1.8V音频∑△调制器的设计

介绍了一种适用于语音信号处理的16位24 kHz ∑△调制器.该电路采用单环三阶单比特量化形式,利用Matlab优化调制器系数.电路采用SIMC 0.18μm CMOS工艺实现,通过Cadence/Spectre仿真器进行仿真.仿真结果显示,调制器在128倍过采样率时,带内信噪比达到107 dB,满足设计要求.     

超高频RFID标签的数字电路设计

在研究读写器和射频标签通信过程的基础上,结合EPC C1G2协议以及ISO/IEC18000-6协议,采用VHDL语言设计出一种应用于超高频段的射频标签数字电路.对电路的系统结构和模块具体实现方法进行了描述.基于0.18 μm CMOS工艺标准单元库,采用EDA工具对电路进行了前端综合和后端物理实现.给出的仿真结果表明该电路符合协议要求,综合后的电路规模约为11000门,功耗约为35 μW.该电路可应用于超高频段的各种RFID标签的数字部分.     

一种自偏置高效率CMOS超高频整流电路的设计

基于SMIC 0.18μm 1P6M标准CMOS工艺,设计并实现了一种低成本、高效率的超高频整流电路.该设计采用直流偏置电路和驱动电路对整流管的阈值电压进行补偿,消除了标准CMOS工艺阈值电压对整流电路效率的不利影响.在版图后仿真下,当输入915MHz,340mV的射频信号时,整流电路的输出电压为2.646V,启动时间为60μs,总体效率高达43.8%,整个电路版图面积为910μm×600μm.     

CMOS掉电检测及保护电路设计

本文设计了一款电源电压检测保护电路,该电路由电阻分压电路、带隙基准电路、高精度比较器和输出缓冲电路组成。详细说明了各部分的电路及版图设计,并给出Spectre仿真结果。该电路采用SMIC 0.18μm混合信号工艺实现。电路结构简单,易于实现,可集成在单片机内部,提高单片机的可靠性。     

一种多电源信号处理系统的保护电路设计

提出了一种采用0.18 μm BiCMOS工艺的多电源信号处理系统的保护电路.保护电路检测各个电源,以确定不同电源的状态,然后给出准确的握手信号,以保障系统正常工作.该电路采用BiCMOS工艺,设计为IP核固化,面积小,可以方便地应用于多电源信号处理系统.设计的保护电路已用于数模混合信号芯片中,在0.18 μm BiCMOS工艺上进行流片.对芯片样品电路进行测试,结果表明,保护电路IP核工作正常,能够对整个系统进行上电/掉电保护.     

一种新型低压数字接口电路

提出了一种新型低压数字接口电路,可实现电压转换功能。在输入信号保持为高低电平时,该新型数字接口电路整体处于截止状态,静态电流为零。该电路实现了低功耗,能抑制信号抖动,实用性较强。该电路可集成于各类芯片内部,避免使用额外的外部元件和引脚。利用Hspice软件进行仿真测试,采用0.18 μm BCD工艺进行流片验证。结果表明,该新型数字接口电路能有效实现电压转换。     

1．8V音频∑-Δ调制器设计与实现

介绍了一种适用于数字音频应用的16位8 kHz Σ-Δ调制器,该电路采用单环三阶、单比特量化形式;为适应较低电压,采用带密勒补偿的两级运放.仿真结果显示,调制器在128倍过采样率时,带内信号信噪比可达到102.6.该电路采用UMC 0.18 μm混合信号工艺实现,工作电压为1.8 V,芯片版图面积为1.3 mm×1.3 mm.     

1.8 V音频Σ-Δ调制器设计与实现

介绍了一种适用于数字音频应用的16位8 kHz Σ-Δ调制器,该电路采用单环三阶、单比特量化形式;为适应较低电压,采用带密勒补偿的两级运放.仿真结果显示,调制器在128倍过采样率时,带内信号信噪比可达到102.6.该电路采用UMC 0.18 μm混合信号工艺实现,工作电压为1.8 V,芯片版图面积为1.3 mm×1.3 mm.     

一种高灵敏度数字化TDI型红外焦平面读出电路

数字化红外焦平面探测技术作为第三代红外焦平面技术成为近年来被研究的热点.本文提出了一种将像素级数字化技术与TDI技术相结合的红外焦平面读出电路,使得电路实现大动态范围的同时满足低功耗设计.文中在0.18μm CMOS工艺模型下,对电路进行设计仿真,该读出电路电荷处理能力可达到5.04 Ge-,动态范围最高达到101.5...     

一种低功耗多谐振荡式电压频率转换器设计

提出一种新型的低功耗多谐振荡式电压频率转换器电路的设计,采用0.18μm CMOS工艺制程,拥有较大的输入电压范围,根据CSMC 0.18μm工艺参数,在Spectre上仿真。结果表明,该电路在0~1.6 V的输入电压下输出0~2.0 MHz的频率信号,灵敏度1.25 MHz/V,输出频率相对误差小于6.8%,电路的最大功耗0.23 m W。得到预期的设计结果。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.