SJ/T 11365-2006《电子信息产品中有毒有害物质的检测方法》

本标准参考了IEC 111/54/CDV《电子电器产品中六种限用物质铅、汞、镉、六价铬、多溴联苯和多溴二苯醚的检测方法》,附录A为规范性附录.……     

SJ/T 11365-2006《电子信息产品中有毒有害物质的检测方法》

发布日期:2006-11-06实施日期:2006-11-06标准提出单位:信息产业部电子信息产品污染防治标准工作组归口单位:中国电子技术标准化研究所本标准参考了IEC111/54/CDV《电子电器产品中六种限用物质铅、汞、镉、六价铬、多溴联苯和多溴二苯醚的检测方法》,附录A为规范性附录。范围本标准规定了电子信息产品中含有的铅(Pb)、汞(Hg)、镉(Cd)、六价铬[Cr(Ⅵ)]、多溴联苯(PBB)和多溴二苯醚(P B D E)六种限用的有毒有害物质或元素的检测方法,适用于《管理办法》定义的电子信息产品。术语和定义筛选:初步量化被检物中待测元素浓度的一种分析方…     

SJ/T 11365-2006《电子信息产品中有毒有害物质的检测方法》

本标准参考TIEC 111／54／CDV《电子电器产品中六种限用物质铅、汞、镉、六价铬、多溴联苯和多溴二苯醚的检测方法》，附录A为规范性附录。     

基于介电泳技术制备SiC纳米线薄膜晶体管

本文从理论和实验两方面,研究了介电泳技术中SiC纳米线溶剂的选择。从介电泳力、介电泳力矩、溶剂的挥发性和毒性角度分析,发现异丙醇是合适的SiC纳米线溶剂。以异丙醇作为溶剂,利用介电泳技术实现了SiC纳米线的定向排列,并得到纳米线薄膜。SiC纳米线溶液浓度分别为0.1μg/μL,0.3μg/μL, 0.5μg/μL时,得到定向排列纳米线的密度分别为 2/μm,4/μm,6/μm。并且利用密度为6/μm的SiC纳米线薄膜制备了晶体管,该晶体管的迁移率为13.4 cm2/V?s。     

RoHS指令中六种有害物质检测方法的研究

欧盟WE EE/RoHS指令案的生效将对我国电子工业产生巨大影响,如何对电子产品中所限制的有害物质进行精准测量则显得意义重大.本文介绍了RoHS指令中铅、镉、汞、六价铬、多溴联苯及多溴二苯醚等六种有毒有害物质的检测方法,并对目前国内外相关的检验法·规、标准进行了概述.     

基于正交设计的三联吡啶钌-电化学发光法测定罗库溴铵

目的:建立一种检测罗库溴铵的电化学发光(ECL)方法.方法:利用正交设计实验对检测体系中三联吡啶钌(Ru(bpy)32+)浓度和磷酸缓冲盐(PBS)浓度及pH值实行搭配实验,并对实验结果进行多元二次回归分析,得到最佳检测条件.结果:Ru(bpy)32+浓度、PBS浓度及pH值的最佳实验条件分别为1.0 mmol/L、102.5 mmol/L和8.0.本方法检测线性范围为0.1至100μg/mL,检测限为0.06 μg/mL.结论:该方法快速、简单.可用于罗库溴铵注射液的测定.     

质量资讯

电子电气有害物质检测四项国家标准通过审定近日,经国家标准化管理委员会高新技术部授权,“有害物质检测方法工作组”秘书处在深圳组织召开电子电气产品中有害物质检测四项国家标准的标准审定会。《电子电气产品中限用物质多溴联苯、多溴二苯醚检测方法》等4项国家标准通过审定。这4项标准分别是:《电子电气产品中限用物质多溴联苯、多溴二苯醚检测方法》、《电子电气产品中限用物质六价铬(C r)检测方法》、《电子电气产品中限用物质铅(Pb)、汞(Hg)、镉(Cd)检测方法》和《电子电气产品中限用物质铅、汞、镉、铬和溴的快速筛选-X射线荧光光…     

“溴”有望率先通过REACH

迄今为止溴阻燃剂有75种，只发现五溴二苯醚和八溴二苯醚对环境和健康，存在一些潜在的危险性，但溴却因此被禁用。     

电子电气产品的有害物质检测方法

从取样、前处理及仪器分析方面对电子电气产品中有害物质的检测做了简要的分析．并列举了国际上对铅、镉、汞、六价铬、多溴联苯、多溴二苯醚的参考检测方法。     

液相色谱-串联质谱法测定凡纳滨对虾中的黄曲霉毒素B1

采用液相色谱-串联质谱法,测定了凡纳滨对虾(Litopenaeus vannamei)中黄曲霉毒素B1。采用选择离子扫描方式(SRM),ESI正离子模式检测,黄曲霉毒素B1的分子离子峰为(m/z)313.00,定量离子为(m/z)285.1,定性离子为(m/z)269.1、241.1。样品经过乙酸乙酯提取,正己烷净化,以乙腈0.5mmol/L乙酸铵水溶液(含0.1%甲酸)为流动相进行梯度洗脱。结果表明,黄曲霉毒素B1在0-5ng/m L范围内线性关系良好(R0.999),检出限为0.1μg/kg,在0.5μg/kg、1.0μg/kg、2.0μg/kg三个水平上进行加标回收试验,平均回收率为95.8%—103.2%,精密度RSD≤3%。采用该方法满足凡纳滨对虾中黄曲霉毒素B1的低含量检测。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.