比特纠缠度随光场频率的变化规律以及光场量子比特耦合强度对三量子比特纠缠度的影响.研究结果表明,三量子比特的本征能量和共生纠缠度随光场频率、时间got的演化与耦合强度有关,而三量子比特的本征能量和共生纠缠度随时间gt的演化与耦合强度无关.     

柱形量子点中量子比特的消相干时间

通过求解柱形量子点的能量本征方程,得到极化子的基态和第一激发态的本征能量以及本征波函数,进而根据基态和第一激发态构造一个量子比特。数值计算讨论了消相干时间与色散系数、电子-体纵光学声子耦合强度、柱形量子点的半径及柱高的变化关系。     

库仑场对抛物线性限制势二能级系统量子点量子比特概率密度的影响

在抛物量子点中电子与体纵光学声子强耦合且在库仑场束缚条件下, 应用Pekar变分方法, 得出了电子的基态和第一激发态的本征能量及基态和第一激发态的本征波函数。 以量子点中这样的二能级体系作为一个量子比特。当电子处于基态和第一激发态的叠加态时, 计算出电子在时空中作周期性振荡的概率分布。并且得出了概率分布与库仑场、耦合强度、受限强度的变化关系。     

柱形量子点中强耦合极化子的性质

通过精确求解柱形量子点的能量本征方程,得到极化子的基态本征能量以及本征波函数,进而研究了柱形量子点中极化子的性质.数值计算表明:柱形量子点中极化子的声子平均数随着电子-LO声子耦合强度的增大而增大,并且随着柱形量子点半径(或柱高)的增大而减小。     

盘型量子点中极化子的温度效应

在考虑电子与体纵光学声子强耦合的条件下,通过求解能量本征方程,得出了盘型量子点中电子的基态能量、第一激发态能量及其相应的本征波函数;采用幺正变换和元激发理论方法研究了圆盘型量子点的声子效应,并讨论了温度对量子盘中极化子性质的影响。数值计算表明：在温度较低时,声子不能被激发,温度对能量无影响,当温度较高时,声子能够被激发,且温度愈高,被激发的声子数愈多,极化子能量愈大;结果还表明基态能量随着电子-声子耦合强度的增大而减小,随量子盘半径的增大而减小. 说明量子盘具有明显的量子尺寸效应。     

一维量子点阵列的自旋链上信息传输

基于紧束缚模型的实空间格点组成的一维线性均匀有序的量子点阵列为研究对象,然后利用演化算符的作用使其在量子点阵列的自旋链上进行单量子比特的信息传输。即使用演化算符 使单比特量子态从量子点阵列起始端为多粒子态 传输到末端态为 ,最后在此基础上计算概率来讨论了单量子比特能从起始端的多粒子态 的第一个量子比特完全传输到态 的末端第N个量子比特是可能的。     

The influences of an anisotropic parabolic potential on the quantum dot qubit* Zhao Cui-Lan(赵翠兰), Cai Chun-Yu(蔡春雨), Xiao Jing-Lin(肖景林)?

To study the influence of an anisotropic parabolic potential(APP)on the properties of a quantum dot(QD)qubit,we obtain the eigenenergies and eigenfunctions of the ground and first excited state of an electron,which is strongly coupled to the bulk longitudinal optical(LO)phonons,in a QD under the influence of an APP by the celebrated Lee–Low–Pines(LLP)unitary transformation and the Pekar type variational(PTV)methods.Then,this kind of two-level quantum system can be excogitated to constitute a single qubit.When the electron locates at the superposition state of its related eigenfunctions,we get the time evolution of the electron’s probability density.Finally,the influence of an APP on the QD qubit is investigated.The numerical calculations indicate that the probability density will oscillate periodically and it is a decreasing function of the effective confinement lengths of theAPPindifferentdirections.Whereasitsoscillatoryperiodisanincreasingoneandwilldiminishwithenhancing the electron–phonon(EP)coupling strength.     

Characteristics of strong-coupling bipolaron qubit in two-dimensional quantum dot in electric field

Based on Lee-Low-Pines (LLP) unitary transformation, this article adopts the variational method of the Pekar type and gets the energy and wave functions of the ground state and the first excited state of strong-coupling bipolaron in two-dimensional quantum dot in electric field, thus constructs a bipolaron qubit. The numerical results represent that the time oscillation period T0 of probability density of the two electrons in qubit decreases with the increasing electric field intensity F and dielectric constant ratio of the medium ; the probability density Q of the two electrons in qubit oscillates periodically with the increasing time t; the probability of electron appearing near the center of the quantum dot is larger, while that appearing away from the center of the quantum dot is much smaller.     

