磁控溅射钛膜的沉积过程及表面形貌研究

实验研究了在磁控溅射工艺的溅射功率和工作压强恒定的情况下,薄膜在基底表面的沉积及生长的过程.结果表明,在溅射参数恒定、Ti膜尚未连续的情况下,薄膜的覆盖率的对数与时间基本成正比关系,即薄膜的覆盖率随时间指数增加.在薄膜连续后,出现晶粒长大并合并的现象.薄膜的生长方式为先层状生长再岛状生长.     

衬底及压强对磁控溅射ZnO薄膜表面形貌的影响

在压强为0.5Pa和0.7Pa的情况下,采用磁控溅射法分别在Si及石英玻璃衬底上生长ZnO薄膜。利用原子力显微镜对ZnO薄膜的表面形貌进行观察,研究了压强及衬底对薄膜表面形貌的影响。研究表明:在Si衬底上生长的ZnO薄膜,压强为0.7Pa时比压强为0.5Pa时表面粗糙度要大;在相同溅射气压(0.7Pa)下,Si衬底上得到的ZnO薄膜质量明显优于石英玻璃衬底上的。     

退火温度对硅基硬质碳膜内应力和硬度的影响

硬质碳膜中应力的存在限制了其应用,真空退火是降低内应力的有效措施.本文利用BGS6341型电子薄膜应力分布测试仪和HXD-1000型数字式硬度计,对在硅基片上用非平衡磁控溅射制备的碳膜应力和硬度随退火温度的变化进行了研究.研究结果表明:随退火温度的升高,碳膜平均应力减小,分布趋向均匀,但硬度下降;在退火温度300℃下平均应力减小为-2.29×108Pa,膜的硬度变化不明显,维氏硬度从4780.3589 MPa降到4194.099 MPa(类似于类金刚石(DLC)),此退火温度下保证了薄膜具有很小的内应力同时具有较高的硬度.     

离子轰击辅助电子束蒸发制备含有纳米石墨结构的非晶碳膜

采用离子轰击辅助电子束蒸发技术制备了含有纳米石墨结构的碳膜。利用XRD、Ralnan和AFM等方法分析了碳膜的厚度、结构、相成分和形貌。结果表明制备的碳膜是一种具有纳米石墨结构的非晶碳膜。随着离子轰击能量的增大,碳膜的厚度随之减小,纳米石墨结构sp2团簇的尺寸变大,碳膜表面粗糙度增大,并找到了最佳的离子轰击能量。通过对Raman光谱分析发现,在最佳离子轰击能量下形成的纳米石墨结构sp2团簇尺寸大小约为2nm。     

基体表面状态对直流磁控溅射铬膜附着性的影响

在锆合金基体上制备直流磁控溅射铬膜，研究了基体宏观粗糙度、膜层沉积前的离子轰击对膜感附着性的影响，以探讨利用铬膜改善锆合金耐蚀性的可能性。实验中，使用扫描电镜(SEM)观察了界面形貌及Zr、Cr的界面分布，用划痕法测定了铬膜的附着性，结果表明：锆／铬界面结合良好，边界清晰，成分升降区依界面形貌不同而有差异；实验获得的铬膜附着性均超过20N；在本文条件下，机械锁紧力对附着性有重要影响；基体宏观粗糙度的增加对附着性无明显影响，但表面轻微粗化有利于膜的附着性；溅射前的基体离子轰击有利于提高铬膜与基体的附着力，但轰击时间过长并无意义。     

工艺条件对中频磁控溅射CIGS薄膜的影响

采用铜铟镓硒(CIGS)四元合金靶材,利用中频溅射电源在钠钙玻璃基底上磁控溅射CIGS薄膜。研究了溅射功率及基底温度对CIGS薄膜结构及性能的影响。采用SEM、XRD、UV-Vis及四探针方阻测试仪对CIGS薄膜结构及性能进行了表征。结果表明,随着功率的升高,薄膜晶界明显,晶粒增大,光吸收系数达到105 cm-1数量级;随着基底温度升高到250℃,制备的CIGS吸收层薄膜结晶性最好,晶粒尺寸达到1μm,电阻率3 200Ω·cm,光吸收系数达到0.98×105 cm-1,禁带宽度为1.41eV。     

