Importance of water content in formation of porous anodic niobium oxide films in hot phosphate-glycerol electrolyte

Niobium has been anodized at a constant current density to 10 V with a current decay in 0.8 mol dm⁻³ K₂HPO₄-glycerol electrolyte containing 0.08-0.65 mass% water at 433 K to develop porous anodic oxide films. The film growth rate is markedly increased when the water content is reduced to 0.08 mass%; a 28 μm-thick porous film is developed in this electrolyte by anodizing for 3.6 ks, while the thickness is 4.6 and 2.6 μm in the electrolytes containing 0.16 and 0.65 mass% water respectively. For all the electrolytes, the film thickness changes approximately linearly with the charge passed during anodizing, indicating that chemical dissolution of the developing oxide is negligible. SIMS depth profiling analysis was carried for anodic films formed in electrolyte containing ∼0.4 mass% water with and without enrichment of H₂¹⁸O. Findings disclose that water in the electrolyte is a predominant source of oxygen in the anodic oxide films. The anodic films formed in the electrolyte containing 0.65 mass% water are practically free from phosphorus species. Reduction in water content increased the incorporation of phosphorus species.     

Growth of porous anodic films on sputtering-deposited aluminium incorporating Al-Hf alloy nanolayers

Formation of porous anodic films on sputtering-deposited aluminium incorporating Al-Hf tracer layers has been examined at constant current in sulphuric and phosphoric acids. Hafnium was selected as the tracer species since the migration rates of Hf⁴⁺ and Al³⁺ ions are similar in barrier-type anodic alumina. The distribution of hafnium in the films was determined using ion beam analysis, scanning electron microscopy and transmission electron microscopy. Increases in the anodizing voltage and barrier layer thickness accompany the oxidation of hafnium and the migration of Hf⁴⁺ ions through the barrier layer region of the porous film. Hf⁴⁺ and Al³⁺ ions that migrate to the pore bases are lost to the electrolyte. Other Hf⁴⁺ ions are incorporated into the cell walls. For films formed in phosphoric acid, with relatively thick barrier layers, channelling of the ion current leads to accelerated outward transport of Hf⁴⁺ ions toward the pore base, while a U-shaped inner edge of the hafnium distribution beneath the pores is associated with more slowly transported hafnium species. The tracer behaviours for films formed in both acids are consistent with the transport of Hf⁴⁺ ions in the barrier layer regions by a combination of flow of film material and ion migration, the flow being a key factor in the development of the pores. The percentage losses of Hf⁴⁺ and Al³⁺ ions from the films to the electrolyte are relatively similar, correlating with their similar migration rates, and contrast with the retention in the film of slow migrating W⁶⁺ ions, found previously, due to a more dominant role of flow.     

Formation of porous anodic films on Ti-Si alloys in hot phosphate-glycerol electrolyte

Porous anodic films, with pore size of ∼10 nm, have been developed by anodizing of magnetron sputtered Ti-25 at.% Si alloy at constant formation voltages in glycerol electrolyte containing dibasic potassium phosphate at 433 K. The films, of amorphous structure, contain titanium and silicon species, as units of TiO₂ and SiO₂, throughout the film thicknesses, with negligible amounts of phosphorus species. The silicon is enriched in the film relative to the composition of the alloy, the level of enrichment suggesting that anion migration is increased in comparison with amorphous film growth at ambient temperature. In contrast to the behaviour of the alloy, essentially barrier films were formed on commercially pure titanium in the glycerol electrolyte, when a main anodic reaction was generation of oxygen, which was probably promoted by the development of anatase.     

Electrochemical transients during the initial moments of anodic oxidation of aluminum

Electrochemical current and potential transients were measured during anodic oxidation of aluminum, on time scales of 0.1-100 ms after anodizing began. Aluminum foil samples were prepared by surface treatments yielding oxide films of thickness 5 nm or smaller. A mathematical model was developed for the transients based on steady-state and transient conduction phenomena established for much thicker anodic films. Model calculations and experimental transients were in quantitative agreement, indicating that the electrochemical behavior of the nanometer-thick films during their growth is strongly similar to that of anodic films. No electrochemical processes other than uniform oxide growth were detected, as might have been associated with defects constituting easy conduction paths. The rate of oxide growth was shown to be controlled by oxygen ion transfer at the film-solution interface.     

