Manufacture and Measurement of Film Thickness Sample for Calibration of Coating Machine

镀膜在国民经济生活中得到广泛应用.影响镀膜性能的一个主要参数是膜层在整个基片上的厚度均匀性.利用挡板在基片上多个区域沉积台阶,测量台阶高度的差值用于分析膜厚的均匀性.通过集成非接触聚焦式测头的纳米测量机进行测量,针对镀膜产品上各个特殊的曲面台阶,以参差平方和为标准,用基底无台阶区域的曲线模型拟合台阶底部曲线,参考ISO 5436-1:2000的台阶评价方法,对镀膜基片上多台阶进行了评价.该方法可以用于镀膜机的验收.     

小靶材实现大平面基片均匀性膜层沉积的方法

常规的实验用磁控溅射设备,其固定的靶基工况,导致膜层均匀性区域有限,只能用于较小基片上膜层的沉积。提出一种新的方法,将靶材固定,基片自转或公自转工位变更为靶材可移动,基片自转的方式,并控制靶材的移动及基片自转速率的调节,可以用较小的靶材在较大平面上沉积膜层,所制备膜层具有良好的膜厚均匀性;建立了计算模型,分析了小靶材实现大平面基片均匀性膜层沉积的途径;在Φ260 mm的平片上进行了Ge膜的实际制备,证实了上述思路的可行性。     

脉冲真空电弧离子源工艺参数对薄膜厚度分布的影响

薄膜厚度的均匀性是影响沉积方法应用的一个重要的因素，利用脉冲真空电弧离子镀技术在Si基片上沉积山类金刚石薄膜，采用轮廓仪对膜的厚度进行了测量，研究服不同工艺参数对薄膜均匀性的影响。实验结果表明：脉冲离子源阴极和基片的距离，主回路工作电压以及沉积频率对薄膜均匀性有不同程度的影响。根据分析结果，找出最佳工艺参数，通过比较两种离子源的结果表明，离子源结构对其镀膜均匀性有较大的影响。     

第十九讲 真空溅射镀膜

<正>(接2016年第4期第80页)(2)膜层沉积不均匀薄膜厚度均匀性是衡量薄膜质量和镀膜装置性能的一项重要指标。任何一种有实际应用价值的薄膜,都对膜厚分布有特定的要求,都要求所镀的膜层厚度尽可能均匀一致,有尽可能好的膜厚均匀性。提高膜厚均匀性有多种方法,比如将溅射靶源和基片放置在合适的位置,采用旋转基片,增加遮挡机构等等。对于磁控溅射镀膜,理想的     

基片的运动方式对磁控溅射矩形靶镀膜均匀性的影响

本文从理论上分析了磁控溅射镀膜中基片的运动方式对沉积薄膜厚度均匀性的影响。在考虑了溅射环内不同位置刻蚀权重的情况下,对静止、直线往复运动(以下简称平动)、平动结合转动、平动结合转动并在折返处停留自旋四种运动方式,根据余弦定律对矩形靶在圆形基片上溅射的膜厚分布进行物理建模和仿真研究,并计算出相应的镀膜均匀度。研究结果表明,相比静止模式,平动时的膜厚均匀性有显著改善,平动结合转动的膜厚均匀性优于平动模式;但在前三种模式下,基片上的膜厚分布均为中心厚,边缘薄。而当采用第四种模式时,膜厚分布不再呈单调下降的趋势,延长停留时间会使膜厚分布发生翻转,变为中间薄、边缘厚,中间存在一个最佳的停留时间使得膜厚均匀性最好。     

平面磁控溅射薄膜厚度均匀性的研究概述

在平面磁控溅射镀膜系统中,薄膜厚度均匀性作为衡量薄膜质量和成膜系统性能的一项重要指标,得到了国内外学者们的广泛研究。本文以膜厚分布的理论模型为出发点,从工艺条件及模型参数两个方面,对靶与基片的位置关系、基片的运动方式、靶材的形状、溅射功率、工作气压、工作模式等各种影响以及改善薄膜厚度均匀性的因素进行了系统的归纳和陈述。最后对平面磁控溅射镀膜系统膜厚分布的研究进展进行总结并提出了展望。     