掺氮氟非晶碳膜场发射电流重复性及F-N曲线研究

采用射频等离子体化学增强型气相沉积(rF-PECVD)法沉积了掺氮氟化非晶碳膜.研究了不同射频功率下薄膜样品表面形貌及I-U特性,比较了试样I-U曲线的对称性及零点漂移;分析了直接沉积及硅陈列沉积下膜场发射电流的重复稳定性的差异;研究了不同掺氮流量比下沉积薄膜的Fower-Nord-heim曲线.研究结果表明,氮氟化非晶碳膜是良好的冷阴极发射材料.射频功率的提升,有利于薄膜质量和性能改善;硅陈列沉积FN-DLC膜场测试的场发射电流的重复性能较直接沉积的更加稳定优良;F-N曲线基本为直线,掺氮氟化非晶碳膜的场发射为冷阴极发射,逸出功随着含氮量的升高而增大.     

塑性接触对表面形貌的影响

针对工程中许多接触表面(如机床静结合面)的接触特性(如接触面刚度等)都决定于塑性接触后的表面形貌的情况,本文研究了塑性接触对表面形貌的影响,提出了相应的计算模型,并考虑了法向载荷与切向载荷的影响。该模型不仅为研究静结合面(这种结合面塑性接触后的表面形貌是无法测定的)接触特性提供了有效方法,而且对于合理选择精整加工的最佳工艺参数具有指导意义。     

氧气氛退火对磁控溅射Ta2O5薄膜结构、表面形貌及电学性能的影响

本文采用磁控溅射在Si基体上制备Ta2O5薄膜,研究了退火前、500℃氧气氛退火半小时之后、800℃氧气氛退火半小时之后的Ta2O5薄膜的结构、表面形貌及电学性能.退火前和500℃退火的薄膜均为非晶薄膜,但500℃退火之后能使非晶薄膜结构更加致密,表面更加平整,并且给薄膜进行了补氧,提高了薄膜的绝缘性能.800℃退火之后的薄膜出现了结晶颗粒,晶界引起了大的漏电流,使薄膜的绝缘性能下降.     

沉积参数对ITO表面形貌及晶体结构的影响

利用离子辅助电子束蒸发技术在不同沉积工艺参数下制备了ITO薄膜,详细讨论了沉积工艺参数的变化对ITO薄膜表面形貌及晶体结构的影响。结果表明:随基板温度的升高,ITO薄膜的缺陷增多,表面粗糙度增大。高温下沉积的薄膜为多晶结构,并呈现[111]择优取向;随着沉积速率的升高,薄膜表面粗糙度变大,结晶度升高,晶粒尺寸增大,呈现出沿[001]取向择优生长的趋势,并且低速率下沉积的薄膜中包含除立方氧化铟外的其他晶相。     

射频磁控溅射制备类金刚石薄膜

采用射频磁控溅射法在Si和Ti合金基体上沉积出类金刚石(DLC)薄膜.利用拉曼光谱仪、划痕仪和扫描电子显微镜分析了DLC薄膜的结构、膜基附着力和表面形貌.结果表明:射频磁控溅射法能够制备出表面平整、结构致密的DLC薄膜;同时基体材料的不同不会影响DLC薄膜的键合结构,Si基体上涂层附着力为30N,Ti基体上膜基结合力大于40 N.     