Formation of porous anodic titanium oxide films in hot phosphate/glycerol electrolyte

The present study reveals the formation of porous anodic films on titanium at an increased growth rate in hot phosphate/glycerol electrolyte by reducing the water content. A porous titanium oxide film of 12 μm thickness, with a relatively low content of phosphorus species, is developed after anodizing at 5 V for 3.6 ks in 0.6 mol dm⁻³ K₂HPO₄ + 0.2 mol dm⁻³ K₃PO₄/glycerol electrolyte containing only 0.04% water at 433 K. The growth efficiency is reduced by increasing the formation voltage to 20 V, due to formation of crystalline oxide, which induces gas generation during anodizing. The film formed at 20 V consists of two layers, with an increased concentration of phosphorus species in the inner layer. The outer layer, comprising approximately 25% of the film thickness, is developed at low formation voltages, of less than 10 V, during the initial anodizing at a constant current density of 250 A m⁻². The pore diameter is not significantly dependent upon the formation voltage, being ∼10 nm.     

Study of anodic oxide films formed on solid-state sintered SiC-ceramic at high anodic potentials

The present work studies the formation, chemical composition, and structure of an oxide layer formed on the technical solid-state sintered ceramic (EKasic®D) in a strong alkaline solution (1 M NaOH at pH 14) at high anodic potentials (30 V vs. 3 M Ag/AgCl). The observed formation of oxide films on SiC in alkaline solution is in contradiction to the thermodynamic laws (Pourbaix-diagram). The film thickness was determined by SEM/EDX measurements using the specific thin film analysis tool “AZtec” (Oxford Instruments) as well as the transmission electron microscopy. The thickness of the oxide film formed at 30 V amounts to 30 nm that corresponds with a field strength of E = 10 MV cm^?1, which corresponds with the formation according to the high-field mechanism. The chemical composition was studied by EDX-analysis in a transmission electron microscope as well as by X-ray photoelectron spectroscopy (XPS). The oxide layer is completely amorphous and consists of non-stoichiometric SiO_x and SiO_xC_y. The layer is assumed as graded with a higher amount of SiO_x in the outermost regions and an increased amount of SiO_xC_y in the inner region of the passive layer. Additionally, the passive layer is doped by a small amount of aluminum originating from a sinter additive used in the manufacture of the SiC ceramic and completely incorporated into the SiC grains.     

Morphological and structural studies of nanoporous nickel oxide films fabricated by anodic electrochemical deposition techniques

Porous nickel oxide films are directly deposited onto conducting indium tin oxide coated glass substrates by cyclic voltammetric (CV), galvanostatic, and potentiostatic strategies in a plating bath of sodium acetate, nickel sulfate, and sodium sulfate. By tuning the deposition parameters, it is possible to prepare nickel oxide films with various morphologies and structures. Film formation relies on the oxidation of dissolved Ni²⁺ to Ni³⁺, which further reacts with the available hydroxide ions from a slightly alkaline electrolyte to form insoluble nickel oxide/hydroxide deposits on the substrate. A compact film with particularly small pores is obtained by CV deposition in a potential range of 0.7-1.1 V. A galvanostatically deposited film is structurally denser near the surface of the substrate, and becomes less dense further away from the surface. Interestingly, a potentiostatically deposited film has pores distributed uniformly throughout the entire film. Therefore, for obtaining a uniform film with suitable pore size for electrolyte penetration, potentiostatic deposition technique is suggested. In addition, except for CV deposition, the deposited films resemble closely to cubic NiO when the annealing temperature exceeds 200 °C.     