RF-PECVD制备类金刚石膜的研究

采用RF-PECVD法在锗(Ge)基片上沉积类金刚石(DLC)薄膜,研究了气体流量和气压对沉积区域均匀性的影响,以及基片厚度与沉积时间的关系。用拉曼光谱(Raman)分析DLC膜的结构组成,用傅立叶红外光谱仪(IR)对DLC膜的透过率进行了测量。结果表明,在气体流量为50 sccm,气压为10 Pa,功率800 W条件下薄膜厚度均匀性可达2.1%,极值透过率达62%。     

真空蒸镀氟化镁增透膜的厚度与均匀性控制

基于光学增透膜与真空蒸发镀膜的基本原理,从MgF2原料状态、原料蒸镀质量、蒸发源与基片间距等方面,研究了热电阻和电子束蒸镀的MgF2薄膜厚度与其均匀性的控制工艺,以制备出高效的MgF2增透膜。结果表明:对于颗粒度较小或熔点较低的原料,热电阻比电子束蒸镀更易控制,并可避免原料污染;原料实际蒸镀质量与膜厚呈较好的线性关系;实际蒸镀质量相同的多晶颗粒与粉末状原料相比,前者蒸镀膜更厚;基片置于旋转工转盘中心比其侧部区域蒸镀膜更厚、均匀性更好。最后利用旋转球面夹具的小平面源蒸发模型很好地解释了上述实验结果。     

铁氧体瓷棒真空镀膜技术

表面金属化的铁氧体瓷棒是铁氧体圆极化移相器的关键构件,表面金属化膜层的均匀性是其重要的指标.本文主要研究镀膜工艺、镀膜夹具对镀膜均匀性的影响.采用脉冲宽度经验测试法对铁氧体棒表面镀膜厚度进行测量,采用矢量网络分析仪及自制波导系统组成的测试系统对镀膜的铁氧体棒插入损耗进行测量.结果表明脉冲宽度测试法是一种较好的经验方法,适合于生产中对铁氧体棒表面膜层厚度进行测量;真空蒸发和磁控溅射镀膜的棒体其插入损耗指标没有明显的区别;磁控溅射工艺及夹具系统与真空蒸发工艺及夹具系统相比,更有利于获得较高的镀膜厚度一致性.     

基于遗传算法的Low-E膜系中透明介质膜层均匀性在线分析

本文针对离线Low-E镀膜玻璃生产控制过程中对厚度均匀性的需求,提出依据在线测试膜层膜面反射光谱数据,建立柯西光学模型利用遗传算法分析膜层厚度均匀性的方法。采用的在线光谱测量装置安装于镀膜设备产品出口端,在镀膜玻璃宽度方向可以测量24个位置的380~780nm波长范围。研究表明在分析过程利用各点平均光谱由遗传算法分析获得膜层折射率及平均厚度,针对性地建立膜层材料在特定厚度范围内的颜色与厚度关系,在保证分析结果正确性的同时提高了数据分析效率。     

Effects of step slope on thickness measurement by optical interferometry for opaque thin films

Optical interferometry is a simple, quick and cheap method to measure the thickness of opaque thin films. The film edge, being formed as a step on the sample surface, is lighted with monochromatic light in an interference microscope, producing the interferogram that is recorded with a CCD camera. The film thickness (step height) is calculated by measuring offsets of the fringes across the step. However, the morphology of the film edge (step) significantly affects the thickness measurement, in some cases even yields false results. In this work, three kinds of methods were adopted to mask a part of the substrate surface during the deposition for fabrication of the step. The mask used was a thin silicon slice, a straight line of ink imprinted by a pen, or an Aluminum film. The step morphology recorded by a profilometer revealed large variation from one method to another. Accordingly, the accuracy of film thickness (step height) measurement by interferometry varies significantly. Results showed that large error occurs when the slope of the step is small and the step out spans the view field of the microscope. Therefore, the step should be fully visible in the view field of the microscope for reasonable measurement of thickness. A simple equation, in terms of geometrical configuration, is developed for this requirement.     