非平衡磁控溅射TiCxN1-x薄膜微结构及性能分析

为了研究不同沉积条件下TiCxN1-x(0≤x≤1)薄膜的相结构、显微硬度及摩擦性能的影响因素,用扫描电子显微镜(SEM)、X射线衍射仪分析薄膜的形貌和相结构,用HXD-1000数字式显微硬度计、MCMS-1摩擦磨损仪测试薄膜的硬度和摩擦系数.研究结果表明:TiN,TiC薄膜显示出〈111〉择优取向生长趋势,Ti(C,N)有较强的〈200〉取向,Ti(C,N)衍射峰涵盖了TiN峰和TiC峰,薄膜存在TiN和TiC两相共存.与TiN,TiC相比,Ti(C,N)薄膜具有更高硬度,当C原子含量x＝0.582时,Ti(C,N)薄膜硬度达到最大值为33.6 GPa,且表现出更低的摩擦系数和更好的耐磨性能.     

偏压对磁控溅射Cr-N薄膜组织及性能影响

采用磁控溅射离子镀制备Cr-N薄膜,研究基体偏压对Cr-N薄膜组织结构和性能的影响。分别用辉光放电光电子谱(GDOES)、场发射扫描电镜(FESEM)和X射线衍射(XRD)分析薄膜成分和组织结构,显微硬度计测量薄膜硬度。结果表明,薄膜为非化学计量比的Cr-N薄膜,N/Cr原子比均小于0.25,薄膜主要以Cr的衍射峰为主。在偏压达到60 V后薄膜显示了较高的硬度(25 GPa),其归因于离子轰击导致的薄膜的致密度的提高。偏压超过60 V后,致密度达到饱和,硬度增加不明显。     

Microstructure and Oxidation Resistance of V Thin Films Deposited by Magnetron Sputtering at Room Temperature

Vanadium films were deposited on Si(100) substrates at room temperature by direct current (DC) magnetron sputtering.The microstructure and surface morphology were studied using scanning electron microscopy (SEM) and atomic force microscope (AFM).The oxidation resistance of films in air was studied using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM).The results showed that the amorphous vanadium film with a flatter surface had higher oxidation resistance than the crystalline film when exposed to atmosphere.The rapid formation of the thin oxide layer of amorphous vanadium film could protect the film from sustained oxidation,and the relative reasons were discussed.     

Effects of Annealing Temperature on the Properties of Copper Films Prepared by Magnetron Sputtering

Copper oxide thin films were prepared by a direct-current magnetron sputtering method followed by a thermal annealing treatment at 100-500 °C. The obtained films were characterized by X-ray diffraction, UV–vis absorption spectroscopy, scanning electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. With the increase of the annealing temperature, it was found that the films transformed sequentially from amorphous to single-phase Cu(100 ℃), mixed-phase of Cu and Cu2O(150 ℃), single-phase Cu2O(200 ℃), then to mixed-phase of Cu2 O and Cu O(300 ℃), and finally to single-phase Cu O(400- 500 ℃). Further analyses indicated that the Cu/Cu2 O thin films and the Cu2 O thin films presented no further oxidation even on the surface in air atmosphere. Additionally, the visible-light photocatalytic behavior of the copper oxide thin films on the degradation of methylene blue(MB) was also investigated, indicating that the films with pure Cu2 O phase or Cu/Cu2 O mixed phases have excellent photocatalytic efficiencies.     

磁控溅射法镀制氮化铝薄膜特性研究

氮化铝薄膜具有高折射率,良好的化学稳定性,耐磨摩、高电阻等特性在微电子器件和光学薄膜中有着广泛地应用.本文研究了反应式磁控溅射方法利用Ar/N2混合气体镀制氮化铝薄膜的工艺过程,实验表明在高真空和高泵浦速率条件下,放电电压直接依赖于反应气体珠浓度.薄膜的折射率,消光系数和薄膜硬度都依赖于氮气浓度的比例.通过工艺研究,找到了氮气在不同浓度下对氮化铝薄膜的折射率,消光系数以及薄膜硬度的影响,找出了镀制氮化镀制氮化铝薄膜的最佳工艺参数.在Ar/N2工作气体中氮气含量保持在40%条件下,用反应式磁控溅射方法,可以精确镀制出良好的氮化铝薄膜,其中折射率范围在2.25~2.4之间,消光系数为10-3,薄膜显微硬度大于20GPa.该薄膜可以广泛应用于微电子器件和光电器件上.     