Properties of the electron spectrum of a closed two-well spherical quantum dot and evolution of the spectrum with the outer-well width

The theory of the electron spectrum of a closed three-sphere two-well spherical quantum dot is developed and the evolution of the spectrum under variations in the width of the outer spherical well from zero (the steady-state spectrum of a simple closed spherical quantum dot) to infinity (quasi-steady-state spectrum of a simple open spherical quantum dot) is studied. The mechanism of damping of electron states in a closed two-well spherical quantum dot due to the increase in the width of the outer spherical well is considered for the first time. It is established that the physical cause of the transformation of the steady-state spectrum into the quasi-steady-state spectrum is the redistribution of the probabilities that an electron excited to the resonance state of the spherical quantum dot is found in the energy states of the quasi-steady-state band in the entire space of the nanosystem. It is shown that the basic properties of an electron in a simple open spherical quantum dot can be reproduced to any specified accuracy in the model of a closed two-well spherical quantum dot with a sufficiently large width of the outer well. The approach developed here is based on the mathematical formulation of the quantum field theory (the Green’s function method). The approach can serve as a basis for the development of the still lacking theory of quasi-steady-state spectra and the theory of interaction of quasiparticles (electrons, holes) with each other (exciton), as well as with quantum fields (photons) in open multilayered nanosystems.     

The spectrum and properties of the scattering cross section of electrons in open spherical quantum dots

In the effective mass approximation in the model of rectangular potentials, the scattering cross section of electrons in an open spherical quantum dot is calculated for the first time. It is shown that, for such a nanosystem with a barrier of several monolayers, the experimental measurements of the scattering cross section allow adequate identification of the resonance energies and the widths of resonance states in the low-energy region of the quasi-stationary electron spectrum. It is also shown that, for an open spherical quantum dot with a low-strength potential barrier, the adequate spectral parameters of the quasi-stationary spectrum are the generalized resonance energies and widths determined via the probability of an electron being inside the quantum dot.     

杂质对方形量子点基态能和束缚能的影响

用有限差分法求解了二维方形量子点中有 杂质时的量子体系,得到了离散薛定谔方程。对体系中电子处于基态时的能量和杂质的束缚能进行了数值计算,讨论了不同间距的杂质离子对不同尺寸量子点中电子的基态能量和束缚能的影响。计算结果表明：量子点中电子基态能量是杂质位置和量子点尺度的函数;基态能量随着量子点尺度的增加先急剧减小后缓慢增大,最后趋于定值;杂质对电子的束缚能随着量子点尺度的增加而减小;杂质间距越小对量子点基态能影响越大。     

量子点异质结中类氢杂质电子束缚能级的计算

采用球壳结构和渐变有限深谐振子势阱模型,利用镜像电荷的方法分析了不同介电常数下,界面效应对半导体量子点异质结中类氢杂质电子束缚能级的扰动情况.通过计算考虑到杂质对电子的束缚作用前后的电子的基态能,可以看出对于处在弱受限情况下的量子点,异质结厚度在小于10 nm时,界面效应对类氢杂质电子束缚能级的影响明显.当异质结壳层厚度增大的时候,界面效应的影响将逐渐减弱,受扰动的基态能也逐渐减小,最后不同Airy函数零点值所对应的基态能趋向于某一固定值,此时界面效应可以忽略.     

考虑电子与表面光学声子相互作用的极性晶体膜量子比特

基于线性组合算符法和变分法,讨论了极性晶体膜中电子与表面光学声子(SO)耦合强、与体纵光学声子(LO)耦合弱的电子-声子相互作用系统的量子比特及其声子效应.当膜中电子处于基态和第一激发态的叠加态,电子的概率密度在空间做周期性振荡.结果表明振荡周期随耦合强度的增加而减小,随极化子振动频率的增加而增大.考虑电子与SO声子的相互作用,极化子振动频率发生变化,引起电子概率密度发生改变.     

正方体GaAs量子点电子特性的数值自洽求解

采用抛物势作为量子点对电子有效约束势，使用有限差分法对Schrodinger-Poisson方程进行离散化，根据自旋密度泛函，进行数值自洽求解，得到三维正方体GaAs量子点电子总基态能、电子密度等电子特性，并与相同条件(电子数、自旋、尺寸)的二维正方形GaAs量子点的电子密度进行了对比．     

Exciton states in semiconductor spherical nanostructures

The results of theoretical studies of the energy spectra of excitons moving in semiconductor spherical quantum dots are described. The contributions of the kinetic electron and hole energies, the energy of the Coulomb interaction between an electron and hole, and the energy of the polarization interaction between them to the energy spectrum of an exciton in a quantum dot with a spherical (quantum dot)-(insulator medium) interface is analyzed.