Influence of substrate microstructure on the growth of anodic oxide layers

The effects of permanent mold cast microstructure on the growth of anodic oxide layers on three different aluminum substrates (i.e. Al99.8, AlSi10, and AlSi10Cu3, wt.%) were investigated by optical microscopy (OM), scanning electron microscopy (SEM), and laser scanning confocal microscopy (LSCM). The anodic oxidation was performed galvanostatically in 2.25 M H₂SO₄, at 0 °C. The oxide layers developed a microscale topography mainly determined by the morphology of aluminum grains and cells. A low amount of insoluble impurities, uniformly distributed, would contribute to the growth of oxide layers with minimum defects and uniform thickness on the pure aluminum substrate whereas for the binary and ternary systems, a fine cell structure and a modified morphology of Si particles would be favorable. The Al-Fe and Al-Fe-Si particles were occluded in the oxide layers next to Si particles, blocking locally the oxide growth whereas Al₂Cu particles were preferentially oxidized. In addition, the presence of Si particles in the layer influenced pore morphology by development of deflected pores around the particles.     

Growth of anodic oxide films on oxygen-containing niobium

The present study is directed at understanding of the influence of oxygen in the metal on anodic film growth on niobium, using sputter-deposited niobium containing from about 0-52 at.% oxygen, with anodizing carried out at high efficiency in phosphoric acid electrolyte. The findings reveal amorphous anodic niobia films, with no significant effect of oxygen on the field strength, transport numbers, mobility of impurity species and capacitance. However, since niobium is partially oxidized due to presence of oxygen in the substrate, less charge is required to form the films, hence reducing the time to reach a particular film thickness and anodizing voltage. Further, the relative thickness of film material formed at the metal/film interface is increased by the incorporation of oxygen species into the films from the substrate, with an associated altered depth of incorporation of phosphorus species into the films.     

Mechanism of formation and growth of sunflower-shaped imperfections in anodic oxide films on niobium

Anodizing of niobium has been investigated to develop niobium solid electrolytic capacitors. Chemically polished niobium specimens were anodized in a diluted phosphoric acid solution, initially galvanostatically at i_a = 4 A m⁻² up to E_a = 100 V, and then potentiostatically at E_a = 100 V for t_pa = 43.2 ks. During the galvanostatic anodizing, the anode potential increased almost linearly with time, while, during potentiostatic anodizing, the anodic current decreased up to t_pa = 3.6 ks, and then increased slowly before decreasing again after t_pa = 30.0 ks. Images of FE-SEM and in situ AFM showed that nuclei of imperfections were formed at the ridge of cell structures before t_pa = 3.6 ks. After formation, the imperfection nuclei grew, showing cracking and rolling-up of the anodic oxide film, and crystalline oxide was formed at the center of imperfections after t_pa = 3.6 ks. The growth of imperfections caused increases in the anodic current between t_pa = 3.6 and 30.0 ks. Long-term anodizing caused a coalescence of the imperfections, leading to decreases in the anodic current after t_pa = 30.0 ks. As the imperfections grew, the dielectric dispersion of the anodic oxide films became serious, showing a bias voltage dependence of the parallel equivalent capacitance, C_p, and a dielectric dissipation factor, tan δ. The mechanism of formation and growth of the imperfections, and the correlation between the structure and dielectric properties of anodic oxide films is discussed.     

Stress-affected and stress-affecting instabilities during the growth of anodic oxide films

The objective of the current paper is to (re-)address the question whether internal stress is a fundamental parameter driving some generic cases of growth instabilities commonly encountered during the growth of anodic oxide films, namely breakdown and pore initiation. This has been done by unraveling possible correlations between a key electrochemical characteristic of the instability event and the internal stress evolution, the latter being measured in situ during the very same anodising experiment. As such, we have been able to make more conclusive statements as compared to the merely speculative arguments in the literature whether these instabilities have a mechanical origin or not. In the case of breakdown, the two well-documented types of breakdown events encountered during galvanostatic Zr anodising were both found to be stress-affected: instantaneous compressive internal stresses were identified as the driving force for both the densifying phase transformation responsible for type-I breakdown, as well as for the buckling-induced delamination events observed during type-II breakdown. Pore initiation in anodic Al₂O₃ on the other hand was found not be stress-affected. Instead, pore formation is rather believed to induce itself a modification in the mechanical behaviour, and was therefore classified as stress-affecting.     

