共查询到20条相似文献,搜索用时 15 毫秒
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I. M. Filanovsky A. Allam Su Tarn Lim 《Analog Integrated Circuits and Signal Processing》2001,27(3):227-236
Mutual compensation of mobility andthreshold voltage temperature variations mayresult in a zero temperature coefficient (ZTC)bias point of an NMOS transistor. Theconditions under which this effect occurs,stability of this bias point, and thetemperature dependence of the output voltagefor a diode-connected transistor operating inthe vicinity of ZTC point are investigated inthis paper. Some possible applications of thiseffect include temperature sensors with lineardependence of voltage versus temperature, andvoltage and current reference circuits. Thetheory is verified experimentallyinvestigating the temperature behavior of anNMOS transistor realized in 0.35 m CMOSprocess. The design and simulation results ofsimple current and voltage reference circuitsfor implementation in 0.18 m CMOStechnology are given. 相似文献
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基于单片机和CPLD的步进电机细分驱动系统 总被引:2,自引:0,他引:2
介绍了一种采用单片机和CPLD(Complex Programmable Logic Device)实现步进电机细分驱动的方法。利用单片机来设定电机的转速、转向。由CPLD产生阶梯脉冲经过DAC变换,形成阶梯形电压信号以控制步进电机每相绕组在各时刻的电压,从而实现步进电机的细分驱动。采用CPLD大大简化了系统的外围硬件电路结构,提高了系统的抗干扰性能,缩短了步进电机驱动器的设计周期。 相似文献
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基于灰度特征和自适应阈值的虚拟背景提取研究 总被引:1,自引:0,他引:1
针对虚拟背景提取(Visual Background extractor,ViBe)算法在目标检测时容易出现鬼影和运动目标阴影的缺点,该文提出了一种基于灰度特征和自适应阈值的ViBe背景建模改进方法。该算法首先利用ViBe算法进行背景建模,得到前景目标,然后对前景目标进行灰度特征判断和自适应阈值比较,得到没有鬼影和运动目标阴影的运动目标。实验结果表明,改进后的算法可以很好地弥补ViBe算法的不足,提高ViBe算法的识别准确率。 相似文献
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Muhammad Nawaz Wolfgang Molzer Stefan Decker Luis-Felipe Giles Thomas Schulz 《Microelectronics Journal》2007,38(12):1238-1251
A design evaluation is reported for multigate FETs (MuGFETs) by implementing a full process flow using a commercial three-dimensional technology CAD (TCAD) tool within the context of optimizing the device design and underlying fabrication processes. The simulation is based on and refers to the development of the SOI-based 30 nm MuGFET devices. Using our real process flow, various process simulation parameters from diffusion and activation models are first calibrated to the experimental data. Device simulations are then performed with varying fin doping, fin width, fin height, Ldd and halo implant tilt, and box thickness. For a given fin thickness and increasing fin height, the threshold voltage, off-current, delay and short channel effects (SCEs) remain approximately insensitive, while the on-current and transconductance increases approximately linearly with the increase in fin height. On the other hand drain-induced barrier lowering (DIBL), subthreshold slope (S) and off-current IOFF are quite sensitive to the variations in fin width (at fixed fin height). We found that the lower Ldd and halo implant tilt angle (20–30°) are beneficial in reducing the SCEs and off-current. Finally, a comparison of the simulation results with electrical measurement data is presented, which shows fairly good agreement. 相似文献
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晶圆芯片测试,依靠探针触点与芯片电极间的机械接触,实现机-电连接和信号转换,从而完成对器件的电参数测试。该文通过设计和加工微探卡的方式,针对探针与芯片接触触点少导致接地信号采集不完整,影响芯片测试时带内波动、芯片测试与成品测试结果差异大的难题,提出了低损耗声表面波(SAW)滤波器设计结构中模拟焊点引线的方式,通过采集芯片电信号,在频域内做测试,满足晶圆级封装(WLP)、芯片级封装(CSP)等封装工艺的检测要求,鉴别出在芯片粘在外壳前合格的芯片,同时监测参数的分布状态来保持前道工艺的质量水平,反馈芯片的合格率与不良率。 相似文献
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Two SiO_2/Si interface structures,which are described by the double bonded model(DBM) and the bridge oxygen model(BOM),have been theoretically studied via first-principle calculations.First-principle simulations demonstrate that the width of the transition region for the interface structure described by DBM is larger than that for the interface structure described by BOM.Such a difference will result in a difference in the gate leakage current. Tunneling current calculation demonstrates that the SiO_2/Si... 相似文献
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为了设计一款100 V体硅N-LDMOS器件,通过借助Tsuprem-4和Medici软件详细讨论分析了高压N-LDMOS器件衬底浓度、漂移区参数、金属场极板长度等与击穿电压、开态电阻之间的关系,最终得到兼容体硅标准低压CMOS工艺的100 V体硅N-LDMOS最佳结构、工艺参数.折衷考虑到了击穿电压、开态电阻这一对矛盾体以满足设计指标.通过模拟曲线可知该高压器件的关态和开态的击穿电压都达到要求,开启电压为1.5 V,而且完全兼容国内体硅标准低压CMOS工艺,可以很好地应用于各种高压功率集成芯片. 相似文献
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本文基于BSIM标准研究了现代深亚微米级MOSFET器件的建模和特征提取方法,着重在于短沟道效应方面,其中测试样品由MicronTM公司提供,最短沟道长度仅为0.16微米.内容包括一般短沟道效应、基板效应和漏极感应势垒降低效应(简称DIBL效应)等.研究表明,实验数据和BSIM模型结果较好吻合,证明文中方法的有效性以及较好的应用前景. 相似文献
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非对称绝缘层无机EL显示器件是一种新颖的器件结构。成功制备了一批ZnS:Mn器件,其下介质层为厚100-200nm的SrTiO3(ST)或Ba0.5Sr0.5TiO3(BST)或Ta2O5薄膜,上介质层为厚600~1100nm的Ta2O5或ST/Ta2O5或HfO2/Ta2O5/Al2O3薄膜。发现以ST/Ta2O5为上介质层的器件具有适当的阈值电压、较高的L50和较陡的L—V曲线,以HfO2/Ta2O5/Al2O3为上介质层的器件具有较高的可靠性。 相似文献
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基于CSMC0.6μm DPDM CMOS工艺进行设计,利用4个动态闽值NMOS和2个有源电阻实现了一种1.2V低功耗模拟乘法器电路,既节省了输入晶体管数目,又节省了偏置晶体管和偏置电路.1.2V模拟乘法器的输入信号VinA的频率为5MHz,信号峰峰值为1.0V,输入信号VinB的频率为100MHz,信号峰峰值为0.5V时,输出信号Vout的峰峰值为0.35V,一次谐波和三次谐波的差值为40dB.1.2V模拟乘法器输出信号的频带宽度为375MHz,平均电源电流约为30μA,即动态功耗约为36μw,适合于便携式电子产品和带宽要求不太高(400MHz以下)的场合. 相似文献
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BiCMOS技术在通信领域的研究与进展 总被引:4,自引:0,他引:4
为了促进我国通信用高性能电子电路和各种通信ASIC新产品的设计、研制和应用,本文首先论述了性能卓越的BiCMOS技术的先进性,然后讨论了国外流行的两种BiCMOS工艺制作技术及其特殊考虑,以及在通信工程中的应用电路,最后分析了BiCMOS技术在我国高速通信、信息处理电路和系统(如CPU、SRAM、DSP、SOC和数/模混合电路等)中的应用前景和发展趋势。文中提出了运用先进的BiCMOS技术于中国通信电路和系统中的观点。 相似文献