On the uniformity of film thickness on rotating spherical substrates on a planar work holder

Curves for the uniformity in film thickness on spherical substrates are drawn for various geometries. The optimum source-to-substrate height for maximum uniformity of the film thickness is determined. These data are approximated to achieve uniform thickness on a large number of small planar substrates loaded on a large spherical substrate holder, the appropriate geometry being selected on the basis of the radius of curvature of the substrate holder.     

多层微纳薄膜的高精度检测技术进展

在半导体、机械加工等行业中广泛应用的多层微纳薄膜通常是由数个纳米厚度的单层膜叠加形成的,在其制造过程中,由于工艺条件所限,薄膜厚度的均匀性会出现误差,进而影响其性能。因此薄膜厚度的准确测量至关重要,亟需一种无损、高精度、快速的检测技术对薄膜的厚度及其均匀性进行测量、检测。回顾近年来多层膜在不同领域的应用现状,分析了目前应用于多层膜厚度测量的技术（如X射线衍射等）及其不足,以及椭圆偏振法技术的研究进展,最后介绍了机器学习在厚度测量中的应用,并对未来机器学习与测量结合的前景进行了展望。     

Development of Cat-CVD apparatus for 1-m-size large-area deposition

Thin film deposition on large-area substrates of 1-m size is demonstrated by catalytic chemical vapor deposition (Cat-CVD) apparatus equipped with a newly developed showerhead catalyzer unit. The arrangement of catalyzer wires for uniform film thickness was determined by simulation, assuming that decomposed species on catalyzers were transported by isotropic thermal diffusion without an influence of the gas flow. A film thickness uniformity of ±7.5% was successfully achieved on a substrate of 400 mm×960 mm at an average deposition rate of 32 nm/min for hydrogenated amorphous silicon (a-Si:H) film. Film thickness uniformity of ±8.6% for a-Si:H film and ±12.3% for silicon nitride film were also successfully obtained on substrates of 680 mm×880 mm size at an average deposition rate of 12.1 and 2.5 nm/min, respectively. These results suggest that Cat-CVD is a promising method for the fabrication of large-area devices such as thin-film-transistor liquid-crystal displays and solar cells.     

磁控溅射制备紧固件防咬死涂层的厚度均匀性研究

为了研究磁约束聚变装置支撑装置紧固件的螺母和螺栓表面防咬死涂层的均匀性,利用磁控溅射技术在管形器件的内表面和外表面制备了铜膜,应用台阶仪进行薄膜厚度测试.采用矩形铜板作为磁控溅射靶,采用单自转和公转加自转两种方式进行沉积,分析了铜膜在管形器件的内表面和外表面的膜厚分布规律.结果表明:无论螺母还是螺栓,公转加自转相对于单...     

倒圆锥面基底蒸发镀膜均匀性理论分析

通过计算得出了蒸发源位于倒圆锥面正下方外部镀膜时锥面上各点的膜厚方程,并对整个锥面上膜厚均匀性进行了理论分析。结果表明：当圆锥面形状固定时,蒸发源与圆锥底圆圆心距离增大使锥面上膜厚均匀性变好;当蒸发源固定时,增大底圆半径导致锥面上膜厚均匀性变差。在同样的配置下,蒸发源为点源或小平面源时锥面上膜厚均匀性的变化趋势一致,小平面源蒸镀比点源蒸镀时圆锥面上膜厚均匀性差。     