Enhanced electrochromic performance of macroporous WO3 films formed by anodic oxidation of DC-sputtered tungsten layers

Self-organized macroporous tungsten trioxide (WO₃) films are obtained by anodic oxidation of DC-sputtered tungsten (W) layers on 10 mm × 25 mm indium tin oxide (ITO)-coated glass. Under optimized experimental conditions, uniformly macroporous WO₃ films with a thickness of ca. 350 nm are formed. The film shows a connected network with average pore size of 100 nm and a pore wall thickness of approximately 30 nm. The anodized film becomes transparent after annealing without significant change in macroporous structure. In 0.1 M H₂SO₄, the macroporous WO₃ films show enhanced electrochromic properties with a coloration efficiency of 58 cm² C⁻¹. Large modulation of transmittance (∼50% at 632.8 nm) and a switching speed of about 8 s are also achieved with this macroporous film.     

Micro-EIS of anodic thin oxide films on titanium for capacitor applications

The present work focuses on the investigation of the effect of the different crystallographic orientation of titanium grains on the formation of anodic oxide films and consequently their dielectric and semiconductive properties. By using a microcapillary cell the formation process and the electrochemical impedance spectroscopy (EIS) can be performed at high lateral resolution on variously orientated single grains of polycrystalline titanium. The oxide films were potentiodynamically formed by cyclovoltammetry. EIS measurements immediately followed by the oxide formation were used for a detailed investigation of the film properties, in particular, the relative permittivity ?_r and the donor concentration N_D. In contrast to the most publications it was found that under the chosen conditions the crystallographic orientation of titanium substrate has no significant influence on the oxide thickness d, the relative permittivity ?_r or on the donor concentration N_D of the oxide films. The relative permittivity ?_r is approximately 50. The donor concentration depends on the film thickness and amounts to approximately 3 × 10¹⁸ cm⁻³ in minimum.     

The galvanoluminescence spectra of barrier oxide films on aluminum formed in organic electrolytes

In this paper, for the first time we have presented the results of the galvanoluminescence (GL) spectra measurement obtained from barrier oxide films during aluminum anodization in various barrier film forming organic electrolytes (aqueous solution of citric acid, tartaric acid, malic acid, succinic acid and ammonium tartarate). Galvanoluminescence spectral measurements were performed utilizing spectrograph system based on the Intensified Charge Coupled Device (ICCD) camera, intended for time-resolved detection of GL phenomena dynamics. The spectra were recorded for different values of electrolyte temperature and anodization current density. We have showed that there are strong GL bands in the visible region and the shape of the spectra as well as peak intensity of the GL bands depend on the anodization voltage. The results cleraly indicate the existance of more then one type of GL centra or GL mechanisms in barrier films formed in organic electrolytes.     

Photo-electrochemical investigation of anodic oxide films on cast Ti-Mo alloys. I. Anodic behaviour and effect of alloy composition

The anodic behaviour of cast Ti-Mo alloys, having different Mo contents (6-20 wt.%), was investigated in acidic and neutral aerated aqueous solutions. All sample showed a valve-metal behaviour, owing to formation and thickening of barrier-type anodic oxides displaying interference colours. Growth kinetics of passive films is influenced by both anodizing electrolyte and composition of the starting alloy. This last parameter was found to change also the solid-state properties of the films, explored by photoelectrochemical and impedance spectroscopy experiments. Thicker films (U_f = 8 V/MSE) grown on alloys richer in Mo showed more resistive character and a photocurrent sign inversion under negative bias, that revealed an insulating character, whereas corresponding films grown on alloys with lower Mo content, as well as thinner films, behaved as n-type semiconductors. Results are discussed in terms of formation of a mixed Ti-Mo oxide phase.     

Effect of aluminum annealing on the galvanoluminescence properties of anodic oxide films formed in organic electrolytes

The galvanoluminescence (GL) properties of anodic oxide films formed in organic electrolytes were investigated at different aluminum annealing temperatures. The results of the spectral measurements showed two different types of GL sources: carboxylate ions incorporated in oxide films during the anodization and the molecules AlH, AlO, Al₂, AlH₂, also formed during anodization process and already recognized in the case of inorganic electrolytes. The latter was related to gamma alumina crystalline regions formed by annealing of the aluminum samples at temperatures above 500 °C.     

