雷达成像中基于进退法的鸟类目标运动状态自动判别方法

利用线性调频步进体制高分辨雷达对鸟类目标进行ISAR成像是解决航空安全保障中鸟情探测问题的一个全新且重要的技术途径.为了得到鸟类目标更清晰的像,准确判断其运动状态显得至关重要.基于线性调频步进体制雷达微多普勒效应的产生原理,在距离-慢时间谱图上,针对鸟类目标特性,通过对精高分辨距离像进行分析,提出了一种利用进退法搜索相邻精高分辨距离像的互相关系数的方法来判别鸟类目标运动状态.仿真结果证明了其可行性和有效性.     

基于线性调频步进ISAR参数估计和成像算法研究

本文在建立了线性调频步进ISAR回波信号模型的基础上,对线性调频步进ISAR信号特性进行了分析,指出径向速度和加速度将严重影响线性调频步进ISAR成像;因此,为了得到更好的ISAR图像,本文提出了一种新的基于线性调频步进ISAR的成像方法,充分利用距离时域包络和方位多普勒信息对径向速度和加速度进行精确的估计,同时在数据中对运动参数加以补偿,并最终实现方位多普勒成像;而且,该方法还适用于较低信噪比情况下的ISAR成像;在最后,本文给出了线性调频步进ISAR成像的详细步骤,并用不同信噪比的仿真数据验证了本文所提出方法的可行性。     

线性调频步进体制ISAR相干干扰方法

逆合成孔径雷达(ISAR)是在合成孔径雷达(SAR)技术基础上发展起来的一种新的微波成像雷达体制,是雷达成像的重点发展方向之一.由于其成像是通过对距离向和方位向二维压缩实现,因此比普通雷达具有更强的抗干扰能力.线性调频步进信号由于其独特的优点在成像中占据了重要地位.文中提出了一种利用步进频率信号对线性调频步进信号体制ISAR的相干干扰方法,以较小的功率干扰ISAR成像.     

一种调频步进频雷达高速目标成像的新算法

线性调频子脉冲步进频信号已经在雷达ISAR成像中获得了一定的应用。文中提出了线性调频步进频雷达在低信噪比条件下对高速目标ISAR成像的一种新方法。该方法首先对同频点脉冲应用Keystone变换校正距离走动并进行相参积累以获得高信噪比,从而在较高信噪比下精确估计目标平动速度并有效实施速度补偿,然后通过步进频处理合成距离维高分辨,从而提高了ISAR成像质量。通过理论分析与计算机仿真证明了文中方法的有效性。     

高分辨雷达信号分析与比较

宽带雷达信号可以获得高距离分辨力,如何针对不同的应用场合选择合适的宽带信号就显得十分重要。本文对线性调频信号、步进频率信号和线性调频步进信号这三种高分辨信号作了逐一分析,利用模糊函数讨论了它们的分辨力、距离-多普勒耦合等性能,介绍了每种信号的高分辨处理方法,并且研究了ISAR成像处理时目标运动所产生的影响及其补偿方法。     

基于线性调频信号的ISAR成像仿真

逆合成孔径雷达(ISAR)是一种高分辨率的微波成像系统,它能够对运动目标进行精确成像.现介绍了线性调频信号,论述了ISAR成像的数学模型,并对ISAR成像的原理进行了详细的介绍,然后将线性调频信号应用于ISAR成像模型中,最后建立仿真平台,实现了对目标的成像.     

基于调频率微调的ISAR抗干扰技术研究

逆合成孔径雷达的欺骗式干扰技术日趋成熟,而ISAR抗干扰技术则研究不足。在分析了ISAR有源欺骗式干扰的工作原理基础上,提出了基于线性调频信号调频率微调的ISAR抗干扰方法,使虚假目标回波的增益在Dechirp处理时因调频率失配而被抑制。但在该体制下调频率变化导致信号带宽变化,从而距离分辨率改变,为此提出先进行距离像插值再做ISAR成像。针对距离向插值导致的方位向多普勒模糊问题,采用了多普勒域平均处理提高了ISAR成像质量,以利于目标识别。利用仿真数据对该方法进行了验证,结果证明了该方法的有效性。      

基于线性调频步进信号的高速目标ISAR成像

该文讨论了一种利用线性调频步进(LMSF)雷达信号通过频域带宽合成以进行高距离分辨率逆合成孔径雷达(ISAR)成像的方法。文中建立了高速目标的回波模型。为了精确估计高速运动目标运动参数,给出了利用包络对齐和多普勒中心估计拟合目标运动轨迹的方法。针对ISAR中目标回波的特点,对原始的多普勒中心估计方法进行了改进,提高了运动参数估计精度。最后给出了处理流程,并用仿真结果验证此种方法的有效性。     

线性调频步进信号雷达微动目标成像方法

旋转和振动是最常见的微动形式.目标微动会产生微多普勒效应,微多普勒特征对于目标识别与分类具有重要意义.微多普勒的存在使得目标主体的ISAR像受到污染,严重时无法识别.微多普勒对雷达分辨率极其敏感,因此宽带信号下的微多普勒研究十分必要.在线性调频步进信号体制下,引入相消处理的思想,在精分辨谱图域分离并提取微动目标的微多普勒信息,得到较为清晰的目标ISAR像,仿真验证了方法的有效性.     

强地杂波背景下线性调频信号雷达微多普勒提取新方法

在线性调频信号体制下,针对强地杂波背景下含旋转部件目标ISAR成像问题,提出一种微多普勒信息提取新方法。首先在信号域使用相消技术剔除地杂波,拉伸处理后将相消原理应用于谱图域,从而有效实现了微多普勒信息的分离与提取,并得到了目标较为清晰的ISAR像,通过对3种地物杂波的仿真,验证了其可行性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.