离子束溅射淀积光学薄膜的膜厚均匀性实验

介绍了离子束溅射技术改善薄膜均匀性的两种方法。研究了修正板技术,根据工程需要将修正板技术应用于行星转动条件下的光学薄膜的均匀性修正。分别研究了靶摆动和不摆动的情况下,淀积薄膜的均匀性修正。实验结果表明,修正后的均匀性结果优于 1%,能满足实际应用的要求;靶摆动修正的均匀性结果优于修正板技术。     

Substrate geometry effect on the uniformity of amorphous carbon films deposited by unbalanced magnetron sputtering

A chromium doped amorphous carbon (a-C) film was deposited by an unbalanced magnetron sputtering. A special designed double-V shaped stainless steel model in simulating a plastic injection mold gateway was used as the substrate to investigate the geometric effect on the uniformity of the film. It was found that, on both the side wall and bottom plane of the double-V shaped substrate, the film properties strongly depended on a geometric parameter, geometric aspect ratio, defined as the depth over width of the simulated gateway at the points under measurement. With the increase of the aspect ratio, i.e. approaching to the narrow end and/or closer to the bottom plane of the gateway, the film thickness and hardness decreased and the intensity ratio of the Raman sub-bands D over G increased. With the increase of the aspect ratio, the micro hardness of the a-C film decreased far more significantly on the side wall than that on the bottom plane. With increasing working gas pressure, the film thickness decreased consistently, and the hardness uniformity on both the side wall and bottom plane was improved. When the substrate negative bias voltage was changed from −70 to −100 V, the film uniformity (for both the thickness and hardness) was improved on the bottom plane, but degraded on the side wall.     

Fabrication of 3-dimensional PbZr(1-x)Ti(x)O3 nanoscale thin film capacitors for high density ferroelectric random access memory devices

PbZr(x)Ti(1-x)O3 (PZT) thin films were deposited on 3-dimensional (3D) nano-scale trench structures for use in giga-bit density ferroelectric random access memories. PZT thin films were deposited by liquid delivery metalorganic chemical vapor deposition using Pb(thd)2, Zr(MMP)4, and Ti(MMP)4 precursors dissolved in ethyl cyclohexane. Iridium thin films were deposited by atomic layer deposition, and they exhibited excellent properties for capacitor electrodes even at a thickness of 20 nm. The trench capacitor was composed of three layers, viz. Ir/PZT/lr (20/60/20 nm), and had a diameter of 250 nm and a height of 400 nm. Almost 100% step coverage was obtained at a deposition temperature of 530 degrees C. The PZT thin film capacitors with a thickness of 60 nm on a planar structure exhibited a remnant polarization (Pr) of 28 microC/cm2, but the Pr value of the 3D PZT capacitors decreased slightly with decreasing 3D trench pattern size. The transmission electron microscope analysis indicated that the PZT thin films had compositional uniformity in the 3D trench region. Both columnar and granular grains were formed on the sidewalls of the trench capacitors, and their relative proportion exhibited strong size dependence. The trench capacitors with more columnar PZT grains showed good switching behavior under an external bias of 2.1 V and had a remnant polarization of 19-24 microC/cm2.     

纳米氧化铝有序多孔膜制备工艺研究

为了获得大面积有序孔排列以及不同孔径的氧化铝膜,采用二次阳极氧化法可制备大面积有序铝阳极氧化多孔(AAO)膜,着重研究氧化电压、氧化时间、电解液浓度以及扩孔时间对AAO膜孔径大小、膜层厚度和形貌结构的影响,用X射线粉末衍射(XRD)仪进行物相分析,利用扫描电子显微镜(SEM)表征多孔膜的形貌.结果表明,在700 ℃以下条件下AAO膜以无定形态存在,经800 ℃退火后无定形氧化铝转化为γ-Al2O3,多孔膜随电压和电解液浓度增加而增大,经H3PO4溶液扩孔后可获得较大孔径模板,扩孔时间与孔径变化呈近似线性关系.为满足应用需求的AAO膜的制备提供了依据.