Influence of silicon on the growth of barrier-type anodic films on titanium

Amorphous anodic titania, stabilised by incorporation of silicon species, is shown to grow to high voltages on sputter-deposited, single-phase Ti-Si alloys during anodizing at a constant current density in ammonium pentaborate electrolyte. The films comprise two main layers, with silicon species confined to the inner layers. An amorphous-to-crystalline transition occurs at ∼60 V on the Ti-6 at.% Si alloy, while the transition is suppressed to voltages above 140 V on alloys with 12 and 26 at.% silicon. The crystalline oxide, nucleated at a depth of ∼40% of the film thickness, is associated with the presence of a precursor of crystalline oxide in the pre-existing air-formed oxide. The modified structure of the air-formed oxide due to increased incorporation of silicon species suppresses the amorphous-to-crystalline transition until the onset of dielectric breakdown. The transport numbers of cations and anions during growth of the anodic oxides are independent of the concentration of silicon species in the inner layer, despite the marked change in the field strength.     

A study on the formation of titania nanopillars during porous anodic alumina through-mask anodization of Ti substrates

The formation of anodic titania during porous anodic alumina (PAA) through-mask anodization has been analysed for varying anodization conditions on mechanically polished bulk Ti surfaces. Titania nanopillars were formed through the porous masks in both oxalic and phosphoric acid electrolytes. For applied potentials above 40 V the titania formed along narrow channels through the alumina pore bottoms resulting in root-like attachments of the titania pillars to the Ti substrate. We further demonstrated that high-field anodization can be used for PAA through-mask anodization. The formation of titania changed with increased current density which resulted in more efficient oxide growth through the alumina pores. When the Al/Ti samples were immersed in the electrolyte without exclusively exposing the Al surface to the electrolyte the titania formed solely on top of the alumina pore bottoms which resulted in that the titania structures were detached from the Ti substrates during selective removal of the PAA templates.     

On the contribution of electrostriction to charge-induced stresses in anodic oxide films

Electrostriction has been known for long as a major source of internal stress developing in oxide films during anodising. However, in many studies, the contribution of electrostriction is estimated using an oversimplified equation, leading to a systematic underestimation. In this work, a modified theory is first presented for linking the in-plane electrostriction stress to the applied electric field. The corrected equation explicitly takes into account the dielectric properties of the deformed material through the appropriate electrostriction parameters of the oxide film. A new experimental procedure is then described for measuring electrostriction stresses in situ during anodising, and applied to ultrathin (<100 nm) TiO₂ films. Oxide films were first grown potentiodynamically on one side of cantilevered electrodes. The electric field in the oxide film was then systematically changed by repeatedly cycling up to the forming voltage. At the same time, the resulting in-plane electrostriction stress was determined from high-resolution in situ curvature measurements. For the TiO₂ films considered, compressive in-plane electrostriction stresses up to −240 MPa were measured. This is an order of magnitude higher than previous predictions which neglected the contribution of the electrostriction parameters. Moreover, the measured stress values, their field-dependence and the derived electrostriction parameters are shown to be in agreement with the modified theory.     

Effects of a magnetic field on growth of porous alumina films on aluminum

The effects induced by a magnetic field on the oxide film growth on aluminum in sulfuric, oxalic, phosphoric and sulfamic acid, and on current transients during re-anodizing of porous alumina films in the barrier-type electrolyte, were studied. Aluminum films of 100 nm thickness were prepared by thermal evaporation on Si wafer substrates. We could show that the duration of the anodizing process increased by 33% during anodizing in sulfuric acid when a magnetic field was applied (0.7 T), compared to the process without a magnetic field. Interestingly, such a magnetic field effect was not found during anodizing in oxalic and sulfamic acid. The pore intervals were decreased by ca. 17% in oxalic acid. These findings were attributed to variations in electronic properties of the anodic oxide films formed in various electrolytes and interpreted on the basis of the influence of trapped electrons on the mobility of ions migrating during the film growth. The spin dependent tunneling of electrons into the surface layer of the oxide under the magnetic field could be responsible for the shifts of the current transients to lower potentials during re-anodizing of heat-treated oxalic and phosphoric acid alumina films.