Effects of Electrode on Resistance Switching Properties of ZnMn_2O_4 Films Deposited by Magnetron Sputtering

ZnMn_2O_4 films for resistance random access memory(RRAM) were fabricated with different device structures by magnetron sputtering. The effects of electrode on I-V characteristics, resistance switching behavior, endurance and retention characteristics of ZnMn_2O_4 films were investigated. The ZnMn_2O_4 films, using p-Si and Pt as bottom electrode, exhibit bipolar resistive switching(BRS) behavior dominated by the space-charge-limited conduction(SCLC) mechanism in the high resistance state(HRS) and the filament conduction mechanism in the low resistance state(LRS), but the ZnMn_2O_4 films using n-Si as bottom electrodes exhibit both bipolar and unipolar resistive switching behaviors controlled by the Poole-Frenkel(P-F) conduction mechanism in both HRS and LRS. Ag/ZnMn_2O_4/p-Si device possesses the best endurance and retention characteristics, in which the number of stable repetition switching cycle is over 1000 and the retention time is longer than 106 seconds. However, the highest RHRS/R_(LRS) ratio of 104 and the lowest V_(ON) and V_(OFF) of 3.0 V have been observed in Ag/ZnMn_2O_4/Pt device. Though the Ag/ZnMn_2O_4/n-Si device also possesses the highest RHRS/R_(LRS) ratio of 104, but the highest values of V_(ON),V_(OFF), RHRS and R_(LRS), as well as the poor endurance and retention characteristics.     

Microstructure and Mechanical Property of Magnetron Sputtering Deposited DLC Film

A diamond-like carbon (DLC) film was deposited on YT14 substrate using magnetron sputtering (MS). The surface morphologies, roughness and bonding spectra of obtained film were characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS), respectively, and its mechanical property and bonding strength were measured using a nanoindentation and scratch tester, respectively. The results show that the C-enriched DLC film exhibits a denser microstructure and smoother surface with lower surface roughness of 21.8 nm. The ratio of C sp2 at 284.4 eV that corresponds to the diamond (111) and the C sp3 at 285.3 eV that corresponds to the diamond (220) plane for the as-received film is 0.36: 0.64, showing that the C sp3 has the high content. The hardness and Young’s modulus of DLC film by nanoindentation are 8.534 41 and 142.158 1 GPa, respectively, and the corresponding bonding strength is 74.55N by scratch test.     

Structure and Properties of TiB2 Thin Films Deposited at Low Temperatures Using RF Magnetron Sputtering

The TiB2 thin films were deposited on steel substrates using RF magnetron sputtering technique with the low normalized substrate temperature (0.1相似文献   

AZ31镁合金表面磁控溅射TiO2薄膜的表面特性的研究

利用射频磁控溅射工艺在AZ31镁合金表面溅射了TiO₂薄膜,并对薄膜的特性进行了研究。扫描电镜观察显示制备态的TiO₂薄膜结构致密,表面无缺陷。对薄膜经过200℃保温30分钟、常温冷却或者85℃保持一小时后放到常温保持15分钟,连续实施4次该操作的两种热处理工艺后,观察到薄膜表面致密结构没有发生变化,表面也没有缺陷生成。这表明了薄膜具有热稳定性。薄膜表面硬度特性研究表明薄膜表面的显微硬度为1.51 GPa。最后,研究了表面镀有TiO₂薄膜的AZ31镁合金在模拟人体体液环境下的腐蚀（降解）特性。结果表明,在7天腐蚀过程中,AZ31镁合金基底没有被腐蚀,因此TiO₂薄膜对AZ31镁合金基底具有很好的保护作用。